1. A processing apparatus for use in a processing chamber, the apparatus comprising:
a base substrate for placing a wafer thereon, the base substrate has a coefficient of thermal expansion (CTE);
at least one electrical electrode embedded in or disposed on at least a surface of the base substrate, the electrode is selected from a resistive heating electrode, a plasma-generating electrode, an electrostatic chuck electrode, and an electron-beam electrode, the electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the base substrate CTE;
at least a functional member selected from the group of electrical leads, tabs, inserts, and through-holes, wherein the at least a functional member penetrates the wafer processing apparatus at an interval therefrom, creating a gap;
and a filler for sealing the gap in the wafer processing apparatus,
wherein the filler has an etch-rate of less than 1000 Angstroms per minute (\u212bmin) when the apparatus is exposed to an operating environment at a temperature range of 25-600\xb0 C., the environment is one of: an environment comprising halogens, a plasma etching environment, a reactive ion etching environment, a plasma cleaning environment, and a gas cleaning environment and an operating.
2. The processing apparatus of claim 1, wherein the filler has an etch-rate of less than 1000 Angstroms per minute (\u212bmin) and the environment is operated in a temperature range of 200-600\xb0 C.
3. The processing apparatus of claim 1, wherein the filler has an etch-rate of less than 500 Angstroms per minute (\u212bmin) and the environment is operated in a temperature range of 200-600\xb0 C.
4. The processing apparatus of claim 1, wherein the filler comprises a composition selected from the group of: a high thermal stability zirconium phosphate having an NZP structure of NaZr2 (PO4)3; a glass-ceramic composition containing at least one element selected from the group consisting of elements of the group 2a, group 3a and group 4a; a BaO\u2014Al2O3\u2014B2O3\u2014SiO2 glass; and a mixture of SiO2 and a plasma-resistant material comprising an oxide of Y, Sc, La, Ce, Gd, Eu, Dy, or the like, or a fluoride of one of these metals, or yttrium-aluminum-garnet (YAG).
5. The processing apparatus of claim 1, wherein the filer is a glass-ceramic composition selected from the group of lanthanum aluminosilicate (LAS) glass, magnesium aluminosilicate (MAS) glass, calcium aluminosilicate (CAS) glass, yttrium aluminosilicate (YAS) glass, and mixtures thereof.
6. The processing apparatus of claim 5, wherein the filler composition comprises a mixture of yttrium aluminosilicate (YAS) and a metal oxide powder.
7. The processing apparatus of claim 6, wherein metal oxide powder is selected from the group of aluminum oxide, magnesium oxide, calcium oxide and zinc oxide.
8. The processing apparatus of claim 1, wherein the filler comprises a mixture of yttrium aluminosilicate (YAS) and at least one of: colloidal silica, colloidal alumina, colloidal yttria, colloidal zirconia, and mixtures thereof.
9. The processing apparatus of claim 8, wherein the filler comprises from 50 to 80 wt. % of a glass composition comprising 25-55 wt. % Y2O3, 13 to 35 wt. % Al2O3, and 25 to 55 wt. % SiO2; and from 20 to 50 wt. % of a colloidal alumina having a composition of 20 -25 wt. Al2O3, <1 wt. % nitric acid, and 75-79 wt. % distilled water.
10. The processing apparatus of claim 1, wherein the filler sealing the gap has a CTE in a range of 0.75 to 1.25 times that of the electrode CTE.
11. The processing apparatus of claim 1, wherein the base substrate comprises an electrically conducting material selected from the group of graphite, refractory metals, transition metals, rare earth metals and alloys thereof, and wherein
12. The processing apparatus of claim 11, further comprising at least an electrically insulating coating layer disposed on the base substrate, the coating layer comprising at least one of a nitride, carbide, carbonitride, oxynitride of elements selected from a group consisting of B, Al, Si, Ga, Y, refractory hard metals, transition metals, and combinations thereof.
13. The processing apparatus of claim 12, wherein the electrode is a film electrode, and wherein the film electrode is disposed on the electrically insulating coating layer by at least one of expanding thermal plasma (ETP), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition, ion plasma deposition, metal organic chemical vapor deposition, metal organic vapor phase epitaxy, sputtering, electron beam and plasma spray.
