1. A liquid crystal module, comprising:
a liquid crystal glass, plastic frames, a front frame, and a COF base film, connecting pins of the COF base film closely connects to a first end of the liquid crystal glass, the plastic frames cover a rim of the liquid crystal glass, the front frame abuts against the plastic frames arranged on two opposite surfaces of the liquid crystal glass to fasten the liquid crystal glass; and
wherein the liquid crystal module further comprises a positioning member causing the COF base film to bend toward a predetermined direction, and at least one end of the positioning member is fixed between the front frame and the plastic frame by the front frame;
after the COF base film is bent, a second end of the COF base film is at a distance from the positioning member or from the plastic frames.
2. The liquid crystal module as claimed in claim 1, wherein the positioning member is an L-shaped sheet made by plastic or metallic material, and a width of the positioning member is less than 0.3 mm.
3. A liquid crystal module, comprising:
a liquid crystal glass, plastic frames, a front frame, and a COF base film, connecting pins of the COF base film closely connects to a first end of the liquid crystal glass, the plastic frames cover a rim of the liquid crystal glass, the front frame abuts against the plastic frames arranged on two opposite surfaces of the liquid crystal glass to fasten the liquid crystal glass; and
wherein the liquid crystal module further comprises a positioning member causing the COF base film to bend toward a predetermined direction, and at least one end of the positioning member is fixed between the front frame and the plastic frame by the front frame.
4. The liquid crystal module as claimed in claim 3, wherein an L-shaped holding cavity is defined in an internal side of the positioning member.
5. The liquid crystal module as claimed in claim 4, wherein the positioning member causes a first end of the COF base film connecting to the first end of the liquid crystal glass to bend such that the COF base film is received in the holding cavity.
6. The liquid crystal module as claimed in claim 5, wherein a shape of the front frame is the same with that of the positioning member, and an internal wall of the front frame abuts against the positioning member.
7. The liquid crystal module as claimed in claim 6, wherein a width of the positioning member is less than or equal to the width of the COF base film.
8. The liquid crystal module as claimed in claim 6, wherein a width of the positioning member is less than 0.3 mm.
9. The liquid crystal module as claimed in claim 6, wherein the positioning member is an L-shaped sheet made by plastic or metallic material.
10. The liquid crystal module as claimed in claim 9, wherein the positioning member comprises a horizontal sheet and a vertical sheet connected to the horizontal sheet, after the COF base film is bent, the first end and the second end of the COF base film are respectively parallel to the horizontal sheet and the vertical sheet of the positioning member.
11. The liquid crystal module as claimed in claim 5, wherein after the COF base film is bent, at least the second end of the COF base film is at a distance from the positioning member or the plastic frames.
12. A liquid crystal display, comprising:
a liquid crystal module comprising a liquid crystal glass, plastic frames, a front frame, and a COF base film, connecting pins of the COF base film closely connects to a first end of the liquid crystal glass, the plastic frames covers a rim of the liquid crystal glass, the front frame abuts against the plastic frames arranged on two opposite surfaces of the liquid crystal glass to fasten the liquid crystal glass; and
wherein the liquid crystal module further comprises a positioning member for bending the COF base film toward a predetermined direction, and at least one end of the positioning member is fixed between the front frame and the plastic frame by the front frame.
13. The liquid crystal display as claimed in claim 12, wherein an L-shaped holding cavity is defined in an internal side of the positioning member.
14. The liquid crystal display as claimed in claim 13, wherein the positioning member causes a first end of the COF base film connecting to the first end of the liquid crystal glass to bend such that the COF base film is received in the holding cavity.
15. The liquid crystal display as claimed in claim 14, wherein a shape of the front frame is the same with that of the positioning member, and an internal wall of the front frame abuts against the positioning member.
16. The liquid crystal display as claimed in claim 15, wherein a width of the positioning member is less than or equal to the width of the COF base film.
17. The liquid crystal display as claimed in claim 15, wherein a width of the positioning member is less than 0.3 mm.
18. The liquid crystal display as claimed in claim 15, wherein the positioning member is an L-shaped sheet made by plastic or metallic material.
19. The liquid crystal display as claimed in claim 18, wherein the positioning member comprises a horizontal sheet and a vertical sheet connected to the horizontal sheet, after the COF base film is bent, the first end and the second end of the COF base film are respectively parallel to the horizontal sheet and the vertical sheet of the positioning member.
