1. A semiconductor device comprising:
a plurality of memory arrays, and
a plurality of memory array control circuits,
each of said plurality of memory array control circuits including:
a readwrite control circuit for controlling a readwrite operation to the memory array, and
a selection circuit for selecting and activating the memory array based on a clock signal and an output signal from said readwrite control circuit,
wherein
said readwrite control circuit includes:
a counter for incrementing a count number when a write command is inputted, and decrementing said count number when a read command is inputted, and
a determination circuit for determining whether or not effective data exists in said memory array, based on said count number of said counter.
2. The semiconductor device according to claim 1, wherein said selection circuit includes a logic gate receiving the output signal from said readwrite control circuit and said clock signal, and said logic gate supplies said clock signal to the memory array when said output signal is activated.
3. The semiconductor device according to claim 1, wherein
said semiconductor device further comprises a memory controller,
said memory controller includes an address management circuit for managing a reading-completed read address, and
said address management circuit having:
a plurality of buffer memories,
a buffer memory specification circuit for specifying the buffer memory to store said read address from the plurality of buffer memories, and
a write address determination circuit for determining a write address required at the time of the write operation by sequentially referring to said buffer memories.
4. A semiconductor device comprising:
a plurality of memory arrays, and
a plurality of memory array control circuits,
each of said plurality of memory array control circuits including:
a readwrite control circuits for controlling a readwrite operation to the memory array, and
a selection circuit for selecting and activating the memory array based on a check clock signal and an output signal from said readwrites control circuits,
wherein
said semiconductor device includes:
a band determination circuit for determining a band based on a command interval of a command inputted to write data in said plurality of memory arrays; and
a control circuit for determining said plurality of memory arrays to write said data at the same time in a dispersed manner, based on an output of said band determination circuit.
5. A semiconductor device comprising:
a plurality of memory arrays, and
a first memory array control circuit among a plurality of memory array control circuits includes a first logic gate for receiving a clock signal and a fixed potential signal,
each of said plurality of other memory array control circuits including:
a readwrite control circuit for controlling a readwrite operation to the memory array, and
a second logic gate for receiving an output signal from said readwrite control circuit and said clock signal, and
said second logic gate supplying said clock signal to the other memory array when said output signal is activated.
6. The semiconductor device according to claim 5, wherein
said semiconductor device further comprises a memory controller,
said memory controller includes an address management circuit for managing a reading-completed read address, and
said address management circuit having:
a plurality of buffer memories,
a buffer memory specification circuit for specifying the buffer memory to store said read address from the plurality of buffer memories, and
a write address determination circuit for determining a write address required at the time of the write operation by sequentially referring to said buffer memories.
7. A semiconductor device comprising:
a plurality of memory arrays, wherein each of said plurality of memory arrays is assigned a priority, and
a plurality of memory array control circuits provided so as to correspond to said plurality of memory arrays,
each of said plurality of memory array control circuits including:
a readwrite control circuit for controlling a readwrite operation to the corresponding memory array, and
a selection circuit having a logic gate for controlling the corresponding memory array, wherein:
said readwrite control circuit is configured to output a control signal with a first logic value when the corresponding memory array has effective data;
said logic gate is configured the corresponding memory array responsive to the control signal,
the plurality of memory array control circuits includes a first memory array control circuit corresponding to a first memory array among the plurality of memory arrays and a second memory array control circuit corresponding to a second memory array among the plurality of memory arrays, the second memory array having one level of priority higher than a priority level of the first memory array,
the first memory array control circuit includes a first logic gate and a first readwrite control circuit and the second memory array control circuit includes a second logic gate and a second readwrite control circuit,
the first logic gate is configured to receive a first control signal from the first readwrite control circuit, and a second control signal from the second readwrite control circuit corresponding to the second memory array having the one level of priority higher than the priority level of the first memory array corresponding to said first memory array control circuit, and
the first logic gate provided in the first memory array control circuit activates the first memory array when the first control signal has the first logic value or the second control signal has the first logic value.
8. The semiconductor device according to claim 7, wherein
said semiconductor device further comprises a memory controller,
said memory controller includes an address management circuit for managing a reading-completed read address, and
said address management circuit having:
a plurality of buffer memories,
a buffer memory specification circuit for specifying the buffer memory to store said read address from the plurality of buffer memories, and
a write address determination circuit for determining a write address required at the time of the write operation by sequentially referring to said buffer memories.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A device for noninvasive detection of an electric field or potential, or derivatives thereof, in a medium exhibiting a linear or second-order electrooptic effect, this device comprising:
an optical source for illuminating at least one region of the medium to be probed with a light beam, whose path defines an optical axis;
mapping means for mapping a phase shift of the light beam, said phase shift being induced by an electric field or potential, or derivatives thereof, in the region to be probed,
wherein the mapping means comprise a confocal microscope in which the region to be probed is placed in a manner suitable for forming an image of one plane of the region to be probed.
2. The device as claimed in claim 1, wherein the mapping means comprise an interferometer for splitting the light beam into a reference beam and a probe beam and for measuring the phase shift between the reference beam and the probe beam after the latter has passed through the region to be probed, in this interferometer, and wherein a photodetection means for photodetecting light together with a processing and servocontrol unit carry out a servocontrol of the respective path lengths of the reference beam and the probe beam being active up to a cutoff frequency fc and these mapping means having a signal sampling frequency fa higher than the cutoff frequency fc.
