1. A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber, the method comprising:
forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas;
adsorbing a gas containing a material for nucleation onto a surface of the initial tungsten film;
depositing a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film by supplying the WF6 gas and the H2 gas into the processing chamber; and
after stopping the supply of the WF6 gas and increasing a pressure in the processing chamber after completion of deposition of the crystallinity blocking tungsten film, depositing a main tungsten film by supplying the WF6 gas and the H2 gas at a pressure higher than that during deposition of the crystallinity blocking tungsten film while setting a flow rate of the WF6 gas to be higher than that during deposition of the crystallinity blocking tungsten film.
2. The tungsten film forming method of claim 1, wherein a time until deposition of the main tungsten film after completion of deposition of the crystallinity blocking tungsten film is set to 20 to 270 seconds.
3. The tungsten film forming method of claim 1, wherein the crystallinity blocking tungsten film has a thickness of 0.5 to 11.5 nm.
4. The tungsten film forming method of claim 1, wherein deposition of the crystallinity blocking tungsten film is performed while the pressure in the processing chamber is set to 100 to 26667 Pa, the flow rate of the WF6 gas is set to 5 to 200 sccm (mLmin), and a flow rate of the H2 gas is set to 100 to 12000 sccm (mLmin).
5. The tungsten film forming method of claim 1, wherein the adsorption of the gas is performed by supplying SiH4 gas serving as a silicon compound gas and the H2 gas.
6. The tungsten film forming method of claim 1, wherein adsorption of the gas is performed for 10 seconds or more.
7. The tungsten film forming method claim 1, wherein deposition of the main tungsten film is performed while the pressure in the processing chamber is set to 2666 to 26667 Pa, the flow rate of the WF6 gas is set to 150 to 700 sccm (mLmin), and a flow rate of the H2 gas is set to 1000 to 12000 sccm (mLmin).
8. The tungsten film forming method of claim 1, wherein the main tungsten film has a thickness of 25 nm or more.
9. The tungsten film forming method of claim 1, wherein after deposition of the main tungsten film, the substrate is annealed.
10. The tungsten film forming method of claim 9, wherein the annealing is performed at a temperature of 700\xb0 C. or more.
11. The tungsten film forming method of claim 9, wherein the main tungsten film has a thickness of 10 to 25 nm.
12. The tungsten film forming method of claim 1, wherein if the main tungsten film has a thickness of 10 to 25 nm, the crystallinity blocking tungsten film has a thickness of 3 nm or less.
13. The tungsten film forming method of claim 12, wherein the crystallinity blocking tungsten film has a thickness of 1.5 nm or less.
14. The tungsten film forming method of claim 1, wherein deposition of the initial tungsten film is performed for 4 to 20 seconds per cycle while the pressure in the processing chamber is set to 100 to 8000 Pa, the flow rate of the WF6 gas is set to 50 to 500 sccm (mLmin), and a flow rate of the H2 gas is set to 500 to 12000 sccm (mLmin), and the initial tungsten film has a thickness of 0.5 to 3.0 nm.
15. The tungsten film forming method of claim 1, wherein deposition of the initial tungsten film is performed by performing vacuum evacuation while stopping the supply of a purge gas during the purge.
16. The tungsten film forming method of claim 1, further comprising:
performing an initiation process to form nuclei on the surface of the substrate prior to deposition of the initial tungsten film.
17. The tungsten film forming method of claim 16, wherein the initiation process is performed by supplying SiH4 gas.
18. The tungsten film forming method of claim 1, wherein a temperature of a mounting table for supporting the substrate is 350 to 500\xb0 C.
19. The tungsten film forming method of claim 1, wherein a TiN film is formed on the surface of the substrate.
20. A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber, the method comprising:
forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas;
depositing a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film by supplying the WF6 gas and the H2 gas into the processing chamber; and
after stopping the supply of the WF6 gas and increasing a pressure in the processing chamber after completion of deposition of the crystallinity blocking tungsten film, depositing a main tungsten film by supplying the WF6 gas and the H2 gas at a pressure higher than that during deposition of the crystallinity blocking tungsten film while setting a flow rate of the WF6 gas to be higher than that during deposition of the crystallinity blocking tungsten film.
21. The tungsten film forming method of claim 20, wherein a time until deposition of the main tungsten film after completion of deposition of the crystallinity blocking tungsten film is set to 20 to 270 seconds.
22. The tungsten film forming method of claim 20, wherein the crystallinity blocking tungsten film has a thickness of 0.5 to 11.5 nm.
23. The tungsten film forming method of claim 20, wherein deposition of the crystallinity blocking tungsten film is performed while the pressure in the processing chamber is set to 100 to 26667 Pa, the flow rate of the WF6 gas is set to 5 to 200 sccm (mLmin), and a flow rate of the H2 gas is set to 100 to 12000 sccm (mLmin).
24. The tungsten film forming method claim 20, wherein deposition of the main tungsten film is performed while the pressure in the processing chamber is set to 2666 to 26667 Pa, the flow rate of the WF6 gas is set to 150 to 700 sccm (mLmin), and a flow rate of the H2 gas is set to 1000 to 12000 sccm (mLmin).
25. The tungsten film forming method of claim 20, wherein the main tungsten film has a thickness of 25 nm or more.
26. The tungsten film forming method of claim 20, wherein after deposition of the main tungsten film, the substrate is annealed.
27. The tungsten film forming method of claim 20, wherein if the main tungsten film has a thickness of 10 to 25 nm, the crystallinity blocking tungsten film has a thickness of 3 nm or less.
