1. A semiconductor device comprising:
a first switch;
a second switch;
a third switch;
a fourth switch;
a fifth switch;
a sixth switch;
a first capacitor;
a second capacitor;
a transistor; and
a load,
wherein one terminal of the first switch is electrically connected to a first wiring,
wherein the other terminal of the first switch is directly connected to one terminal of the second switch, one terminal of the second capacitor, and a gate of the transistor,
wherein the other terminal of the second switch is directly connected to one terminal of the third switch and one terminal of the first capacitor,
wherein the other terminal of the third switch is directly connected to the other terminal of the second capacitor and one terminal of the fourth switch,
wherein the other terminal of the fourth switch is directly connected to one of a source and a drain of the transistor and one terminal of the fifth switch,
wherein the other terminal of the fifth switch is directly connected to the other terminal of the first capacitor and one terminal of the sixth switch,
wherein the other terminal of the sixth switch is electrically connected to a fourth wiring,
wherein a first terminal of the load is electrically connected to the one terminal or the other terminal of the fifth switch,
wherein a second terminal of the load is electrically connected to a third wiring, and
wherein the other of the source and the drain of the transistor is electrically connected to a second wiring.
2. The semiconductor device according to claim 1, further comprising a seventh switch,
wherein one terminal of the seventh switch is electrically connected to the one terminal of the second capacitor, and
wherein the other terminal of the seventh switch is electrically connected to the other of the source and the drain of the transistor.
3. The semiconductor device according to claim 1,
wherein the third wiring and the fourth wiring are electrically connected to each other and are at the same potential.
4. The semiconductor device according to claim 1,
wherein the first wiring is supplied with a video signal,
wherein the second wiring is supplied with a first power supply voltage,
wherein the third wiring is supplied with a cathode voltage, and
wherein the fourth wiring is supplied with a second power supply voltage.
5. The semiconductor device according to claim 1,
wherein the transistor is an n-channel transistor.
6. The semiconductor device according to claim 1,
wherein the transistor includes an oxide semiconductor.
7. The semiconductor device according to claim 1,
wherein the first to sixth switches are transistors.
8. A display device comprising the semiconductor device according to claim 1,
wherein the load includes a light-emitting element.
9. A display module comprising the semiconductor device according to claim 1 and a touch panel or an FPC.
10. An electronic device comprising the semiconductor device according to claim 1 and a control switch, an antenna, or a sensor.
11. A method for driving a semiconductor device, the semiconductor device comprising:
a first switch, a second switch, a third switch, a fourth switch, a fifth switch, and a sixth switch;
a first capacitor and a second capacitor;
a transistor; and
a load,
wherein one terminal of the first switch is electrically connected to a first wiring,
wherein the other terminal of the first switch is directly connected to one terminal of the second switch, one terminal of the second capacitor, and a gate of the transistor,
wherein the other terminal of the second switch is directly connected to one terminal of the third switch and one terminal of the first capacitor,
wherein the other terminal of the third switch is directly connected to the other terminal of the second capacitor and one terminal of the fourth switch,
wherein the other terminal of the fourth switch is directly connected to one of a source and a drain of the transistor and one terminal of the fifth switch,
wherein the other terminal of the fifth switch is directly connected to the other terminal of the first capacitor, a first terminal of the load, and one terminal of the sixth switch,
wherein the other terminal of the sixth switch is connected to a fourth wiring,
wherein a second terminal of the load is electrically connected to a third wiring,
wherein the other of the source and the drain of the transistor is electrically connected to a second wiring,
the method for driving the semiconductor device comprising:
a first period, a second period, a third period, a fourth period, and a fifth period,
wherein the first period, the second period, the third period, the fourth period, and the fifth period are sequential with each other,
wherein, in the first period, the first switch is on, the second switch is turned on, the third switch is turned off, the fourth switch is turned on, the fifth switch is turned on, the sixth switch is turned on, so that the transistor is turned on and a first voltage is applied to the first capacitor and the second capacitor,
wherein, in the second period, the fifth switch is turned off so that the transistor is turned off and a second voltage is applied to the second capacitor,
wherein, in the third period, the first switch is turned off and the second switch is turned off so that the first capacitor holds the first voltage and the second capacitor holds the second voltage,
wherein, in the fourth period, the third switch is turned on and the fourth switch is turned off so that a sum of the first voltage of the first capacitor and the second voltage of the second capacitor is applied to the gate of the transistor, and
wherein, in the fifth period, the fifth switch is turned on and the sixth switch is turned off so that the transistor is turned on, a current flows through the load, and a sum of the first voltage, the second voltage, and a voltage applied to the load is applied to the gate of the transistor.
