1. A semiconductor device comprising:
an inner cover made of a material containing silicon as the main constituent thereof, in which cover LSI chips each having a semiconductor circuit are located;
an interconnection substrate made of a material containing silicon as the main constituent thereof which substrate is connected to said inner cover, said interconnection substrate being provided with cantilever electrode terminals each having a pyramid-like projection at a forward portion thereof, facing said LSI chips, which terminals are in electrical contact with said LSI chips, an interconnection layer connected to said electrode terminals, and electrode pads for performing electrical connection to outer portions which pads are connected to said interconnection layer; and
an outer cover made of a metal different from silicon or a macromolecular material,
wherein said pyramid-like projections are formed on a first surface of said interconnection substrate facing said LSI chips and wherein said cantilever electrode terminals are formed by grooves formed in a second surface of said interconnection substrate facing away from said LSI chips so that said grooves underlie said pyramid-like projections.
2. A semiconductor device according to claim 1, further comprising means for exerting a compressive force on said pyramid-like projections against said LSI chips.
3. A semiconductor device according to claim 2, wherein said means for exerting the compressive force includes forming said cantilever electrode terminals to be sufficiently thin to deflect from the contact of said pyramid-like projections with said LSI chips.
4. A semiconductor device comprising:
an inner cover made of a material containing silicon as the main constituent thereof, in which cover LSI chips each having a semiconductor circuit are located;
an interconnection substrate made of a material containing silicon as the main constituent thereof which substrate is connected to said inner cover, said interconnection substrate being provided with cantilever electrode terminals each having a pyramide-like projection at a forward portion thereof, facing said LSI chips, which terminals are in electrical contact with said LSI chips, an interconnection layer connected to said electrode terminals, and electrode pads for performing electrical connection to outer portions which pads are connected to said interconnection layer; and
an outer cover made of a metal different from silicon or a macromolecular material,
wherein said cantilever electrode terminals have a thickness, determined by a depth of a plurality of grooves, such that said cantilever electrode terminals deflect to provide compressive forces on said pyramid-like projections against said LSI chips.
5. A semiconductor device according to claim 4, further comprising means for exerting the compressive force on said pyramid-like projections against said LSI chips.
6. A semiconductor device according to claim 5, wherein said means for exerting the compressive force includes forming said cantilever electrode terminals to be sufficiently thin to deflect from the contact of said pyramid-like projections with said LSI chips.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A charge control agent comprising:
a specific type of metal complexes represented by the following chemical formula (1) or chemical formula (2):
in formula (1), R1 represents an hydroxyl group or an hydrogen atom; R2 and R3 independently represent a substituted or unsubstituted alkyl group with 1-12 carbon atoms, an alkenyl with 2-12 carbon atoms, an alkoxy group with 1-12 carbon atoms, a substituted or unsubstituted aryl group with 6-12 carbon atoms, a nitryl group, an amidogen group, an halogen atom, or an hydrogen atom; R4 represents an hydrogen atom, a potassium atom, or a sodium atom; M represents a metal atom ranges from divalent to tetravalent, A is a cation, and m is an integer from 1 to 6;
in formula (2), R1 represents an hydroxyl group or an hydrogen atom; R2 and R3 independently represent substituted or unsubstituted alkyls with 1-12 carbon atoms, an alkenyl with 2-12 carbon atoms, an alkoxy group with 1-12 carbon atoms, a substituted or unsubstituted aryl group with 6-12 carbon atoms, a nitryl group, an amidogen group, an halogen atom, or an hydrogen atom; R4 represents an hydrogen atom, a potassium atom or a sodium atom; R5 and R6 independently represent a hydroxyl group, a water molecule, or a halogen atom; M represents a metal atom ranges from divalent to tetravalent, A is a cation, and m is an integer from 1 to 6.
2. A toner comprising a resin, a colorant, and the charge control agent of claim 1.