1. A method comprising:
attaching a high voltage (HV) design level to an HV sector, an injector design level to an injector source, and a guard ring identifier to a guard ring;
identifying the HV and a low voltage (LV) sector;
identifying injection sources and their device type (p vs. n, voltage capability);
evaluating a distance of the injection device from a target circuit;
evaluating guard ring location, type, and characteristics;
evaluating an influence of the injection source on the target circuit;
modifying device, circuit, and guard ring placement and spacing; and
modifying circuit well and substrate contact spacing based on the distance from the injector.
2. The method in accordance with claim 1, wherein the HV design level comprises a first virtual level and the injector design level comprises a second virtual level, and the method further comprises:
laying the first and second virtual levels one atop the other to identify the injection sources in the HV sector.
3. A method comprising:
identifying at least one high voltage device on a semiconductor chip;
identifying a circuit on the semiconductor chip separated from the identified at least one high voltage device by a guard ring;
evaluating the circuit for a latch-up condition; and
when the latch-up condition occurs, adjusting the contact-circuit spacing in the circuit.
4. The method in accordance with claim 3, wherein the identifying of at least one high voltage device comprises creating a virtual design level for high voltage sectors on the semiconductor chip.
5. The method in accordance with claim 3, wherein the identifying of at least one high voltage device comprises creating a virtual design level for injectors on the semiconductor chip.
6. The method in accordance with claim 3, wherein the identifying of at least one high voltage device comprises:
creating a virtual design level for high voltage sectors on the semiconductor chip;
creating a virtual design level for injectors on the semiconductor chip; and
performing a logical AND of the virtual design level for high voltage sectors and the virtual design levels for injectors.
7. The method in accordance with claim 3, further comprising determining a device type of the identified at least one high voltage device.
8. The method in accordance with claim 3, wherein the circuit is at least one of:
arranged on a perimeter of a high voltage sector;
arranged adjacent a high voltage device;
arranged adjacent a high voltage ring;
a power grid; and
a power domain.
9. The method in accordance with claim 3, wherein the latch-up condition is evaluated by at least one of design rules, data tables, and analytical relationships.
10. The method in accordance with claim 3, further comprising determining a spacing between the identified at least one high voltage device and the circuit.
11. The method in accordance with claim 10, wherein the adjusted contact-circuit spacing is based on the determined spacing between the identified at least one high voltage device and the circuit.
12. The method in accordance with claim 3, further comprising determining a type and characteristics of the guard ring,
wherein the characteristics comprise depth, width, size and shape of the guard ring.
13. The method in accordance with claim 12, further comprising adjusting at least one of a depth, width, size and shape of the guard ring.
14. A semiconductor structure under design, comprising:
at least one high voltage sector and at least one low voltage sector;
at least one injection device arranged within the at least one high voltage sector;
at least one circuit located within the at least one low voltage sector; and
a guard ring arranged between the at least one circuit and the injection device,
wherein influence by the at least one injection device on the at least one circuit is adjustable via changeable contact-circuit spacing of the at least one circuit depending upon a distance between the injection device and the at least one circuit.
15. The semiconductor structure under design in accordance with claim 14, wherein the contact-circuit spacing includes a substrate contact to circuit spacing and a well contact to circuit spacing.
16. The semiconductor structure under design in accordance with claim 14, further comprising changeable guard ring characteristics to further adjust the influence of the at least one injection device on the at least one circuit.
17. The semiconductor structure under design in accordance with claim 16, wherein the guard ring characteristics comprise width, depth, size and shape.
18. A testing method for evaluating the semiconductor structure under design in accordance with claim 14, comprising:
identifying the at least one injection device arranged within the at least one high voltage sector;
evaluating an influence of the at least one injection device on the at least one circuit; and
in an event of a latch-up condition, adjusting a changeable contact-circuit spacing of the at least one circuit.
19. The testing method in accordance with claim 18, wherein the identifying of the at least one injection device comprises:
creating a virtual design level for the at least one high voltage sector;
creating a virtual design level for the at least one injection device; and
performing a logical AND of the virtual design level for the at least one high voltage sector and the virtual design levels for the at least one injection device.
20. The testing method in accordance with claim 18, wherein, in an event of a latch-up condition, the method further comprises adjusting guard ring characteristics to further adjust the influence of the at least one injection device on the at least one circuit.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method to assemble an optical assembly having a red laser diode (LD), a green LD, a blue LD, a first lens, a second lens, a third lens, and a base to mount the red, green and blue LDs, and the first to third lenses, the optical assembly outputting multiplexed light containing red light emitted from the red LD, green light emitted from the green LD, and blue light emitted from the blue LD, the method comprising steps of:
mounting a first LD among the red, green and blue LDs on a top surface of the base such that the first LD emits first light projecting on a first point on a virtual plane after transmitted through the first lens, the virtual plane being placed apart by at least one meter from the base, the first point being positioned on a line corresponding to the top surface of the base;
mounting a second LD among the red, green and blue LDs except for the first LD on the top surface of the base such that the second LD emits second light projecting on a second point on the virtual plane after transmitted through the second lens, the second point being positioned on the line;
mounting a third LD among the red, green and blue LDs except for the first and second LDs on the top surface of the base such that the third LD emits third light projecting on a third point on the virtual plane after transmitted through the third lens, the third point being positioned on the line;
after mounting the second LD, mounting a first wavelength selective filter (WSF) on the top surface of the base, wherein the first WSF transmits one of the first light transmitted through the first lens and the second light transmitted through the second lens but reflects another of the first light transmitted through the first lens and the second light transmitted through the second lens, such that one of the first light and the second light reflected by the first WSF projects on a point on the virtual plane on which another of the first light transmitted through the first lens and the second light transmitted through the second lens projects, the first WSF outputting a mid-multiplexed light containing the first light and the second light; and
mounting a second WSF on the top surface of the base, wherein the second WSF transmits one of the mid-multiplexed light and the third light transmitted through the third lens but reflects another of the mid-multiplexed light and the third light transmitted through the third lens, such that one of the mid-multiplexed light and the third light reflected by the second WSF projects on a point on which another of the mid-multiplexed light and the third light transmitted through the second WSF projects, the second WSF outputting the multiplexed light.
