1-80. (canceled)
81. A method of manufacturing a solar cell, comprising:
depositing a p-type semiconductor absorber layer comprising a copper indium diselenide (CIS) based alloy material by sputtering from a first conductive target and a second conductive target, such that the deposited p-type semiconductor absorber layer is copper deficient; wherein:
the first target comprises a mixture of copper and selenium, or a mixture of copper, indium and at least one of aluminum and gallium; and
the second target comprises a mixture of indium, selenium and at least one of aluminum and gallium, or a mixture of copper, indium and at least one of aluminum and gallium.
82. The method of claim 81, wherein:
the first target comprises the mixture of copper and selenium; and
the second target comprises the mixture of indium, selenium and at least one of aluminum and gallium.
83. The method of claim 82, wherein the mixture of copper and selenium comprises about 30 atomic percent of the copper and 70 atomic percent of the selenium.
84. The method of claim 82, wherein the mixture of indium, selenium and at least one of aluminum and gallium comprises less than about 60 atomic percent of the selenium.
85. The method of claim 82, further comprising adjusting a power ratio between the first target and the second target so that the deposited p-type semiconductor absorber layer is copper deficient.
86. The method of claim 82, wherein the first conductive target is disposed on a first planar or cylindrical rotary magnetron and the second conductive target is disposed on a second planar or cylindrical rotary magnetron.
87. The method of claim 82, wherein at least one of the first and the second targets further comprises sodium.
88. The method of claim 81, wherein:
the first target comprises the mixture of copper, indium and at least one of aluminum and gallium, such that an atomic ratio of copper to indium and at least one of aluminum and gallium is less than one; and
the second target comprises the mixture of copper, indium and at least one of aluminum and gallium, such that an atomic ratio of copper to indium and at least one of aluminum and gallium is less than one.
89. The method of claim 88, wherein:
the CIS based alloy material comprises a copper indium aluminum diselenide alloy material in which the atomic ratio of copper to indium and aluminum is less than one;
the first target comprises the mixture of copper, indium and aluminum, such that the atomic ratio of copper to indium and aluminum is less than one; and
the second target comprises the mixture of copper, indium and aluminum, such that the atomic ratio of copper to indium and aluminum is less than one.
90. The method of claim 88, wherein:
the CIS based alloy material comprises a copper indium gallium diselenide (CIGS) alloy material in which the atomic ratio of copper to indium and gallium is less than one;
the first target comprises the mixture of copper, indium and gallium, such that the atomic ratio of copper to indium and gallium is less than one; and
the second target comprises the mixture of copper, indium and gallium, such that the atomic ratio of copper to indium and gallium is less than one.
91. The method of claim 88, wherein the first conductive target is disposed on a first planar or cylindrical rotary magnetron and the second conductive target is disposed on a second planar or cylindrical rotary magnetron.
92. The method of claim 91, wherein the step of depositing the p-type semiconductor absorber layer comprises reactively sputtering the CIS based alloy material from the first and the second targets in a selenium containing ambient.
93. The method of claim 92, wherein the step of reactively sputtering the CIS based alloy material comprises AC sputtering the CIS based alloy material.
94. The method of claim 92, wherein the selenium containing ambient comprises hydrogen selenide gas.
95. The method of claim 88, wherein at least one of the first and the second targets further comprises sodium.
96. The method of claim 81, further comprising:
passing a web substrate from an input module to an output module through a plurality of independently isolated, connected process modules at the same time such that the web substrate continuously extends from the input module to the output module while passing through the plurality of the independently isolated, connected process modules;
sputtering a conductive film on a surface of the substrate;
sputtering the p-type semiconductor absorber layer on the conductive film;
sputtering an n-type semiconductor layer on the p-type semiconductor absorber layer to form a p-n junction; and
sputtering a transparent electrically conductive top contact layer on the n-type semiconductor layer;
wherein each of the conductive film, the p-type semiconductor absorber layer, the n-type semiconductor layer and the transparent electrically conductive top contact layer are deposited at the same time on the web substrate in a respective one of the plurality of the independently isolated, connected process modules.
97. A conductive sputtering target comprising a mixture of copper, indium and at least one of aluminum and gallium, such that an atomic ratio of copper to indium and at least one of aluminum and gallium is less than one.
98. The target of claim 97, wherein the target consists essentially of the mixture of copper, indium and aluminum, such that the atomic ratio of copper to indium and aluminum is less than one.
99. The target of claim 97, wherein the target consists essentially of the mixture of copper, indium and gallium, such that the atomic ratio of copper to indium and gallium is less than one.
100. The target of claim 97, wherein the target is disposed on a planar or cylindrical rotary magnetron.
101. The target of claim 97, wherein the target further comprises sodium.
102. A method of making a conductive sputtering target comprising a mixture of copper, indium and at least one of aluminum and gallium, the method comprising forming the target by powder metallurgy or casting such that an atomic ratio of copper to indium and at least one of aluminum and gallium in the target is less than one.
103. The method of claim 102, wherein the target consists essentially of the mixture of copper, indium and aluminum, such that the atomic ratio of copper to indium and aluminum is less than one.
104. The method of claim 102, wherein the target consists essentially of the mixture of copper, indium and gallium, such that the atomic ratio of copper to indium and gallium is less than one.
105. The method of claim 102, further comprising disposing the target on a planar or cylindrical rotary magnetron.
106. The method of claim 102, wherein the target is formed by powder metallurgy.
107. The method of claim 102, wherein the target is formed by casting.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A composition comprising a dialkyl peroxydicarbonate containing 10 to 90% by weight, based on the weight of the dialkyl peroxydicarbonate, of at least one compound having the Structure I,
where R1 and R2 are the same or different and are selected from the group consisting of alkyl of 1 to 3 carbons.
2. A composition as defined in claim 1 wherein the compound having Structure I is diethyl maleate.
3. A composition as defined in claim 1 wherein the dialkyl peroxydicarbonate has the Structure II:
where R4 and R5 are the same or different and are selected from the group consisting of substituted or unsubstituted alkyl of 2 to 22 carbons, substituted or unsubstituted bicycloalkyl of 7 to 9 carbons, and substituted or unsubstituted aralkyl of 7 to 12 carbons, with substituents for alkyl being one or more alkyl of 1 to 4 carbons, alkoxy of 1 to 6 carbons, or phenoxy, substituents for cycloalkyl being one or more alkyl of 1 to 4 carbons, and substituents for aralkyl being one or more alkyl of 1 to 4 carbons, chloro, bromo, methoxy or carboxy.
4. A composition as defined in claim 3 wherein R4 and R5 are the same or different and are selected from the group consisting of substituted or unsubstituted alkyl and substituted or unsubstituted cycloalkyl.
5. A composition as defined in claim 4 wherein R4 and R5 are the same or different and are substituted or substituted alkyl of 2 to 22 carbons.
6. A composition as defined in claim 1 wherein the dialkyl peroxydicarbonate is selected from the group consisting of di-n-propyl peroxydicarbonate, diisopropyl peroxydicarbonate, di-sec-butyl peroxydicarbonate and di(2-ethylhexyl) peroxydicarbonate.
7. Polyvinyl chloride suitable for food contact use containing the decomposition products of an initiating effective amount of a composition as defined in claim 1.
8. A process for the polymerization of vinyl chloride wherein the polyvinyl chloride so produced is suitable for food contact which comprises treating vinyl chloride with an initiating effective amount of a composition as defined in claim 1 under conditions of time, temperature and pressure sufficient to initiate and complete said polymerization of vinyl chloride.