1. An electron beam apparatus, comprising:
an electron source including an electron-emitting device;
an electron beam irradiation member which is opposed to the electron source and irradiated with an electron emitted from the electron-emitting device;
a potential specifying plate which is located between the electron source and the electron beam irradiation member and which includes a plurality of openings through which the electron emitted from the electron-emitting device transmits; and
a spacer located between the electron beam irradiation member and the potential specifying plate,
wherein D1 defined as a distance between a portion of the potential specifying plate between one opening, of the plurality of openings of the potential specifying plate, near the spacer and the spacer and the electron beam irradiation member, and D2 defined as a distance between a portion of the potential specifying plate between the one opening of the potential specifying plate near the spacer and another opening of the plurality of openings of the potential specifying plate not near the spacer and the electron beam irradiation member, meet a relationship D1<D2.
2. An electron beam apparatus, comprising:
an electron source including an electron-emitting device;
an electron beam irradiation member which is opposed to the electron source and irradiated with an electron emitted from the electron-emitting device;
a potential specifying plate which is located between the electron source and the electron beam irradiation member and which includes a plurality of openings through which the electron emitted from the electron-emitting device transmits; and
a spacer located between the electron source and the potential specifying plate,
wherein D3 defined as a distance between a portion of the potential specifying plate between one opening, of the plurality of openings of the potential specifying plate, near the spacer and the spacer and the electron-emitting devices, and D4 defined as a distance between a portion of the potential specifying plate between the one opening of the potential specifying plate near the spacer and another opening of the plurality of openings of the potential specifying plate not near the spacer and the electron-emitting device, meet a relationship D3<D4.
3. An electron beam apparatus according to claim 1, wherein a thickness of the portion of the potential specifying plate between the one opening of the potential specifying plate near the spacer and the spacer is larger than a thickness of the portion of the potential specifying plate between the one opening of the potential specifying plate near the spacer and another opening of the plurality of openings of the potential specifying plate, not near the spacer.
4. An electron beam apparatus according to claim 2, wherein a thickness of the portion of the potential specifying plate near the spacer and the another opening of the potential specifying plate not near the spacer is larger than a thickness of the portion of the potential specifying plate between the one opening of the plurality of openings of the potential specifying plate near the spacer and the spacer.
5. An electron beam apparatus according to claim 1, wherein the potential specifying plate has, between the one opening near the spacer and the spacer, a protrusion protruding toward a side of the electron beam irradiation member.
6. An electron beam apparatus according to claim 2, wherein the potential specifying plate has, between the opening near the spacer and the another opening not near the spacer, a protrusion protruding toward a side of the electron beam irradiation member.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An optically transparent and electrically conductive single walled carbon nanotube (SWNT) film, comprising a plurality of single walled carbon nanotubes (SWNTs), wherein said film has uniform nanotube density across said film’s area with said nanotube’s surfaces being free of residual stabilizing agents allowing intimate electrical contact between said nanotubes throughout said film, and said film is less than 1,000 nm thick, and wherein at a thickness of 100 nm said film has sufficient interpenetration to provide a 25\xb0 C. sheet resistance of less than 200 ohmsq and at least 20% optical transmission throughout a wavelength range from 0.4 \u03bcm to 5 \u03bcm.
2. The SWNT film of claim 1, wherein a morphology of said film comprises stacked planes, said SWNTs having random orientation in said planes.
3. The SWNT film of claim 1, wherein said optical transmission is at least 30%.
4. The SWNT film of claim 1, wherein SWNTs include at least one dopant, wherein for said 100 nm thick film said sheet resistance is <50 ohmsquare.
5. The SWNT film of claim 4, wherein said dopant is selected from the group consisting of halogens and graphite intercalants.
6. The SWNT film of claim 1, wherein said film consists essentially of said SWNTs, wherein said SWNTs comprise more than 99% by weight of said film.
7. An optically transparent and electrically conductive single walled carbon nanotube (SWNT) film, comprising a plurality of single walled carbon nanotubes (SWNTs), wherein said film has uniform nanotube density across said film’s area with said nanotube’s surfaces being free of residual stabilizing agents allowing intimate electrical contact between said nanotubes throughout said film, and wherein at a thickness of 50 nm said film provides a 25\xb0 C. sheet resistance of \u226660 ohmsquare and at least 70% optical transmission throughout a wavelength range from 0.4 \u03bcm to 0.75 \u03bcm.
8. The SWNT film of claim 7, wherein SWNTs include at least one dopant.
9. The SWNT film of claim 8, wherein said dopant is selected from the group consisting of halogens and graphite intercalants.
10. An optically transparent and electrically conductive single walled carbon nanotube (SWNT) film, comprising a plurality of single walled carbon nanotubes (SWNTs), wherein said film has uniform nanotube density across said film’s area with said nanotube’s surfaces being free of residual stabilizing agents allowing intimate electrical contact between said nanotubes throughout said film, and said film is less than 1,000 nm thick, and wherein at a thickness of 100 nm said film has sufficient interpenetration to provide a 25\xb0 C. sheet resistance of less than 200 ohmsq and at least 20% optical transmission throughout a wavelength range from 0.4 \u03bcm to 5 \u03bcm, and wherein said SWNT film is capable of being placed in intimate contact with a second surface wherein said second surface can be viewed through said SWNT film.