1. A method of writing data to an array of magnetic memory cells using at least three parameters, wherein each of the memory cells comprise a stack of a free ferromagnetic layer, a pinned ferromagnetic layer, and an insulating tunneling barrier located therebetween, the method comprising:
providing a non-magnetic effect to select ones of the memory cells sufficient to decrease a coercivity of the select memory cells below a predetermined threshold;
providing a first magnetic field proximate to the select ones of the memory cells;
providing a second magnetic field proximate to the select ones of the memory cells during the providing of the first magnetic field; and
altering the magnetic moment of the select memory cells by exceeding a threshold magnetic field of the select memory cells with a combination of the decreased coercivity, the first magnetic field, and the second magnetic field.
2. A method according to claim 1, wherein providing the non-magnetic effect comprises providing a heat effect in the select memory cells to increase a temperature of the select memory cells to decrease the coercivity of the select memory cells below the predetermined threshold.
3. A method according to claim 1, wherein the first magnetic field is provided orthogonally to the second magnetic field.
4. A method according to claim 1, wherein providing the first and second magnetic fields further comprises providing the first and second magnetic fields proximate to the select ones of the memory cells during the providing of the non-magnetic effect.
5. A method according to claim 1, wherein providing the first magnetic field further comprises providing the first magnetic field proximate to the select memory cells by providing current to, but not through, the select ones of the memory cells, and during the providing of the second magnetic field.
6. A method according to claim 5, wherein the current provided to, but not through, the select memory cells to provide the first magnetic field is provided via a same conductor as that used to provide the non-magnetic effect through the select memory cells.
7. A method according to claim 5, wherein the providing the second magnetic field comprises providing a second current to the select ones of the memory cells.
8. A method according to claim 7, wherein the second current is greater than the first current.
9. A method according to claim 5, wherein the first magnetic field is provided orthogonally to the second magnetic field.
10. A method according to claim 5, further comprising activating switching devices coupled to corresponding ones of the select memory cells to provide the first current through the select memory cells, and deactivating the switching devices to provide the first magnetic field to, but not through, the select memory cells.
11. A method of writing data to an array of magnetic memory cells using at least three parameters, wherein each of the memory cells comprises a stack of a free ferromagnetic layer, a pinned ferromagnetic layer, and an insulating tunneling barrier located therebetween, the method comprising:
providing a current through select ones of the memory cells to increase a temperature of the select memory cells sufficient to decrease their coercivity below a predetermined threshold;
providing a first magnetic field proximate to the select ones of the memory cells;
providing a second magnetic field proximate to the select ones of the memory cells during the providing of the first magnetic field; and
altering the magnetic moment of the select memory cells by exceeding a threshold magnetic field of the select memory cells with a combination of the decreased coercivity, the first magnetic field, and the second magnetic field.
12. A method according to claim 11, wherein the first magnetic field is provided orthogonally to the second magnetic field.
13. A method according to claim 11, wherein providing the first magnetic field further comprises providing the first magnetic field proximate to the select memory cells by ceasing providing the current through the select memory cells, but providing the current to the select memory cells during the providing of the second magnetic field.
14. A method according to claim 13, wherein the current provided to the select memory cells is greater than the current provided through the select memory cells.
15. A method according to claim 11, wherein providing the first and second magnetic fields further comprises providing the first and second magnetic fields proximate to the select ones of the memory cells during the providing of the current through the select ones of the memory cells.
16. A method according to claim 11, wherein providing the first magnetic field further comprises providing the first magnetic field proximate to the select memory cells by providing current to, but not through, the select ones of the memory cells, and during the providing of the second magnetic field.
17. A method according to claim 16, wherein the providing the second magnetic field comprises providing a second current to the select ones of the memory cells.
18. A method according to claim 17, wherein the second current is greater than the first current.
19. A method according to claim 16, further comprising activating switching devices coupled to corresponding ones of the select memory cells to provide the first current through the select memory cells, and deactivating the switching devices to provide the first magnetic field to, but not through, the select memory cells.
20. A method of writing data to an array of magnetic memory cells using at least three parameters, wherein each of the memory cells comprises a stack of a free ferromagnetic layer, a pinned ferromagnetic layer, and an insulating tunneling barrier located therebetween, the method comprising:
providing a first current through select ones of the memory cells to increase a temperature of the select memory cells sufficient to decrease their coercivity below a predetermined threshold;
providing a second current to, but not through, the select ones of the memory cells to provide a first magnetic field to the select memory cells;
providing a third current to the select ones of the memory cells to provide a second magnetic field to the select memory cells that is orthogonal to the first magnetic field and during the providing of the first magnetic field; and
altering the magnetic moment of the select memory cells by exceeding a threshold magnetic field of the select memory cells with a combination of the decreased coercivity, the first magnetic field, and the second magnetic field.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A punch data generating device that generates punch data for execution with an embroiderable sewing machine including a needle bar that is moved up and down and that is configured to allow attachment of a punch needle for forming a plurality of penetrations on a sheet of workpiece by piercing the workpiece in dot-by-dot strokes of the punch needle, a transfer mechanism that is configured to transfer the workpiece in two predetermined directions in coordination with an up and down movement of the punch needle to execute a penetration forming operation for forming the penetrations on the workpiece, the punch data generating device, comprising:
a cut data generator that generates cut data constituting the punch data, the cut data being configured to instruct sequential formation of the penetrations along an outline of a predetermined pattern to allow cutting of the outline; and
an auxiliary cut data generator that generates auxiliary cut data constituting the punch data, the auxiliary cut data being configured to instruct sequential formation of the penetrations contacting the outline of the pattern to form a cut that facilitates detachment of the outline from the workpiece.
2. The device according to claim 1, wherein the auxiliary cut data is used for formation of a through hole comprising a portion of the outline of the pattern and the cut.
3. The device according to claim 2, wherein the through hole is sized to allow insertion of a user’s finger.
4. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data to form a plurality of the cuts.
5. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data for use in a sewing device that uses at least one needle bar from a collection of multiple needle bars.
6. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data for use in a sewing device that is provided with a single needle bar, the penetrations being formed with the punch needle attached to the needle bar instead of a sewing needle.
7. The device according to claim 1, further comprising a specifier for specifying a location where the cut is to be formed,
wherein the auxiliary cut data generator generates the auxiliary cut data such that the cut is formed at the location specified by the specifier.
8. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data such that the cut constitutes a portion of a polygonal through hole configured to be formed on the workpiece.
9. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data such that the cut extends outward in a straight line from the outline of the pattern.
10. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data such that the cut includes a bend.
11. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data such that the cut includes at least one straight line.
12. The device according to claim 1, wherein the auxiliary cut data generator generates the auxiliary cut data such that the cut defines an area enclosed by a plurality of lines.
13. A computer readable medium that stores a punch data generating program for generating punch data for execution with an embroiderable sewing machine including a needle bar that is moved up and down and that is configured to allow attachment of a punch needle for forming a plurality of penetrations on a sheet of workpiece by piercing the workpiece in dot-by-dot strokes of the punch needle, a transfer mechanism that is configured to transfer the workpiece in two predetermined directions in coordination with the up and down movement of the punch needle to execute a penetration forming operation for forming the penetrations on the workpiece, the punch data generating program, comprising:
instructions for generating cut data constituting the punch data, the cut data being configured to instruct sequential formation of the penetrations along an outline of a predetermined pattern to allow cutting of the outline; and
instructions for generating auxiliary cut data constituting the punch data, the auxiliary cut data being configured to instruct sequential formation of the penetrations contacting the outline of the pattern to form a cut that facilitates detachment of the outline from the workpiece.