1. A method of manufacturing a semiconductor device comprising:
forming a semiconductor film comprising silicon over a substrate;
providing the semiconductor film with a catalytic element that accelerates a crystallization of a semiconductor film;
crystallizing the semiconductor film provided with the catalytic element by a heat treatment;
etching the crystallized semiconductor film into a semiconductor layer;
forming a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;
doping an n-type impurity element into a first portion of the semiconductor layer using the gate electrode as a mask;
doping a p-type impurity element into a second portion apart from a channel region of the semiconductor layer using a resist pattern; and
reducing a concentration of the catalytic element in the channel region by gettering the catalytic element into the first and the second portions by a heat treatment.
2. A method of manufacturing a semiconductor device comprising:
forming a semiconductor film comprising silicon over a substrate;
providing the semiconductor film with a catalytic element that accelerates a crystallization of a semiconductor film;
crystallizing the semiconductor film provided with the catalytic element by a heat treatment;
etching the crystallized semiconductor film into a first semiconductor layer and a second semiconductor layer;
forming a first gate electrode and a second gate electrode each adjacent to the first and second semiconductor layers with a gate insulating film interposed therebetween;
doping an n-type impurity element into a first portion of the first semiconductor layer and a second portion of the second semiconductor layer using the first and second gate electrodes as masks;
doping a p-type impurity element into the second portion and a third portion apart from a channel region of the first semiconductor layer using a resist pattern; and
reducing a concentration of the catalytic element in at least the channel region by gettering the catalytic element into the first and the third portions by a heat treatment.
3. A method of manufacturing a semiconductor device comprising:
forming a semiconductor film comprising silicon over a substrate;
providing the semiconductor film with a catalytic element that accelerates a crystallization of a semiconductor film;
crystallizing the semiconductor film provided with the catalytic element by a heat treatment;
etching the crystallized semiconductor film into a semiconductor layer; forming a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;
doping an n-type impurity element into a first portion of the semiconductor layer using the gate electrode as a mask;
doping a p-type impurity element into a second portion apart from a channel region of the semiconductor layer using a resist pattern; and
reducing a concentration of the catalytic element in the channel region by segregating the catalytic element into the first and the second portions by a heat treatment.
4. A method of manufacturing a semiconductor device comprising:
forming a semiconductor film comprising silicon over a substrate;
providing the semiconductor film with a catalytic element that accelerates a crystallization of a semiconductor film;
crystallizing the semiconductor film provided with the catalytic element by a heat treatment;
etching the crystallized semiconductor film into a first semiconductor layer and a second semiconductor layer;
forming a first gate electrode and a second gate electrode each adjacent to the first and second semiconductor layers with a gate insulating film interposed therebetween;
doping an n-type impurity element into a first portion of the first semiconductor layer and a second portion of the second semiconductor layer using the first and second gate electrodes as masks;
doping a p-type impurity element into the second portion and a third portion apart from a channel region of the first semiconductor layer using a resist pattern; and
reducing a concentration of the catalytic element in at least the channel region by segregating the catalytic element into the first and the third portions by a heat treatment.
5. A method of manufacturing a semiconductor device according to claim 1, wherein the catalytic element comprises at least one element selected from the group consisting of Fe, Co, Ni, Pd, Pt, Cu, and Au.
6. A method of manufacturing a semiconductor device according to claim 2, wherein the catalytic element comprises at least one element selected from the group consisting of Fe, Co, Ni, Pd, Pt, Cu, and Au.
7. A method of manufacturing a semiconductor device according to claim 3, wherein the catalytic element comprises at least one element selected from the group consisting of Fe, Co, Ni, Pd, Pt, Cu, and Au.
8. A method of manufacturing a semiconductor device according to claim 4, wherein the catalytic element comprises at least one element selected from the group consisting of Fe, Co, Ni, Pd, Pt, Cu, and Au.
9. A semiconductor device according to claim 1, wherein the p-type impurity element comprises at least one element selected from the group consisting of B, Al, Ga, and In.
10. A semiconductor device according to claim 2, wherein the p-type impurity element comprises at least one element selected from the group consisting of B, Al, Ga, and In.
11. A semiconductor device according to claim 3, wherein the p-type impurity element comprises at least one element selected from the group consisting of B, Al, Ga, and In.
