We claim:
1. A data storing method of a dynamic RAM, comprising:
a first operation of reading data, generating a check bit for error detection and correction, and storing the check bit when a dynamic RAM enters an operation mode of performing a data retaining operation;
a refresh operation performed on said data and, as necessary, on said check bit by an error correcting operation using said check bit in a predetermined cycle so that an error bit in said data can be corrected; and
a second operation of correcting an error bit in said data by using said check bit before the dynamic RAM returns from said data retaining operation to a normal operation,
said predetermined cycle being set on the basis of refresh cycle information which is stored in a non-volatile manner.
2. The data storing method of a dynamic RAM according to claim 1,
wherein said data and said check bit are stored in the dynamic RAM, and
wherein the error detecting and correcting operation using said check bit is performed by a built-in error detecting and correcting circuit.
3. A semiconductor integrated circuit device comprising:
a memory circuit including a dynamic memory cell which has a storage capacitor and an address selection MOSFET, and having an information retaining mode during which data is not read from or written to other circuits; and
a data retention control circuit, said data retention control circuit including an ECC circuit and a refresh cycle setting circuit,
wherein said ECC circuit is activated when said memory circuit enters an information retaining mode to perform a first operation of reading plural data stored in said memory circuit and generating and storing a check bit for error detection and correction, and is activated when said memory circuit returns from said information retaining mode to a normal operation mode in which data is read from or written to other circuit to perform a second operation of reading the plural data and the check bit stored in said memory circuit, correcting an error bit in the data, and writing corrected data into a corresponding memory cell,
wherein said refresh cycle setting circuit is controlled to perform a refresh operation in a predetermined cycle in which an error in the data can be corrected by using said check bit by said ECC circuit, and
wherein information indicative of said predetermined cycle is held in a non-volatile manner.
4. The semiconductor integrated circuit device according to claim 3, wherein said check bit is stored in a memory cell included in said memory circuit.
5. The semiconductor integrated circuit device according to claim 3 or 4, wherein said ECC circuit can correct two bits or more by using a cyclic code, allows data and a check bit to be stored in a memory cell read by an operation of selecting one of word lines in the memory circuit, and reads or writes data and the check bit corresponding to said one word line.
6. A semiconductor memory device having a plurality of memory cells to be refreshed for retaining data, comprising:
a first circuit for generating additional information on the basis of information of said plurality of memory cells when said semiconductor memory device changes from a normal operation mode in which data is written to or read from the outside of said semiconductor memory device to a refresh mode in which refresh is made in a refresh cycle, and for detecting and correcting an error in said plurality of memory cells on the basis of information of said plurality of memory cells and said additional information when said semiconductor memory device changes from said refresh mode to said normal operation mode;
a memory circuit for storing said additional information; and
a second circuit for storing information indicative of said refresh cycle in a non-volatile manner,
said refresh cycle in said refresh mode being determined on the basis of said information stored in said second circuit.
7. The semiconductor memory device according to claim 6, wherein said first circuit detects and corrects an error in said plurality of memory cells on the basis of the information of said plurality of memory cells and said additional information only when said semiconductor memory device changes from said refresh mode to said normal operation mode.
8. The semiconductor memory device according to claim 6, wherein said first circuit does not perform said detecting operation and said correcting operation during said refresh mode period except for the case where said semiconductor memory device changes from said refresh mode to said normal operation mode.
9. The semiconductor memory device according to claim 6, wherein said first circuit performs said detecting operation and said correcting operation a plurality of times during said refresh mode period.
10. The semiconductor memory device according to claim 6, wherein said first circuit periodically performs said detecting operation and said correcting operation during said refresh mode period.
11. A semiconductor memory device having a plurality of memory cells to be refreshed for retaining data, comprising:
a first circuit for generating first information on the basis of information held in said plurality of memory cells when said semiconductor memory device changes from a normal operation mode to a refresh mode and detecting and correcting an error in said plurality of memory cells on the basis of said first information when said semiconductor memory device changes from said refresh mode to said normal operation mode; and
a second circuit for storing information indicative of a refresh cycle in a non-volatile manner,
wherein said original refresh cycle at the time of the change from said normal operation mode to said refresh mode is determined on the basis of said information stored in said second circuit.
