1. An apparatus for utilizing the heat energy of a weapon propulsion system to produce a vapor explosion, comprising:
an outer shell defining a chamber having a nozzle port;
a body portion disposed within the outer shell and being composed of a first metal having a first predetermined melting temperature, the body portion having a space sized to receive a propulsion device such that the body portion envelopes a substantial portion of the propulsion device, the space having an opening in communication with the nozzle port from which a portion of the propulsion device can extend;
an explosive device embedded in the body portion;
an electrical link connected to the explosive device capable of transmitting a signal to detonate the explosive device, the electrical link extending from the body portion; and
at least one layer fabricated from a second metal embedded within the body portion, the second metal having a second predetermined melting temperature that is less than the first predetermined melting temperature such that the second metal melts before the first metal.
2. The apparatus according to claim 1 wherein said at least one layer of the second metal is exposed within the space of the body portion so as to contact a propulsion device when such a propulsion device is disposed within the space.
3. The apparatus according to claim 1 wherein said at least one layer comprises multiple layers, and said layers are spaced apart and generally parallel to each other.
4. The apparatus according to claim 1 wherein the second metal is chosen from the group comprising lithium, magnesium, sodium, potassium and lead.
5. The apparatus according to claim 1 further comprising a second heat shield disposed between the explosive device and the body portion to thermally isolate the explosive device.
6. The apparatus according to claim 5 wherein the outer shell has a plurality of seams that are configured to rupture upon an explosion occurring within the chamber.
7. The apparatus according to claim 1 wherein the first metal is aluminum.
8. An apparatus for utilizing the heat energy of a weapon propulsion system to produce a vapor explosion, comprising:
an outer shell defining a chamber having a nozzle port;
a body portion disposed within the outer shell and being composed of a first metal having a first predetermined melting temperature, the body portion having a space sized to receive a propulsion device such that the body portion envelopes a substantial portion of the propulsion device, the space having an opening in communication with the nozzle port from which a portion of the propulsion device can extend;
an explosion device embedded in the body portion;
an electrical link connected to the explosive device capable of transmitting a signal to detonate the explosive device, the electrical link extending from the body portion; and
a heat shield that substantially envelopes the body portion and has an aperture therein corresponding to the opening in the space.
9. The apparatus according to claim 8 wherein the heat shield has a third melting temperature that is significantly greater than the first melting temperatures.
10. An apparatus for utilizing the heat energy of a weapon propulsion system to produce a vapor explosion, comprising:
an outer shell defining a chamber having a nozzle port;
a body portion disposed within the outer shell and being composed of a first metal having a first predetermined melting temperature, the body portion having a space sized to receive a propulsion device such that the body portion envelopes a substantial portion of the propulsion device, the space having an opening in communication with the nozzle port from which a portion of the propulsion device can extend;
an explosive device embedded in the body portion;
an electrical link connected to the explosive device capable of transmitting a signal to detonate the explosive device, the electrical link extending from the body portion;
a forward section;
a weapon control module positioned in the forward section for controlling the weapon wherein said outer shell is positioned to the rear of the forward section;
said electrical link being joined between the weapon control module and the explosive device;
a propulsion device positioned within the propulsion device space of the body portion and having a nozzle extending through the opening and the nozzle port, the propulsion device capable of generating an amount of waste heat; and
a heat shield positioned between the outer shell and the body portion and between the outer shell and the forward section to contain the waste heat generated by the propulsion device.
11. The apparatus according to claim 10 further comprising at least one layer composed of a second metal embedded within the body portion, the second metal having a second predetermined melting temperature that is less than the first predetermined melting temperature.
12. The apparatus according to claim 11 whereby said waste heat generated by the propulsion device is sufficient to melt and superheat the second metal thereby producing molten metal and whereby upon termination of the weapon mission, the weapon control system effects detonation of the explosive charge so as to rupture the outer shell and allow the molten metal to react with the liquid medium to produce a vapor explosion.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a thin film transistor with multiple gates using an MILC process, the method comprising:
forming an amorphous silicon film on an insulating substrate, the amorphous silicon film having at least one area formed in a rectangular shape having one side open;
forming a gate electrode to intersect with at least two different areas of the amorphous silicon film;
forming an interlayer insulating film over the insulating substrate, the interlayer insulating film having contact holes exposing portions of the amorphous silicon film;
forming a metal layer contacting the exposed portions of the amorphous silicon film through the contact holes;
forming a semiconductor layer comprising a polycrystalline silicon film by crystallizing the amorphous silicon film using the MILC process; and
forming sourcedrain electrodes contacting the semiconductor layer through the contact holes.
2. The method according to claim 1, wherein the sourcedrain electrodes are formed by patterning deposited sourcedrain electrode materials after removing the metal film and depositing the sourcedrain electrode materials.
3. The method according to claim 1, wherein the sourcedrain electrodes are formed in a second layered structure by sequentially patterning sourcedrain electrode materials and metal film after depositing the sourcedrain electrode materials on the metal film.
4. The method according to claim 1, wherein the metal layer forms a metal silicide on the front surface of the silicon film at a thickness of several hundreds of angstroms.