1. A method of forming a pattern of a semiconductor device, the method comprising:
forming a first hard mask film, a first resist film, and a second hard mask film over an underlying layer of a semiconductor substrate;
forming a second resist pattern over the second hard mask film;
etching the second hard mask film using the second resist pattern as an etching mask to form a second hard mask pattern;
performing an ion-implanting process on the first resist film using the second hard mask pattern as an ion implanting mask to form an ion implanting layer in a portion of the first resist film; and
selectively etching the first resist film using the second hard mask pattern and an ion implanting layer as an etching mask to form a first resist pattern.
2. The method according to claim 1, wherein the ion-implanting process is performed by slant ion-implanting process.
3. The method according to claim 1, wherein the first hard mask film comprises a polysilicon film or a nitride film.
4. The method according to claim 1, wherein the second hard mask film comprises an oxide film or a nitride film.
5. The method according to claim 1, wherein the second hard mask film has a thickness ranging from 0.02 \u03bcm to 0.2 \u03bcm.
6. The method according to claim 1, wherein the second resist pattern has a ratio of line pattern to space pattern of 1:3.
7. The method according to claim 1, wherein the ion implanting process is performed using an ion implanting source including phosphorus or boron having an implanting amount ranging from 1e10 to 1e18 and an implanting energy ranging from 8 KeV to 40 KeV.
8. The method according to claim 1, wherein the ion implanting process is controlled by changing at least one of an implanting frequency and an implanting angle.
9. The method according to claim 1, wherein a pitch between the second resist pattern is A, and a pitch between the first resist pattern and the second resist pattern is A2.
10. The method according to claim 1, wherein the first resist pattern is formed by selectively etching the first resist film with an O2 plasma.
11. The method according to claim 1, wherein the underlying layer is a metal film or an interlayer insulating film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electrical insulation sheet having a thermal conductivity of from about 1.0 Wm\xb0 K. to about 1.4 Wm\xb0 K. comprising glass flake paper wherein said glass flake paper comprises D, C or E glass flake, or a mixture thereof having an average flake size of approximately at least 5\u03bc thickness.
2. The electrical insulation sheet of claim 1, further comprising a reinforcing layer.
3. The electrical insulation sheet of claim 2, wherein the reinforcing later is a glass fabric or a polymeric film.
4. The electrical insulation sheet of claim 3, wherein the polymeric film is a polyester or polyimide film.
5. The electrical insulation sheet of claim 2, further comprising a binding resin.
6. The electrical insulation sheet of claim 1, wherein the glass flake has a median flake thickness of about 5\u03bc.
7. The electrical insulation sheet of claim 1, wherein the glass flake has a median particle size of from about 200\u03bc to about 400\u03bc in diameter.
8. The electrical insulation sheet of claim 1, wherein the glass flake paper has a thickness from about 50\u03bc to about 100\u03bc.
9. The electrical insulation sheet of claim 1, wherein the glass flake insulation sheet has a density of at least about 1.60 gcc.
10. A method of increasing the thermal conductivity of an electrical insulation sheet comprising mica as an insulating material, wherein the thermal conductivity of the insulation sheet is increased by replacing from >0% to 100% of the mica with a glass flake material selected from C, D or E glass flake.
11. A high voltage generator comprising a high voltage coil having an insulated ground wall, wherein an insulating layer on the insulated ground wall comprises a glass flake insulation sheet comprised of C, D or E glass flake or a mixture thereof.
12. The high voltage generator of claim 11, wherein the glass flake insulation sheet further comprises a reinforcing layer.
13. The high voltage generator of claim 12, wherein the reinforcing later is a glass fabric or a polymeric film.
14. The high voltage generator of claim 13, wherein the polymeric film is a polyester or polyimide film.
15. The high voltage generator of claim 12, wherein the glass flake insulation sheet further comprises a binding resin.
16. The high voltage generator of claim 11, wherein the glass flake has a median flake thickness of about 5\u03bc.
17. The high voltage generator of claim 11, wherein the glass flake has a median particle size of from about 200\u03bc to about 400\u03bc in diameter.
18. The high voltage generator of claim 11, wherein the glass flake insulation sheet has a thickness from about 50\u03bc to about 100\u03bc.
19. The high voltage generator of claim 11, wherein the glass flake insulation sheet has a density of at least about 1.60 gcc.