12. The semiconductor memory device according to claim 11, further comprising a refresh cycle adjusting circuit for adjusting said refresh cycle in said refresh mode in accordance with a temperature of said semiconductor memory device.
13. The semiconductor memory device according to claim 12, wherein said refresh cycle adjusting circuit includes a cell leak monitor.
14. A semiconductor memory device having a plurality of memory cells to be refreshed for retaining data, comprising:
a first circuit for generating first information on the basis of information held in said plurality of memory cells when said semiconductor memory device changes from a normal operation mode in which reading or writing is performed to a self refresh mode in which refresh is made in a refresh cycle and detecting and correcting an error in the information stored in said plurality of memory cells on the basis of the information stored in said plurality of memory cells and said first information when said semiconductor memory device changes from said refresh mode to said normal operation mode; and
a refresh cycle adjusting circuit for adjusting said refresh cycle in said self refresh mode in accordance with a temperature of said semiconductor memory device.
15. The semiconductor memory device according to claim 14, wherein said refresh cycle adjusting circuit includes a cell leak monitor.
16. The semiconductor memory device according to claim 14, further comprising a second circuit for retaining refresh cycle information,
wherein said original refresh cycle at the time of the change from said normal operation mode to said self refresh mode is determined on the basis of said refresh cycle information stored in the second circuit.
17. The semiconductor memory device according to claim 14, wherein said first circuit is a coder or decoder.
18. The semiconductor memory device according to claim 14, wherein said first circuit is an ECC circuit.
19. A semiconductor memory device having a plurality of memory cells to be refreshed, comprising:
a first circuit for generating first information on the basis of information held in said plurality of memory cells when said semiconductor memory device changes from a normal operation period in which reading or writing is performed to a refresh period in which refresh is made in a refresh cycle and detecting and correcting an error in the information on the basis of the information stored in said plurality of memory cells and said first information when said semiconductor memory device changes from said refresh period to said normal operation period; and
a voltage generating circuit,
wherein the operation of said voltage generating circuit is stopped in a part of said refresh period.
20. A semiconductor memory device having a plurality of memory cells to be refreshed for retaining data, comprising:
a circuit for generating additional information on the basis of information stored in said plurality of memory cells when said semiconductor memory device changes from a normal operation period in which reading or writing is performed to a refresh period in which refresh is made in a refresh cycle and detecting and correcting an error in the information stored in said plurality of memory cells on the basis of the information stored in said plurality of memory cells and said additional information when said semiconductor memory device changes from said refresh period to said normal operation period; and
a voltage generating circuit,
wherein the operation of the voltage generating circuit is stopped at least in a part of said refresh period and a period in which said plurality of memory cells are not accessed.
21. The semiconductor memory device according to claim 20, wherein the circuit for detecting and correcting an error in the information held in said plurality of memory cells is a coderdecoder.
22. The semiconductor memory device according to claim 20, wherein the circuit for detecting and correcting an error in the information stored in said plurality of memory cells is an ECC circuit.
23. The semiconductor memory device according to claim 20, wherein said voltage generating circuit is a booster.
24. The semiconductor memory device according to claim 20, wherein said voltage generating circuit is a voltage step-down circuit.
25. The semiconductor memory device according to claim 20, wherein said voltage generating circuit intermittently operates in said refresh cycle in said refresh period.
26. The semiconductor memory device according to claim 20, wherein said refresh period is a self refresh mode period.
27. The semiconductor memory device according to any one of claims 6, 11, 14, 19, and 20, wherein said plurality of memory cells are dynamic memory cells.
