1. A method of forming an image sensor device, the method comprising:
forming a patterned hard mask layer over a substrate, wherein the patterned hard mask layer has a plurality of first openings in a periphery region of the substrate, and a plurality of second openings in a pixel region of the substrate;
forming a first patterned mask layer over the pixel region to expose the periphery region;
etching a plurality of first trenches into the substrate in the periphery region;
filling each first trench, each first opening and each second opening with a dielectric material;
forming a second patterned mask layer over the periphery region to expose the pixel region;
removing the dielectric material in each second opening over the pixel region; and
implanting dopant through each second opening to form doped isolation features in the pixel region.
2. The method of claim 1, wherein the first patterned mask layer includes a first type photoresist, and the second patterned mask layer includes a second type photoresist, wherein the first type is opposite to the second type.
3. The method of claim 1, wherein the first patterned mask layer includes a negative photoresist.
4. The method of claim 1, wherein the second patterned mask layer includes a positive photoresist.
5. The method of claim 1, further comprising:
forming at least one light-sensing region in the pixel region surrounded by the doped isolation features.
6. The method of claim 5, wherein at least one light-sensing region has a first conductivity type and the doped isolation features have a second conductivity type opposite to the first conductivity type.
7. The method of claim 1, further comprising:
defining the first patterned mask layer by a first photomask; and
defining the second patterned mask layer by a second photomask, wherein the first photomask is the same as the second photomask.
8. The method of claim 1, wherein the dopants comprise boron (B), BF2, gallium, indium or a combination thereof.
9. A method of forming an image sensor device, the method comprising:
providing a substrate having a front surface and a back surface, and a pixel region and a periphery region;
forming a patterned hard mask layer over the front surface of the substrate, wherein the patterned hard mask layer has a plurality of first openings in the periphery region, and a plurality of second openings in the pixel region;
forming a first patterned mask layer over the patterned hard mask layer in the pixel region to expose the periphery region;
etching a plurality of first trenches from the front surface in the periphery region;
filling each first trench, each first opening and each second opening with a dielectric material;
forming a second patterned mask layer over the patterned hard mask layer in the periphery region to expose the pixel region;
removing the dielectric material in each second opening over the pixel region;
implanting a dopants through each second opening to form doped isolation features in the pixel region;
forming at least one photodetector in the substrate of the pixel region, wherein the at least one photodetector is surrounded by the doped isolation features; and
forming a color filter and a lens over the back surface of the substrate, wherein the color filter and the lens are aligned with the at least one photodetector.
10. The method of claim 9, wherein the first mask layer includes a first type photoresist, and the second mask layer includes a second type photoresist, wherein the first type is opposite to the second type.
11. The method of claim 9, wherein the first mask layer includes a negative photoresist.
12. The method of claim 9, wherein the second mask layer includes a positive photoresist.
13. The method of claim 9, further comprising:
defining the first patterned mask layer by a first photomask; and
defining the second patterned mask layer by a second photomask, wherein the first photomask is the same as the second photomask.
14. The method of claim 9, wherein each of the first trenches has a depth D1 into the substrate, the depth D1 is in a range from about 2000 \u212b to about 3500 \u212b.
15. The method of claim 9, wherein each of the doped isolation features has a depth D2 into the substrate, the depth D2 is in a range from about 1000 \u212b to about 3000 \u212b.
16. The method of claim 9, further comprising:
forming an isolation well region in the pixel region, wherein the isolation well region and the doped isolation features surround the at least one photodetector.
17. The method of claim 16, wherein the isolation well region and the doped isolation features comprise boron (B), BF2, gallium, indium or combination thereof.
18. The method of claim 9, wherein at least one of the first mask layer and the second mask layer includes a dielectric material that has a different etching resistance to the hard mask layer.
19. A method of forming an image sensor device, the method comprising:
providing a substrate having a front surface and a back surface, and a pixel region and a periphery region;
forming a patterned hard mask layer over the front surface of the substrate, wherein the patterned hard mask layer has a plurality of first openings in the periphery region, and a plurality of second openings in the pixel region;
forming a first patterned photoresist over the patterned hard mask layer in the pixel region to expose the periphery region;
etching a plurality of first trenches from the front surface in the periphery region;
filling each first trench, each first opening and each second opening with a dielectric material;
forming a second patterned photoresist over the patterned hard mask layer in the periphery region to expose the pixel region;
removing the dielectric material in each second opening over the pixel region;
implanting dopants through each second opening to form doped isolation features in the pixel region;
forming at least one photodetector in the substrate of the pixel region, wherein the at least one photodetector is surrounded by the doped isolation features; and
forming a doped layer in the back surface of the substrate.