20. The liquid crystal display as claimed in claim 15, wherein after the COF base film is bent, at least the second end of the COF base film is at a distance from the positioning member or the plastic frames.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a multi-layered wiring substrate having a main surface, a rear surface, and at least one inner layer;
first and second transistors each having first, second, and third transistor electrodes and mounted on the main surface of the multi-layered wiring substrate; and
at least one input-side capacitor having first and second capacitor electrodes and mounted on the rear surface of the multi-layered wiring substrate,
wherein the multi-layered wiring substrate includes:
first wiring layers to be supplied with a first potential formed on at least the main surface and the rear surface;
a second wiring layer to be supplied with a second potential formed on at least the main surface;
third wiring layers to be supplied with a third potential formed on each of the main surface, the rear surface, and the inner layer;
at least one first via conductor for electrically connecting among the first wiring layers in a thickness direction of the multi-layered wiring substrate; and
at least one second via conductor for electrically connecting among the third wiring layers in the thickness direction,
wherein the first transistor is mounted on the first wiring layer on the main surface so that the first transistor electrode of the first transistor is electrically connected to the first wiring layer on the main surface, and the second transistor electrode of the first transistor is electrically connected to the second wiring layer on the main surface,
wherein the second transistor is mounted on the second wiring layer on the main surface so that the first transistor electrode of the second transistor is electrically connected to the second wiring layer on the main surface, and the second transistor electrode of the second transistor is electrically connected to the third wiring layer on the main surface,
wherein the first capacitor electrode of the input-side capacitor is electrically connected to the first wiring layer, and the second capacitor electrode of the input-side capacitor is electrically connected to the third wiring layer, and
the multi-layered wiring substrate includes:
a third via conductor for the input-side capacitor arranged at a position of the first capacitor electrode and for electrically connecting among the first wiring layers in the thickness direction; and
a fourth via conductor for the input-side capacitor arranged at a position of the second capacitor electrode and for electrically connecting among the third wiring layers in the thickness direction, and
the first via conductor being arranged directly below the first transistor, and a cross-sectional area of the first via conductor being larger than cross-sectional areas of the via conductor for the input-side capacitor and the via conductor for the input-side capacitor.
2. The semiconductor device according to claim 1, wherein
the second transistor electrode and the third transistor electrode of each of the first transistor and the second transistor are formed on a main surface of a semiconductor chip where each of the first transistor and the second transistor is formed, and the first transistor electrode of each of the first transistor and the second transistor is formed on a rear surface of the semiconductor chip where each of the first transistor and the second transistor is formed.
3. A semiconductor device comprising:
a multi-layered wiring substrate having a main surface, a rear surface, and at least one inner layer;
first and second transistors each having first, second, and third transistor electrodes and mounted on the main surface of the multi-layered wiring substrate; and
at least one input-side capacitor having first and second capacitor electrodes and mounted on the rear surface of the multi-layered wiring substrate,
wherein the multi-layered wiring substrate includes:
first wiring layers to be supplied with a first potential formed on at least the main surface and the rear surface;
a second wiring layer to be supplied with a second potential formed on at least the main surface;
third wiring layers to be supplied with a third potential formed on each of the main surface, the rear surface, and the inner layer;
at least one first via conductor for electrically connecting among the first wiring layers in a thickness direction of the multi-layered wiring substrate; and
at least one second via conductor for electrically connecting among the third wiring layers in the thickness direction,
wherein the first transistor is mounted on the first wiring layer on the main surface so that the first transistor electrode of the first transistor is electrically connected to the first wiring layer on the main surface, and the second transistor electrode of the first transistor is electrically connected to the second wiring layer on the main surface,
wherein the second transistor is mounted on the second wiring layer on the main surface so that the first transistor electrode of the second transistor is electrically connected to the second wiring layer on the main surface, and the second transistor electrode of the second transistor is electrically connected to the third wiring layer on the main surface,
wherein the first capacitor electrode of the input-side capacitor is electrically connected to the first wiring layer, and the second capacitor electrode of the input-side capacitor is electrically connected to the third wiring layer, and
the multi-layered wiring substrate includes:
a third via conductor for the input-side capacitor arranged at a position of the first capacitor electrode and for electrically connecting among the first wiring layers in the thickness direction; and
a fourth via conductor for the input-side capacitor arranged at a position of the second capacitor electrode and for electrically connecting among the third wiring layers in the thickness direction,
at least one fifth via conductor for electrically connecting among the second wiring layers in the thickness direction,
the at least one fifth via conductor arranged directly below the second transistor, and
wherein a cross-sectional area of the at least one fifth via conductor is larger than cross-sectional areas of the third via conductor for the input-side capacitor and the fourth via conductor for the input-side capacitor.
4. A multi-layered wiring substrate comprising: a main surface; a rear surface; and at least one inner layer, first and second transistor being mounted on the main surface, and at least one input-side capacitor, which has first and second capacitor electrodes, being mounted on the rear surface,
wherein the multi-layered wiring substrate includes:
first wiring layers to be supplied with a first potential formed on at least the main surface and the rear surface;
a wiring layer to be supplied with a second potential formed on at least the main surface;
third wiring layers to be supplied with a third potential formed on each of the main surface, the rear surface, and the inner layer;
at least one first via conductor for electrically connecting among the first wiring layers in a thickness direction of the multi-layered wiring substrate; and
at least one second via conductor for electrically connecting among the third wiring layers in the thickness direction,
wherein the first capacitor electrode of the input-side capacitor is electrically connected to the first wiring layer, and the second capacitor electrode of the input-side capacitor is electrically connected to the third wiring layer, and
the multi-layered wiring substrate includes:
a third via conductor for the input-side capacitor arranged at a position of the first capacitor electrode and for electrically connecting among the first-potential wiring layers in the thickness direction; and
a fourth via conductor for the input-side capacitor arranged at a position of the second capacitor electrode and for electrically connecting among the wiring layers in the thickness direction,
wherein cross-sectional areas of the first via conductor and the second via conductor are larger than cross-sectional areas of the third via conductor and the fourth via conductor.