3. The device as claimed in claim 2, which includes moving means for moving the medium in the probe beam along three non-collinear directions in space.
4. The device as claimed in claim 2, which includes scanning means for scanning the region to be probed and a reference region, with the light beam at an acquisition frequency f of images recorded by measuring means for measuring the variations in the phase of the light beam above the cutoff frequency fc.
5. The device as claimed in claim 4, wherein the scanning means scan the region to be probed and the reference region along a first direction in space at a frequency fx and along a second direction in space at a frequency fy, in order to form an image of n pixels along the first direction and m pixels along the second direction, the frequencies fx and fy being chosen such that fx=fy n and fy=fa m.
6. The device as claimed in claim 5, wherein the scanning means comprise four acoustooptic deflectors, two for deflecting the light beam, upstream of the confocal microscope, each in one of the first and second directions in space respectively, and two for rectifying the light beam, each in one of the first and second directions in space respectively, downstream of the confocal microscope.
7. The device as claimed in claim 6, wherein at least one acoustooptic deflector, downstream of the confocal microscope is set so as to make 0th-order of the light beam inclined to the optical axis and to retain paraxial 1st-order.
8. The device as claimed in claim 7, which comprises a Galileo telescope for increasing an angle between the 1st-order and the optical axis.
9. The device as claimed in claim 1, which further includes, upstream of the confocal microscope, controlling means for controlling a polarization of the probe beam incident on the region to be probed.
10. A method for noninvasive detection of an electric field or potential, or derivatives thereof, in a medium exhibiting a linear or second-order electrooptic effect, in which:
at least one region of the medium to be probed is illuminated with an optical source with a light beam whose path defines an optical axis;
a phase shift of the light beam, induced by an electric field or potential, or derivatives thereof, in the at least one region of the medium to be probed is mapped;
wherein the at least one region of the medium to be probed is placed in a confocal microscope, which is itself inserted in mapping means for mapping the phase shift of the light beam in a manner suitable for forming an image of a plane in the at least one region of the medium to be probed.
11. The method as claimed in claim 10, in which, knowing the electric field is mapped in the medium, from medium electrooptic property distribution.
12. The method as claimed in claim 10, in which an electric field of known configuration is generated in the medium so as to reveal electrooptic properties of the medium.
13. The method as claimed in claim 10, wherein an interferometer is used to split the light beam into a reference beam and a probe beam and to measure a phase shift between the reference beam and the probe beam after the latter has passed through the region to be probed, a photodetection means for photodetecting light together with a processing and servocontrol unit servocontrol respective path lengths of the reference beam and the probe beam and images are acquired by the photodetection means at a signal sampling frequency fa higher than the cutoff frequency fc for the servocontrol of the respective path lengths of the reference beam and the probe beam.
14. The method as claimed in claim 13, wherein the medium is moved in the probe beam, along three non-collinear directions in space.
15. The method as claimed in claim 14, wherein the medium is excited at a frequency fe and the variation in the phase shift between the probe beam and the reference beam is measured at this same frequency fe.
16. The method as claimed in claim 13, wherein the region to be probed and a reference region are scanned with the probe beam at an image acquisition frequency f for images recorded by the means for measuring the variations in the phase of the light beam higher than the cutoff frequency fc.
17. The method as claimed in claim 16, wherein the region to be probed and the reference region are scanned along a first direction in space at a frequency fx and along a second direction in space at a frequency fy, in order to form an image of n pixels along the first direction and m pixels along the second direction, the frequencies fx and fy being chosen such that fx=fy n and fy=fa m.
18. The method as claimed in claim 10, wherein at least one acoustooptic deflector downstream of the aufocal telescope is set so as to make 0th-order of the light beam inclined to the optical axis and to retain paraxial 1st-order.
19. The method as claimed in claim 18, in which an angle between the 1st-order and the optical axis is increased by means of a Galileo telescope.
20. The method as claimed in claim 10, wherein the region to be probed includes at least one part of an optoelectronic component to which a potential is applied.
21. The method as claimed in claim 20, wherein the potential is applied via at least one electrode, the shape of which is suitable for creating an electric field gradient.
22. The method as claimed in claim 20, wherein the potential is applied via at least one multipolar electrode.
23. The method as claimed in claim 20, wherein the optoelectronic component is placed in an optically active medium.
24. The method as claimed in claim 20, wherein the propagation of an electrical pulse in the optoelectronic component is studied.
25. The method as claimed in claim 10, wherein the region to be probed includes at least one part of a fractal aggregate.
26. The method as claimed in claim 10, wherein the region to be probed includes at least one part of a biological medium.
27. The method as claimed in claim 26, wherein the region to be probed includes at least one part of a biological membrane.
28. The method as claimed in claim 26, wherein the region to be probed includes at least one part of a neuron or of a neural network.
29. The method as claimed in claim 10, wherein the region to be probed includes at least one part of an artificial membrane.
30. The method as claimed in claim 10, wherein the region to be probed constitutes at least one part of a chemical medium.
31. The method as claimed in claim 10, wherein the medium is doped with molecules or ions having electrooptic properties, or conferring electrooptic properties on the medium.