1. A trailer of the type being connectable to a towing vehicle so as to tow a small vehicle, comprising:
wheels;
a structure supported by the wheels, the structure having:
a connector portion, adapted to be connected to the towing vehicle;
a support frame having a support configuration with a loadingunloading end to support the small vehicle;
a pivoting mechanism connecting the support frame to the connector portion in such a way that the support frame is pivotable about a first axis between a towing position in which the support frame supports the small vehicle for towing and a loadingunloading position in which the support frame is inclined with the loadingunloading end being adjacent to the ground;
at least one plate spring positioned between the support frame and the connector portion to bias the support frame to the loadingunloading position, the at least one plate spring is pivotally connected at a first end to the connector portion, and pivotally connected at a second end to the support frame about a second axis offset and adjacent to said first axis of the pivoting mechanism; and
a locking mechanism to lock the support frame to the connector portion in the towing position of the support frame.
2. The trailer according to claim 1, comprising two of the plate springs, the pivot axes at both ends of the two plate springs being collinear.
3. The trailer according to claim 1, wherein said first axis of the pivoting mechanism is positioned forward of an axle axis of the wheels.
4. The trailer according to claim 1, wherein the support configuration of the support frame has a frame having a pair of parallel longitudinal members separated by V-shaped transverse members so as to support a watercraft.
5. The trailer according to claim 4, wherein the support frame receives a support on the transverse members for two-wheel small vehicles.
6. The trailer according to claim 4, wherein the support frame receives supports on the longitudinal members for four-wheel small vehicles.
7. The trailer according to claim 1, wherein the support configuration has a stand device, the stand device having a pair of plates spaced apart to receive a wheel of the small vehicle therebetween, a strap being positioned between the pair of plates and in alignment with the plates so as to automatically abut the wheel entering the stand device such that a pressure against the strap brings the plates laterally against the wheel.
8. The trailer according to claim 4, wherein the longitudinal members include at least one longitudinal pipe, the longitudinal pipe being sealable to form a floating member.
9. The trailer according to claim 8, wherein the longitudinal pipe has an opening at a bottom rear end to allow air to enter the longitudinal pipe, and an opening at a front upper end provided with a valve of the longitudinal pipe to retainrelease air from the longitudinal pipe.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a substrate;
a first silicon nitride oxide film including nitrogen at a first concentration formed over the substrate;
a second silicon nitride oxide film including nitrogen at a second concentration formed over the first silicon nitride oxide film;
a semiconductor island comprising crystalline silicon formed over the second silicon nitride oxide film; and
a third silicon nitride oxide film including nitrogen at a third concentration formed over the semiconductor island,
wherein the first concentration is higher than each of the second concentration and the third concentration.
2. A semiconductor device according to claim 1, wherein the first concentration is higher than a concentration of oxygen in the first silicon nitride oxide film.
3. A semiconductor device according to claim 1, wherein the second concentration is lower than a concentration of oxygen in the second silicon nitride oxide film.
4. A semiconductor device according to claim 1, wherein the first concentration is not less than 25 atomic % and less than 50 atomic %, and wherein the third concentration is not less than 5 atomic % and less than 25 atomic %.
5. A semiconductor device according to claim 1, wherein the semiconductor island has a tensile stress,
wherein the first silicon nitride oxide film has a tensile stress, and
wherein third silicon nitride oxide film has a compressive stress.
6. A semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
7. An electronic equipment having the semiconductor device according to claim 1, wherein the electronic equipment is selected from the group consisting of a portable telephone, a video camera, a portable information terminal, a head mount display, a projector, an electronic portable book, a personal computer, a DVD player, and a digital camera.
8. A semiconductor device comprising:
a substrate;
a first silicon nitride oxide film including nitrogen at a first concentration formed over the substrate;
a second silicon nitride oxide film including nitrogen at a second concentration formed over the first silicon nitride oxide film;
a semiconductor island comprising crystalline silicon formed over the second silicon nitride oxide film;
a third silicon nitride oxide film including nitrogen at a third concentration formed over the semiconductor island; and
an electrode being formed over the semiconductor island,
wherein the first concentration is higher than each of the second and third concentrations,
wherein the semiconductor island includes a source region, a drain region, a channel region and a pair of LDD regions.
9. A semiconductor device according to claim 8, wherein the first concentration is not less than 25 atomic % and less than 50 atomic %, and wherein the third concentration is not less than 5 atomic % and less than 25 atomic %.
