1. An organic light-emitting display apparatus, comprising:
a substrate;
a first passivation layer formed on the substrate;
at least one of color filters formed on the first passivation layer;
an overcoat layer that covers the color filter;
a second passivation layer that is formed on the first passivation layer and surrounds the overcoat layer;
a first electrode formed on the second passivation layer;
a second electrode facing the first electrode; and
an organic layer disposed between the first electrode and the second electrode.
2. The organic light-emitting display apparatus of claim 1, wherein the color filter is one of red, green, and blue color filters.
3. The organic light-emitting display apparatus of claim 1, further comprising a polarizing film on a surface of the substrate.
4. The organic light-emitting display apparatus of claim 1, further comprising a black matrix in which optical transmission regions and optical blocking regions are divided on the second passivation layer.
5. The organic light-emitting display apparatus of claim 1, further comprising a black matrix in which optical transmission regions and optical blocking regions are divided between the substrate and the first passivation layer.
6. The organic light-emitting display apparatus of claim 1, further comprising a pixel defining layer in which a pixel region and a non-pixel region are divided on the second passivation layer.
7. The organic light-emitting display apparatus of claim 1, wherein the color filter has a thickness in a range from about 1 \u03bcm to about 5 \u03bcm.
8. The organic light-emitting display apparatus of claim 1, wherein the overcoat layer has a thickness in a range from about 1 \u03bcm to about 10 \u03bcm.
9. The organic light-emitting display apparatus of claim 1, wherein the first and second passivation layers comprise a SiOx group layer or a SiNx group layer.
10. The organic light-emitting display apparatus of claim 1, wherein the second passivation layer has a thickness in a range from about 500 \u212b to about 10,000 \u212b.
11. A method of manufacturing an organic light-emitting display apparatus, the method comprising steps of:
providing a substrate;
forming a first passivation layer on the substrate;
forming at least one color filter on the first passivation layer;
forming an overcoat layer that covers the color filter;
forming a second passivation layer on the first passivation layer to surround the overcoat layer;
forming a first electrode on the second passivation layer;
forming an organic layer on the first electrode; and
forming a second electrode on the organic layer.
12. The method of claim 11, wherein
the forming of the first passivation layer on the substrate comprises forming the first passivation layer by using a SiOx group layer or a SiNx group layer, and
the forming of the second passivation layer on the first passivation layer comprises forming the first passivation layer by using a SiOx group layer or a SiNx group layer.
13. The method of claim 11, wherein the forming of the second passivation layer comprises forming the second passivation layer to have a thickness in a range from about 500 \u212b to about 10,000 \u212b.
14. The method of claim 11, wherein the forming of at least one color filter on the first passivation layer comprises forming the color filter to have a thickness in a range from about 1 \u03bcm to about 5 \u03bcm.
15. The method of claim 11, wherein the forming of the overcoat layer comprises forming the overcoat layer to have a thickness in a range from about 1 \u03bcm to about 10 \u03bcm.
16. The method of claim 11, further comprising forming a pixel defining layer in which a pixel region and a non-pixel region are divided on the second passivation layer between the forming of the first electrode and the forming of the organic layer.
17. The method of claim 11, after the forming of the second electrode on the organic layer, further comprising additionally forming a polarizing film on a surface of the substrate.
18. The method of claim 11, further comprising forming a black matrix in which optical transmission regins and optical blocking regions are divided on the second passivation layer between the forming of the second passivation layer and the forming of the first electrode on the second passivation layer.
19. The method of claim 11, further comprising forming a black matrix in which optical transmission regins and optical blocking regions are divided on the substrate between the forming of the substrate and the forming of the first passivation layer on the substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A filled skutterudite comprising a chemical composition of GyM4X12, where G comprises mischmetal as a source of guest atoms; wherein mischmetal comprises at least two rare earth elements and one or more non-rare earth impurities, y is a filling fraction of said guest atoms, M represents transition metal atoms, and X represents atoms from groups IVA-VIA of the periodic table.
2. The filled skutterudite of claim 1 wherein said chemical composition is MmyCo4Sb12 (0<y\u22661), where Mm is mischmetal.
3. The filled skutterudite of claim 1 wherein M is a transition metal selected from the group consisting of Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag and Au.
4. The filled skutterudite of claim 3 wherein M is Co, Rh or Ir.
5. The filled skutterudite of claim 4 wherein M is Co.
6. The filled skutterudite of claim 1 wherein X is an atom selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, O, S, Se, Te and Po.
7. The filled skutterudite of claim 6 wherein X is P, As or Sb.
8. The filled skutterudite of claim 7 wherein X is Sb.
9. A filled skutterudite comprising a chemical composition of GyM4X12, where G represents mischmetal alone or in combination with at least one rare earth element, as a source of guest atoms; wherein mischmetal comprises at least two rare earth elements and one or more non-rare earth impurities, y is a filling fraction of said guest atoms, M represents transition metal atoms, and X represents atoms from groups IVA-VIA of the periodic table.
10. The filled skutterudite of claim 9 wherein said rare earth element is a rare earth element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, and combinations of these atoms.
11. The filled skutterudite of claim 9 wherein M is a transition metal selected from the group consisting of Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag and Au.
12. The filled skutterudite of claim 11 wherein M is Co, Rh or Ir.
13. The filled skutterudite of claim 12 wherein M is Co.
14. The filled skutterudite of claim 9 wherein X is an atom selected from the group consisting of C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, O, S, Se, Te and Po.
15. The filled skutterudite of claim 14 wherein X is P, As or Sb.
16. The filled skutterudite of claim 15 wherein X is Sb.