1. A mounting system for supporting equipment on an underlying surface, the mounting system comprising:
a base that is structured to secure to the underlying surface;
an extension section that includes one or more members, the extension section being connected to the base so as to extend a height from the underlying surface; and
a grasp section that is connected to a top section of the extension section and is structured to secure to a section of the equipment when the equipment is installed on the underlying surface.
2. The mounting system of claim 1, wherein the grasp section is pivotal about the extension section to enable angular adjustment of the section of the equipment that it secures.
3. The mounting system of claim 1, wherein the underlying surface is a rooftop, and wherein the base includes a foot that penetrates at least a section of the rooftop.
4. The mounting system of claim 3, wherein the base includes one or more flashing structures to deter water.
5. The mounting system of claim 1,
wherein the underlying surface is a rooftop, and wherein the base section includes a foot that penetrates at least a section of the rooftop, and
wherein the extension section includes a pipe that connects to the foot by a first type of securement.
6. The mounting system of claim 5, wherein the pipe is pivotally coupled to the grasp section.
7. The mounting system of claim 1,
wherein the underlying surface is a rooftop, and wherein the base section includes a foot that penetrates at least a section of the rooftop, and
wherein the extension section includes a pipe; and
wherein the mounting system further comprises a first wedged-shaped member and a second wedged-shaped member, the first wedged-shaped member extending from the foot, and the second wedged-shaped section being dimensioned to fit within the pipe, wherein the first wedged-shaped section and the second wedged-shaped section combine to secure the pipe to the foot.
8. The mounting system of claim 1,
wherein the underlying surface is a rooftop, and wherein the base section includes a foot that penetrates at least a section of the rooftop, and
wherein the extension section includes a pipe; and
wherein mounting system further comprises a star-shaped clamping sub-system to connect the pipe to the foot.
9. The mounting system of claim 8,
wherein the star-shaped clamping sub-system comprises a star shaped washer and a bolt, wherein the star-shaped washer is structured to mate with the bolt and to expand radially when mated with the bolt;
wherein the bolt is positioned to extend into the foot, and
wherein the star-shaped washer is dimensioned to (i) fit within the pipe until mated, and (ii) to retain the pipe securely with the foot when expanded radially from within the pipe.
10. The mounting system of claim 4, wherein the extension section includes a member on which a skirt is formed to divert water and to form a counter-flash with the one or more flashing structures of the base.
11. The mounting system of claim 1, wherein the extension section comprises a pipe and an adjustable support member, wherein the adjustable support member is pivotally connected to the pipe and is adjustable in a linear dimension to enable a section of the equipment that is being supported to be upwards or downwards.
12. The mounting system of claim 11, wherein the extension section comprises a top section and a bottom section that telescope in order to after the linear dimension.
13. An installed and mounted solar module system comprising:
a solar module array comprising a plurality of solar modules;
a mounting system for supporting the solar module array on an underlying surface, the mounting system providing a plurality of mounting points, wherein at one or more of the plurality of mounting points, the mounting system comprises:
a foot that is structured to secure to the underlying surface;
a pipe coupled to the base so as to extend a height from the underlying surface; and
a grasp that is coupled to a top section of pipe and is structured to secure to a section of the equipment when the equipment is installed on the underlying surface.
14. The installed system of claim 13, wherein the system is installed by adjusting one or more of (i) an angle of the grasp, or (ii) a dimension that the pipe extends from the underlying surface.
15. The installed system of claim 13, wherein the system is installed by first installing the mounting system, and then adjusting one or more components of the installed mounting system to receive the solar module array.
16. A mounting system for supporting solar module array on an underlying surface, the mounting system comprising:
a pipe that couples to a base, the base being provided on the underlying surface, wherein the pipe is coupled to extend a height from the underlying surface; and
a grasp section that is coupled to a top section of the pipe and is structured to secure to a section of the solar module array when the solar module array is installed on the underlying surface.
17. The system of claim 16, further comprising the base, wherein the base is installed into the underlying surface and includes one or more flashing features.
18. The system of claim 17, wherein the grasp section includes a skirt feature that forms a counter-flash for the one or more flashing features of the base.
19. The system of claim 17, wherein the pipe and the base provide or are coupled to a wedged-shaped sub-assembly for enabling the pipe and the base to be coupled to one another.
20. The system of claim 17, wherein the pipe and the base are coupled using a star-shaped washer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
introducing a lanthanum-containing precursor to a substrate, introducing the lanthanum-containing precursor including pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
introducing a hafnium-containing precursor to the substrate.
2. The method of claim 1, wherein forming a dielectric layer containing a lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide layer on a silicon oxide layer to form the dielectric layer as a dielectric stack.
3. The method of claim 1, wherein the method includes forming the dielectric layer as a gate insulator of a transistor in the integrated circuit.
4. The method of claim 1, wherein the method includes forming the dielectric layer as a gate insulator in a CMOS transistor in the integrated circuit.
5. The method of claim 1, wherein the method includes forming the dielectric layer as a dielectric of a capacitor in a dynamic random access memory.
6. The method of claim 1, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer.
7. The method of claim 1, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a lanthanide oxide layer.
8. The method of claim 1, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a hafnium oxide layer.
9. The method of claim 1, wherein the method includes forming a transistor.
10. The method of claim 1, wherein the method includes forming a capacitor.
11. The method of claim 10, wherein forming a capacitor includes forming the dielectric layer as a dielectric of the capacitor formed in an analog integrated circuit.
