What is claimed is:
1. An apparatus for rotatably driving a floor cloth employed in a suction assembly of a vacuum cleaner, the vacuum cleaner drawing in and collecting air and dust in a dust collecting chamber through an air path connecting a suction assembly to a connecting pipe by a negative pressure generated by an operation of a driving portion that is activated by manipulating a driving switch of a handle portion, the apparatus comprising:
a rotary member rotatably disposed on a lower end of the suction assembly, for supporting the floor cloth cleaning a cleaning surface;
rotary driving means on-off controlled by the manipulation of the driving switch, for supplying a driving force for rotating the rotary member in an on-state; and
power supplying means for supplying an electric signal from the manipulation of the driving switch to the rotary driving means.
2. The apparatus of claim 1, wherein the power supplying means is disposed in a separate space of the connecting pipe that is protected by a protective cover from the air path, and includes a power terminal electrically connected to the driving switch of the handle portion, and a power conductor for electrically connecting the power terminal to the power driving means.
3. The apparatus of claim 1, the rotary driving means includes a bi-directional rotary motor having a pair of rotary shaft portions formed on both sides of the rotary motor and simultaneously rotated with each other by the power supplied from the power supplying means, and a power transmission unit disposed for transmitting the driving force of the rotary shaft portions to the rotary member.
4. The apparatus of claim 3, wherein the power transmission unit includes a pair of worm gear members connected to the rotary shaft portions for being rotated in the same direction as the rotary shaft portions are rotated; and transmission gears meshed with the pair of worm gear members for converting a rotational force of the worm gear members into a perpendicular direction and transmitting the converted rotational force to the rotary member.
5. The apparatus of claim 4, wherein the worm gear members are connected to the rotary shaft portions by joint connecting members, respectively.
6. The apparatus of claim 4, wherein the worm gear members have threads formed on outer circumferences thereof in an opposite direction from each other, for being rotated in the opposite direction when the transmission gears are rotated.
7. The apparatus of claim 3, wherein the power transmission unit includes a transmission gears connected to the rotary member; and a worm gear member having a worm gear portion formed on the outer circumference of the worm gear member for being meshed with the transmission gear, and a key portion formed on one end of the worm gear member for being connected to the rotary shaft portion of the rotary driving means in a key way.
8. The apparatus of claim 7, wherein either the key portion or the rotary shaft portion has a key groove having a non-circular section formed on one end, while either the key portion or the rotary shaft portion without the key groove has a key portion that is formed on one end having corresponding shape to the key groove.
9. The apparatus of claim 7, wherein each of the worm gear members have threads formed on the outer circumference in an opposite direction so that the transmission gears can be rotated in the opposite direction.
10. The apparatus of claim 3, wherein the power transmission unit includes a transmission gears connected to the rotary member; and a worm gear member having a worm gear portion formed on the outer circumference of the worm gear member for being meshed with the transmission gear, and a connecting portion formed on one end of the worm gear member for being screwed to the rotary shaft portion of the rotary driving means.
11. The apparatus of claim 10, wherein either the connecting portion or the rotary shaft portion has a male thread formed on the outer circumference, while either the connecting portion or the rotary shaft portion without the male thread has a female thread formed on the end corresponding to the male thread.
12. The apparatus of claim 10, wherein the threads formed on the connecting portion and the rotary shaft portion are left-hand threads for screw-fastening when the rotary shaft portion is rotated on the rotary shaft in a clockwise direction.
13. The apparatus of claim 10, wherein the threads formed on the connecting portion and the rotary shaft portion are right-hand threads for screw-fastening when the rotary shaft portion is rotated on the rotary shaft in a counterclockwise direction.
14. The apparatus of claim 10, wherein the threads on the outer circumferences of the worm gear members are formed in an opposite direction so that the transmission gears are rotated in the opposite direction.
15. The apparatus of claim 1, further comprising a casing member formed in the suction assembly for enclosing the rotary driving means, thereby screening the rotary driving means from the air path of the suction assembly.
16. The apparatus of claim 15, wherein the casing member has a lower casing having openings formed on a bottom through which the transmission gears are directly connected to the rotary members, respectively, and a plurality of fixing means for rotatably supporting the worm gear members; and an upper casing connected to an upper portion of the lower casing for screening the rotary driving means mounted on the lower casing from the outside.
17. The apparatus of claim 1, further comprising removable means for removably supporting the floor cloth onto the rotary members.
18. The apparatus of claim 17, wherein the removable means includes at least one Velcro fastener disposed on a lower surface of the rotary members in a predetermined pattern.
19. The apparatus of claim 18, wherein the Velcro fastener is seated on a plurality of recesses formed on the lower surface of the rotary members around a center of rotation at a uniform distance from each other.
20. The apparatus of claim 18, wherein the Velcro fastener is disposed on the lower surface of the rotary member around the center of rotation at an angle of 120.
