1. A method for fabricating ICs from a semiconductor wafer, the method comprising:
obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the semiconductor wafer;
modeling a process variable of the process as a function of the low resolution metrology data to generate a low-resolution process model;
modeling the process variable as a function of the high resolution metrology data to generate a high-resolution process model;
calibrating the low resolution process model;
combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and
analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.
2. The method of claim 1 wherein the obtaining comprises measuring an oxide thickness prior to and subsequent to the process.
3. The method of claim 1 wherein the process comprises a chemicalmechanical polish (\u201cCMP\u201d) process.
4. The method of claim 1 wherein the low resolution metrology data comprises wafer mean depth.
5. The method of claim 1 wherein the high resolution metrology data comprises wafer depth profile.
6. The method of claim 1 wherein the modeling the process variable as a function of the low resolution metrology data comprises modeling a polish amount as a function of polish time t.
7. The method of claim 1 wherein the modeling the process variable as a function of the high resolution metrology data comprises modeling a polish amount as a function of pressure profile P1-Pn.
8. The method of claim 1 wherein the calibrating comprises determining, for each zone n, determining a polishing time t\u2032 corresponding to zone pressure Pn.
9. A system for fabricating ICs from a semiconductor wafer, the system comprising:
means for obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the semiconductor wafer;
means for generating a low resolution process model of a process variable of the process;
means for generating a high resolution process model of the process variable;
means for calibrating the low resolution process model;
means for generating a multi-resolution process model from the calibrated low resolution process model and the high resolution process model for modeling the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and
means for controlling performance of the process using a response of the multi-resolution process model and the low and high resolution metrology data.
10. The system of claim 9 wherein the means for obtaining comprises measuring an oxide thickness prior to and subsequent to the process.
11. The system of claim 9 wherein the process comprises a chemicalmechanical polish (\u201cCMP\u201d) process.
12. The system of claim 11 wherein the low resolution metrology data comprises wafer mean depth and the high resolution metrology data comprises wafer depth profile.
13. The system of claim 9 wherein the means for generating the low resolution process model comprises modeling a polish amount as a function of polish time t.
14. The system of claim 9 wherein the means for generating the low resolution process model comprises modeling a polish amount as a function of pressure profile P1-Pn.
15. The system of claim 9 wherein the means for calibrating comprises means for determining, on a per-zone basis, a polishing time t\u2032 corresponding to zone pressure Pn.
16. A method for implementing a multi-resolution APC in a semiconductor fabrication process, the method comprising:
obtaining pre-process high and low resolution metrology data with regard to a process using a first metrology tool;
performing the process on a semiconductor wafer using a process tool;
obtaining post-process high and low resolution metrology data with regard to the process using a second metrology tool;
modeling a process variable of the process as a function of the pre- and post-process low resolution metrology data to generate a low-resolution process model;
modeling the process variable as a function of the pre- and post-process high resolution metrology data to generate a high-resolution process model;
calibrating the low resolution process model;
combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and
analyzing a response of the multi-resolution process model and the post-process low and high resolution metrology data to control performance of the process using an APC controller.
17. The method of claim 16 wherein the process comprises a chemicalmechanical polish (\u201cCMP\u201d) process.
18. The method of claim 16 wherein the low resolution metrology data comprises wafer mean depth and the high resolution metrology data comprises wafer depth profile.
19. The method of claim 16 wherein the modeling the process variable as a function of the low resolution metrology data comprises modeling a polish amount as a function of polish time t and wherein the modeling a process variable as a function of the high resolution metrology data comprises modeling a polish amount as a function of pressure profile P1-Pn.
20. The method of claim 16 wherein the calibrating comprises determining, for each zone n, determining a polishing time t\u2032 corresponding to zone pressure Pn.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A photosensitive compound having a structure selected from a group consisting of the following Formula 1a and Formula 1b,
wherein, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R\u2032 and R\u2033 are independently hydrocarbon group of 1 to 30 carbon atoms, and R\u2032\u2033 is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms;
wherein, n, x, z, R, R\u2032 R\u2033 and R\u2032\u2033 are the same defined as in Formula 1a, x\u2032 is 1, 2, 3 or 4, z\u2032 is 0, 1, 2 or 3, and p and m are independently 1 or 2,
wherein in Formula 1a and Formula 1b: i) carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of the R; or ii) n =1 and carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of R\u2032.
2. The photosensitive compound of claim 1, wherein R, R\u2032, R\u2033 and R\u2032\u2033 each is a chain type andor a ring type of aliphatic andor aromatic hydrocarbon group.
3. The photosensitive compound of claim 1, wherein the R\u2033 include an ether compound structure or an ester compound structure which includes oxygen(O) atom.
4. The photosensitive compound of claim 1, wherein the photosensitive compound is selected from a group consisting of compounds represented by the following Formulas 2b and 2d,
5. A photoresist composition comprising:
(a) 1 to 85 weight % of a photosensitive compound having a structure selected from a group consisting of the following Formula 1a and Formula 1b,
wherein, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R\u2032 and R\u2033 are independently hydrocarbon group of 1 to 30 carbon atoms, and R\u2032\u2033 is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms;
wherein, n, x, z, R, R\u2032 R\u2032\u2033 and R\u2032\u2033 are the same defined as in Formula 1a, x\u2032 is 1, 2, 3 or 4, z\u2032 is 0, 1, 2 or 3, and p and m are independently 1 or 2;
(b) 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and
(c) 10 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound,
wherein in Formula 1a and Formula 1b: i) carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of the R; or ii) n =1 and carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of R\u2032.
6. The photoresist composition of claim 5, further comprising 0.01 to 10 weight parts of a base compound with respect to 100 weight parts of the photosensitive compound, wherein, the base compound is selected from a group of consisting of tri-ethylamine, tri-iso-butylamine, tri-iso-octylamine, di-ethanolamine, tri-ethanolamine and mixture thereof.
7. A method for forming a photoresist pattern, comprising the step of:
a) coating a photoresist composition on a substrate to form a photoresist layer;
b) exposing the photoresist layer to a light;
c) heating the exposed photoresist layer; and
d) developing the heated photoresist layer to form the photoresist pattern,
wherein the photoresist composition comprises i) 1 to 85 weight % of a photosensitive compound having a structure selected from a group consisting of the following Formula 1a and Formula 1b,
wherein, n is 0 or 1, x is 1, 2, 3, 4 or 5, y is 2, 3, 4, 5 or 6, z is 0, 1, 2, 3 or 4, R, R\u2032 and R\u2033 are independently hydrocarbon group of 1 to 30 carbon atoms, and R\u2032\u2033 is a hydrogen atom or hydrocarbon group of 1 to 30 carbon atoms;
wherein, n, x, z, R, R\u2032 R\u2033 and R\u2032\u2033 are the same defined as in Formula 1a, x\u2032 is 1, 2, 3 or 4, z\u2032 is 0, 1, 2 or 3, and p and m are independently 1 or 2;
(ii) 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and
(iii) 10 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound,
wherein in Formula 1a and Formula 1b: i) carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of the R; or ii) n=1 and carbonyl(C\u2550O) groups or carboxyl(\u2014COO\u2014) groups are positioned at the both ends of R\u2032.