1. An integrated circuit on a single chip, comprising:
a module for digital IQ generation;
a module for LO synthesis;
a digital mixing module;
a multi-stage filtering and decimation module;
a passband equalization module;
an integrate & dump module; and
a DC offset adjustment module.
2. The integrated circuit of claim 1, wherein filtering operations have fully programmable coefficients that are double-buffered to provide near instantaneous selection between a pair of coefficient sets and to allow a second set of coefficients to be loaded while a first set of coefficients are in use.
3. The integrated circuit of claim 1, comprising a plurality of electrical interfaces to allow the chip to be used with single-ended or differential signals at a plurality of voltage levels.
4. The integrated circuit of claim 1, configured to process intermediate frequency (IF) sampled signals from a single AD converter and to process baseband IQ samples from a receiver that employs analog IQ generation via an radio-frequency (RF) quadrature mixer and pair of AD converters.
5. An integrated circuit on a single chip, comprising:
input MUX means for providing front-end interface to the input signals and clock signals;
control Interface means for providing electrical interfaces to allow an external controller to reset the chip, load coefficients, configure the chip by enabling or disabling bypass setting on a plurality of functions, switch between at least two processing modes, switch between at least two AD inputs, and test the chip;
clock distribution means for accepting a selected input and distributing copies of the selected input throughout the chip, generating a utility clock signal (UTILCLK) output from the chip to be used by other external devices to synchronize to output data of the chip;
output MUX means for providing an electric interface to external circuits that receive signals from the chip, and selectively providing either single-ended or differential signals for all outputs; and
tuner filter means for accepting demuxed data from the input MUX means and performing digital tuning and filtering.
6. The integrated circuit of claim 5, wherein the tunable filter means provides at least one function from the group comprising Digital IQ (DIQ) Generation, DIQBaseband MUX, Coarse Time Delay, Fixed Decimation, Digital Tuning via Numerically Controlled Oscillator (NCO), Digital Mixer, Two-Stage FIR Filtering, IQ Balance, IQ Swap, and Complex Channel Equalization.
7. The integrated circuit of claim 5, wherein said output MUX means ouptuts IQ signals (Data-I, Data-Q), Data Valid (DVALID) and Last IPP (DV-LIPP) (delayed to match the IQ data delay), Saturation Bit (SAT-OUT) (delayed to align with the IQ data), Overflow Detection Bit (OVFLOW), Data Clock (DATACLK) at the same rate and synchronized with the output data, and Utility Clock UTILCLK).
8. A reconfigurable filter and decimate circuit, comprising:
a signal input;
an adder coupled having a plurality of signal inputs and a signal output;
means for demultiplexing a signal received into a plurality of sampled signals;
a plurality of FIR filters each having a number of taps; and
switching means for coupling said plurality of sampled signals with said plurality of FIR filters and with said plurality of signal inputs to said adder, and for decimating said input signal a number of times, and for each number of times, the output of said adder is filtered by the same number of taps.
9. The filter and decimate circuit as recited in claim 8, wherein said means for demultiplexing said signal separates said input signal into four signals comprising first and second odd sampled signals and first and second even sampled signals.
10. The filter and decimate circuit as recited in claim 8, wherein the number of taps in said FIR filters combines to be 36 taps, and each of said FIR filters comprise 3, 6 or 9 taps.
11. The filter and decimate circuit as recited in claim 9, wherein the number of taps in said FIR filters combines to be 36 taps, and each of said FIR filters comprise 3, 6 or 9 taps.
12. The integrated circuit as recited in claim 1, wherein said multi-stage filtering and decimation module includes a reconfigurable filter and decimate circuit, comprising:
a signal input;
an adder coupled having a plurality of signal inputs and a signal output;
means for demultiplexing a signal received into a plurality of sampled signals;
a plurality of FIR filters each having a number of taps; and
switching means for coupling said plurality of sampled signals with said plurality of FIR filters and with said plurality of signal inputs to said adder, and for decimating said input signal a number of times, and for each number of times, the output of said adder is filtered by the same number of taps.
