What is claimed is:
1. A manufacturing method of semiconductor device, comprising:
a first step for forming an insulating film over a semiconductor substrate having, at least, silicide film;
a second step for selectively etching said insulating film so as to expose, at least, a part of the surface of the silicide film, wherein said second step for selectively etching undesirably produces an undesirable film on said silicide film; and
a third step for processing by plasma using inert element containing gas in order to remove the undesirable film on said silicide film generated in said second step.
2. The manufacturing method of semiconductor device in accordance with the claim 1, wherein said third step is made such that the undesirable film can be physically removed by inert gas plasma process.
3. The manufacturing method of semiconductor device in accordance with the claim 1, wherein said third step is made such that the undesirable film can be physically and chemically removed by composite gas plasma process, the composite gas including an inert gas and, at least, one selected from the group of oxygen element(O) containing gas, nitrogen element(N) containing gas, oxygen(O2) gas, nitrogen(N2) gas.
4. The manufacturing method of semiconductor device in accordance with the claim 1, wherein said insulating film comprises, at least, one oxide film.
5. The manufacturing method of semiconductor device in accordance with the claim 4, wherein said second step comprises the steps of:
forming a photoresist pattern on the oxide film as an etch mask;
etching the oxide film; and
removing the photoresist pattern.
6. The manufacturing method of semiconductor device in accordance with the claim 5, wherein said undesirable film is an insulating film including, at least, carbon element.
7. The manufacturing method of semiconductor device in accordance with the claim 1, wherein said silicide film is tungsten silicide film and the undesirable film is composed of WOC group material.
8. The manufacturing method of semiconductor device in accordance with the claim 1, wherein the etching in the second step is made by dry etch, and the plasma processing in the third step is performed in-situ in the same equipment where the etching has been performed.
9. The manufacturing method of semiconductor device in accordance with the claim 1, wherein said inert gas is, at least, one selected from the group of Ar, He, Ne and Xe.
10. A manufacturing method of semiconductor device, comprising:
a first step for forming an insulating film over a semiconductor substrate having, at least, silicide film at one part and junction region at another part;
a second step for selectively etching said insulating film so as to expose both the silicide film and the junction region, the etching undesirably producing an undesirable film on said silicide film, and
a third step for processing by plasma using inert element containing gas in order to remove the undesirable film on said silicide film generated in said second step.
11. The manufacturing method of semiconductor device in accordance with the claim 10, wherein said third step is made such that the undesirable film can be physically removed by inert gas plasma process.
12. The manufacturing method of semiconductor device in accordance with the claim 10, wherein said third step is made such that the undesirable film can be physically and chemically removed by composite gas plasma process, the composite gas including an inert gas and, at least, one selected from the group of oxygen element(O) containing gas, nitrogen element(N) containing gas, oxygen(O2) gas, nitrogen(N2) gas.
13. The manufacturing method of semiconductor device in accordance with the claim 10, wherein said silicide film is a tungsten silicide film and the undesirable film is composed of WOC group material.
14. The manufacturing method of semiconductor device in ,accordance with the claim 10, wherein said third step is a plasma processing using Ar and O2.
15. The manufacturing method of semiconductor device in accordance with the claim 10, wherein said third step is performed using at least one of Cl2, NF3 and SF6.
16. The manufacturing method of semiconductor device in accordance with the claim 10, wherein said third step is performed using at least one of Cl2, NF3 and SF6 and at least one of O2, N2 and Ar.
17. A method of manufacturing a semiconductor device comprising the steps of:
forming a gate electrode on a semiconductor substrate, wherein said gate electrode includes a silicide film at the uppermost portion thereof;
forming a sourcedrain region on the semiconductor substrate;
forming an interlayer insulating film over the entire surface of semiconductor structure including said gate electrode and said sourcedrain region;
selectively etching said interlayer insulating film to form contact holes that expose the surface of the silicide film of the gate electrode and the sourcedrain region, wherein the selectively etching for forming the contact holes also makes an undesirable side effective film on the silicide film; and
performing a plasma treatment using a gas that does not include any carbon element, in order to remove the side effective film on the silicide film.
18. The method of the claim 17, wherein the gas used in the step for performing a plasma treatment is composed of Ar and O2.
