1. A solid-state electronic device comprising:
an oxide layer that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a starting material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting essentially of the bismuth (Bi) and the niobium (Nb); wherein
the oxide layer has a crystal phase of a pyrochlore crystal structure.
2. The solid-state electronic device according to claim 1, wherein
the oxide layer has a carbon content percentage of at most 1.5 atm %.
3. The solid-state electronic device according to claim 1, wherein
the precursor layer is provided with an imprinted structure by imprinting the precursor layer while the precursor layer is heated at a temperature from 80\xb0 C. to 300\xb0 C. in an atmosphere containing oxygen before the oxide layer is formed.
4. The solid-state electronic device according to claim 3, wherein
the imprinting is performed with a pressure in a range from 1 MPa to 20 MPa.
5. The solid-state electronic device according to claim 3, wherein
the imprinting is performed using a mold that is preliminarily heated to a temperature in a range from 80\xb0 C. to 300\xb0 C.
6. The solid-state electronic device according to claim 1, wherein the solid-state electronic device is a capacitor.
7. A solid-state electronic device comprising:
an oxide layer that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a starting material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein
the oxide layer has a crystal phase of a pyrochlore crystal structure.
8. The solid-state electronic device according to claim 7, wherein
the precursor layer is provided with an imprinted structure by imprinting the precursor layer while the precursor layer is heated at a temperature from 80\xb0 C. to 300\xb0 C. in an atmosphere containing oxygen before the oxide layer is formed.
9. The solid-state electronic device according to claim 8, wherein
the imprinting is performed with a pressure in a range from 1 MPa to 20 MPa.
10. The solid-state electronic device according to claim 8, wherein
the imprinting is performed using a mold that is preliminarily heated to a temperature in a range from 80\xb0 C. to 300\xb0 C.
11. The solid-state electronic device according to claim 7, wherein the solid-state electronic device is a capacitor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. Ultrasonic measurement section for the flow measurement of fluid, comprising:
a passage through which the fluid flows and with two ultrasonic transmitting and receiving transducers spaced in the fluid flow direction, the sound being guidable in Z-shaped manner between the transmitting and receiving transducers by means of at least two reflectors, the measurement section comprising a single plastic piece and the reflectors being located on bevels of the passage wall.
2. Ultrasonic measurement section according to claim 1, wherein the measurement section is in the form of a stepped passage.
3. Ultrasonic measurement section according to claim 1, wherein the measurement section is in the form of a stepped passage and the at least two reflectors are located on passage bevels.
4. Ultrasonic measurement section according claim 1, wherein the measurement is made from high-purity Teflon.
5. Ultrasonic measurement section according to claim 1, wherein the measurement section is made from one piece.
6. Ultrasonic measurement section according to claim 1, wherein the measurement section is produced by injection molding.
7. Ultrasonic measurement section according to claim 1, wherein the reflectors are made from metal, air or plastic.
8. Ultrasonic measurement section according to claim 1, wherein the reflectors are located on the inside or outside of measurement section or are injection molded in the wall of measurement section.
9. Ultrasonic measurement section according to claim 1, wherein the wall of ultrasonic measurement section on which a reflector is located has a radius.
10. Ultrasonic measurement section according to claim 1, wherein a temperature measurement sensor is fitted to the measurement section.
11. Method for the flow measurement of a fluid, the method comprising the steps of:
providing an ultrasonic measurement section having a passage and two ultrasonic transmitting and receiving transducers spaced in the fluid flow direction, the sound being guided in Z-shaped manner between the transmitting and receiving transducers by means of at least two reflectors, the measurement section comprising a single plastic piece and the reflectors being located on bevels of the passage wall; and
passing fluid through said passage of said single plastic piece such that the sound is reflected on said bevels of said passage wall.
12. Method for flow measurement according to claim 11, wherein the sound is guided by a stepped measurement section.
13. Method for flow measurement according to claim 11, wherein the sound is guided by a reflector of metal, air or plastic.
14. Method for flow measurement according to claim 11, wherein the flow of gases or liquids is measured.
15. Method for flow measurement according to claim 11, wherein in addition to the flow measurement the fluid temperature is measured.
16. Method for flow measurement according to claim 11, wherein the sound is guided on a reflector located inside or outside measurement section or which is injection molded in the wall of the measurement section.
17. Method for the production of an ultrasonic measurement section according to claim 1, comprising the following method steps:
(a) two expanding sliders, which together form a stepped contour, are placed on one another;
(b) the measurement section is produced by injection molding around sliders; and
(c) the two sliders are extracted on different sides of measurement section.
18. Method for producing an ultrasonic measurement section according to claim 17, wherein subsequently ultrasonic transmitting and receiving transducers are fitted outside the measurement section.
19. Method for producing an ultrasonic measurement section according to claim 17, wherein reflectors are fitted outside or inside measurement section or are injection molded in the wall of measurement section.
20. Method for producing an ultrasonic measurement section according to claim 18, wherein the measurement section is made from high-purity Teflon.
21. Method for producing an ultrasonic measurement section according to claim 18, wherein a temperature measurement sensor is fitted to the measurement section.
22. Ultrasonic measurement section produced according to claim 18, wherein ultrasonic measurement section is made in one piece.
23. Ultrasonic measurement section according to claim 22, wherein the measurement section has a Z-shaped sound path.
24. Ultrasonic measurement section according to claim 22, wherein the ultrasonic measurement section is made of Teflon.
25. Ultrasonic measurement section according to claim 22, wherein the ultrasonic measurement section contains at least two reflectors, which are located on the inside or outside of measurement section or are injection molded into the wall of measurement section.
26. Ultrasonic measurement section according to claim 22, wherein a temperature measurement sensor is fitted to the measurement section.