1. A semiconductor laser device comprising:
a substrate;
a current-blocking layer which has an opening and is formed above said substrate, said current-blocking layer being one of a p-type layer and a semi-insulating layer;
an n-type semiconductor layer formed at least in the opening; and
a light-emitting layer formed above said current-blocking layer.
2. The semiconductor laser device according to claim 1,
wherein a top surface of said semiconductor layer is plane, and
said light-emitting layer is formed on said semiconductor layer, contacting with said semiconductor layer.
3. The semiconductor laser device according to claim 2,
wherein said current-blocking layer has a smaller refractive index than said semiconductor layer.
4. The semiconductor laser device according to claim 3,
wherein said current-blocking layer has an area into which two or more types of impurities are doped.
5. The semiconductor laser device according to claim 4,
wherein said current-blocking layer is made up of layers which have compositions that are different from each other.
6. The semiconductor laser device according to claim 5,
wherein said semiconductor layer includes:
a first semiconductor layer; and
a second semiconductor layer formed on said first semiconductor layer, contacting with said first semiconductor layer,
said first semiconductor layer is formed between said current-blocking layer and said substrate,
said second semiconductor layer is formed between said current-blocking layer and said light-emitting layer, and is formed inside the opening, and
said first semiconductor layer has a higher impurity concentration on a side of said light-emitting layer than on a side of said substrate.
7. The semiconductor laser device according to claim 6,
wherein a composition of said first semiconductor layer is different from a composition of said second semiconductor layer.
8. The semiconductor laser device according to claim 7,
wherein impurity concentrations of said first semiconductor layer and said second semiconductor layer reach a peak at an interface between said first and second semiconductor layers.
9. The semiconductor laser device according to claim 8,
wherein said light-emitting layer and said semiconductor layer are made of a compound semiconductor including nitrogen.
10. The semiconductor laser device according to claim 9,
wherein said current-blocking layer is doped with magnesium.
11. The semiconductor laser device according to claim 10,
wherein a concentration of the magnesium in said current-blocking layer is 1\xd71019cm\u22123 or less.
12. The semiconductor laser device according to claim 11,
wherein said semiconductor layer is made of GaN.
13. The semiconductor laser device according to claim 12,
wherein said light-emitting layer is made of InGaAlN, and
said light-emitting layer has a larger Al composition in an area positioned above said current-blocking layer than in an area positioned above the opening.
14. The semiconductor laser device according to claim 13,
wherein said light-emitting layer has a smaller In composition in the area positioned above said current-blocking layer than in the area positioned above the opening.
15. The semiconductor laser device according to claim 8,
wherein said first semiconductor layer is made of InxGa1-xN, where 0\u2266x\u22661, and
said second semiconductor layer is made of GaN.
16. The semiconductor laser device according to claim 5,
wherein said current-blocking layer is made up of a first AlxGa1-xN layer and a second AlyGa1-yN layer formed on the first AlxGa1-xN layer, where 0\u2266x\u22661, 0\u2266y\u22661 and x<y.
17. The semiconductor laser device according to claim 4,
wherein said current-blocking layer is made of AlxGa1-xN layer, where 0\u2266x\u22661.
18. The semiconductor laser device according to claim 1,
wherein said semiconductor layer functions as a cladding layer, and
said semiconductor laser device further comprises
a light-guiding layer formed between said light-emitting layer and said cladding layer, said light-guiding layer being made of InxGa1-xN, where 0\u2266x\u22661.
19. The semiconductor laser device according to claim 18,
wherein said light-guiding layer has a periodic structure in which InGaN and GaN are periodically arranged.
20. A method of manufacturing a semiconductor laser device, said method comprising:
forming a first semiconductor layer above a substrate, forming a current-blocking layer on the first semiconductor layer;
forming an opening in the current-blocking layer;
forming a second semiconductor layer inside the opening; and
forming a light-emitting layer above the second semiconductor layer.
21. The method of manufacturing the semiconductor laser device according to claim 20,
wherein said forming of the second semiconductor layer includes forming the second semiconductor layer so as to planarize a top surface of the semiconductor layer, and
said forming of the light-emitting layer includes forming the light-emitting layer on the planarized surface of the second semiconductor layer.
22. The method of manufacturing the semiconductor laser device according to claim 21,
wherein said forming of the second semiconductor layer includes planarizing the surface of the second semiconductor layer by one of etching and polishing.
23. The method of manufacturing the semiconductor laser device according to claim 22,
wherein the current-blocking layer has a conductivity type that is one of p-type and semi-insulating type,
said forming of the current-blocking layer includes forming a portion of the current-blocking layer by forming a semiconductor layer in which an impurity is doped on the first semiconductor layer, and forming the rest of the current-blocking layer by forming a semiconductor layer in which an impurity is not doped on the portion of the current-blocking layer.
24. The method of manufacturing the semiconductor laser device according to claim 23,
wherein the light-emitting layer, the first semiconductor layer and the second semiconductor layer are made of a compound semiconductor including nitrogen.