14. The processing apparatus of claim 1, wherein the base substrate is an electrically insulating material selected from the group of oxides, nitrides, carbides, carbonitrides or oxynitrides of elements selected from a group consisting of B, Al, Si, Ga, Y; a high thermal stability zirconium phosphate having an NZP structure of NaZr2 (PO4)3; refractory hard metals; transition metals; oxide, oxynitride of aluminum, and combinations thereof.
15. The processing apparatus of claim 1, wherein the electrode is embedded in the base substrate.
16. The processing apparatus of claim 1, wherein the at least one electrical electrode is a resistive heating electrode.
17. The processing apparatus of claim 1, wherein the at least one electrical electrode is an electrostatic chuck.
18. A wafer processing apparatus for use in a semiconductor processing chamber, the apparatus comprising:
a base substrate for placing a wafer thereon, the base substrate has a coefficient of thermal expansion (CTE),
at least one electrode embedded in or disposed under the base substrate, selected from a resistive heating electrode, a plasma-generating electrode, an electrostatic chuck electrode, and an electron-beam electrode, the electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the base substrate CTE;
at least a coating layer disposed on the base substrate, the coating layer comprising at least one of a nitride, carbide, carbonitride, oxynitride of elements selected from a group consisting of B, Al, Si, Ga, Y, refractory hard metals, transition metals, and combinations thereof.
at least a functional member selected from the group of electrical leads, tabs, inserts, and through-holes, wherein the at least a functional member penetrates the wafer processing apparatus at an interval therefrom, creating a gap;
and a filler for sealing the gap in the wafer processing apparatus, wherein the filler has an etch-rate of less than 1000 Angstroms per minute (\u212bmin) when the apparatus is exposed to an operating environment at a temperature range of 25-600\xb0 C. selected from one of: an environment comprising halogens, a plasma etching environment, a reactive ion etching environment, a plasma cleaning environment, and a gas cleaning environment and an operating.
19. A wafer processing apparatus for use in a semiconductor processing chamber, the apparatus comprising:
a base substrate for placing a wafer thereon, the base substrate has a coefficient of thermal expansion (CTE), the base substrate comprising an electrically insulating material selected from the group of oxides, nitrides, carbides, carbonitrides or oxynitrides of elements selected from a group consisting of B, Al, Si, Ga, Y; a high thermal stability zirconium phosphate having an NZP structure of NaZr2 (PO4)3; refractory hard metals; transition metals; oxide, oxynitride of aluminum, and combinations thereof.
at least one electrode embedded in or disposed under the base substrate, selected from a resistive heating electrode, a plasma-generating electrode, an electrostatic chuck electrode, and an electron-beam electrode, the electrode has a coefficient of thermal expansion (CTE) in a range of 0.75 to 1.25 times that of the base substrate CTE;
at least a coating layer disposed on the base substrate, the coating layer comprising at least one of a nitride, carbide, carbonitride, oxynitride of elements selected from a group consisting of B, Al, Si, Ga, Y, refractory hard metals, transition metals, and combinations thereof,
at least a functional member selected from the group of electrical leads, tabs, inserts, and through-holes, wherein the at least a functional member penetrates the wafer processing apparatus at an interval therefrom, creating a gap;
and a filler for sealing the gap in the wafer processing apparatus,
wherein the filler comprises a composition selected from the group of: a high thermal stability zirconium phosphate having an NZP structure of NaZr2 (PO4)3; a glass-ceramic composition containing at least one element selected from the group consisting of elements of the group 2a, group 3a and group 4a; a BaO\u2014Al2O3\u2014B2O3\u2014SiO2 glass; and a mixture of SiO2 and a plasma-resistant material comprising an oxide of Y, Sc, La, Ce, Gd, Eu, Dy, or the like, or a fluoride of one of these metals, or yttrium-aluminum-garnet (YAG);
the filler has an etch-rate of less than 1000 Angstroms per minute (\u212bmin) when the apparatus is exposed to an operating environment at a temperature range of 25-600\xb0 C. selected from one of: an environment comprising halogens, a plasma etching environment, a reactive ion etching environment, a plasma cleaning environment, and a gas cleaning environment and an operating.
