1. A method of producing an \u03b1-FeR2TM14B-type nanocomposite magnet where R is 9 at. % or more but less than 11.76 at. % of Nd or Pr, TM is Fe or a substance in which a portion of Fe is substituted with Co of 20 at. % or less, and B is 6 to 8 at. %, wherein a relatively long length nanocrystalline ribbon having a coercivity of 600 kAm or more in which a content of relatively short ribbon of less than 10 mm in length is 20% or less is coated with a polymeric film and then cut into an intended length, or punched into a specific shape.
2. The method of producing an \u03b1-FeR2TM14B-type nanocomposite magnet according to claim 1, wherein the nanocrystalline ribbon is produced by rapidly solidifying at a roller surface contact distance of 10 to 15 mm from a puddle of an R-TM-B-type molten alloy of 1300\xb0 C. or more formed in a vertical direction of a copper single roller with a diameter of 500 mm or more whose surface moves at a circumferential velocity of 14 to 15 msec in an argon gas atmosphere of 50 to 90 kPa.
3. The method of producing an \u03b1-FeR2TM14B-type nanocomposite magnet according to claim 2, wherein an angle formed by a circumferential direction tangent line that contacts the roller at the center of the puddle and a chord of a contact curve drawn by the ribbon from the puddle to a separation point is 1.7\xb0 or less.
4. The method of producing an \u03b1-FeR2TM14B-type nanocomposite magnet according to claim 1, wherein a distortion rate of a magnetic torque curve in an external magnetic field of 40 kAm of a circular plate of the nanocrystalline ribbon that is magnetized in an in-plane direction at 2.4 MAm or more is 1.2% or less.
5. The method of producing an \u03b1-FeR2TM14B-type nanocomposite magnet according to claim 2, wherein the nanocrystalline ribbon that flies is collected with a flat chute.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system for supercritical processing of an object, the system comprising:
a. means for performing a supercritical process;
b. means for measuring a pump performance parameter; and
c. means for adjusting operation of a pump to control a fluid flow in response to the pump performance parameter,
wherein the means for performing a supercritical process comprises
a processing chamber and
means for circulating at least one of a gaseous, liquid, supercritical and near-supercritical fluid within the processing chamber.
2. The system of claim 1 wherein the object is a semiconductor wafer for forming integrated circuits.
3. The system of claim 1 wherein the means for circulating is a means for circulating a fluid comprising carbon dioxide.
4. The system of claim 3 wherein at least one of solvents, co-solvents and surfactants are contained in the carbon dioxide.
5. The system of claim 1 wherein the pump performance parameter comprises at least one of a pump speed, voltage, electric current, and electric power.
6. The system of claim 1 further comprising means for delivering the fluid flow to the means for performing a supercritical process.