21. A floor cloth removably employed in a mounting portion at a lower end of a suction assembly of a vacuum cleaner, the floor cloth for mopping impurities on a cleaning surface, the floor cloth comprising:
a body contacting the cleaning floor;
a removable layer attached to an upper surface of the body, supportable by a binding force with removable means formed on the mounting portion; and
supporting means for improving cleaning efficiency by preventing deformation of the body and enabling easier contact against the cleaning surface, when the body contacts the cleaning surface.
22. The floor cloth of claim 21, wherein the body and the removable layer are connected with each other by an adhesive.
23. The floor cloth of claim 21, wherein the supporting means includes a supporting member disposed between the body and the removable layer, for recovering the body into an original shape, elastically.
24. The floor cloth of claim 23, wherein the supporting member is formed of a porous material capable of absorbing a liquid during a wet cleaning with respect to the cleaning surface.
25. The floor cloth of claim 21, wherein the supporting means includes a protruding pattern protruding from a lower surface of the body contacting the cleaning surface in a predetermined pattern.
26. The floor cloth of claim 25, wherein the protruding pattern includes a plurality of protruding lines protruding from the lower surface of the body contacting the cleaning surface in a linear pattern.
27. The floor cloth of claim 25, wherein the protruding pattern is formed of a fabric that is identical with the fabric of the body.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-17. (canceled)
18. A method for forming a thin film transistor liquid crystal display (TFT-LCD), the TFT-LCD having at least one thin film transistor (TFT) and one storage capacitor (Cs), the method comprising the steps of:
providing a substrate;
depositing a first conductive layer and a second conductive layer above the substrate to form a gate electrode of the TFT and a bottom electrode of the storage capacitor;
forming an insulating layer on the first and second-conductive layers and the substrate;
depositing a semiconductor layer and a doped silicon layer on the insulating layer;
forming a sacrifice layer with an island shape on the doped silicon layer, and the sacrifice layer being positioned directly above the first conductive layer;
forming a metal layer covering the sacrifice layer and the doped silicon layer;
patterning the metal layer to form a source electrode and a drain electrode above the first conductive layer as well as to form a shielding metal layer above the second conductive layer, a channel being defined between the source electrode and the drain electrode to expose the sacrifice layer in the channel, a capacitor region being defined as a portion of the substrate covered by the shielding metal layer, and a non-TFT region being defined as a portion of the substrate not covered by the source electrode, the drain electrode, the capacitor region, and the channel so as to exposed the doped silicon layer thereon;
using the source electrode, the drain electrode, and the shielding metal layer as a mask to perform the following etching processes at the same time: (a) removing the doped silicon layer and the island-shaped sacrifice layer in the channel so as to expose the semiconductor layer therein, and (b) removing the doped silicon layer and the semiconductor layer in the non-TFT region so as to expose the insulating layer thereon; and
forming a passivation layer to cover the source electrode, the drain electrode, the channel, and the capacitor region.
19. The method of claim 18, wherein during the etching process, etching rates of the island-shaped sacrifice layer, the doped silicon layer, and the semiconductor layer are RIS, Rn, and Ra respectively, the thickness of the island-shaped sacrifice layer, the doped silicon layer, and the semiconductor layer are TIS, Tn, and Ta, and the time for removing the island-shaped sacrifice layer and the doped silicon layer in the channel (TISRIS+TnRn) is not less than the time for removing the doped silicon layer and the semiconductor layer in the non-TFT region (TnRn+TaRa).
20. The method of claim 18 further comprising the following steps:
patterning the passivation layer to form a first hole and a second hole so as to expose one of the source electrode and the drain electrode through the first hole, and expose the shielding metal layer in the capacitor region through the second hole; and
forming a transparent conductive layer above the passivation layer, the transparent conductive layer being electrically connected to one of the source and the drain electrodes through the first hole, as well as electrically connected to the shielding metal layer through the second hole for forming an upper electrode of the storage capacitor.
21-25. (canceled)
26. A method for manufacturing a thin film transistor liquid crystal display (TFT-LCD), the TFT-LCD having at least one thin film transistor (TFT) and one storage capacitor, the method comprising the steps of:
providing a substrate;
depositing first and second conductive layers above the substrate to respectively form a gate electrode of the TFT and a bottom electrode of the storage capacitor;
forming an insulating layer above the first and second conductive layers and the substrate;
forming a semiconductor layer on the insulating layer;
forming a sacrifice layer with an island shape on the semiconductor layer, and the sacrifice layer being positioned directly above the first conductive layer;
depositing a doped silicon layer to cover the sacrifice layer and the semiconductor layer;
forming a metal layer covering the doped silicon layer;
patterning the metal layer to form a source electrode and a drain electrode above the first conductive layer, as well as to form a shielding metal layer above the second conductive layer; a channel being defined between the source electrode and the drain electrode to expose the doped silicon layer therein; a capacitor region being defined as a portion of the substrate covered by the shielding metal layer; and a non-TFT region being defined as the substrate not covered by the source electrode, the drain electrode, the capacitor, and the channel so as to expose the doped silicon layer thereon;
using the source and drain electrodes and the shielding metal layer as a mask to perform these etching processes at the same time: (a) removing the doped silicon layer and the island-shaped sacrifice layer in the channel so as to expose the semiconductor layer in the channel, and (b) removing the doped silicon and semiconductor layers in the non-TFT region to expose the insulating layer therein; and
forming a passivation layer to cover the source electrode, the drain electrode, the channel, and the capacitor region.