20. The method of claim 19, wherein the dopants comprise boron (B), BF2, gallium, indium or combination thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compound of Formula Ia:
wherein:
Ar1 is a five or six-membered aromatic ring selected from phenyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, furyl, thienyl, oxazolyl, thiazolyl, isoxazolyl, isothiazolyl, pyrrolyl, imidazolyl, or pyrazolyl;
where Ra, Rb, Rc, Rd, and Re are, when present, each independently H, halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, nitro, or aryl or heteroaryl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro,
or where two of the Ra, Rb, Rc, Rd, and Re are taken together to form another 5 or 6 membered ring containing C, N, O andor S atoms, optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro,
R\u2032 is, when present, H or alkyl, and
R is alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, acyl, or alkoxycarbonyl, or aryl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro; or R is heteroaryl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro;
R1, R2, and R3 are each independently H, halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro;
or a salt thereof.
2. A compound of claim 1 having the structure of Formula Ib:
3. A compound of claim 2 wherein Ra, Rb, Rc, Rd, and Re are independently taken from H, halogen, alkyl, and haloalkyl.
4. A compound of claim 2 wherein Ra, Rb, Rc, Rd, and Re are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
5. A compound of claim 2 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
6. A compound of claim 2 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
7. A compound of claim 1 having the structure of Formula Ic:
8. A compound of claim 7 wherein Ra, Rb, Rc, and Rd are independently taken from H, halogen, alkyl, and haloalkyl.
9. A compound of claim 7 wherein Ra, Rb, Rc, and Rd are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
10. A compound of claim 7 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
11. A compound of claim 7 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
12. A compound of claim 1 having the structure of Formula Id:
13. A compound of claim 12 wherein Ra, Rb, Rc, and Re are independently taken from H, halogen, alkyl, and haloalkyl.
14. A compound of claim 12 wherein Ra, Rb, Rc, and Re are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
15. A compound of claim 12 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
16. A compound of claim 12 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
17. A compound of claim 1 having the structure of Formula Ie:
18. A compound of claim 17 wherein Ra, Rb, Rd, and Re are independently taken from H, halogen, alkyl, and haloalkyl.
19. A compound of claim 17 wherein Ra, Rb, Rd, and Re are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
20. A compound of claim 17 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
21. A compound of claim 17 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
22. A compound of claim 1, wherein Ar1 is a five membered heteroaromatic ring containing 1, 2 or 3 heteroatoms selected from the group consisting of N, S, and O.
23. A compound of claim 1 having the structure of Formula If:
24. A compound of claim 23 wherein Rb, Rc, and Rd are independently taken from H, halogen, alkyl, and haloalkyl.
25. A compound of claim 23 wherein Rb, Rd, and Re are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
26. A compound of claim 23 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
27. A compound of claim 23 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
28. A compound of claim 1 having the structure of Formula Ig:
29. A compound of claim 28 wherein Rb, Rc, Rd are independently taken from H, halogen, alkyl, and haloalkyl.
30. A compound of claim 28 wherein Rb, Rc, and Rd are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
31. A compound of claim 28 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
32. A compound of claim 28 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
33. A compound of claim 1 having the structure of Formula Ih:
34. A compound of claim 33 wherein Ra, Rc, Rd, and Re are independently taken from H, halogen, alkyl, and haloalkyl.
35. A compound of claim 33 wherein Ra, Rc, and Rd are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
36. A compound of claim 33 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
37. A compound of claim 33 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
38. A compound of claim 1 having the structure of Formula Ii:
39. A compound of claim 38 wherein Ra, Rc, and Rd, are independently taken from H, halogen, alkyl, and haloalkyl.
40. A compound of claim 38 wherein Ra, Rc, and Rd are independently taken from H, fluoro, chloro, methyl, and trifluoromethyl.
41. A compound of claim 38 wherein R1, R2, R3, and R4 are independently taken from H, halogen, alkyl, and alkoxy.
42. A compound of claim 38 wherein R is phenyl optionally substituted with halogen, alkyl, alkenyl, alkynyl, haloalkyl, haloalkenyl, haloalkynyl, alkoxy, alkylthio, haloalkoxy, haloalkylthio, cyano, or nitro.