28. The semiconductor memory device according to any one of claims 6, 11, 14, 19, 20, and 27, wherein said semiconductor memory device is formed on a single semiconductor substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A compound of compound of formula I:
51
wherein:
Z is a carbon or nitrogen atom;
52
is a 4 to 7-membered azaheterocyclyl or a 4 to 7-membered azaheterocyclenyl group;
53
is a single or double bond, provided that when Z is a nitrogen atom, then is a single bond;
54
is an aryl group, a monocyclic heteroaryl group, or a bicyclic azaheteroaryl group which includes a first proximal ring that is attached to the
55
moiety and a ring distal to said first ring, said distal ring including at least one nitrogen atom;
R1 is hydrogen, CH2OR12, CH2SR12, CO2R13, C(O)R13, or CONR13R13;
R2 is hydrogen, alkyl, aralkyl, aralkenyl, aralkynyl, heteroaralkyl, heteroaralkenyl, heteroaralkynyl, hydroxy, hydroxyalkyl, alkoxy, aryloxy, aralkoxy, acyl, aroyl, halo, nitro, cyano, carboxy, alkoxycarbonyl, aryloxycarbonyl, aralkoxycarbonyl, alkylsulfonyl, arylsulfonyl, heteroarylsulfonyl, alkylsulfinyl, arylsulfinyl, heteroarylsulfinyl, alkylthio, arylthio, heteroarylthio, aralkylthio, heteroaralkylthio, Y1Y2N, Y1Y2N-alkyl-, Y1Y2NCO or Y1Y2NSO2;
R3 is cycloalkyl, cycloalkenyl, heterocyclyl, heterocyclenyl, fused arylcycloalkyl, fused heteroarylcycloalkyl, fused arylcycloalkenyl, fused heteroarylcycloalkenyl, fused arylheterocyclyl, fused heteroarylheterocyclyl, fused arylheterocyclenyl, fused heteroarylheterocyclenyl, aryl, fused cycloalkenylaryl, fused cycloalkylaryl, fused heterocyclylaryl, fused heterocyclenylaryl, heteroaryl, fused cycloalkylheteroaryl, fused cycloalkenylheteroaryl, fused heterocyclenylheteroaryl, fused heterocyclylheteroaryl;
Xa, Xb, Xc are independently selected from hydrogen, R4R5N, (hydroxy)HN, (alkoxy)HN, R6O, R4R5NCO, R4R5NSO2, R6CO, halo, cyano, nitro R7(O)C(CH2)q and
56
and when
57
is a bicyclic heteroaryl group, then Xc is a substituent that is at the alpha position with respect to a nitrogen atom of said distal ring of
58
and Xc is selected from the group consisting of H, hydroxy and H2N, (optionally substituted lower alkyl)HN (hydroxy)HN, and (alkoxy)HN;
R4 and R5 are independently H or optionally substituted lower alkyl, or one of R4 and R5 is H and the other of R4 and R5 is R7(O)CCH2 or lower acyl;
R6 is H, optionally substituted lower alkyl, lower acyl or R7(O)CCH2;
R7 is H, optionally substituted lower alkyl, alkoxy or hydroxy;
R8 and R9 taken together are NR10;
R10 is hydrogen, R11O2C, R11O, HO, cyano, R11CO, HCO, lower alkyl, nitro, or YlaY2aN;
R11 is alkyl, aralkyl, or heteroaralkyl;
R12 is hydrogen, lower alkyl, aryl(lower alkyl), heteroaryl(lower alkyl), lower acyl, aroyl, or heteraroyl;
R13 is hydrogen, lower alkyl;
Y1 and Y2 are independently hydrogen, alkyl, aryl, and aralkyl, or where the substituent is
Y1Y2N or Y1Y2N-alkyl- then one of Y1 and Y2 is acyl or aroyl and the other of Y1 and Y2 is hydrogen, alkyl, aryl, or aralkyl;
Y1a and Y2a are independently hydrogen or alkyl;
n is 1,2,3, or 4; or
a pharmaceutically acceptable salt thereof, an N-oxide thereof, a hydrate thereof or a solvate thereof.
2. A compound according to claim 1 wherein Z is a carbon atom.
3. A compound according to claim 1 wherein Z is a carbon atom;
59
is a 6-membered azaheterocyclyl or a 6-membered azaheterocyclenyl group; R1 is selected from the group consisting of hydrogen CH2OR12, CH2SR12, CO2R13, C(O)R13 and CONR13R13; R12 is hydrogen, lower alkyl, aryl(lower alkyl), or heteroaryl(lower alkyl); and R13 is hydrogen, or lower alkyl.
