1. An integrated circuit comprising:
a pad;
a ground strip element comprising a set of ground strips, positioned below said pad;
a first conductive element coupled to said pad; and
at least two tiled layers, positioned below said first conductive element and positioned above said ground strip element.
2. The integrated circuit of claim 1, further comprising:
at least one conductor routed substantially beneath, and parallel to, a ground strip of said set of ground strips.
3. The integrated circuit of claim 2, wherein a ground strip width of said ground strip of said set of ground strips is at least equal to a conductor width of said at least one conductor.
4. The integrated circuit of claim 1, wherein said set of ground strips comprises three ground strips.
5. The integrated circuit of claim 4, wherein two of said three ground strips have an equal width and a third ground strip of said three ground strips has a width larger than that of said two ground strips.
6. An integrated circuit comprising:
a pad positioned in a ground shield cage, said ground shield cage having a bottom conductive ground element comprising a set of ground strips, at least one ground strip of said set of ground strips being along a signal routing path of said integrated circuit.
7. The integrated circuit of claim 6, wherein said ground shield cage further comprises:
a set of stacked conductive ground elements forming sidewalls.
8. The integrated circuit of claim 7, wherein said sidewalls of said ground shield cage are comprised of at least an inner wall and an outer wall wherein said inner wall is electrically coupled to said outer wall.
9. The integrated circuit of claim 8, further comprising a set of vias for electrically coupling each conductive ground element of said set of stacked conductive ground elements to a lower conductive ground element of said set of stacked conductive ground elements.
10. The integrated circuit of claim 8, further comprising:
a conductive element electrically coupled to said pad;
at least two tiled layers , positioned below said conductive element;
said bottom conductive ground element positioned below said at least two tiled layers; and
a conductor routing layer comprising at least one conductor having a conductor routed beneath, and parallel to, a ground strip of said set of ground strips.
11. The integrated circuit of claim 10, wherein said ground shield cage further comprises:
a second ground element below a top ground element and a third ground element below said second ground element, said second and third ground elements being positioned respectively parallel to a corresponding tiled layer of said at least two tiled layers.
12. The integrated circuit of claim 11, wherein said set of stacked conductive ground elements further comprises:
a fifth ground element, positioned parallel to said at least one conductor running along said signal routing path.
13. The integrated circuit of claim 7, wherein each sidewall of said sidewalls of said ground shield cage is comprised of a single wall.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and a first semiconductor device connected to each of the pixel electrodes; and
a sensor portion including at least a photoelectric conversion element and a second semiconductor device connected to the photoelectric conversion element, which are disposed on a same substrate as the display portion,
wherein light from a back surface of the substrate is received by the sensor portion.
2. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and a first semiconductor device connected to each of the pixel electrodes; and
a sensor portion including at least a photoelectric conversion element and a second semiconductor device connected to the photoelectric conversion element, which are disposed as the same substrate as the display portion,
wherein the display portion and the sensor portion have a same pixel size; and
light from a back surface of the substrate is received by the sensor portion.
3. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and a first semiconductor device connected to each of the pixel electrodes; and
a sensor portion including at least a photoelectric conversion element and a second semiconductor device connected to the photoelectric conversion element, which are disposed on a same substrate as the display portion,
wherein the first semiconductor device and the second semiconductor device are provided in a same matrix; and
the pixel electrode connected to the first semiconductor device exists over the second semiconductor device.
4. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and a first semiconductor device connected to each of the pixel electrodes; and
a sensor portion including at least a photoelectric conversion element and a second semiconductor device connected to the photoelectric conversion element, which are disposed on a same substrate as the display portion,
wherein the photoelectric conversion element includes at least an upper electrode, a photoelectric conversion layer, and a lower electrode;
the upper electrode is made of a metal having reflectivity to at least visible light; and
the lower electrode is made of a transparent conductive film.
5. A method of manufacturing an integral-type liquid crystal display panel with an image sensor function which comprises a pixel matrix including pixel electrodes disposed in matrix and a first semiconductor device connected to each of the pixel electrodes, and an image sensor with a light receiving portion including a photoelectric conversion element and a second semiconductor device connected to the photoelectric conversion element, the image sensor being disposed on the same substrate as the pixel matrix, and the method comprising:
a first step of forming the first semiconductor device and the second semiconductor device on the substrate;
a second step of forming a lower electrode connected to the second semiconductor device and made of a transparent conductive film;
a third step of forming a photoelectric conversion layer on the lower electrode; and
a fourth step of forming an upper electrode contacting on the photoelectric conversion layer.