25. The method of manufacturing the semiconductor laser device according to claim 24, said method further comprising
forming a light-guiding layer by forming a semiconductor layer in which InGaN and GaN are periodically arranged between the light-emitting layer and the second semiconductor layer,
wherein said forming of the light-guiding layer includes forming the light-guiding layer by performing crystal growth of the InGaN at a lower temperature than for the GaN.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compressor, comprising:
a casing having an internal space;
a drive comprising a stator fixed in the internal space and a rotor rotatably provided within the stator;
a compression device provided at one side of the drive and having a discharge hole so as to discharge compressed refrigerant into the internal space of the casing;
a rotational shaft configured to transfer a drive force from the drive to the compression device;
a balance weight provided on the rotor or the rotational shaft; and
a passage separator provided between the drive and the compression device to separate a refrigerant passage from an oil passage, wherein the passage separator comprises a first partition wall and a second partition wall, and wherein the first partition wall is disposed between an inner circumferential surface of the casing and the discharge hole of the compression device, and the second partition wall is disposed between the discharge hole and balance weight.
2. The compressor of claim 1, wherein at least one slot around which a coil is wound is formed on the stator, and the first partition wall is disposed at an outside of the at least one slot.
3. The compressor of claim 1, wherein first and second axial ends of the first partition wall are disposed closely adjacent to the compression device and drive, respectively.
4. The compressor of claim 1, wherein a path is formed by the second partition wall at one side of the second partition wall between the drive and the compression device.
5. The compressor of claim 1, wherein at least one of the first partition wall or the second partition wall extends from the compression device.
6. The compressor of claim 1, wherein at least one slot around which a coil is wound is formed on the stator, wherein an insulator is inserted into the slot, and wherein the first partition wall extends from the insulator.
7. The compressor of claim 1, wherein one end of the second partition wall is bent to cover the balance weight.
8. The compressor of claim 1, wherein the compression device further comprises an oil recovery passage that communicates with an oil passage at one side of the compression device.
9. The compressor of claim 8, wherein the first partition wall and second partition wall are connected by a third partition wall, and wherein at least a portion of the oil recovery passage is covered by the third partition wall.
10. The compressor of claim 9, wherein the first partition wall, the second partition wall, and the third partition wall are formed as an integral body.
11. The compressor of claim 10, wherein the integral body is fixed to the compression device.
12. The compressor of claim 8, wherein the oil recovery passage is covered by a member separate from the passage separator.
13. The compressor of claim 8, wherein the oil recovery passage comprises a hole that passes through the compression device.
14. The compressor of claim 1, wherein at least one of the first partition wall or the second partition wall is formed in an annular shape.
15. The compressor of claim 1, wherein the first partition wall and the second partition wall are formed as an integral body.
16. The compressor of claim 15, wherein the integral body is fixed to the compression device.
17. The compressor of claim 1, wherein the first partition wall extends from the stator toward the compression device.
18. The compressor of claim 1, wherein the first partition wall extends higher than the second partition wall.
19. The compressor of claim 1, wherein the first and second partition walls each comprise an annular ring, and wherein the annular rings are connected by a plurality of connectors.
20. A compressor, comprising:
a casing having an internal space;
a drive comprising a stator fixed in the internal space, a cut surface being provided on an outer circumferential surface of the stator to be separated from an inner circumferential surface of the casing, and a rotor rotatably provided within the stator;
a compression device provided at one side of the drive and having a discharge hole so as to discharge compressed refrigerant into an internal space of the casing;
a rotational shaft configured to transfer a drive force from the drive to the compression device; and
a passage separator provided between the drive and the compression device to separate a refrigerant passage from an oil passage, wherein the passage separator comprises a first partition wall and a second partition wall, and wherein the first partition wall is disposed between the discharge hole and the cut surface of the stator, and the second partition wall is disposed between the discharge hole and a gap between the stator and rotor.
21. The compressor of claim 20, further comprising a balance weight disposed on the rotor or the rotational shaft, and wherein the second partition wall is provided between the discharge hole and the balance weight.
22. A compressor, comprising:
a casing having an internal space;
a drive comprising a stator fixed to the internal space, a cut surface being provided on an outer circumferential surface of the stator to be separated from an inner circumferential surface of the casing, and a rotor rotatably provided within the stator;
a compression device provided at one side of the drive and having a discharge hole so as to discharge compressed refrigerant into an internal space of the casing;
a rotational shaft configured to transfer a drive force from the drive to the compression device; and
a passage separator provided between the drive and the compression device to separate a refrigerant passage from an oil passage, wherein the passage separator surrounds at least a portion of the discharge hole and guides compressed refrigerant coming out of the discharge hole in an axial direction of the rotational shaft.
23. The compressor of claim 22, wherein the passage separator is formed in a tube shape to accommodate the discharge hole, and wherein an end of the passage separator on a side adjacent the drive is formed to have a height difference.
24. The compressor of claim 23, wherein the end of the passage separator is formed such that a first surface located at an outer side of the discharge hole with respect to the rotational shaft is formed to be higher than a second surface located at an inner side thereof.
25. The compressor of claim 22, wherein the passage separator is formed in an arcuate cross-sectional shape.