4. A compound according to claim 1 wherein Z is a carbon atom;
60
is a 6-membered azaheterocyclenyl group;
61
is a double bond; and R1 and R2 are hydrogen.
5. A compound according to claim 1 wherein Z is a carbon atom;
62
is a 6-membered azaheterocyclyl group; and R1 and R2 are hydrogen. A compound according to claim 1 wherein R3 is optionally substituted (phenyl substituted phenyl), optionally substituted (heteroaryl substituted phenyl), optionally substituted (phenyl substituted heteroaryl) or optionally substituted (heteroaryl substituted heteroaryl).
6. A compound according to claim 1 wherein
63
is aryl or a monocyclic heteroaryl group; and Xc is selected from the group consisting of, R4R5N, (hydroxy)HN, (alkoxy)HN, R6O, R4R5NCO, R4R5NSO1, R6CO, halo, cyano, nitro R7(O)C(CH2)q, and
64
7. A compound according to claim 1 wherein Xc is
65
is an aryl group, a monocyclic heteroaryl group.
8. A compound according to claim 1 wherein Xc is
66
and is in the meta position with respect to the to the position of attachment of the
67
moiety to the
68
moiety.
9. A compound according to claim 1 wherein
69
is a bicyclic azaheteroaryl group which includes a first proximal ring that is attached to the
70
moiety and a ring distal to said first ring; Xc is R4R5N, (hydroxy)HN, or (alkoxy)HN, and Xc is in the alpha position with respect to a nitrogen atom in said distal ring.
10. A compound according to claim 1, which is selected from the group consisting of
71
wherein R3 is selected from the group consisting of
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
11. A compound according to claim 1 selected from the group consisting of
3-1-4-(6-Oxo-1,6-dihydropyridine-3-yl)-benzoyl-1,2,3,6-tetrahydropyridin-4 ylbenzamidine;
3-1-4-(1-Oxypyridin-2-yl)-benzoyl-1,2,3,6-tetrahydropyridin-4 ylbenzamidine;
3-1-4-(1-Oxypyridin-4-yl)-benzoyl-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-4-(6-Oxo-1,6-dihydropyridine-3-yl)-benzoyl-piperidin-4-ylbenzamidine;
3-1-4-(1-Oxypyridin-4-yl)-benzoyl-piperidin-4-ylbenzamidine;
3-1-4-(1-Oxypyridin-2-yl)-benzoyl-piperidin-4-ylbenzamidine;
3-1-(4-Pyridine-2-yl-benzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-(4-Pyridin-3-yl-benzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-(4-Pyridin-4-yl-benzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-4-(5-Bromofuran-2-yl)-benzoyl-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-4-(5-Chlorothiophen-2-yl)-benzoyl-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-(4-Thiophen-2-yl-benzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-3-(5-Chlorothiophen-2-yl)-acryloyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-(4-2-(2-Dimethylaminoethyl)methylaminopyrimidin-4-ylbenzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-(1-4-2-(2-Dimethylaminoethyl)-6-oxo-1,6-dihydropyridin-3-ylbenzoyl-1,2,3,6-tetrahydropyridin-4-yl)benzamidine;
