1. A chemical-mechanical polishing (CMP) composition comprising:
(a) zirconia particles, wherein the zirconia particles are present in the CMP composition at a concentration of about 0.01 wt % to about 5 wt %;
(b) a modifying agent that adheres to the zirconia particles, wherein the modifying agent comprises an aminosilane or a phosphonic acid;
(c) an organic acid comprising an amino acid; and
(d) water.
2. The CMP composition of claim 1, wherein the organic acid is present in the CMP composition at a concentration of about 0.001 wt % to about 5 wt %.
3. The CMP composition of claim 1, wherein the aminosilane is at least one of bis(trimethoxysilylpropyl)amine, aminopropyltrimethoxysilane, (N-methyl-3-aminopropyl)trimethoxysilane, (N,N-dimethyl-3-aminopropyl)trimethoxysilane, (N,N,N-trimethyl-3-aminopropyl)trimethoxysilane, N-(3-triethoxysilylpropyl)-4,5-dihydroimidaxole, and 3-(2-aminoethyl)aminopropyltrimethoxysilane.
4. The CMP composition of claim 1, wherein the modifying agent comprises an aminosilane and an aminoalkylphosphonic acid.
5. The CMP composition of claim 1, wherein the modifying agent is present in the CMP composition at a concentration of about 0.001 wt % to about 5 wt %.
6. The CMP composition of claim 1 further comprising an oxidizing agent.
7. The CMP composition of claim 6, wherein the oxidizing agent is a substance that oxidizes at least one of copper and tantalum.
8. The CMP composition of claim 6, wherein the oxidizing agent is at least one of hydrogen peroxide, ammonium iodate, hydroxylamine, hydroxylpyridine, and ammonium persulfate.
9. The CMP composition of claim 6, wherein the oxidizing agent is present in the CMP composition at a concentration of about 0.01 wt % to about 5 wt %.
10. The CMP composition of claim 1 further comprising about 0.01 wt % to about 5 wt % of a triazole.
11. The CMP composition of claim 1, wherein the composition has a pH from about 3 to about 7.
12. A method of chemically-mechanically polishing a substrate, which method comprises:
(i) contacting a substrate with a polishing pad and the CMP composition of claim 1;
(ii) moving the polishing pad relative to the substrate with the CMP composition therebetween; and
(iii) abrading at least a portion of the substrate to polish the substrate.
13. The method of claim 12, wherein the substrate comprises at least one layer of copper and at least one layer of a silicon dioxide-based dielectric, and at least a portion of the copper layer and at least a portion of the silicon dioxide-based dielectric layer are abraded to polish the substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of producing steel pipes by solid-phase comprising the steps of:
shaping a steel strip with a forming roller to form an open pipe;
induction heating two opposite longitudinal edges of the open pipe to a temperature range below the melting point of the steel;
preforming ends of the edges of the open pipe;
pressure-welding two opposite longitudinal edges of the open pipe with a squeeze roll; and
smoothing a thick walled portion by applying opposing inwardly and outwardly directed radial pressure to the thick walled portion while providing cooling water inside the pipe where the outwardly directed radial pressure is applied.
2. The method of claim 1, wherein the performing step comprises the step of chamfering corners of the ends that are interior to the open pipe.
3. The method of claim 1, wherein the smoothing step comprises the step of positioning a reduction roller inside the pipe support and transmitting a force to the reduction through a connecting rod inside the pipe that the reduction roller translates to the outwardly directed radial pressure.