1. A photovoltaic cell comprising:
a crystal-based semiconductor having one face and another face;
an intrinsic first amorphous-based semiconductor film;
a second amorphous-based semiconductor film including impurities showing one conductivity-type;
a first electrode;
a semiconductor layer including impurities showing another conductivity-type different from said one conductivity-type; and
a second electrode, wherein
said first amorphous-based semiconductor film, said second amorphous-based semiconductor film, and said first electrode are formed in this order on a first region of said one face of said crystal-based semiconductor, and
said semiconductor layer and said second electrode are formed in this order on a second region of said one face of said crystal-based semiconductor.
2. The photovoltaic cell according to claim 1, wherein
said crystal-based semiconductor includes impurities showing said one conductivity-type.
3. The photovoltaic cell according to claim 1, wherein
said semiconductor layer is a third amorphous-based semiconductor film including impurities showing said another conductivity-type,
the photovoltaic cell further comprising an intrinsic fourth amorphous-based semiconductor film provided between said crystal-based semiconductor and said third amorphous-based semiconductor film.
4. The photovoltaic cell according to claim 3, wherein
said first amorphous-based semiconductor film on said first region of said crystal-based semiconductor and said fourth amorphous-based semiconductor film on said second region are a continuous common amorphous-based semiconductor film.
5. The photovoltaic cell according to claim 4, wherein said second amorphous-based semiconductor film and said third amorphous-based semiconductor film are provided at a distance from each other,
the photovoltaic cell further comprising a protective layer provided on a surface of said common amorphous-based semiconductor film between said second amorphous-based semiconductor film and said third amorphous-based semiconductor film.
6. The photovoltaic cell according to claim 3, wherein
said first amorphous-based semiconductor film on said first region of said crystal-based semiconductor and said fourth amorphous-based semiconductor film on said second region are formed in contact with each other.
7. The photovoltaic cell according to claim 6, wherein
said second amorphous-based semiconductor film and said third amorphous-based semiconductor film are formed in contact with each other.
8. The photovoltaic cell according to claim 1, wherein
said first region and said second region are provided at a distance from each other,
the photovoltaic cell further comprising a protective layer provided on a surface of said crystal-based semiconductor between said first region and said second region.
9. The photovoltaic cell according to claim 1, wherein
said semiconductor layer is a doped layer in which said second region of said crystal-based semiconductor is doped with impurities showing said another conductivity-type.
10. The photovoltaic cell according to claim 1, wherein
said second amorphous-based semiconductor film is a doped layer in which said first amorphous-based semiconductor film is doped with impurities showing said another conductivity-type.
11. The photovoltaic cell according to claim 1, wherein
substantially the whole of said another face is a light-incident surface.
12. The photovoltaic cell according to claim 1, further comprising an anti-reflection film provided on the another face of said crystal-based semiconductor.
13. The photovoltaic cell according to claim 12, further comprising an intrinsic fifth amorphous-based semiconductor film provided between said another face of said crystal-based semiconductor and said anti-reflection film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for producing microparticles, in which
at least two fluids to be processed are used,
of them at least one fluid to be processed is a raw material fluid which contains at least one raw material,
at least one fluid to be processed other than the foregoing fluid to be processed is a processing fluid which contains at least one substance to process the raw material, and
the fluids to be processed are mixed in a thin film fluid formed between at least two processing surfaces which are disposed in a position they are faced with each other so as to be able to approach to and separate from each other, at least one of which rotates relative to the other whereby obtaining microparticles of the processed raw material, wherein
by controlling circumferential velocity of the rotation at a converging site in which the raw material fluid and the processing fluid are converged, rate of coalescence of the microparticles by themselves is controlled.
2. The method for producing microparticles according to claim 1, wherein
any one of the fluids to be processed, the raw material fluid and the processing fluid, passes through between the processing surfaces while forming the thin film,
a separate introduction path independent of the flow path through which the at least any one of the fluids to be processed is passed is arranged,
at least one opening which leads to the separate introduction path is arranged in at least any one of the at least two processing surfaces, and
of the raw material fluid and the processing fluid, any other one of the any one of the fluids to be processed is introduced into between the at least two processing surfaces from the opening, whereby mixing the raw material fluid and the processing fluid are mixed in the thin film fluid.
3. The method for producing microparticles according to claim 1, wherein
by controlling the circumferential velocity of the rotation in the range of 0.8 to 41.9 msec at the converging site in which the raw material fluid and the processing fluid are converged.
4. The method for producing microparticles according to claim 1, wherein
the rate of coalescence of the microparticles by themselves is preferably 50% or less, by controlling the circumferential velocity of the rotation at the converging site in which the raw material fluid and the processing fluid are converged.
5. The method for producing microparticles according to claim 2, wherein
by controlling the circumferential velocity of the rotation in the range of 0.8 to 41.9 msec at the converging site in which the raw material fluid and the processing fluid are converged.
6. The method for producing microparticles according to claim 2, wherein
the rate of coalescence of the microparticles by themselves is preferably 50% or less, by controlling the circumferential velocity of the rotation at the converging site in which the raw material fluid and the processing fluid are converged.
7. The method for producing microparticles according to claim 3, wherein
the rate of coalescence of the microparticles by themselves is preferably 50% or less, by controlling the circumferential velocity of the rotation at the converging site in which the raw material fluid and the processing fluid are converged.