13. The integrated circuit as recited in claim 5, wherein said tuner filter means includes a reconfigurable filter and decimate circuit, comprising:
a signal input;
an adder coupled having a plurality of signal inputs and a signal output;
means for demultiplexing a signal received into a plurality of sampled signals;
a plurality of FIR filters each having a number of taps; and
switching means for coupling said plurality of sampled signals with said plurality of FIR filters and with said plurality of signal inputs to said adder, and for decimating said input signal a number of times, and for each number of times, the output of said adder is filtered by the same number of taps.
14. A fast FIR filter comprising:
a demultiplexer configured to receive an input signal and to separate the signal into a plurality of signals;
filter means for filtering the plurality of signals and outputting a plurality of filtered signals; and
a multiplexer for combing the plurality of filtered signals into a single output signal;
wherein said filter means processes each said plurality of signals at a rate a plurality of times slower than the input rate of said input signal without decimation of said input signal and without loss of bandwidth of said input signal.
15. The fast FIR filter as recited in claim 14, wherein said input signal has a data rate of 4R, said demultiplexer splits said input signal into four signals, said filter means processes each of said four signals at a data rate of R, and said single output signal has a data rate of 4R.
16. The integrated circuit as recited in claim 1, wherein said multi-stage filtering and decimation module includes a fast FIR filter comprising:
a demultiplexer configured to receive an input signal and to separate the signal into a plurality of signals;
filter means for filtering the plurality of signals and outputting a plurality of filtered signals; and
a multiplexer for combing the plurality of filtered signals into a single output signal;
wherein said filter means processes each said plurality of signals at a rate a plurality of times slower than the input rate of said input signal without decimation of said input signal and without loss of bandwidth of said input signal.
17. The fast FIR filter as recited in claim 14, further comprising splitting circuitry for splitting said plurality of signals into a plurality of groups of signals; said filter means includes, for each of groups of signals being filtered, a group of filters.
18. The fast FIR filter as recited in claim 17, wherein said demultiplexer splits said input signal into first, second, third and fourth input signals; and
wherein said plurality of groups of signals includes first, second, third and fourth groups, and each of said groups includes first, second, third and fourth signals corresponding respectively to said first, second, third and fourth input signals; and
wherein for each group of signals, said first, second, third and fourth signals are filtered by one of first, second, third and fourth FIR filters, the output of the filters is combined into a single filtered signal for each group and input into said multiplexer.
19. The fast FIR filter of claim 18, wherein for said first group, said first signal is filtered by said first filter, said second signal is filtered by said second filter, said third signal is filtered by said third filter, and said fourth signal is filtered by said fourth filter; and
wherein for said second group, said first signal is filtered by said fourth filter, said second signal is filtered by said first filter, said third signal is filtered by said second filter, and said fourth signal is filtered by said third filter; and
wherein for said third group, said first signal is filtered by said third filter, said second signal is filtered by said fourth filter, said third signal is filtered by said first filter, and said fourth signal is filtered by said second filter; and
wherein for said fourth group, said first signal is filtered by said second filter, said second signal is filtered by said third filter, said third signal is filtered by said second filter, and said fourth signal is filtered by said first filter.
20. The fast FIR filter of claim 19, further comprising delay means for delaying some of said filtered signals in order to generate a homogenous filtered output signal.
21. A digital IQ signal generation circuit, comprising:
demultiplexing means for separating a real input signal into first, second, third and fourth signals;
inverter means for inverting said third and fourth signals;
low pass FIR filter means for filtering said first, second, third and fourth signals; and
multiplexing means for combining the filtered first and third signals and for combining said second and fourth signals, in order to generate I and Q sampled signals at one half an input data rate of said real input signal; wherein
said low pass FIR filter means processes signals at one quarter the input data rate of said real input signal.