28. The tungsten film forming method of claim 20, wherein deposition of the initial tungsten film is performed for 4 to 20 seconds per cycle while the pressure in the processing chamber is set to 100 to 8000 Pa, the flow rate of the WF6 gas is set to 50 to 500 sccm (mLmin), and a flow rate of the H2 gas is set to 500 to 12000 sccm (mLmin), and the initial tungsten film has a thickness of 0.5 to 3.0 nm.
29. The tungsten film forming method of claim 20, wherein deposition of the initial tungsten film is performed by performing vacuum evacuation while stopping the supplies of a purge gas during the purge.
30. The tungsten film forming method of claim 20, further comprising:
performing an initiation process to form nuclei on the surface of the substrate prior to deposition of the initial tungsten film.
31. The tungsten film forming method of claim 20, wherein a temperature of a mounting table for supporting the substrate is 350 to 500\xb0 C.
32. The tungsten film forming method of claim 20, wherein a TiN film is formed on the surface of the substrate.
33. A tungsten film forming method for forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere in a processing chamber, the method comprising:
forming an initial tungsten film for tungsten nucleation on the surface of the substrate by alternately repeating a supply of WF6 gas which is raw material of tungsten and a supply of H2 gas which is a reducing gas in the processing chamber while performing a purge in the processing chamber between the supplies of the WF6 gas and the H2 gas;
adsorbing a gas containing a material for nucleation onto a surface of the initial tungsten film; and
depositing a main tungsten film onto the substrate on which the gas containing the material for nucleation is adsorbed by supplying the WF6 gas and the H2 gas in the processing chamber.
34. The tungsten film forming method of claim 33, wherein the adsorption of the gas is performed by supplying SiH4 gas serving as a silicon compound gas and the H2 gas.
35. The tungsten film forming method of claim 33, wherein adsorption of the gas is performed for 10 seconds or more.
36. The tungsten film forming method claim 33, wherein deposition of the main tungsten film is performed while the pressure in the processing chamber is set to 2666 to 26667 Pa, the flow rate of the WF6 gas is set to 150 to 700 sccm (mLmin), and a flow rate of the H2 gas is set to 1000 to 12000 sccm (mLmin).
37. The tungsten film forming method of claim 33, wherein the main tungsten film has a thickness of 25 nm or more.
38. The tungsten film forming method of claim 33, wherein after deposition of the main tungsten film, the substrate is annealed.
39. The tungsten film forming method of claim 33, wherein deposition of the initial tungsten film is performed for 4 to 20 seconds per cycle while the pressure in the processing chamber is set to 100 to 8000 Pa, the flow rate of the WF6 gas is set to 50 to 500 sccm (mLmin), and a flow rate of the H2 gas is set to 500 to 12000 sccm (mLmin), and the initial tungsten film has a thickness of 0.5 to 3.0 nm.
40. The tungsten film forming method of claim 33, wherein deposition of the initial tungsten film is performed by performing vacuum evacuation while stopping the supplies of a purge gas during the purge.
41. The tungsten film forming method of claim 33, further comprising:
performing an initiation process to form nuclei on the surface of the substrate prior to deposition of the initial tungsten film.
42. The tungsten film forming method of claim 33, wherein a temperature of a mounting table for supporting the substrate is 350 to 500\xb0 C.
43. The tungsten film forming method of claim 33, wherein a TiN film is formed on the surface of the substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1.-22. (canceled)
23. A navigation apparatus comprising:
a location determining unit for determining a location of the apparatus; and
one or more processors configured to monitor a speed of the apparatus, or a parameter associated therewith; wherein, when in use, the apparatus is arranged to:
detect the location of a temporarily-located road feature by detection of a speed profile of the apparatus corresponding to a predetermined speed change profile;
generate a message comprising data indicative of the location at which the speed profile was detected;
prompt a user of the device for a confirmatory input in response to the detection; and
upon receipt of the confirmatory input, generate confirmatory data.
24. An apparatus as claimed in claim 23, wherein the predetermined speed change profile is substantially U-shaped.
25. An apparatus as claimed in claim 23, wherein the predetermined speed change profile comprises a first portion corresponding to a reduction in speed.
26. An apparatus as claimed in claim 25, wherein the predetermined speed change profile comprises a second portion corresponding to maintaining speed substantially below or substantially equal to a speed limit.
27. An apparatus as claimed in claim 26, wherein the maintenance of the speed is for a minimum predetermined duration.
28. An apparatus as claimed in claim 26, wherein the predetermined speed change profile comprises a third portion corresponding to an increase in speed.
29. An apparatus as claimed in claim 26 wherein the maintenance of the second portion follows the first portion.
30. An apparatus as claimed in claim 28, wherein the third portion follows the second portion.
31. An apparatus as claimed in claim 23 wherein the prompt for confirmatory input comprises one of; a telephone call to the user, a text message or a prompt via the user interface of the navigation apparatus.
32. An apparatus as claimed in claim 23, configured to receive the confirmatory input via a hardware or software button on the navigation apparatus, or via voice input.
33. An apparatus as claimed in claim 23, further configured to transmit the message to a remote processing device.
34. An apparatus as claimed in claim 33, wherein the message further comprises the confirmatory data.
35. A method of identifying a temporarily located road feature that engenders vehicular speed behaviour change, the method comprising:
providing a navigation apparatus comprising:
a location determining unit for determining a location of the apparatus; and
one ore more processors configured to monitor a speed of the apparatus, or a parameter associated therewith;
detecting the location of a temporarily-located road feature by detection of a speed profile of the apparatus corresponding to a predetermined speed change profile
generating a message comprising data indicative of the location at which the speed profile was detected;
prompting a user of the device for a confirmatory input in response to the detection; and
upon receipt of the confirmatory input, generating confirmatory data.
36. A computer program element, embodied on a computer readable medium, comprising computer program code for making a computer execute the method as claimed in claim 35.