1. An electronic mail server device, comprising:
an address extracting unit which extracts transmission destination information from received electronic mail;
a communication data creating unit which determines whether or not to execute an encryption processing on the electronic mail in accordance with the extracted transmission destination information, and when said communication data creating unit determinates to execute the encryption processing, said communication data creating unit decides a method for executing the encryption processing, executes the encryption processing on the electronic mail by the decided method and creates communication data; and
a transmission unit which transmits the created communication data.
2. The electronic mail server device according to claim 1, wherein the communication data creating unit includes an encryption processing database in which the transmission destination information is associated with information relating to the encryption processing of the electronic mail having the transmission destination information, and
by referring to the encryption processing database, the communication data creating unit decides whether or not to execute the encryption processing, the encryption method and a public key.
3. The electronic mail server device according to claim 1, wherein the transmission destination information is an electronic mail address of a transmission destination.
4. The electronic mail server device according to claim 1, wherein the transmission destination information is a domain name of an electronic mail address of a transmission destination.
5. The electronic mail server device according to claim 2, wherein the transmission destination information is an electronic mail address of a transmission destination.
6. The electronic mail server device according to claim 2, wherein the transmission destination information is a domain name of an electronic mail address of a transmission destination.
7. An electronic mail server device, comprising:
a reception unit which receives communication data;
an electronic mail processing unit which extracts encrypted electronic mail from electronic mail obtained from the received communication data and decrypts the extracted electronic mail; and
a mailbox which temporarily stores the electronic mail obtained by the electronic mail processing unit and according to a request from a client terminal of a recipient, transmits the stored electronic mail to the client terminal.
8. The electronic mail server device according to claim 7, wherein the electronic mail processing unit includes an encryption processing database in which transmitter information of the electronic mail is associated with information relating to a decryption processing of the electronic mail having the transmitter information, and
by referring to the encryption processing database, the electronic mail processing unit decides an encryption method and a secret key.
9. The electronic mail server device according to claim 8, wherein the transmitter information is an electronic mail address of a transmitter.
10. The electronic mail server device according to claim 8, wherein the transmitter information is a domain name of an electronic mail address of a transmitter.
11. An electronic mail processing method, comprising:
a receiving step of receiving communication data;
a decrypting step of extracting encrypted electronic mail from electronic mail obtained from the received communication data and decrypting the extracted electronic mail;
a storing step of temporarily storing the decrypted electronic mail; and
a transmitting step of transmitting the stored electronic mail to a client terminal of a recipient according to a request from the client terminal.
12. The electronic mail processing method according to claim 11, wherein the decrypting step decides an encryption method and a secret key in accordance with an encryption processing database in which transmitter information of the electronic mail is associated with information relating to a decryption processing of the electronic mail having the transmitter information.
13. The electronic mail processing method according to claim 12, wherein the transmitter information is an electronic mail address of a transmitter.
14. The electronic mail processing method according to claim 12, wherein the transmitter information is a domain name of an electronic mail address of a transmitter.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating an integrated circuit comprising:
providing an integrated circuit structure comprising a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure;
etching the seed layer selective to the copper bump structure using a wet etching chemistry comprising H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O, wherein etching the seed layer comprises applying the wet etchant at a temperature of about 30\xb0 C. to about 40\xb0 C.
2. (canceled)
3. The method of claim 1, wherein etching the seed layer comprises applying the wet etchant for a time period of about 60 seconds to about 5 minutes.
4. (canceled)
5. The method of claim 1, further comprising fabricating the integrated circuit structure comprising the copper bump structure and the copper seed layer underlying and adjacent to the copper bump structure.
6. The method of claim 5, wherein fabricating the integrated circuit structure comprises depositing, using physical vapor deposition processes, the copper seed layer over a passivation layer, wherein the copper seed layer is deposited to a thickness of about 500 to about 10000 Angstroms.
7. The method of claim 6, wherein fabricating the integrated circuit structure comprises depositing, using electro-chemical deposition, the copper bump structure to a height of about 40 \u03bcm to about 70 \u03bcm.
8. The method of claim 7, wherein fabricating the integrated circuit structure comprises depositing a titanium-containing barrier layer prior to depositing the copper seed layer, wherein depositing the titanium-containing barrier layer comprises depositing the titanium-containing barrier layer to a thickness of about 500 to about 2000 Angstroms.
9. The method of claim 8, wherein fabricating the integrated circuit structure comprises depositing a SnAg solder layer over the copper bump structure.
10. The method of claim 9, further comprising etching using a dilute hydrofluoric acid etchant the titanium barrier layer selective to the copper bump structure and the solder layer.
11. The method of claim 1, wherein etching the copper seed layer comprises etching the copper seed layer in areas that are not underneath the copper bump structure.
12. The method of claim 11, wherein etching the copper seed layer consists of etching the copper seed layer in areas that are not underneath the copper bump structure in addition to an under-cut of the copper bump structure to an extent less than about 1 micron.
13. The method of claim 1, wherein etching the seed layer comprises applying a wet etchant using a wet etching chemistry wherein H2O2 is present in a volume percentage of about 0.1 to about 0.3.
14-20. (canceled)
21. A method for fabricating an integrated circuit comprising:
providing an integrated circuit structure comprising a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure;
etching the seed layer selective to the copper bump structure using a wet etching chemistry comprising H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O, wherein etching the copper seed layer comprises etching the copper seed layer in areas that are not underneath the copper bump structure in addition to an under-cut of the copper bump structure to an extent less than about 1 micron.
22. A method for fabricating an integrated circuit comprising:
providing an integrated circuit structure comprising a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure;
etching the seed layer selective to the copper bump structure using a wet etching chemistry comprising H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O.
23. The method of claim 22, wherein the wet etching chemistry further comprises NH4OH in an amount sufficient such that the wet etchant has a pH of about 7 to about 9.