43. A compound of claim 1 selected from the group consisting of:
Structure
Chemical Name
1
1-4-Chloro-3-(3-chloro-benzamido)-benzoyl-4-(2-chlorophenyl)-thiosemicarbazide
2
1-3-(3-Chlorobenzamido)-benzoyl-4-(2-chlorophenyl)-thiosemicarbazide
3
1-2-Chloro-3-(3-chloro-benzamido)-benzoyl-4-(2-chlorophenyl)-thiosemicarbazide
4
1-3-(3-Chlorobenzamido)-2-methylbenzoyl-4-(2-chloro-phenyl)-thiosemicarbazide
5
1-3-(3-Chlorobenzamido)-4-methylbenzoyl-4-(2-chlorophenyl)-thiosemicarbazide
6
1-3-(3-Chlorobenzamido)-benzoyl-4-phenyl-thiosemicarbazide
7
1-3-(3-Chlorobenzamido)-benzoyl-4-(2-trifluoromethylphenyl)-thiosemicarbazide
8
1-3-(3-Chlorobenzamido)-benzoyl-4-(4-chloro-3-trifluoromethyiphenyl)-thiosemicarbazide
9
1-3-(3-Chlorobenzamido)-benzoyl-4-(2-fluorophenyl)-thiosemicarbazide
10
1-3-(3-Chlorobenzamido)-benzoyl-4-(ethoxycarbonyl-thiosemicarbazide
11
4-(2-Chlorophenyl)-1-4-chloro-3-(3-trifluoromethylbenzamido)-benzoyl-thiosemicarbazide
12
4-(2-Chlorophenyl)-13-(3-trifluoromethylbenzamido)-benzoyl-thiosemicarbazide
13
4-(2-Chlorophenyl)-1-4-methoxy-3-(3-trifluoromethylbenzamido)-benzoyl-thiosemicarbazide
14
4-(2-Chlorophenyl)-1-2-chloro-3-(3-trifluoromethylbenzamido)-benzoyl-thiosemicarbazide
15
4-(2-Chlorophenyl)-1-2-methyl-3-(3-trifluoromethylbenzamido)-benzoyl-thiosemicarbazide
16
4-(2-Chlorophenyl)-1-3-(4-fluorobenzamido)-benzoyl-thiosemicarbazide
17
1-3-(4-Fluorobenzamido)-benzoyl-4-(2-fluorophenyl)-thiosemicarbazide
18
4-(Ethoxycarbonyl-1-3-(4-fluorobenzamido)-benzoyl-thiosemicarbazide
19
4-(2-Chlorophenyl)-1-2-chloro-3-(4-fluorolbenzamido)-benzoyl-thiosemicarbazide
20
4-(2-Chlorophenyl)-1-3-(4-fluorobenzamido)-2-methylbenzoyl-thiosemicarbazide
21
4-(2-Chlorophenyl)-1-3-(4-fluorobenzamido)-4-methylbenzoyl-thiosemicarbazide
22
4-(2-Chlorophenyl)-1-3-(2,5-difluorobenzamido)-benzoyl-thiosemicarbazide
23
4-(2-Chlorophenyl)-1-3-(3-fluorobenzamido)-benzoyl-thiosemicarbazide
24
4-(2-Chlorophenyl)-1-3-(3,5-difluorobenzamido)-benzoyl-thiosemicarbazide
25
4-(2-Chlorophenyl)-1-3-(3,5-dichlorobenzamido)-benzoyl-thiosemicarbazide
26
4-(2-Chlorophenyl)-1-3-(2,3-difluorobenzamido)-benzoyl-thiosemicarbazide
27
4-(2-Chlorophenyl)-1-3-(3,5-dimethylbenzamido)-benzoyl-thiosemicarbazide
28
4-(2-Chlorophenyl)-1-3-(4-methylbenzamido)-benzoyl-thiosemicarbazide
or a salt thereof.
44. A compound of claim 1 selected from the group consisting of:
1-3-(3-Chlorobenzamido)-benzoyl-4-(2-chlorophenyl)-thiosemicarbazide (compound 2);
1-3-(3-Chlorobenzamido)-2-methylbenzoyl-4-(2-chloro-phenyl)-thiosemicarbazide (compound 4);
1-3-(3-Chlorobenzamido)-benzoyl-4-phenyl-thiosemicarbazide (compound 6);
1-3-(3-Chlorobenzamido)-benzoyl-4-(2-trifluoromethylphenyl)-thiosemicarbazide (compound 7);
1-3-(3-Chlorobenzamido)-benzoyl-4-(2-fluorophenyl)-thiosemicarbazide (compound 9);
4-(2-Chlorophenyl)-1-3-(3-trifluoromethylbenzamido)-benzoyl-thiosemicarbazide (compound 12);
4-(2-Chlorophenyl)-1-2-chloro-3-(3-trifluoromethylbenzamido)-benzoyl-thiosemicarbazide (compound 14);
4-(2-Chlorophenyl)-1-3-(4-fluorobenzamido)-benzoyl-thiosemicarbazide (compound 16);
4-(Ethoxycarbonyl-1-3-(4-fluorobenzamido)-benzoyl-thiosemicarbazide (compound 18);
4-(2-Chlorophenyl)-1-3-(2,5-difluorobenzamido)-benzoyl-thiosemicarbazide (compound 22);
4-(2-Chlorophenyl)-1-3-(3-fluorobenzamido)-benzoyl-thiosemicarbazide (compound 23);
4-(2-Chlorophenyl)-1-3-(3,5-difluorobenzamido)-benzoyl-thiosemicarbazide (compound 24);
4-(2-Chlorophenyl)-1-3-(3,5-dichlorobenzamido)-benzoyl-thiosemicarbazide (compound 25);
4-(2-Chlorophenyl)-1-3-(2,3-difluorobenzamido)-benzoyl-thiosemicarbazide (compound 26);
4-(2-Chlorophenyl)-1-3-(3,5-dimethylbenzamido)-benzoyl-thiosemicarbazide (compound 27);
4-(2-Chlorophenyl)-1-3-(4-methylbenzamido)-benzoyl-thiosemicarbazide (compound 28);
or a salt thereof.
45. A herbicidal composition comprising at least one compound according to claim 1 and an extender or surfactant.
46. A method for controlling undesirable plants comprising applying an effective amount of a compound of claim 1 to said plants or a habitat of said plants.