1. (canceled)
2. A method of reinforcing bone located in a targeted bone marrow lesion (BML) in a subchondral region of a vertebral body for treating the targeted bone marrow lesion, the method comprising:
identifying a bone marrow lesion in a subchondral region of a vertebral body so as to establish a targeted bone marrow lesion for receiving treatment, the vertebral body including a superior vertebral endplate with a superior articular surface and an inferior vertebral endplate with an inferior articular surface, wherein said identifying includes identifying with MRI;
creating, in the vertebral body that contains the targeted bone marrow lesion in the subchondral region, a subchondral injection path to an area in or adjacent to the targeted bone marrow lesion for injecting an injectable bone filling material into said area for reinforcing bone located in the targeted bone marrow lesion, wherein said creating preserves an existing condition of the superior articular surface of the vertebral body and an existing condition of the inferior articular surface of the vertebral body; and
injecting an injectable bone filling material into said area via the subchondral injection path, wherein the injectable bone filling material is left in the area for hardening in the area so as to reinforce bone located in the targeted bone marrow lesion, wherein the injectable bone filling material is left in the area without also delivering a structural implant device to the area in addition to the injectable bone filling material.
3. The method of claim 2, wherein said creating is conducted without further creating a void in or adjacent to the targeted bone marrow lesion.
4. The method of claim 2, wherein the injectable bone filling material envelopes the targeted bone marrow lesion.
5. The method of claim 2, wherein said creating is performed percutaneously.
6. The method of claim 2, wherein said creating is performed arthroscopically.
7. The method of claim 2, wherein the subchondral region occurs in a facet.
8. The method of claim 2, wherein the subchondral injection path is created with a needle.
9. The method of claim 2, wherein said area is in the targeted bone marrow lesion.
10. A method of reinforcing bone located in a targeted bone marrow lesion (BML) in a subchondral region of a vertebral body for treating the targeted bone marrow lesion, the method comprising:
identifying a bone marrow lesion in a subchondral region of a vertebral body so as to establish a targeted bone marrow lesion for receiving treatment, the vertebral body including a superior vertebral endplate with a superior articular surface and an inferior vertebral endplate with an inferior articular surface, wherein said identifying includes identifying with MRI;
creating, in the vertebral body that contains the targeted bone marrow lesion in the subchondral region, a subchondral injection path to an area in or adjacent to the targeted bone marrow lesion for injecting an injectable bone filling material into said area for reinforcing bone located in the targeted bone marrow lesion, wherein said creating preserves an existing condition of the superior articular surface of the vertebral body and an existing condition of the inferior articular surface of the vertebral body; and
injecting an injectable bone filling material into said area via the subchondral injection path, wherein the injectable bone filling material is left in the area for hardening in the area so as to reinforce bone located in the targeted bone marrow lesion, wherein the injectable bone filling material envelopes the targeted bone marrow lesion.
11. The method of claim 10, wherein said creating is conducted without further creating a void in or adjacent to the targeted bone marrow lesion.
12. The method of claim 10, wherein said creating is performed percutaneously.
13. The method of claim 10, wherein said creating is performed arthroscopically.
14. The method of claim 10, wherein the subchondral region occurs in a facet.
15. The method of claim 10, wherein the subchondral injection path is created with a needle.
16. The method of claim 10, wherein said area is in the targeted bone marrow lesion.
17. A method of reinforcing bone located in a targeted bone marrow lesion (BML) in a subchondral region of a vertebral body for treating the targeted bone marrow lesion, the method comprising:
identifying a bone marrow lesion in a subchondral region of a vertebral body so as to establish a targeted bone marrow lesion for receiving treatment, the vertebral body including a superior vertebral endplate with a superior articular surface and an inferior vertebral endplate with an inferior articular surface, wherein said identifying includes identifying with MRI;
creating, in the vertebral body that contains the targeted bone marrow lesion in the subchondral region, a subchondral injection path to an area in or adjacent to the targeted bone marrow lesion for injecting an injectable bone filling material into said area for reinforcing bone located in the targeted bone marrow lesion, wherein said creating preserves an existing condition of the superior articular surface of the vertebral body and an existing condition of the inferior articular surface of the vertebral body, and is conducted without further creating a void in or adjacent to the targeted bone marrow lesion; and
injecting an injectable bone filling material into said area via the subchondral injection path, wherein the injectable bone filling material is left in the area for hardening in the area so as to reinforce bone located in the targeted bone marrow lesion.