10. A semiconductor device according to claim 8, wherein the semiconductor island has a tensile stress,
wherein the first silicon nitride oxide film has a tensile stress, and
wherein third silicon nitride oxide film has a compressive stress.
11. A semiconductor device according to claim 8, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
12. An electronic equipment having the semiconductor device according to claim 8, wherein the electronic equipment is selected from the group consisting of a portable telephone, a video camera, a portable information terminal, a head mount display, a projector, an electronic portable book, a personal computer, a DVD player, and a digital camera.
13. A semiconductor device comprising:
a substrate;
a first silicon nitride oxide film including nitrogen at a first concentration formed over the substrate;
a second silicon nitride oxide film including nitrogen at a second concentration formed over the first silicon nitride oxide film;
a semiconductor island comprising crystalline silicon formed over the second silicon nitride oxide film;
a third silicon nitride oxide film including nitrogen at a third concentration formed over the semiconductor island; and
a gate electrode formed over the semiconductor island,
wherein the first concentration is higher than each of the second concentration and the third concentration.
14. A semiconductor device according to claim 13, wherein the semiconductor island includes a source region, a drain region, a channel region and a pair of LDD regions,
wherein each of the LDD regions includes a first portion which is overlapped with the gate electrode with the third silicon nitride oxide film therebetween and a second portion which is not overlapped with the gate electrode.
15. A semiconductor device according to claim 13, wherein the first concentration is not less than 25 atomic % and less than 50 atomic %, and wherein the third concentration is not less than 5 atomic % and less than 25 atomic %.
16. A semiconductor device according to claim 13, wherein the gate electrode comprising at least one element selected from the group consisting of Ta, Ti, Mo, and W.
17. A semiconductor device according to claim 13, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
18. An electronic equipment having the semiconductor device according to claim 13, wherein the electronic equipment is selected from the group consisting of a portable telephone, a video camera, a portable information terminal, a head mount display, a projector, an electronic portable book, a personal computer, a DVD player, and a digital camera.
19. A semiconductor device comprising:
a substrate;
a first silicon nitride oxide film including nitrogen at a first concentration formed over the substrate;
a second silicon nitride oxide film including nitrogen at a second concentration formed over the first silicon nitride oxide film;
a semiconductor island comprising crystalline silicon formed over the second silicon nitride oxide film;
a third silicon nitride oxide film including nitrogen at a third concentration formed over the semiconductor island; and
an electrode for applying a voltage to the semiconductor island through the first silicon nitride oxide film and the second silicon nitride oxide film,
wherein the first concentration is higher than each of the second concentration and the third concentration.
20. A semiconductor device according to claim 19, wherein the first concentration is not less than 25 atomic % and less than 50 atomic %, and wherein the third concentration is not less than 5 atomic % and less than 25 atomic %.
21. A semiconductor device according to claim 19, wherein the electrode comprising at least one element selected from the group consisting of Ta, Ti, Mo, and W.
22. A semiconductor device according to claim 19, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
23. An electronic equipment having the semiconductor device according to claim 19, wherein the electronic equipment is selected from the group consisting of a portable telephone, a video camera, a portable information terminal, a head mount display, a projector, an electronic portable book, a personal computer, a DVD player, and a digital camera.
24. A semiconductor device comprising:
a substrate;
a first silicon nitride oxide film including nitrogen at a first concentration formed over the substrate;
a second silicon nitride oxide film including nitrogen at a second concentration formed over the first silicon nitride oxide film;
a semiconductor island comprising crystalline silicon formed over the second silicon nitride oxide film;
a third silicon nitride oxide film including nitrogen at a third concentration formed over the semiconductor island; and
an electrode for applying a voltage to the semiconductor island through the third silicon nitride oxide;
wherein the electrode formed over the semiconductor island,
wherein the first concentration is higher than each of the second and third concentrations.
25. A semiconductor device according to claim 24, wherein the first concentration is not less than 25 atomic % and less than 50 atomic %, and wherein the third concentration is not less than 5 atomic % and less than 25 atomic %.
26. A semiconductor device according to claim 24, wherein the electrode comprising at least one element selected from the group consisting of Ta, Ti, Mo, and W.
27. A semiconductor device according to claim 24, wherein the semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL display device, and an image sensor.
28. An electronic equipment having the semiconductor device according to claim 24, wherein the electronic equipment is selected from the group consisting of a portable telephone, a video camera, a portable information terminal, a head mount display, a projector, an electronic portable book, a personal computer, a DVD player, and a digital camera.