22. The integrated circuit as recited in claim 1, wherein said module for digital IQ generation includes a fast FIR filter comprising:
a demultiplexer configured to receive an input signal and to separate the signal into a plurality of signals;
filter means for filtering the plurality of signals and outputting a plurality of filtered signals; and
a multiplexer for combing the plurality of filtered signals into a single output signal;
wherein said filter means processes each said plurality of signals at a rate a plurality of times slower than the input rate of said input signal without decimation of said input signal and without loss of bandwidth of said input signal.
23. The integrated circuit of claim 1, wherein each function includes a bypass mode that effectively disables the function to conserve power in applications where one or more functions are not required.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method for manufacturing a trench capacitor, the method which comprises:
(a) providing a substrate;
(b) forming a trench with a lower region and an upper region in the substrate;
(c) filling the lower region of the trench with a first filler material;
(d) forming an insulation collar in the upper region of the trench;
(e) removing the first filler material from the lower region of the trench;
(f) forming a buried plate as a first capacitor plate in the substrate such that the buried plate is disposed adjacent to the lower region of the trench and using a low-pressure gas phase doping for forming the buried plate;
(g) forming a dielectric layer as a capacitor dielectric lining the lower region of the trench and an inner side of the insulation collar; and
(h) filling the trench with a conductive second filler material as a second capacitor plate.
2. The method according to claim 1, which comprises forming the buried plate in step (f) by using a pressure between 66 Pascal and 200 Pascal for the low-pressure gas phase doping.
3. The method according to claim 1, which comprises forming the buried plate in step (f) at a temperature between 750 C. and 1050 C.
4. The method according to claim 1 which comprises forming the buried plate in step (f) by using a doping gas selected from the group consisting of AsH3 and PH3 and by using a carrier gas selected from the group consisting of H2 and He.
5. The method according to claim 1, which comprises forming the dielectric layer in step (g) and forming the buried plate in step (f) at substantially identical pressures and substantially identical temperatures.
6. The method according to claim 1, which comprises forming the dielectric layer in step (g) and forming the buried plate in step (f) at a pressure between 66 Pascal and 200 Pascal and a temperature between 750 C. and 1050 C.
7. The method according to claim 1, which comprises forming the dielectric layer by using a prenitridization step and a main nitridization step.
8. The method according to claim 7, which comprises carrying out the prenitridization step at a temperature of substantially 950 C. and a pressure of substantially 800 Pascal and by using NH3 for the prenitridization step.
9. The method according to claim 7, which comprises carrying out the main nitridization step at a temperature of substantially between 700 C. and 800 C. and a pressure between 26.6 Pascal and 46.7 Pascal and by using NH3 together with a compound selected from the group consisting of SiCl2H2 and SiH4 for the main nitridization step.
10. The method according to claim 1, which comprises forming the buried plate self-aligned with respect to the insulating collar.
11. The method according to claim 1, which comprises forming, from a third, conductive filler material, a bridge above the insulating collar on the conductive, second filler material for forming a buried contact to the substrate.
12. The method according to claim 1, which comprises forming an etch stop layer on walls of the trench such that the etch stop layer is disposed under the first filler material.
13. The method according to claim 1, which comprises widening the lower region of the trench with respect to the upper region of the trench for forming a bottle shaped trench.
14. A method for manufacturing a trench capacitor, the method which comprises:
(a) providing a substrate;
(b) forming a trench with a lower region and an upper region in the substrate;
(c) filling the lower region of the trench with a first filler material;
(d) forming an insulation collar in the upper region of the trench;
(e) removing the first filler material from the lower region of the trench;
(f) forming a buried plate as a first capacitor plate in the substrate such that the buried plate is disposed adjacent to the lower region of the trench and using a gas phase doping at a pressure below 200 Pascal for forming the buried plate;
(g) forming a dielectric layer as a capacitor dielectric lining the lower region of the trench and an inner side of the insulation collar; and
(h) filling the trench with a conductive second filler material as a second capacitor plate.