19. The method of the claim 17, wherein the gas used in the step for performing a plasma treatment is composed of at least one of Cl2, NE3 and SF6. 20. The method of the claim 17, wherein the gas used in the step for performing a plasma treatment is composed of at least one of Cl2, NF3 and SF6 and at least one of O2, N2 and Ar.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for filling a subterranean void, the method comprising:
injecting a foam-fluidized granular fill material into the void and leaving the granular material in the void, the injecting being at an injection point beneath a surface of water within the void, wherein the foam-fluidized granular fill material is injected at a velocity sufficient for the foam-fluidized granular fill material to expand laterally within the void at least two times more than if the granular fill material was not foam-fluidized and to displace the water, and wherein foam within the foam-fluidized granular fill material dissipates, rather than being removed from the void, as the foam-fluidized granular fill material expands laterally within the void, thus self-compacting the granular fill material.
2. The method of claim 1, wherein the density of the foam-fluidized granular fill material is greater than the density of the water.
3. The method of claim 1, further comprising:
drilling a hole from a surface to access the void.
4. The method of claim 3, further comprising:
inserting an injection tube through the hole in the void, wherein a distal end of the injection tube extends beneath the surface of the water, and wherein the injection operation is performed using the injection tube.
5. The method of claim 4, further comprising:
monitoring pressure of the foam-fluidized granular fill material within the injection tube; and
withdrawing the injection tube an incremental distance if the pressure rises above a predetermined maximum.
6. The method of claim 4, further comprising:
monitoring flow rate of the foam-fluidized granular fill material within the injection tube; and
withdrawing the injection tube an incremental distance if the flow rate drops below a minimum flow rate.
7. The method of claim 1, further comprising:
collecting the water displaced by the injected foam-fluidized granular fill material.
8. The method of claim 1, wherein the foam-fluidized granular fill material is a homogeneous mixture of at least granular solid fill material, a surfactant, and air.
9. The method of claim 8, wherein the granular solid fill material is sand.
10. The method of claim 1, wherein the void contains a second liquid below the water, wherein the second liquid has a density greater than the water, and wherein the foam-fluidized granular fill material expands laterally between the water and the second liquid and displaces the water.
11. The method of claim 10, wherein the density of the foam-fluidized granular fill material is greater than the density of the water and less than the density of the second liquid.
12. The method of claim 1, wherein the foam-fluidized granular fill material becomes less fluid and more compacted as it expands laterally within the void.
13. The method of claim 1, wherein the injection operation is gravity-driven or pressure-driven.
14. The method of claim 1, wherein the foam-fluidized granular fill material expands laterally at least 2.5 times more than if the granular fill material was not foam-fluidized.
15. A method of filling a submerged void comprising:
drilling a hole from a surface to access the submerged void;
inserting an injection tube from the surface and through the hole, wherein a distal end of the injection tube extends beneath a surface of a liquid within the submerged void;
injecting a foam-fluidized granular fill material with a density greater than that of the liquid into the submerged void through the injection tube at a velocity sufficient for the foam-fluidized granular fill material to expand laterally at least two times more than if the granular fill material was not foam-fluidized and to displace the liquid, with the foam within the foam-fluidized granular fill material dissipating, rather than being removed from the void, as the foam-fluidized granular fill material expands laterally within the void, thus self-compacting the granular fill material; and
leaving the self-compacted granular material in the void.
16. The method of claim 15, further comprising:
collecting the liquid displaced by the injected foam-fluidized granular fill material.
17. The method of claim 15, wherein the liquid is discharged from the void via the drilled hole.
18. A method comprising:
calculating a maximum hole spacing for filling a submerged void;
drilling two or more holes from a surface to access the submerged void, wherein the holes are spaced no further apart than the calculated maximum hole spacing;
inserting an injection tube from the surface and through each of the holes, wherein a distal end of each of the injection tubes extends beneath a surface of a liquid within the submerged void; and
injecting a foam-fluidized granular fill material with a density greater than that of the liquid into the submerged void through the injection tubes at a velocity sufficient for the foam-fluidized granular fill material to expand laterally at least two times more than if the granular fill material was not foam-fluidized and to displace the liquid, with the foam within the foam-fluidized granular fill material dissipating, rather than being removed from the void, as the foam-fluidized granular fill material expands laterally within the void, thus self-compacting the granular fill material; and
leaving the self-compacted granular material in the void.
19. The method of claim 18, further comprising:
collecting the liquid displaced by the injected foam-fluidized granular fill material.
20. The method of claim 18, wherein the liquid is discharged from the void via one or more of the drilled holes.