1. A method comprising:
selecting a reference printing device;
receiving a targeted media;
printing a test pattern at a first applied energy value;
printing at least one other test pattern, wherein the at least one other test pattern is printed at another applied energy value different than the first applied energy value;
determining a first print quality for the test pattern at the first applied energy value;
determining a second print quality for the other test pattern at the other applied energy value;
printing a first test pattern at a first print speed;
printing at least one additional print pattern at a second print speed;
determining a print quality for the test pattern at the first print speed;
determining an additional print quality for the at least one additional print pattern at the second print speed; and
generating a profile for the targeted media.
2. A method comprising:
receiving one or more profiles, wherein each of the profiles is associated with a type of media;
receiving a media of a first type of media;
identifying the first type of media;
identifying a profile associated with the first type of media;
adjusting at least one printing parameter of a printing device based on the profile associated with the first type of media.
3. The method according to claim 2, wherein identifying the first type of media includes reading a barcode associated with the media.
4. The method of claim 2 further comprising:
determining an ambient temperature of the environment prior to adjusting the at least one printing parameter; and
adjusting a temperature printing parameter at least partially based on the ambient temperature.
5. The method of claim 4, wherein adjusting the temperature printing parameter comprises:
processing an equation that is a function of a temperature coefficient associated with the printing device.
6. A printing device comprising:
a memory element configured to store a profile for each of a plurality of types of media;
a printhead configured to print indicia on the plurality of types of media based on at least one printing parameter; and
a controller configured to:
identify a first type of media received by the printing device;
identify a profile stored in the memory element associated with the first type of media; and
adjust the at least one printing parameter based on the profile.
7. The printing device according to claim 6, wherein the controller applies an offset to the profile based on the printing device.
8. The printing device according to claim 6 further comprising an input element for receiving one or more profiles.
9. The printing device according to claim 6 further comprising a conveyance apparatus configured to convey media through the printing device, wherein the conveyance apparatus defines a print speed and, wherein the controller is further configured to adjust the print speed based on the profile.
10. The printing device according to claim 6, wherein the profile includes a strobe pattern.
11. The printing device according to claim 10, wherein the strobe pattern includes a series of first and second pulses separated by a brief interruption.
12. The printing device according to claim 6 further comprising a sensor configured to read indicia from the first type of media, wherein the controller is further configured to identify the first type of media in response to the sensor reading the indicia.
13. The printing device according to claim 6 further comprising a RFID reader configured to read information from a supply of the first type of media, wherein the controller is further configured to identify the first type of media in response to the RFID reader reading the information from the supply.
14. The printing device of claim 6 further comprising:
a temperature sensor that determines an ambient temperature of the environment local to the printing device.
15. The printing device of claim 6 further comprising:
a network component that is configured to communicate with a remote data server to download the profile to the memory element.
16. A supply of a first type of media comprising:
an identification means configured to be accessible to a printing device such that the printing device can identify the first type of media.
17. The supply according to claim 16, wherein the identification means is a barcode.
18. The supply according to claim 16, wherein the identification means is an RFID tag.
19. The supply according to claim 16, wherein the identification means contains a profile for the first type of media.
20. The supply according to claim 19, wherein the profile provides information to the printing device for adjusting one or more printing parameters of the printing device for obtaining a desired print quality.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor device provided with a gate electrode formed on a semiconductor substrate via a gate insulating film, a first conductive type of body region formed so that the body region is adjacent to the gate electrode, a second conductive type of source region and a channel region respectively formed in the first conductive type of body region, a second conductive type of drain region formed in a position apart from the first conductive type of body region and a second conductive type of drift region formed so that the drift region surrounds the drain region, wherein:
a first conductive type of impurity layer ranging to the first conductive type of body region is formed under the gate electrode.
2. A semiconductor device according to claim 1, wherein:
the first conductive type of impurity layer is formed in the vicinity of an active region under the gate electrode.
3. A semiconductor device according to claim 2, wherein:
the first conductive type of impurity layer is extended from said first conductive type of body region to the direction of the drift region in a state of an impurity diffusion layer having a predetermined width of depth so as to surround the active region under the gate electrode.
4. A semiconductor device according to claim 3, wherein:
the first conductive type of impurity layer is extended from said first conductive type of body region for upper side to the direction of the drift region so as to approach for a surface direction of the substrate.
5. A semiconductor device according to claim 4, wherein:
the gate insulating film comprises a first insulating film and a second insulating film made of local oxidation film, having thicker than the first insulating film, said gate electrode is formed on the first insulating film and on the second insulating film so that an end of the first conductive type of impurity layer approach to a bottom of the second insulating film.
6. A semiconductor device according to claim 5, wherein:
the first conductive type of impurity layer is terminated beneath the gate electrode.
7. A semiconductor device according to claim 6, wherein:
the first conductive type of impurity layer is disposed in a depth so that a region surrounded by the first conductive type of body region and said second insulating film is depleted completely under the gate electrode.
8. A semiconductor device according to claim 6, wherein:
the first conductive type of impurity layer is disposed in a depth of 1 m from the first insulating film.
9. A method of manufacturing a semiconductor device, comprising:
a process for forming a second conductive type of well region by implanting and diffusing impurities of a second conductive type intoin a first conductive type of semiconductor substrate;
a process for forming a low density first conductive type of impurity layer and a low density second conductive type of impurity layer at an interval by respectively implanting and diffusing impurities of a first conductive type and impurities of a second conductive type intoin the second conductive type of well region;
a process for selectively oxidizing a region on the substrate to form a local oxide film;
a process for forming a middle density first conductive type of impurity layer ranging a low density first conductive type of impurity layer using resist films respectively having an opening on a local oxide film and on a gate electrode formation region as a mask after a gate insulating film is formed in a region except the local oxide film;
a process for forming a gate electrode so that the gate electrode ranges from the gate insulating film to the local oxide film; and
a process for implanting impurities of a second conductive type using resist films respectively having an opening on a source formation region formed in the low density first conductive type of impurity layer and on a drain formation region formed in the low density second conductive type of impurity layer as a mask to form a high density source region and a high density drain region.
10. A method of manufacturing a semiconductor device according to claim 9, wherein:
in the process for forming the second conductive type of well region, plural types of second conductive type of impurities different in a diffusion coefficient are implanted and diffused.
11. A method of manufacturing a semiconductor device according to claim 9, wherein:
in the process for forming the second conductive type of well region, as first impurities are implanted and diffused, second impurities are implanted and diffused.