18. The method of claim 17, wherein the subchondral region occurs in a facet.
19. The method of claim 17, wherein said area is in the targeted bone marrow lesion.
20. The method of claim 17, wherein said creating is performed percutaneously.
21. The method of claim 17, wherein the subchondral injection path is created with a needle.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor workpiece processing method comprising:
providing a semiconductor processor adapted to process a semiconductor workpiece using a process fluid;
transporting the process fluid relative to the semiconductor processor using a connection;
flushing the connection using a flush fluid;
monitoring the flush fluid during the flushing; and
wherein the monitoring comprises monitoring the flush fluid ir the connection.
2. The method according to claim 1 wherein the flushing comprises at least one of priming and rinsing the connection.
3. The method according to claim 1 wherein the monitoring comprises monitoring turbidity of the flush fluid.
4. The method according to claim 3 wherein the monitoring turbidity comprises monitoring a percent of solids present within a liquid of the flush fluid.
5. The method according to claim 1 further comprising controlling the flushing responsive to the monitoring.
6. The method according to claim 1 further comprising supplying the process fluid to a process chamber of the semiconductor processor after the flushing.
7. The method according to claim 1 further comprising receiving a start-up command of the semiconductor processor and the flushing comprises priming responsive to the receiving.
8. The method according to claim 7 wherein the priming comprises priming with flush fluid comprising the process fluid.
9. The method according to claim 7 further comprising:
monitoring turbidity of the flush fluid; and
controlling the flushing responsive to the monitoring.
10. The method according to claim 9 wherein the monitoring turbidity comprises monitoring a percent of solids present within a liquid of the flush fluid.
11. The method according to claim 1 further comprising receiving a halt command of the semiconductor processor and the flushing comprises rinsing responsive to the receiving.
12. The method according to claim 11 wherein the flushing comprises rinsing with flush fluid comprising a rinse fluid.
13. The method according to claim 11 further comprising:
monitoring turbidity of the flush fluid; and
controlling the flushing responsive to the monitoring.
14. The method according to claim 13 wherein the monitoring turbidity comprises monitoring a percent of solids present within a liquid of the flush fluid.
15. The method according to claim 1 wherein the flush fluid and the process fluid comprise different fluids.
16. The method according to claim 15 wherein the flushing comprises flushing using the flush fluid comprising a rinse fluid to rinse particulate matter from the connection.
17. The method according to claim 1 wherein the monitoring comprises monitoring a percent of solids present within a liquid of the flush fluid.
18. A semiconductor workpiece processing method comprising:
providing a semiconductor processor adapted to process a semiconductor workpiece using a process fluid;
transporting the process fluid relative to the semiconductor processor using a connection;
flushing the connection using a flush fluid;
monitoring the flush fluid during the flushing; and
receiving a start-up command of the semiconductor processor and the flushing comprises priming responsive to the receiving.
19. The method according to claim 18 wherein the priming comprises priming with flush fluid comprising the process fluid.
20. The method according to claim 18 further comprising:
monitoring turbidity of the flush fluid; and
controlling the flushing responsive to the monitoring.
21. The method according to claim 20 wherein the monitoring turbidity comprises monitoring a percent of solids present within a liquid of the flush fluid.
22. A semiconductor workpiece processing method comprising:
providing a semiconductor processor adapted to process a semiconductor workpiece using a process fluid;
transporting the process fluid relative to the semiconductor processor using a connection;
flushing the connection using a flush fluid;
monitoring the flush fluid during the flushing; and
receiving a halt command of the semiconductor processor and the flushing comprises rinsing responsive to the receiving.
23. The method according to claim 22 wherein the flushing comprises rinsing with flush fluid comprising a rinse fluid.
24. The method according to claim 22 further comprising:
monitoring turbidity of the flush fluid; and
controlling the flushing responsive to the monitoring.
25. The method according to claim 24 wherein the monitoring turbidity comprises monitoring a percent of solids present within a liquid of the flush fluid.