3-1-(4-Pyrimidin-2-ylbenzoyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(4-Pyrazin-2-ylbenzoyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(4-Sulfamoylbiphenyl-4-carbonyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(3-Sulfamoylbiphenyl-4-carbonyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-4-(6-Methoxypyridazin-3-yl)benzoyl-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-4-(6-Oxo-1,6 dihydropyridazin-3-yl)benzoyl-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-4-(2-Aminopyrimidin-5-yl)benzoyl-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-4-(6-Methoxypyridin-3-yl)benzoyl-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(4-(Pyrimidin-5-ylbenzoyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(4-Pyridin-2-ylbenzoyl)-piperidin-4-ylbenzamidine;
3-1-(4-Pyridin-3-ylbenzoyl)-piperidin-4-ylbenzamidine;
3-1-(4-Pyridin-4-ylbenzoyl)-piperidin-4-ylbenzamidine;
3-1-4-(6-Methoxypyridin-3-yl)benzoyl-piperidin-4-ylbenzamidine;
3-1-4-(6-Methoxypyridazin-3-yl)benzoyl-piperidin-4-ylbenzamidine;
3-1-4-(6-Oxo-1,6-dihydropyridazin-3-yl)benzoyl-piperidin-4-ylbenzamidine;
5-4-4-(1-Aminoisoquinolin-7-yl)piperidine-1-carbonylphenyl-1H-pyridin-2-one;
5-4-(1-Aminoisoquinolin-7-yl)piperidine-1-carbonyl-1H-2,3bipyridinyl-6-one;
4-(1-Aminoisoquinolin-7-yl)piperidin-1-yl2-fluoro-4-(6-methoxypyridin-3-yl)phenylmethanone;
4-(1-Aminoisoquinolin-7-yl)piperidin-1-yl(2-fluoro-4-pyridin-3-ylphenyl)methanone;
4-4-(1-Aminoisoquinolin-7-yl)piperidine-1-carbonylbiphenyl-3-carboxylic acid amide;
4-(1-Aminoisoquinolin-7-yl)piperidin-1-yl5-(6-methoxypyridin-3-yl)thiophen-2-ylmethanone;
5-4-4-(1-Aminoisoquinolin-7-yl)piperidine-1-carbonyl-3-fluorophenyl-1H-pyridin-2-one;
5-5-4-(1-Aminoisoquinolin-7-yl)piperidine-1-carbonylthiophen-2-yl-1H-pyridin-2-one;
5-4-4-(1-Aminoisoquinolin-7-yl)-3,6-dihydro-2H-pyridine-1-carbonylphenyl-1H-pyridin-2-one;
4-(1-Aminoisoquinolin-7-yl)-3,6-dihydro-2H-pyridin-1-yl(4-pyridin-4-ylphenyl)methanone;
4-(1-Aminoisoquinolin-7-yl)piperidin-1-yl4-(6-methoxypyridin-3-yl)phenylmethanone;
4-(1-Aminoisoquinolin-7-yl)piperidin-1-yl(4-pyridin-3-ylphenyl)methanone;
4-(1-Aminoisoquinolin-7-yl)piperidin-1-yl(6-methoxy-2,3bipyridin-5-yl)methanone;
5-4-4-(4-Amino-1H-pyrrolo3,2-cpyridin-2-yl)piperidine-1-carbonylphenyl-1H-pyridin-2-one;
5-4-(4-Amino-1H-pyrrolo3,2-cpyridin-2-yl)piperidine-1-carbonyl-1H-2,3bipyridinyl-6-one;
3-1-(5-Phenylethyl-pyridine-3-carbonyl)-piperidin-4-yl-benzamidine;
3-1-(5-Phenylethynyl-pyridine-3-carbonyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(5-Phenylethynyl-pyridine-3-carbonyl)-piperidin-4-yl-benzamidine; and
3-4-(5-Phenylethyl-pyridine-3-carbonyl)-piperazin-1-yl-benzamidine.
12. A compound according to claim 1 wherein
Z is a nitrogen atom;
87
is a 6-membered azaheterocyclyl or a 6-membered azaheterocyclenyl group;
88
is a single bond; and R1 and R2 are hydrogen.
13. A compound according to claim 1 wherein
Z is a nitrogen atom;
89
is a 6-membered azaheterocyclyl or a 6-membered azaheterocyclenyl group;
90
is a single bond; and R1 is selected from the group consisting of hydrogen CH2OR12, CH2SR12, CO2R13, C(O)R13 and CONR13R13.
14. A compound according to claim 12 or 13 wherein
R3 is optionally substituted (phenyl substituted aralkyl), optionally substituted (heteroaryl substituted aralkyl), optionally substituted (phenyl substituted heteroaralkyl) or optionally substituted (heteroaryl substituted heteroaralkyl).
