1. A method of operation of a mobile communication system comprising:
receiving a base carrier frequency signal for representing the base carrier frequency signal between a mobile device and a cell tower location;
generating a power spectral density from the base carrier frequency signal;
measuring a Rician K factor from the power spectral density;
estimating a line-of-sight frequency and a Doppler frequency based on the power spectral density according to the Rician K factor;
determining a movement for representing direction and speed of the mobile device relative to the cell tower location with a central processor unit based on the line-of-sight frequency, the Doppler frequency, and the Rician K factor; and
activating a handover decision handler based on the cell tower location and the movement.
2. The method as claimed in claim 1 wherein estimating the line-of-sight Doppler frequency includes estimating the line-of-sight Doppler frequency based on the power spectral density.
3. The method as claimed in claim 1 further comprising counting samples of the base carrier frequency signal with a channel tap for generation of the power spectral density.
4. The method as claimed in claim 1 wherein measuring the Rician K factor includes determining power magnitudes of the power spectral density.
5. The method as claimed in claim 1 further comprising estimating a line-of-sight frequency based on the power spectral density.
6. The method as claimed in claim 1 wherein determining the cell tower location includes determining a mobile intercept angle of the mobile device.
7. The method as claimed in claim 1 wherein determining the cell tower location includes determining a mobile speed of the mobile device.
8. A mobile communication system comprising:
an antenna for receiving a base carrier frequency signal for representing the base carrier frequency signal between a mobile device and a cell tower location;
a digital conditioner unit for generating a power spectral density from the base carrier frequency signal;
a digital signal processor for measuring a Rician K factor based on the power spectral density;
a finite state machine for estimating a line-of-sight frequency and a Doppler frequency based on the power spectral density according to the Rician K factor;
a central processor unit for determining a movement for representing direction and speed of the mobile device relative to the cell tower location based on the line-of-sight frequency, the Doppler frequency, and the Rician K factor; and
a device control unit for activating a handover decision based on the cell tower location and the movement.
9. The system as claimed in claim 8 wherein the finite state machine is estimating the line-of-sight Doppler frequency based on the power spectral density.
10. The system as claimed in claim 8 further comprising a signal bridge unit for counting samples of the base carrier frequency signal with a channel tap for generation of the power spectral density.
11. The system as claimed in claim 8 wherein the digital signal processor is determining power magnitudes of the power spectral density.
12. The system as claimed in claim 8 further comprising an analog to digital converter for estimating a line-of-sight frequency based on the power spectral density.
13. The system as claimed in claim 8 further comprising a radio frequency receiver for determining a mobile intercept angle of the mobile device.
14. The system as claimed in claim 8 further comprising a controller for determining a mobile speed of the mobile device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A capacitor formed by the method of:
forming an anode from a valve metal;
forming a dielectric layer on said anode to form a dielectric coated anode;
coating said dielectric coated anode with a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer;
providing terminations in electrical contact with said anode and said intrinsically conductive polymer; and wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.46.
2. The capacitor of claim 1 wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.54.
3. A capacitor formed by the method of:
forming an anode from a valve metal;
forming a dielectric layer on said anode to form a dielectric coated anode;
coating said dielectric coated anode with a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer;
providing terminations in electrical contact with said anode and said intrinsically conductive polymer; and wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has an anode with a volumetric efficiency of at least 555 \u03bcFcc.
4. The capacitor of claim 3 wherein said capacitor has an anode wherein the product of volumetric efficiency and break down voltage is at least 33,300 V\xb7\u03bcFcc.
5. A capacitor formed by the method of:
forming an anode from a valve metal;
forming a dielectric layer on said anode to form a dielectric coated anode;
coating said dielectric coated anode with a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer;
providing terminations in electrical contact with said anode and said intrinsically conductive polymer;
prior to said dipping processing said dielectric coated anode in at least one in-situ polymerization cycle wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.46.
6. A capacitor formed by the method of:
forming an anode from a valve metal;
forming a dielectric layer on said anode to form a dielectric coated anode;
coating said dielectric coated anode with a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer;
providing terminations in electrical contact with said anode and said intrinsically conductive polymer;
prior to said dipping processing said dielectric coated anode in at least one in-situ polymerization cycle wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.54.
7. A capacitor formed by the method of:
forming an anode from a valve metal;
forming a dielectric layer on said anode to form a dielectric coated anode;
coating said dielectric coated anode with a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer;
providing terminations in electrical contact with said anode and said intrinsically conductive polymer;
prior to said dipping processing said dielectric coated anode in at least one in-situ polymerization cycle wherein said capacitor has a breakdown voltage of at least 60V wherein said capacitor has an anode with a volumetric efficiency of at least 555 \u03bcFcc.
8. The capacitor of claim 7 wherein said capacitor has an anode wherein the product of volumetric efficiency and break down voltage is at least 33,300 V\xb7\u03bcFcc.
9. A capacitor formed by the method of:
forming an anode from a valve metal;
forming a dielectric layer on said anode to form a dielectric coated anode;
coating said dielectric coated anode with a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer; and
providing terminations in electrical contact with said anode and said intrinsically conductive polymer wherein said capacitor has a breakdown voltage from 60V to 120V wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.46.
10. The capacitor of claim 9 wherein said capacitor has a breakdown voltage to formation voltage ratio of at least 0.54.
11. A capacitor formed by the method of:
forming an anode from a valve metal;
forming a dielectric layer on said anode to form a dielectric coated anode;
coating said dielectric coated anode with a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer; and
providing terminations in electrical contact with said anode and said intrinsically conductive polymer wherein said capacitor has a breakdown voltage from 60V to 120V wherein said capacitor has an anode with a volumetric efficiency of at least 555 \u03bcFcc.
12. The capacitor of claim 11 wherein said capacitor has an anode wherein the product of volumetric efficiency and break down voltage is at least 33,300 V\xb7\u03bcFcc.
13. A capacitor formed by the method of:
forming an anode from a valve metal selected from tantalum and niobium;
forming a dielectric layer on said anode to form a dielectric coated anode;
dipping said dielectric coated anode into a slurry of intrinsically conductive polymer;
drying said intrinsically conductive polymer;
providing terminations in electrical contact with said anode and said intrinsically conductive polymer; and wherein said capacitor has a breakdown voltage of at least 60V, and a breakdown voltage to formation voltage ratio of at least 0.46 and said anode has a product of volumetric efficiency and break down voltage which is at least 33,300 V\xb7\u03bcFcc.
14. The capacitor of claim 13 wherein said breakdown voltage to formation voltage ratio is at least 0.54.