1. A method of manufacturing a semiconductor device comprising:
a first step of forming a first interlayer insulating film over a substrate and then burying a plurality of first via holes and first wirings in the first interlayer insulating film so as to expose the first wirings thereby forming a first layer,
a second step of forming at least two first magnetization pinning layers electrically insulated from each other over the first wiring in a first region over the first layer,
a third step of completing an MRAM by forming a free magnetization layer overlapping the two first magnetization pinning layer in a plan view, and electrically connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layers situated over the non-magnetic layer,
a fourth step of forming a second interlayer insulating film covering the MRAM, and
a fifth step of burying a second via hole connected with the second magnetization pinning layer and a second wiring connected with the second via hole in the second interlayer insulating film.
2. The method of manufacturing a semiconductor device according to claim 1, further comprising:
a step of forming a protective film comprising an SiN film, a SiCN film, or a stacked film comprising the same so as to cover the MRAM after the third step and before the fourth step.
3. The method of manufacturing a semiconductor device according to claim 1,
wherein the second interlayer insulating film is formed over the second region over the first layer in the fourth step, and
wherein a third via hole connected with the first wiring and a third via hole connected with the third via hole are buried in the second interlayer insulating film in the second region by the identical processing of forming the second via hole and second wiring in the fifth step.
4. The method of manufacturing a semiconductor device according to claim 1, wherein the first and the second interlayer insulating films are formed by plasma polymerizing reaction using a starting material having a cyclic organic silica structure represented by the following formula (1):
5. The method of manufacturing a semiconductor device according to claim 1, comprising:
a step of forming a mask film covering the first wiring exposed in the region where the MRAM is not formed after the first step and before the second step.
6. The method of manufacturing a semiconductor device according to claim 5, wherein the mask film comprises an SiN film or a SiCN film, or a stacked film formed by stacking the SiO2 film and the SiCN film orderly from above.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. (canceled)
2: A method for manufacturing a trip unit that connects to a circuit breaker, said trip unit comprising:
a first block comprising:
a first case including two walls, each wall comprising a through orifice for receiving a shaft, and
a trip member of the circuit breaker mechanically connected to the shaft and accessible from outside the first case; and
a second block comprising a second case and at least one detecting member for detecting an electric fault, each detecting member being positioned inside the second case and including at least one moving element comprising a contact end, that is movable toward the trip member, when the respective detecting member detects an electric fault,
wherein the method comprises:
a) mounting an assembly formed by the shaft and the trip member in the first case,
b) mounting the detecting member in the second case, and
c) assembling the first case and the second case, the contact end cooperating mechanically with the trip member such that the trip member trips the circuit breaker in the assembled configuration of the trip unit when the corresponding detecting member detects an electric fault.
3: The method according to claim 2, wherein before mounting an assembly formed by the shaft and the trip member, the first case and the second case are molded separately.
4: The method according to claim 2, wherein the second case comprises two side walls and wherein after assembling the first case and the second case the side walls obstruct the through orifices, the shaft then not being accessible from outside the trip unit via said through orifices.
5: The method according to claim 2, wherein the trip unit comprises at least one adjusting device, and wherein the method comprises:
calibrating the trip unit using the adjusting device for setting a distance between the trip member and the contact end, measured parallel to the movement of the contact end when an electric fault is detected.
6: The method according to claim 5, wherein the adjusting device comprises an adjusting member for each moving element, the adjusting member cooperating mechanically with the trip member, and wherein during calibrating trip unit each adjusting member is moved toward or away from the corresponding contact end in the assembled configuration of the trip unit.
7: The method according to claim 6, wherein calibrating the trip unit is done during assembling the first case and the second case.
8: The method according to claim 7, wherein during calibrating the trip unit and after moving each adjusting member toward or away from the corresponding contact end, the position of each adjusting member is fixed by welding.
9: The method according to claim 5, wherein the adjusting device comprises a first adjusting member, and wherein during calibrating the trip unit the first adjusting member is used for moving each contact end toward or away from the trip member, parallel to the movement of the contact end when an electric fault is detected in the assembled configuration of the trip unit.
10: The method according to claim 9, wherein during calibrating the trip unit the first adjusting member is accessed from outside of the trip unit and moved.
11: The method according to claim 9, wherein the adjusting device comprises a second adjusting member for each moving element, and wherein during calibrating the trip unit, each adjusting member is used for moving each contact end toward or away from the trip member, parallel to the movement of the contact end when an electric fault is detected in the assembled configuration of the trip unit.
12: The method according to claim 10, wherein the adjusting device comprises a second adjusting member for each moving element, and wherein during calibrating the trip unit, each adjusting member is used for moving each contact end toward or away from the trip member, parallel to the movement of the contact end when an electric fault is detected in the assembled configuration of the trip unit.
13: The method according to claim 9, wherein calibrating the trip unit is done after assembling the first case and the second case.
14: The method according to claim 2, wherein the first case comprises a first hole, wherein the second case comprises a second hole, and wherein in the assembled configuration of the trip unit, the first and second holes are aligned and receives a fastening member for fastening the first case to the second case.