6. A method of manufacturing an integral-type liquid crystal display panel with an image sensor function which comprises a pixel matrix including pixel electrodes disposed in matrix and a first semiconductor device connected to each of the pixel electrodes, and an image sensor with a light receiving portion including a photoelectric conversion element and a second semiconductor device connected to the photoelectric conversion element, which are disposed on the same substrate as the pixel matrix, and the method comprising:
a first step of forming the first semiconductor device and the second semiconductor device on the substrate;
a second step of forming a first insulating film covering at least the first semiconductor device and the second semiconductor device;
a third step of forming a transparent conductive film on the first insulating film;
a fourth step of forming a lower electrode connected to the second semiconductor device by patterning the transparent conductive film;
a fifth step of forming a photoelectric conversion layer on the lower electrode; and
a sixth step of forming an upper electrode contacting on the photoelectric conversion layer.
7. An integral-type liquid crystal panel, comprising:
a photoelectric conversion element including a lower electrode, a photoelectric conversion layer disposed on the lower electrode, and an upper electrode disposed on the photoelectric conversion layer; and
a sensor portion including at least one active element connected to the photoelectric conversion element and being disposed on an insulating substrate; wherein:
the upper electrode is made of a metal having reflectivity to at least visible light; and
the lower electrode is made of a conductive film having transparency to at least visible light.
8. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and an active element connected to each of the pixel electrodes; and
a sensor portion including at least a photoelectric conversion element and an active element group connected to each of the photoelectric conversion element, the sensor portion being disposed on a same substrate as the display portion,
wherein light from a back surface of the substrate is received by the sensor portion.
9. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and an active element connected to each of the pixel electrodes; and
a sensor portion including at least a photoelectric conversion element and an active element group connected to the photoelectric conversion element, which are disposed on a same substrate as the display portion, wherein:
the display portion and the sensor portion have a same pixel size; and
light from a back surface of the substrate is received by the sensor portion.
10. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and an active element connected to each of the pixel electrodes; and
a sensor portion including a photoelectric conversion element and an active element group connected to the photoelectric conversion element, which are disposed on a same substrate as the display portion, wherein:
the active element and the active element group are provided in a same matrix; and
the pixel electrode connected to the active element exists over the active element group.
11. An integral-type liquid crystal display panel with an image sensor function, comprising:
a display portion made of a pixel matrix including at least pixel electrodes in matrix and an active element connected to each of the pixel electrodes; and
a sensor portion including at least a photoelectric conversion element and an active element group connected to the photoelectric conversion element, which are disposed on a same substrate as the display portion; wherein:
the photoelectric conversion element includes at least an upper electrode, a photoelectric conversion layer, and a lower electrode;
the upper electrode is made of a metal having reflectivity to at least visible light; and
the lower electrode is made of a transparent conductive film.
12. An integral-type liquid crystal display panel with an image sensor function according to any one of claims 8 to 11, wherein the active element group includes at least an amplification transistor, a reset transistor, and a selection transistor.
13. A method of manufacturing an integral-type liquid crystal display panel with an image sensor function which comprises a pixel matrix including pixel electrodes disposed in matrix and an active element group connected to the pixel electrodes, and an image sensor with a light receiving portion including a photoelectric conversion element and an active element group connected to the photoelectric conversion element, the image sensor being disposed on the same substrate as the pixel matrix, and the method comprising:
a first step of forming the active element and the active element group on the substrate;
a second step of forming a lower electrode connected to the active element group and made of a -transparent conductive film;
a third step of forming a photoelectric conversion layer on the lower electrode; and
a fourth step of forming an upper electrode contacting on the photoelectric conversion layer.
14. A method of manufacturing an integral-type liquid crystal display panel with an image sensor function which comprises a pixel matrix including pixel electrodes disposed in matrix and an active element connected to each of the pixel electrodes, and an image sensor with a light receiving portion including a photoelectric conversion element and an active element group connected to the photoelectric conversion element, the image sensor being disposed on the same substrate as the pixel matrix, and the method comprising:
a first step of forming the active element and the active element group on the substrate;
a second step of forming a first insulating film covering at least the active element and the active element group;
a third step of forming a transparent conductive film on the first insulating film;
a fourth step of forming a lower electrode connected to the active element group by patterning the transparent conductive film;
a fifth step of forming a photoelectric conversion layer on the lower electrode; and
a sixth step of forming an upper electrode contacting on the photoelectric conversion layer.
15. A method of manufacturing an integral-type liquid crystal display panel with an image sensor function according to claim 13 or 14, wherein the active element group includes at least an amplification transistor, a reset transistor, and a selection transistor.