1. An oxidation reaction process catalyzed by reaction controlled phase-transfer catalyst, characterized in that the reaction process comprises the steps of:
(a) reacting an oxygen source with a substrate in the presence of a reaction controlled phase-transfer catalyst at a temperature of \u221220\xb0 C. to 110\xb0 C. in reaction medium of a homogeneous phase or wateroil two phase, to yield a product; and
(b) separating out the reaction controlled phase-transfer catalyst by centrifugation or filtration after the completion of the reaction, wherein the catalyst can be recycled;
\u2003wherein the reaction controlled phase-transfer catalyst is
heteropolyacid compounds with formula of R1R2R3R4NxHyA, wherein R1, R2, R3, and R4 are independently C1-C20 linear or branched alkyl, cycloalkyl, or benzyl; or R1R2R3N is pyridine or its homologue; A is a heteropolyanion group of P or As containing metal atom of Mo, W or V; x is an integer of from 1 to 9, and y is an integer of from 0 to 8, with the proviso that said heteropolyacid compounds do not contain active oxygen prior to their use in the oxidation reaction; or
a complex represented by the general formula of QmMO3(L), wherein M is a central metal atom selected from the group consisting of Mo and W atom; Q is a cation moiety of formula R1R2R3R4N+, in which R1, R2, R3, and R4 are C1-C20 linear or branched alkyl, branched alkyl, cycloalkyl, or benzyl, or R1R2R3N is pyridine or its homologue; and L is a bidentate ligand containing N or O; when L is N,N-bidentate ligand, it includes R1,R2-2,2\u2032-dipyridine (R1 and R2 can be substituents such as H\u2014, C1-C20 linear or branched alkyl group, cycloalkyl group, aryl group etc. at the position of 2 to 9), R1, R2, R3-o-phenanthroline (R1, R2, and R3 can be substituents such as H\u2014, C1-C20 linear or branched alkyl group, cycloalkyl group, aryl group etc. at the position of 2 to 9), m=0; when L is N,O-bidentate ligand, it includes 8-hydroxy quinoline, 2-carboxy pyridine, Schiff base formed from salicylaldehyde or substituted salicylaldehyde with primary amine and the like, m=1; when L is O,O-bidentate ligand, it includes \u03b2-carbonyl ketone or ester, m=1.
2. The oxidation reaction process according to claim 1, characterized in that the oxidation reaction is epoxidation of alkene, cleavage oxidation of alkene to aldehyde, ketone or carboxylic acid, hydroxylation of alkane, hydroxylation of aromatic hydrocarbon, oxidation of alcohol to ketone, oxidation of ketone to ester, oxidation of thioether to sulfoxide or oxidation of sulfoxide to sulfone.
3. The oxidation reaction process according to claim 2, characterized in that:
the alkene substrates useful in said epoxidation of alkene include aromatic alkenes, aliphatic alkenes, aryl alkyl alkenes, cyclic alkenes, linear or branched alkenes having at least one C\u2550C double bond; dienes, trienes, unsaturated compounds containing more C\u2550C double bonds, or unsaturated polymers; or derivatives of unsaturated aliphatic acids and their esters or glycerides, wherein besides alkyl substituents, the alkene substrates can contain other substituents, such as halogen, carboxy, ester group, alkoxy, hydroxyl, mercapto, nitro, nitrile group, acyl or amino, and the substrates of the epoxidizing reaction can be used alone or in a combination;
the substrates useful in said cleavage oxidation reaction of alkene to aldehyde, ketone or carboxylic acid are in the same range as that for the epoxidation of alkene;
the substrates useful in said hydroxylation of alkane include linear alkanes, branched alkanes, cycloalkanes and substituted cycloalkanes of C5-C30, wherein the substituents can include halogen, carboxy, ester group, alkoxy, hydroxyl, mercapto, nitro, nitrile group, acyl or amino;
the substrates useful in said hydroxylation of aromatic hydrocarbon include arenes and substituted arenes of C6-C30, wherein besides the hydrocarbon substituents, the substituents include halogen, carboxy, ester group, alkoxy, hydroxyl, mercapto, nitro, nitrile group, acyl or amino;
the substrates useful in said oxidation of alcohol to aldehyde or ketone include aromatic alcohols, aliphatic alcohols, aryl alkyl alcohols, cycloalkyl alcohols, linear alcohols or branched alcohols, and glycols can also be oxidized into corresponding aldehydes or ketones;
the substrates useful in said oxidation of ketone to ester include aromatic ketones, aliphatic ketones, aryl alkyl ketones, cyclic ketones, straight chain ketones or branched chain ketones;
the substrates useful in said oxidation of thioether to sulfoxide include aromatic thioethers, aliphatic thioethers, aryl alkyl thioethers, cyclic thioethers, straight chain thioethers or branched chain thioethers;
the substrates useful in said oxidation of sulfoxide to sulfone include aromatic sulfoxides, aliphatic sulfoxides, aryl alkyl sulfoxides, cyclic sulfoxides, straight chain sulfoxides or branched chain sulfoxides.