12. A semiconductor device according to claim 4, wherein the p-type impurity element comprises at least one element selected from the group consisting of B, Al, Ga, and In.
13. A semiconductor device according to claim 1, wherein the n-type impurity element comprises at least one element selected from the group consisting of P, As, and Sb.
14. A semiconductor device according to claim 2, wherein the n-type impurity element comprises at least one element selected from the group consisting of P, As, and Sb.
15. A semiconductor device according to claim 3, wherein the n-type impurity element comprises at least one element selected from the group consisting of P, As, and Sb.
16. A semiconductor device according to claim 4, wherein the n-type impurity element comprises at least one element selected from the group consisting of P, As, and Sb.
17. A method of manufacturing a semiconductor device according to claim 1, wherein a dose of the p-type impurity element is 1\xd71014 to 3\xd71016 ionscm2 and a dose of the n-type impurity element is 1\xd71014 to 1\xd71016 ionscm2.
18. A method of manufacturing a semiconductor device according to claim 2, wherein a dose of the p-type impurity element is 1\xd71014 to 3\xd71016 ionscm2 and a dose of the n-type impurity element is 1\xd71014 to 1\xd71016 ionscm2.
19. A method of manufacturing a semiconductor device according to claim 3, wherein a dose of the p-type impurity element is 1\xd71014 to 3\xd71016 ionscm2 and a dose of the n-type impurity element is 1\xd71014 to 1\xd71016 ionscm2.
20. A method of manufacturing a semiconductor device according to claim 4, wherein a dose of the p-type impurity element is 1\xd71014 to 3\xd71016 ionscm2 and a dose of the n-type impurity element is 1\xd71014 to 1\xd71016 ionscm2.
21. A semiconductor device according to claim 1, wherein a dose of the p-type impurity element is 1 to 3 times higher than a dose of the n-type impurity element.
22. A semiconductor device according to claim 2, wherein a dose of the p-type impurity element is 1 to 3 times higher than a dose of the n-type impurity element.
23. A semiconductor device according to claim 3, wherein a dose of the p-type impurity element is 1 to 3 times higher than a dose of the n-type impurity element.
24. A semiconductor device according to claim 4, wherein a dose of the p-type impurity element is 1 to 3 times higher than a dose of the n-type impurity element.
25. A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a portable telephone, and a projector.
26. A method of manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a portable telephone, and a projector.
27. A method of manufacturing a semiconductor device according to claim 3, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a portable telephone, and a projector.
28. A method of manufacturing a semiconductor device according to claim 4, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a portable telephone, and a projector.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A grill device comprising a grill member that includes:
a housing;
a grill plate made of a heat-conductive material and retained removably on said housing; and
a heating unit including a heating element disposed in said housing, and a heat-conductive plate mounted on said housing and disposed between said heating element and said grill plate for conducting heat from said heating element to said grill plate;
wherein said housing has a heat-radiating side that is formed with a first opening, said heat-conductive plate being mounted on said heat-radiating side and spanning said first opening, said heating element extending into said first opening and being in contact with said heat-conductive plate;
wherein said grill plate is disposed on said heat-radiating side and is in contact with said heat-conductive plate;
wherein said heating unit further includes a heat insulator disposed between said heat-conductive plate and said heat-radiating side to prevent contact therebetween, said heat insulator being formed with a second opening that is registered with said first opening, said heating element extending into said first opening via said second opening;
wherein said heat insulator and said heat-conductive plate are in contact with each other.
2. A grill device comprising a grill member that includes:
a housing;
a grill plate made of a heat-conductive material and retained removably on said housing; and
a heating unit including a heating element disposed in said housing, and a heat-conductive plate mounted on said housing and disposed between said heating element and said grill plate for conducting heat from said heating element to said grill plate;
wherein said housing has a heat-radiating side that is formed with a first opening, said heat-conductive plate being mounted on said heat-radiating side and spanning said first opening, said heating element extending into said first opening and being in contact with said heat-conductive plate;
wherein said heat-radiating side is formed with a mounting region and a surrounding region that surrounds and that forms a vertical clearance with said mounting region, thereby configuring said heat-radiating side with a mounting space surrounded by said surrounding region,
said heat-conductive plate being disposed in said mounting space and cooperating with said surrounding region to form a limit groove around said heating unit,
said grill plate being formed with at least one limit projection that extends into said limit groove for positioning said grill plate on said heat-radiating side.