15. A compound according to claim 12 or 13 wherein R3 is optionally substituted (phenyl substituted aralkenyl), optionally substituted (heteroaryl substituted aralkenyl), optionally substituted (phenyl substituted heteroaralkenyl) or optionally substituted (heteroaryl substituted heteroaralkenyl).
16. A compound according to claim 12 or 13 wherein R3 is optionally substituted (phenyl substituted aralkynl), optionally substituted (heteroaryl substituted aralkynl), optionally substituted (phenyl substituted heteroaralkynl) or optionally substituted (heteroaryl substituted heteroaralkynl), (wherein the term optionally substituted before the term in the parenthesis, denote that the phenyl, heteroaryl, aralkynl, heteroaralkynl portions thereof could be further substituted as noted per their definitions).
17. A compound according to claim 1 selected from the group consisting of
3-1-(5-Phenylethyl-pyridine-3-carbonyl)-piperidin-4-yl-benzamidine;
3-1-(5-Phenylethynyl-pyridine-3-carbonyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(5-Phenylethynyl-pyridine-3-carbonyl)-piperidin-4-yl-benzamidine;
3-1-4-(6-Methoxypyridin-3-yl)benzoyl-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-(4-(Pyrimidin-5-ylbenzoyl)-1,2,3,6-tetrahydropyridin-4-yl-benzamidine;
3-1-4-(6-Methoxypyridazin-3-yl)benzoyl-piperidin-4-ylbenzamidine;
3-1-4-(1-Oxypyridin-2-yl)-benzoyl-piperidin-4-ylbenzamidine;
3-1-(4-Pyridine-2-yl-benzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-(4-Pyridin-4-yl-benzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-(4-2-(2-Dimethylaminoethyl)methylaminopyrimidin-4-ylbenzoyl)-1,2,3,6-tetrahydropyridin-4-ylbenzamidine; and
3-4-(5-Phenylethyl-pyridine-3-carbonyl)-piperazin-1-yl-benzamidine.
18. A compound according to claim 1 selected from the group consisting of
3-1-4-(1-Oxypyridin-4-yl)-benzoyl-1,2,3,6-tetrahydropyridin-4-ylbenzamidine;
3-1-4-(6-Oxo-1,6-dihydropyridine-3-yl)-benzoyl-piperidin-4-ylbenzamidine;
3-1-4-(1-Oxypyridin-4-yl)-benzoyl-piperidin-4-ylbenzamidine;
3-1-4-(6-Oxo-1,6-dihydropyridine-3-yl)-benzoyl-1,2,3,6-tetrahydropyridin-4ylbenzamidine;
3-1-4-(6-Oxo-1,6 dihydropyridazin-3-yl)benzoyl-1,2,3,6-tetrahydropyridin-4ylbenzamidine; and
3-1-4-(6-Oxo-1,6-dihydropyridazin-3-yl)benzoyl-piperidin-4-ylbenzamidine.
19. A method for treating a patient suffering from a disease state capable of being modulated by inhibiting tryptase activity comprising administering to said patient a pharmaceutically effective amount of a compound according to claim 1 or claim 17.
20. A method for preventing and treating an inflammatory diseases associated with tryptase activity comprising administering to said patient a pharmaceutically effective amount of a compound according to claim 1 or claim 17.
21. A method for preventing and treating late phase bronchoconstriction associated with chronic asthma comprising administering to said patient a pharmaceutically effective amount of a compound according to claim 1 or claim 17.
22. A method according to claim 19 wherein said disease state is selected from the group consisting of immunomediated inflammatory disorders associated with tryptase activity, such as rheumatoid arthritis, osteoarthritis, gouty arthritis, rheumatoid spondylitis, diseases of joint cartilage destruction, ocular conjunctivitis, vernal conjunctivis, inflammatory bowel disease, asthma, allergic rhinitis, and interstitial lung diseases.
23. A method according to claim 19 wherein said disease state is selected from the group consisting of fibrosis, sceleroderma, pulmonary fibrosis, liver cirrhosis, myocardial fibrosis, neurofibromas, hypertrophic scars, and various dermatological conditions, for example, atopic dermatitis and psoriasis.