2. The method of claim 1,
wherein the mounting the first WSF is carried out before the mounting the third LD on the base.
3. The method of claim 1,
wherein the mounting the second WSF is carried out such that the second WSF becomes substantially parallel to the first WSF.
4. The method of claim 3,
wherein the mounting the third LD on the base is carried out such that the third point locates in a side same as a side of the second point with respect to the first point.
5. The method of claim 1,
wherein the mounting the third LD on the base is carried out such that the third point locates in a position opposite to the second point with respect to the first point.
6. The method of claim 5,
wherein the mounting the second WSF is carried out such that the second WSF makes a right angle with respect to the first WSF.
7. An optical module that outputs multiplexed light containing red light, green light, and blue light, comprising:
a first laser diode (LD) to emit the red light;
a second LD to emit the green light;
a third LD to emit the blue light;
a first lens to collimate the red light emitted from the first LD to generate collimated red light, the first lens being mounted on a base;
a second lens to collimate the green light emitted from the second LD to generate collimated green light, the second lens being mounted on the base;
a third lens to collimate the blue light emitted from the third LD to generate collimated blue light, the third lens being mounted on the base; and
a package enclosing the first to third LDs and the first to third lenses,
wherein the collimated red light, the collimated green light, and the collimated blue light are aligned with an optical axes of the optical module to be generated as the multiplexed light.
8. The optical module of claim 7, further comprising
a first wavelength selective filter (WSF) that reflects one of the collimated red light and the collimated green light but transmits another of the collimated red light and the collimated green light to generate mid-multiplexed light containing the collimated red light and the collimated green light whose optical axes are aligned to each other; and
a second WSF that reflects one of the mid-multiplexed light and the collimated blue light but transmits another of the mid-multiplexed light and the collimated blue light, wherein the second WSF outputs the multiplexed light congaing the collimated red light, the collimated green light, and the collimated blue light whose optical axes are aligned to each other.
9. The optical module of claim 8, further comprising a mirror mounted on the base,
wherein the mirror reflects the multiplexed light toward a direction perpendicular to the base.
10. The optical module of claim 9,
wherein each of the red light, the green light, and the blue light has an ellipsoidal far-field pattern, and
wherein the mirror provides a restricted area to reflect the multiplexed light, the multiplexed light reflected at the restricted area having a circular far-field pattern.
11. The optical module of claim 8,
wherein the package is a CAN package.
12. The optical module of claim 11,
wherein the CAN package includes a cap and a stem with a block protruding therefrom, the cap and the stem enclosing the first to third LDs, the first to third lenses, and the first and second WSFs therein air-tightly, the base being mounted in a side of the block, and
wherein the multiplexed light is output to a direction perpendicular to the stem.
13. The optical module of claim 12,
wherein the first to third LDs are mounted on the base.
14. The optical module of claim 12,
wherein the first to third LDs are mounted on the side of the block.
15. The optical module of claim 12,
wherein the block provide a pocket in the side thereof, the base being mounted within the pocket.
16. The optical module of claim 8,
wherein the first to third lenses and the first and second WSFs are mounted on the base via respective sub-bases.
17. The optical module of claim 8, further comprising fourth and fifth LDs, first and second half wave retarders, and first and second polarization combiners,
wherein the forth LD emits green light, the fifth LD emits blue light, the first half wave retarder rotates a polarization direction of the green light emitted from the forth LD by 90\xb0, the second half wave retarder rotates a polarization direction of the blue light emitted from the fifth LD by 90\xb0, the first polarization combiner combines the collimated green light with the green light output from the first half wave retarder to generate a first combined light, the second polarization combiner combines the collimated blue light with the blue light output from the second half wave retarder to generate a second combined light, and
wherein the first WSF multiplexes the collimated red light with the first combined light to generate the mid-multiplexed light, and the second WSF multiplexes the mid-multiplexed light with the second combined light to generate the multiplexed light.
18. The optical module of claim 17,
wherein the green light emitted from the second LD has a wavelength different from a wavelength of the green light emitted from the fourth LD, and the blue light emitted from the third LD has a wavelength different from a wavelength of the blue light emitted from the fifth LD.
19. The optical module of claim 17, further comprising a sixth LD, a third half wave retarder, and a third polarization combiner,
wherein the six LD emits red light, the third half wave retarder rotates a polarization direction of the red light emitted from the sixth LD by 90\xb0, the third polarization combiner combines the collimated red light with the red light output from the third half wave retarder to generate a third combined light,
wherein the first WSF multiplexes the third combined light with the first combined light.