27. The method of claim 26, wherein during the etching process, etching rates of the island-shaped sacrifice layer, the doped silicon layer, and the semiconductor layer are RIS, Rn, and Ra respectively; the thickness of the island-shaped sacrifice layer, the doped silicon layer, and the semiconductor layer are TIS, Tn, and Ta; and the time for removing the doped silicon layer and the island-shaped sacrifice layer in the channel (TISRIS+TnRn) is not less than the time for removing the doped silicon layer and the semiconductor layer in the non-TFT region (TnRn+TaRa).
28. The method of claim 27 further comprising the following steps:
forming a first hole and a second hole in the passivation layer so as to expose one of the source and drain electrodes via the first hole, and expose the shielding metal layer via the second hole; and
forming a transparent conductive layer above the passivation layer, the transparent conductive layer being electrically connected to one of the source electrode and the drain electrode through the first hole, as well as electrically connected to the shielding metal through the second hole for forming an upper electrode of the storage capacitor.
29. A thin film transistor (TFT), comprising:
a gate electrode with an island shape formed on a substrate;
an insulating layer covering the gate electrode;
a semiconductor layer with an island shape formed on the insulating layer, and positioned directly above the gate electrode;
a source doped silicon layer and a drain doped silicon layer formed on the semiconductor layer, a channel being defined between the source doped silicon layer and the drain doped silicon layer to expose the semiconductor layer therein;
first and second sacrifice layers with island shapes respectively formed on the source doped silicon layer and drain doped silicon layer, the first and the second sacrifice layers being spaced apart by the channel;
a source electrode formed above the first sacrifice layer and the source dope silicon layer; and
a drain electrode formed above the second sacrifice layer and the drain doped silicon layer;
wherein the thickness of the first and second sacrifice layers varies according to the thickness of the semiconductor layer because the time for etching the first and second sacrifice layers is substantially equal to the time for etching the semiconductor layer in the subsequent process.
30. The TFT in claim 29, wherein during the etching process, the etching rate of the first and the second sacrifice layers is RIS, the etching rate and the thickness of the drain doped silicon and the source doped silicon layers are Rn and Tn, and the etching rate and the thickness of the semiconductor layer are Ra and Ta, and the thickness of the first and the second sacrifice layers TIS meets the equation of (TISRIS+TnRn)\xb0\u0178(TnRn+TaRa).
31. The TFT in claim 29, further comprising a passivation layer covering the source electrode, the drain electrode, and the channel, and the TFT is used in an in-plane-switch (IPS) type LCD.
32. The TFT in claim 29, further comprising:
a passivation layer covering the TFT on the substrate, and having a hole above the drain electrode; and
a transparent conductive layer formed above the drain electrode and electrically connected to the drain electrode via the hole.
33. A thin film transistor (TFT), comprising:
a gate electrode with an island shape formed on a substrate;
an insulating layer covering the gate electrode;
a semiconductor layer with an island shape formed on the insulating layer, and positioned above the gate electrode;
first and second sacrifice layers with island shapes formed on the semiconductor layer, and a channel being defined between the first and second sacrifice layers so as to expose the semiconductor layer;
a source doped silicon layer and a drain doped silicon layer formed above the first sacrifice layer, second sacrifice layer, and the semiconductor layer, the source doped silicon layer and the drain doped silicon layer being spaced apart by the channel; and
a source electrode and a drain electrode respectively formed on the source doped silicon layer and the drain doped silicon layer;
wherein the thickness of the first and second sacrifice layers varies with the thickness of the semiconductor layer because the time for etching the first and second sacrifice layers is substantially equal to the time for etching the semiconductor layer in the subsequent process.
34. The TFT in claim 33, wherein the etching rate of the first and the second island-shaped sacrifice layers is RIS, the etching rate and the thickness of the drain doped silicon and the source doped silicon layers are Rn and Tn, the etching rate and the thickness of the island-shaped semiconductor layer are Ra and Ta, and the thickness of the first and the second island-like sacrifice layers TIS meets the equation of (TISRIS+TnRn)\xb0\u0178 (TnRn+TaRa).
35. The TFT in claim 33, further comprising a passivation layer covering the source electrode, the drain electrode, and the channel, and the TFT is used in an in-plane-switch (IPS) type LCD.
36. The TFT in claim 33 further comprising:
a passivation layer covering the TFT on the substrate, and having a hole above the drain electrode; and
a transparent conductive layer formed above the drain electrode and electrically connected to the drain electrode via the hole.