12. The method of claim 10, wherein forming a capacitor includes forming the dielectric layer as a dielectric of the capacitor formed in a radio frequency integrated circuit.
13. The method of claim 10, wherein forming a capacitor includes forming the dielectric layer as a dielectric of the capacitor formed in a mixed signal integrated circuit.
14. The method of claim 1, wherein the method is a method of forming a memory device.
15. The method of claim 1, wherein the method is a method of forming an electronic system.
16. The method of claim 1, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
17. The method of claim 1, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in different sequences in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
18. The method of claim 1, wherein introducing the lanthanum-containing precursor to a substrate is performed in a lanthanum sequence, introducing a hafnium-containing precursor to the substrate is performed in a hafnium sequence, and an atomic layer deposition cycle to form lanthanum hafnium oxide includes a number of lanthanum sequences and a number of hafnium sequences with the number of lanthanum sequences different from the number of hafnium sequences.
19. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
introducing a hafnium-containing precursor to the substrate.
20. The method of claim 19, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
21. The method of claim 19, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed prior to introducing an oxidizing reactant precursor.
22. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor; and
introducing a hafnium-containing precursor to the substrate.
23. The method of claim 22, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
24. The method of claim 22, wherein the method includes forming the dielectric layer to include a layer of HfO2, a layer of La2O3, or layers of HfO2 and La2O3.
25. A method comprising:
forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
introducing a lanthanum-containing precursor to a substrate, wherein introducing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3 precursor; and
introducing a hafnium-containing precursor to the substrate.
26. The method of claim 25, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
27. The method of claim 25, wherein the method includes doping the lanthanum hafnium oxide layer with a lanthanide other than lanthanum.
28. A method comprising:
forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
pulsing a lanthanum-containing precursor to a substrate, pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor to the substrate; and
forming a connection to couple the memory array to a bus.
29. The method of claim 28, wherein pulsing a hafnium-containing precursor includes a hafnium halide precursor.
30. The method of claim 28, wherein the method is a method of forming a memory device including forming the dielectric layer as a gate insulator of a transistor in the memory device.
31. The method of claim 28, wherein the method is a method of forming a flash memory device including forming the dielectric layer as an inter-gate insulator of a floating gate transistor in the flash memory device.
32. The method of claim 28, wherein the method is a method of forming a memory device including forming the dielectric layer as a dielectric of a capacitor in the memory device.
33. The method of claim 28, wherein the method is a method of forming a dynamic random access memory.
34. The method of claim 28, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
35. The method of claim 28, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in different sequences in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
36. A method comprising:
forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor to a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor to the substrate; and
forming a connection to couple the memory array to a bus.
37. The method of claim 36, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
38. The method of claim 36, wherein the method includes forming the dielectric layer as a nanolaminate dielectric in a NROM flash memory.
39. A method comprising:
forming a memory array in a substrate including forming a dielectric layer containing a lanthanum hafnium oxide layer in an integrated circuit, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor to a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor; and
pulsing a hafnium-containing precursor to the substrate; and
forming a connection to couple the memory array to a bus.
40. The method of claim 39, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
41. The method of claim 39, wherein forming the lanthanum hafnium oxide layer includes forming La2Hf2O7.
42. A method comprising:
providing a controller;
coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer formed using atomic layer deposition, wherein forming the lanthanum hafnium oxide layer using atomic layer deposition includes:
pulsing a lanthanum-containing precursor onto a substrate, pulsing the lanthanum-containing precursor including pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor onto the substrate.
43. The method of claim 42, wherein pulsing a hafnium-containing precursor includes pulsing a hafnium nitrate precursor.
44. The method of claim 42, wherein coupling an integrated circuit to the controller includes coupling a memory device as the integrated circuit.
45. The method of claim 42, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer.
46. The method of claim 42, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a lanthanide oxide layer.
47. The method of claim 42, wherein forming the dielectric layer includes forming the dielectric layer as a nanolaminate having the lanthanum hafnium oxide layer and a hafnium oxide layer.
48. The method of claim 42, wherein providing a controller includes providing a processor.
49. The method of claim 42, wherein coupling an integrated circuit to the controller includes coupling a mixed signal integrated circuit as the integrated circuit.
50. The method of claim 42, wherein the method includes forming an information handling system.
51. The method of claim 42, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
52. The method of claim 42, wherein introducing the lanthanum-containing precursor to a substrate and introducing a hafnium-containing precursor to the substrate are performed in different sequences in a common atomic layer deposition cycle to form lanthanum hafnium oxide.
53. A method comprising:
providing a controller;
coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer arranged as one or more monolayers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor onto a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor; and
pulsing a hafnium-containing precursor onto the substrate.
54. The method of claim 53, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
55. The method of claim 53, wherein the method includes forming a wireless system.
56. A method comprising:
providing a controller;
coupling an integrated circuit to the controller, wherein at least one of the integrated circuit or the controller includes a dielectric layer containing a lanthanum hafnium oxide layer, the lanthanum hafnium oxide layer arranged as one or more monolavers, wherein forming the lanthanum hafnium oxide layer includes:
pulsing a lanthanum-containing precursor onto a substrate, wherein pulsing the lanthanum-containing precursor includes pulsing a La(C11H19O2)3CH3(OCH2CH2)4OCH3 precursor; and
pulsing a hafnium-containing precursor onto the substrate.
57. The method of claim 56, wherein forming the lanthanum hafnium oxide layer includes forming the lanthanum hafnium oxide by a self-limiting mechanism.
58. The method of claim 56, wherein the method includes forming an electro-optic system.