1-4. (canceled)
5. An ion generator provided with ion generation units generating ions at two flow passages respectively for allowing the passage of air sent out from a blower individually and discharging the air to outside comprising:
a control section that makes the wind speed of air around the ion generation unit flowing through one of the two flow passages faster than the wind speed of air around the ion generation unit flowing through the other flow passage,
wherein one of the ion generation units includes a discharge electrode where positive ions are generated by discharge, and the other ion generation unit includes a discharge electrode where electrostatic atomized water particles with negative polarity are generated by discharge.
6. The ion generator according to claim 5,
wherein the control section is configured to make the cross section area of the one flow passage in the flowing direction around the ion generation unit narrower than the cross section area of the other flow passage in the flowing direction around the ion generation unit.
7. The ion generator according to claim 6,
wherein the control section is a throttle.
8. The ion generator according to claim 5,
wherein one of the ion generation units is arranged at the position of the downstream side in the flowing direction in comparison to the control section.
9. The ion generator according to claim 5,
wherein the control section is configured to be a bypass passage communicating with the other flow passage at the positions of the upstream and downstream sides in the flowing direction with respect to the ion generation unit arranged at the other flow passage.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A non-volatile memory device, comprising:
a substrate, wherein the substrate has a trench;
a gate disposed over and completely filling the trench, wherein a part of the gate is protruded above the substrate;
a plurality of spacers located on the sidewalls of the protruded part of the gate;
a bottom oxide layer disposed between the gate and the trench surface;
a charge-trapping layer disposed between the gate and the bottom oxide layer, wherein the charge-trapping layer is conformal to a bottom surface of the trench and at least one sidewall of the trench;
a top oxide layer disposed between the gate and the charge-trapping layer;
a plurality of lightly doped regions located in the substrate underneath the spacers; and
a plurality of sourcedrain regions located at both sides of the trench in the substrate.
2. The non-volatile memory device of claim 1, wherein the gate extends over a portion of the substrate outside the trench.
3. The non-volatile memory device of claim 2, wherein bottom oxide layer further extends out of the trench and is disposed between the gate and the substrate.
4. The non-volatile memory device of claim 1, wherein material constituting the spacers comprises silicon nitride.
5. The non-volatile memory device of claim 1, wherein material constituting the gate comprises polysilicon.
6. The non-volatile memory device of claim 1, wherein material constituting the charge-trapping layer is selected from the group consisting of a nitride compound, tantalum oxide, titanic strontium and hafnium oxide.
7. The non-volatile memory device of claim 1, wherein the device further comprises a silicide layer disposed on the gate surface.
8. The non-volatile memory device of claim 7, wherein material constituting the metal silicide layer is selected from the group consisting of cobalt silicide, titanium silicide, tungsten silicide, molybdenum silicide, platinum silicide and nickel silicide.