1. A solid-state imaging device comprising:
a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed; and
a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate,
wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and
the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.
2. The device according to claim 1, wherein the signal scanning circuit unit includes a photodiode which is provided in the semiconductor substrate and includes a diffusion layer of a first conductivity type which constitutes a signal charge accumulation region.
3. The device according to claim 1, wherein the unit pixel further includes a diffusion layer of a second conductivity type which is provided in the semiconductor substrate along a side wall of the insulation film.
4. The device according to claim 1, wherein the insulation film is disposed in a lattice-like plan-view shape in a manner to surround the unit pixel.
5. The device according to claim 1, wherein the insulation film is disposed in a discontinuous hole-like plan-view shape in a manner to surround a boundary part with the unit pixel that neighbors.
6. The device according to claim 1, further comprising a vertical shift register which selects the unit pixels on a row-by-row basis.
7. The device according to claim 1, further comprising an analog-digital conversion circuit which converts an analog signal, which is input from the unit pixel, to a digital signal.
8. A solid-state imaging device comprising:
a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, the photoelectric conversion unit being provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel including an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region, and being provided in the semiconductor substrate with an offset from the front surface of the semiconductor substrate where the signal scanning circuit unit is formed; and
a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate.
9. The device according to claim 8, wherein the signal scanning circuit unit includes a photodiode which is provided in the semiconductor substrate and includes a diffusion layer of a first conductivity type which constitutes a signal charge accumulation region.
10. The device according to claim 8, wherein the unit pixel further includes a diffusion layer of a second conductivity type which is provided in the semiconductor substrate along a side wall of the insulation film.
11. The device according to claim 8, wherein the insulation film is disposed in a lattice-like plan-view shape in a manner to surround the unit pixel.
12. The device according to claim 8, wherein the insulation film is disposed in a discontinuous hole-like plan-view shape in a manner to surround a boundary part with the unit pixel that neighbors.
13. The device according to claim 8, further comprising a vertical shift register which selects the unit pixels on a row-by-row basis.
14. The device according to claim 8, further comprising an analog-digital conversion circuit which converts an analog signal, which is input from the unit pixel, to a digital signal.
15. A method of manufacturing a solid-state imaging device, comprising:
attaching a first support substrate on a front surface of a semiconductor substrate on a side on which a signal scanning circuit is formed;
reducing a thickness of a back surface of the semiconductor substrate on a side opposite to the side on which the signal scanning circuit is formed;
forming, in the semiconductor substrate on the back surface side, a trench which defines a device isolation region in a manner to surround a unit pixel;
forming an insulation film by burying an insulative material in the trench;
attaching a second support substrate on the back surface side of the semiconductor substrate;
removing the first support substrate;
forming a signal scanning circuit unit on the front-side surface of the semiconductor substrate;
removing the second support substrate; and
forming a light-receiving surface on the back-side surface of the semiconductor substrate.
16. The method according to claim 15, further comprising doping a dopant in a semiconductor surface on a side wall in the trench, and forming an impurity diffusion layer.
17. The method according to claim 15, wherein when the trench which defines the device isolation region is formed, the trench is offset in the semiconductor substrate with a predetermined distance from a surface of the first support substrate.
18. The method according to claim 15, wherein a plan-view arrangement of the insulation film is such a lattice-shaped arrangement as to surround the unit pixel.
19. The method according to claim 15, wherein when the trench for forming the device isolation region is formed, a plan-view shape thereof is formed as a lattice-like shape in a manner to surround the unit pixel.
20. The method according to claim 15, wherein when the trench for forming the device isolation region is formed, a plan-view shape thereof is formed as a discontinuous hole-like shape in a manner to surround a boundary part with the unit pixel.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-7. (canceled).
8. A method of improving the sun protection factor of human skin, the method comprising:
(i) providing a composition comprising (a) \u03b2-carotene, (b) lutein and (c) lycopene, in a ratio by weight (a):(b):(c) of from 1:0.5:0.5 to 1:1.5:1.5; and
(ii) orally administering the composition to a human.
9. The method according to claim 8, wherein the composition further comprises one or more components selected from the group consisting of \u03b1-carotene, astaxanthin, \u03b1-cryptoxanthin, \u03b2-cryptoxanthin, zeaxanthin, phytoene, phtyofluene, \u03b3-carotene and neurosporin.
10. The method according to claim 8, wherein the \u03b2-carotene, the lutein and the lycopene in a ratio by weight of from 1:0.5:0.5 to 1:1.0:1.0.
11. The method according to claim 8, wherein the composition is dispersed in an edible oil.
12. The method according to claim 8, wherein the \u03b2-carotene, the lutein and the lycopene are each present in an amount of from 1 to 40 mg.
13. A method of inhibiting the aging of human skin, the method comprising:
(i) providing a composition comprising (a) \u03b2-carotene, (b) lutein and (c) lycopene, in a ratio by weight (a):(b):(c) of from 1:0.5:0.5 to 1:1.5:1.5; and
(ii) orally administering the composition to a human.
14. The method according to claim 13, wherein the composition further comprises one or more components selected from the group consisting of \u03b1-carotene, astaxanthin, \u03b1-cryptoxanthin, \u03b2-cryptoxanthin, zeaxanthin, phytoene, phtyofluene, \u03b3-carotene and neurosporin.
15. The method according to claim 13, wherein the \u03b2-carotene, the lutein and the lycopene in a ratio by weight of from 1:0.5:0.5 to 1:1.0:1.0.
16. The method according to claim 13, wherein the composition is dispersed in an edible oil.
17. The method according to claim 13, wherein the \u03b2-carotene, the lutein and the lycopene are each present in an amount of from 1 to 40 mg.