4. The oxidation reaction process according to claim 1, characterized in that the reaction medium used includes alcohol solvent selected from the group consisting of methanol, ethanol, n-propyl alcohol, isopropyl alcohol, tertiary butyl alcohol, secondary alcohol with branch and dihydroterpineol; paraffinic solvent selected from the group consisting of C5-C18 straight chain alkane, branched chain alkane, and cycloalkane; aromatic solvent selected from the group consisting of benzene, toluene, ethyl benzene, xylene, trimethyl benzene and other monosubstituted or polysubstituted alkyl benzene; ester solvent selected from the group consisting of esters of aliphatic acids, esters of aromatic acids, and trimethyl phosphate, triethyl phosphate, tripropyl phosphate, tributyl phosphate, trioctyl phosphate and other trialkyl phosphate; ether solvent selected from the group consisting of alkyl ethers, aryl ethers or aryl alkyl ethers; ketone solvent selected from the group consisting of dialkyl ketones, aryl alkyl ketones; nitrile solvent selected from the group consisting of acetonitrile, benzyl nitrile; and halogenated hydrocarbon solvent selected from the group consisting of halogenated alkanes and halogenated aromatic hydrocarbons, and these solvents can be used alone or in a combination.
5. The oxidation reaction process according to claim 1, characterized in that the oxygen source used is hydrogen peroxide (H2O2) or alkyl hydroperoxide (ROOH).
6. The oxidation reaction process according to claim 5, characterized in that the hydrogen peroxide used is 5% to 90% aqueous solution of hydrogen peroxide; and the alkyl hydroperoxide used is tertiary butyl hydroperoxide, ethylphenyl hydroperoxide, cumenyl hydroperoxide or cyclohexyl hydroperoxide.
7. The oxidation reaction process according to claim 1, characterized in that the oxygen source used is hydrogen peroxide formed in-situ from substituted hydroquinone, after the completion of the reaction and separation of the catalyst, product and unreacted raw materials, the substituted hydroquinone is regenerated by reacting substituted quinone with hydrogen under the action of hydrogenation catalyst of transition metal.
8. The oxidation reaction process according to claim 7, characterized in that the substituted hydroquinone used has the following general structure:
wherein R5 and R6 are H or C1-C10 alkyl group, and it is also possible to use a mixture of two or more said substituted hydroquinones to generate hydrogen peroxide in-situ.
9. The oxidation reaction process according to claim 8, characterized in that the transition metal hydrogenating catalyst used is those containing palladium, platinum, chromium, rhodium, nickel or ruthenium.
10. The oxidation reaction process according to claim 2, characterized in that said catalyst is heteropolyacid compounds with formula of R1R2R3R4NxHyA, wherein R1, R2, R3, and R4 are C1-C20 linear or branched alkyl, cycloalkyl, or benzyl, or R1R2R3N is pyridine or its homologues; A is a heteropolyanion group of P or As containing metal atom of Mo, W or V; x is an integer of from 1 to 9, and y is an integer of from 0 to 8.
11. The oxidation reaction process according to claim 2, characterized in that said catalyst is a complex represented by the general formula of QmMO3(L), wherein M is the central metal atom selected from the group consisting of Mo and W atom; Q is the cation moiety of formula R1R2R3R4N+, in which R1, R2, R3, and R4 are C1-C20 linear or branched alkyl, cycloalkyl, or benzyl, or R1R2R3N is pyridine or its homologues; and L is a bidentate ligand containing N or O; when L is N, N-bidentate ligand, it includes R1, R2-2,2-dipyridine, wherein (R1 and R2 are substituents independently selected from the group consisting of H\u2014, C1-C20 linear or branched alkyl group, cycloalkyl group, and aryl group at the position of 2 to 9, R1, R2, R3-o-phenanthroline, wherein R1, R2, and R3 are substituents independently selected from the group consisting of H\u2014, C1-C20 linear or branched alkyl group, cycloalkyl group, and aryl group at the position of 2 to 9, m=0; when L is N, O-bidentate ligand, it includes 8-hydroxy quinoline, 2-carboxy pyridine, Schiff base formed from salicylaldehyde or substituted salicylaldehyde with primary amine and the like, m\u22121; when L is O, O-bidentate ligand, it includes \u03b2-carbonyl ketone or ester, m=1.