12. The method for driving a semiconductor device according to claim 11,
wherein the first wiring is supplied with a first potential,
wherein the fourth wiring is supplied with a second potential, and
wherein the first voltage is a difference between the first potential and the second potential.
13. The method for driving a semiconductor device according to claim 11,
wherein the second voltage is a threshold voltage of the transistor.
14. The method for driving a semiconductor device according to claim 11,
wherein the load includes a light-emitting element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A touch panel, wherein a component comprising an infrared (IR) material is disposed in the touch panel.
2. The touch panel of claim 1, wherein the component comprising the IR material is an IR layer made of the IR material.
3. The touch panel of claim 2, comprising a cover plate, a touch sense layer and a display unit layer,
wherein the IR layer is disposed between the cover plate and the touch sense layer; andor
the IR layer is disposed between the touch sense layer and the display unit layer.
4. The touch panel of claim 3, when the IR layer is disposed between the cover plate and the touch sense layer,
the IR layer is disposed on a surface of the touch sense layer that faces the cover plate; or
the IR layer is disposed on a surface of the cover plate that faces the touch sense layer.
5. The touch panel of claim 3, when the IR layer is disposed between the touch sense layer and the display unit layer,
the IR layer is disposed on a surface of the touch sense layer that faces the display unit layer; or
the IR layer is disposed on a surface of the display unit layer that faces the touch sense layer.
6. The touch panel of claim 2, further comprising an optical clear resin layer disposed between the IR layer and the touch sense layer.
7. The touch panel of claim 1, wherein the component comprising the IR material comprises at least one of the following components: a cover plate, a touch sense layer, and a display unit layer.
8. The touch panel of claim 7, wherein an IR layer made of the IR material is disposed on all or a part of the surface of the at least one of the cover plate, the touch sense layer, and the display unit layer.
9. The touch panel of claim 1, comprising a cover plate, a touch sense layer and a display unit layer, wherein at least one of which is made of a material containing an IR material.
10. The touch panel of claim 1, wherein the IR material is a mixture of one or more of biochar, tourmaline, far-infrared ceramic, jade powder, aluminum oxide, copper(II) oxide, silver(I,III) oxide and silicon carbide.
11. The touch panel of claim 1, wherein a particle size of the IR material is in the order of a nanometer to a micrometer.
12. The touch panel of claim 1, wherein the IR material is surface modified so as to emit IR light when being irradiated.
13. A LCD device comprising a backlight module and the touch panel of claim 1.
14. A surface modification method for an IR material, comprising:
nanocrystallizing the IR material to obtain nanoparticles of the IR material;
modifying surface property of the nanocrystallized nanoparticles, such that the nanoparticles are compatible and have matching property with a corresponding structural layer of a liquid crystal cell and emit IR light when being irradiated by light.
15. The method of claim 14, wherein nanocrystallizing the IR material comprises grinding and dispersing the IR material to obtain a dispersion solution of the IR material with an average particle size of 1 nm to 200 nm.
16. The method of claim 15, wherein modifying surface property of the nanocrystallized nanoparticles comprises:
mixing the dispersion solution of the IR material with an organic solvent containing methyl methacrylate, styrene, maleimide, and then adding an azo-initiator solution into the mixture; and
after the reaction is finished, adding a cooling organic solvent to cool and stirring until resultant is cooled, then filtering and drying the resultant to obtain the surface modified IR material.
17. The method of claim 16, wherein the molar ratio between methyl methacrylate, styrene and maleimide is 1:1\u02dc2:1\u02dc2, the IR material weights 8\u02dc25% of the total mixture weight; and the azo-initiator solution is added drop by drop with a weight of 1\u02dc5% of total monomer weight.
18. The method of claim 16, wherein an environmental condition for modifying the surface property of the nanocrystallized nanoparticles has a temperature of 35\xb0 C.\u02dc60\xb0 C. and in a nitrogen atmosphere;
a reaction time is 30 minutes to 90 minutes;
a temperature of the cooling organic solvent is 5\xb0 C. to 10\xb0 C.;
cooling is performed till room temperature;
filtering is performed for three times; and
drying is performed for 5 minutes to 20 minutes at 70\xb0 C. to 100\xb0 C.
19. A touch panel, wherein a component comprising an infrared (IR) material is disposed in the touch panel, the IR material is obtained using the surface modification method of claim 14.