24. A method according to claim 19 wherein said disease state is selected from the group consisting of myocardial infarction, stroke, angina and other consequences of atherosclerotic plaque rupture; as well as periodontal disease, diabetic retinopathy, tumor growth, anaphylaxis, multiple sclerosis, peptic ulcers, and syncytial viral infections.
25. A method of inhibiting tryptase activity comprising contacting a tryptase inhibitory amount of a compound of according to claim 1 or claim 17 with a composition containing tryptase.
26. A method of treating a patient suffering from a disease state capable of being modulated by inhibiting tryptase activity comprising administering to a patient, in need thereof, a compound according to claim 1 or claim 17 or a pharmaceutically acceptable salt thereof, and optionally at least one compound selected from the group consisting of a -adrenergic agonist compound, an anti-inflammatory corticosteroid compound, an anticholinergics compound, and an anti-inflammatory compound, or a pharmaceutically acceptable salt thereof, wherein said -adrenergic agonist compound is selected from the group consisting of albuterol, terbutaline, formoterol, fenoterol, and prenaline; said anti-inflammatory corticosteroid compound is selected from the group consisting of beclomethasone, triamcinolone, flurisolide, and dexamethasone; said anticholinergics compound is ipratropium bromide; and said anti-inflammatory compound is selected from the group consiting of sodium cromoglycate and nedocromil sodium.
27. A pharmaceutical composition comprising a pharmaceutically acceptable amount of the compound according to claim 1 and a pharmaceutically acceptable carrier.
28. A method for treating a patient suffering from a physiological condition capable of being modulated by inhibiting activity of Factor Xa comprising administering to said patient a pharmaceutically effective amount of the compound according to claim 2 or 18.
29. The method according to claim 28 wherein the physiological condition is venous vasculature, arterial vasculature, abnormal thrombus formation, acute myocardial infarction, unstable angina, thromboembolism, acute vessel closure associated with thrombolytic therapy, percutaneous transluminal coronary angioplasty, transient ischemic attacks, stroke, intermittent claudication or bypass grafting of the coronary or peripheral arteries, vessel luminal narrowing, restenosis post coronary or venous angioplasty, maintenance of vascular access patency in long-term hemodialysis patients, pathologic thrombus formation occurring in the veins of the lower extremities following abdominal, knee and hip surgery, a risk of pulmonary thromboembolism, or disseminated systemic intravascular coagulopathy occurring in vascular systems during septic shock, certain viral infections or cancer.
30. The method according to claim 28 wherein the physiological condition is abnormal thrombus formation, acute myocardial infarction, unstable angina, thromboembolism, acute vessel closure associated with thrombolytic therapy, transient ischemic attacks, intermittent claudication or bypass grafting of the coronary or peripheral arteries, restenosis post coronary or venous angioplasty, pathologic thrombus formation occurring in the veins of the lower extremities following abdominal, knee and hip surgery or a risk of pulmonary thromboembolism.
31. The method according to claim 28 wherein the physiological condition is stroke, vessel luminal narrowing, maintenance of vascular access patency in long-term hemodialysis patients, or disseminated systemic intravascular coagulopathy occurring in vascular systems during septic shock, certain viral infections or cancer.
32. A method of inhibiting Factor Xa comprising contacting a Factor Xa inhibitory amount of a compound according to claim 2 or claim 18 with a composition containing Factor Xa.
33. A method of inhibiting the formation of thrombin comprising contacting Factor Xa inhibitory amount of a compound according to claim 2 or claim 18 with a composition containing Factor Xa.
34. A method for treating a patient suffering from a physiological condition capable of being modulated by directly inhibiting activity of both Factor Xa and Factor IIa (thrombin) comprising administering to said patient a pharmaceutically effective amount of the compound according to claim 2 or claim 18.
35. A method of treating a patient suffering from a disease state capable of being modulated by inhibiting Factor Xa activity comprising administering to a patient, in need thereof, a compound according to claim 2 or claim 18 or a pharmaceutically acceptable salt thereof, and optionally at least one compound selected from the group consisting of a cardioprotective agent, a direct thrombin inhibitor, an anticoagulant, an antiplatelet agent or fibrinolytic agent.