12. The oxidation reaction process according to claim 10, characterized in that said process is catalytic epoxidizing reaction process of cyclohexene for the preparation of epoxy cyclohexane, wherein the catalyst is used as reaction controlled phase-transfer catalyst, aqueous solution of hydrogen peroxide or in-situ formed hydrogen peroxide is used as oxygen source, and in organic solvent and in the presence of the catalyst, cyclohexene is selectively converted into epoxy cyclohexane through catalytic epoxidation at a temperature of from 30\xb0 C. to 100\xb0 C.
13. The oxidation reaction process according to claim 11, characterized in that said process is catalytic epoxidizing reaction process of cyclohexene for the preparation of epoxy cyclohexane, wherein the catalyst is used as reaction controlled phase-transfer catalyst, aqueous solution of hydrogen peroxide or in-situ formed hydrogen peroxide is used as oxygen source, and in organic solvent and in the presence of the catalyst, cyclohexene is selectively converted into epoxy cyclohexane through catalytic epoxidation at a temperature of from 30\xb0 C. to 100\xb0 C.
14. The oxidation reaction process according to claim 10, characterized in that said process is catalytic epoxidizing reaction process of propylene for the preparation of epoxy propane, wherein the catalyst is used as reaction controlled phase-transfer catalyst, aqueous solution of hydrogen peroxide or in-situ formed hydrogen peroxide is used as oxygen source, and in organic solvent and in the presence of the catalyst, propylene is selectively converted into epoxy propane through catalytic epoxidation at a temperature of from 30\xb0 C. to 100\xb0 C.
15. The oxidation reaction process according to claim 11, characterized in that said process is catalytic epoxidizing reaction process of propylene for the preparation of epoxy propane, wherein the catalyst is used as reaction controlled phase-transfer catalyst, aqueous solution of hydrogen peroxide or in-situ formed hydrogen peroxide is used as oxygen source, and in organic solvent and in the presence of the catalyst, propylene is selectively converted into epoxy propane through catalytic epoxidation at a temperature of from 30\xb0 C. to 100\xb0 C.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A foreign substance inspecting method wherein a height of a foreign substance attaching to a periphery of a wafer is detected, thereby detecting presenceabsence of a foreign substance with not less than a predetermined height.
2. The method according to claim 1, wherein the predetermined height is variable.
3. The method according to claim 2, wherein the periphery of the wafer is irradiated with light in a direction substantially tangent to an outer circumference of the wafer while rotating the wafer, thereby detecting presenceabsence of the foreign substance with not less than the predetermined height.
4. The method according to claim 3, wherein light irradiating the periphery of the wafer is reflected by a reflecting member, is returned to an optical path the light has traveled, and is thereafter received, thereby detecting presenceabsence of the foreign substance with not less than the predetermined height.
5. The method according to claim 3, wherein a light quantity distribution of the light received when the wafer is not present is stored, and an output value of the received light is corrected in accordance with the stored light quantity distribution.
6. A foreign substance inspecting method wherein said method is applied to an exposure apparatus that exposes a mask and wafer separated from each other at a predetermined distance, thereby detecting a height of a foreign substance attaching to the wafer.
7. A foreign substance inspecting method wherein said method is applied to an exposure apparatus that exposes a mask and wafer separated from each other at a predetermined distance, thereby detecting a size and height of a foreign substance attaching to the wafer.
8. A foreign substance inspecting apparatus for inspecting a foreign substance attaching to a wafer comprising:
an irradiation unit for irradiating a periphery of the wafer with light in a direction substantially tangent to an outer circumference of the wafer while rotating the wafer, and
a detection unit for detecting presenceabsence of a foreign substance with not less than a predetermined height on the basis of the irradiating light.
9. The apparatus according to claim 8, further comprising a reflecting member for reflecting the light irradiating the periphery of the wafer, said reflecting member serving to return the irradiating light to an optical path the light has traveled, and said detection unit serving to receive the returned light, thereby detecting presenceabsence of the foreign substance with not less than the predetermined height.
10. An exposure apparatus for exposing a mask and a wafer separated from each other at a predetermined distance comprising a foreign substance inspecting apparatus for inspecting a foreign substance attaching to a wafer having an irradiation unit for irradiating a periphery of the wafer with light in a direction substantially tangent to an outer circumference of the wafer while rotating the wafer, and a detection unit for detecting presenceabsence of a foreign substance with not less than a predetermined height on the basis of the irradiating light.
11. The apparatus according to claim 10, wherein said foreign substance inspecting apparatus detects a foreign substance on said mask.
12. The apparatus according to claim 11, wherein said foreign substance inspecting apparatus is provided in said exposure apparatus.
13. The apparatus according to claim 12, wherein said foreign substance inspecting apparatus is provided at an exposure position of said exposure apparatus.
14. The apparatus according to claim 10, further comprising a foreign substance inspecting apparatus for a patterned wafer.
15. The apparatus according to claim 10, wherein said exposure apparatus is a Proximity X-ray Lithography exposure apparatus.