20. The wafer processing apparatus of claim 19, wherein the functional member is an electrical lead, and the gap is created by the lead for connecting the electrode to an external power supply.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
using vision-realistic rendering based on aberration data to produce a rendered digital image;
presenting a person with the rendered digital image;
accepting, through a device, input from the person;
changing the refractive sharpness of the rendered digital image in response to input accepted from the person; and
calculating information about the person’s vision based at least on: input from the person leading to a refractive sharpness change made during the changing step, and a refraction model which relates visual acuity to changes in the refractive sharpness of rendered digital imagery.
2. The method of claim 1, further comprising a rendering step which uses vision-realistic rendering that employs at least one of the following: object space point spread functions, an asymmetric ellipsoid model of vision, a spline-based model of vision, a wavelet-based model of vision.
3. The method of claim 1, wherein the method provides the person with a display-blur-update loop.
4. The method of claim 1, further comprising a blur challenging step which instructs the person to use an interface tool to make specified portions of the rendered digital image equally blurry.
5. The method of claim 1, wherein the presenting step presents the rendered digital image in a software refractor interface, and the accepting step accepts input from the person through the software refractor interface.
6. The method of claim 1, further comprising obtaining a plurality of aberration sets which depend on input from the person and on the refraction model.
7. The method of claim 6, further comprising the step of estimating the person’s accommodation to blurriness based on at least one of the aberration sets.
8. The method of claim 1, further comprising refracting the rendered digital image through a physical lens before presenting the image to the person, and using a refraction characteristic of the physical lens in calculating information about the person’s vision.
9. A method comprising:
producing, through vision-realistic rendering, a rendered digital image, wherein the producing step uses vision-realistic rendering based on at least one of the following to produce the rendered digital image: hypothetical aberration data, gathered actual patient aberration data;
presenting a person with the rendered digital image;
accepting, through a device, input from the person;
changing the refractive sharpness of the rendered digital image in response to input accepted from the person; and
calculating information about the person’s vision based at least on: input from the person leading to a refractive sharpness change made during the changing step, and a refraction model which relates visual acuity to changes in the refractive sharpness of rendered digital imagery.
10. The method of claim 9, wherein the changing step changes the refractive sharpness of only part of the rendered digital image.
11. The method of claim 9, wherein the method provides the person with interactive reverse vision-realistic rendering.
12. The method of claim 9, wherein the calculating step calculates a vision correction recommendation, and the method further comprises reporting the vision correction recommendation.
13. The method of claim 9, further comprising refracting the rendered digital image through a physical lens before presenting the image to the person, and using a refraction characteristic of the physical lens in calculating information about the person’s vision.
14. A system, comprising:
a processor in operable connection with a memory;
the processor configured by data and instructions to perform the following:
produce, through vision-realistic rendering, a rendered digital image;
present a person with the rendered digital image;
accept, through a device, input from the person;
change the refractive sharpness of the rendered digital image in response to input accepted from the person;
obtain a plurality of aberration sets which depend on input from the person and on a refraction model which relates visual acuity to changes in the refractive sharpness of rendered digital imagery;
estimate the person’s accommodation to blurriness based on at least one of the aberration sets; and
calculate information about the person’s vision based at least on: input from the person leading to a refractive sharpness change made during the changing step, and the refraction model.
15. The system of claim 14, wherein the aberration sets comprise a sequence of hypothetical aberration data sets used to calculate information about the person’s vision.
16. The system of claim 14, wherein the system provides the person with interactive control of blurriness in presented rendered digital imagery.
17. The system of claim 14, wherein the system accepts input through a software refractor interface.
18. The system of claim 14, wherein the system is free of physical lenses interposed between the rendered digital imagery and the person’s eyes.
19. The system of claim 14, further comprising a physical lens which refracts the rendered digital image, and wherein a refraction characteristic of the physical lens is used in calculating information about the person’s vision.
20. The system of claim 14, further comprising a means for measuring the person’s accommodation to blurriness.