1. A non-transitory computer-readable information storage media having stored thereon instructions, that if executed by a processor, cause to be performed a method for allocating shared memory in a transceiver comprising:
transmitting or receiving, by the transceiver, a message during initialization specifying a maximum number of bytes of memory that are available to be allocated to an interleaver;
determining, at the transceiver, an amount of memory required by the interleaver to interleave a first plurality of Reed Solomon (RS) coded data bytes within a shared memory;
allocating, in the transceiver, a first number of bytes of the shared memory to the interleaver to interleave the first plurality of Reed Solomon (RS) coded data bytes for transmission at a first data rate, wherein the allocated memory for the interleaver does not exceed the maximum number of bytes specified in the message;
allocating, in the transceiver, a second number of bytes of the shared memory to a deinterleaver to deinterleave a second plurality of RS coded data bytes received at a second data rate; and
interleaving the first plurality of RS coded data bytes within the shared memory allocated to the interleaver and deinterleaving the second plurality of RS coded data bytes within the shared memory allocated to the deinterleaver, wherein the shared memory allocated to the interleaver is used at the same time as the shared memory allocated to the deinterleaver.
2. The media of claim 1, wherein the determining is based on an impulse noise protection requirement.
3. The media of claim 1, wherein the determining is based on a latency requirement.
4. The media of claim 1, wherein the determining is based on a bit error rate requirement.
5. A non-transitory computer-readable information storage media having stored thereon instructions, that if executed by a processor, cause to be performed a method for allocating shared memory in a transceiver comprising:
transmitting or receiving, by the transceiver, a message during initialization specifying a maximum number of bytes of memory that are available to be allocated to a deinterleaver;
determining, at the transceiver, an amount of memory required by the deinterleaver to deinterleave a first plurality of Reed Solomon (RS) coded data bytes within a shared memory;
allocating, in the transceiver, a first number of bytes of the shared memory to the deinterleaver to deinterleave a first plurality of Reed Solomon (RS) coded data bytes for transmission at a first data rate, wherein the allocated memory for the deinterleaver does not exceed the maximum number of bytes specified in the message;
allocating, in the transceiver, a second number of bytes of the shared memory to an interleaver to interleave a second plurality of RS coded data bytes received at a second data rate; and
deinterleaving the first plurality of RS coded data bytes within the shared memory allocated to the deinterleaver and interleaving the second plurality of RS coded data bytes within the shred memory allocated to the interleaver, wherein the shared memory allocated to the deinterleaver is used at the same time as the shared memory allocated to the interleaver.
6. The media of claim 5, wherein the determining is based on an impulse noise protection requirement.
7. The media of claim 5, wherein the determining is based on a latency requirement.
8. The media of claim 5, wherein the determining is based on a bit error rate requirement.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A block copolymer (M) suitable for toughening a thermoset resin (R), said block copolymer (M) having one or more segments of a thermoplastic aromatic polymer (A) chemically linked to one or more segments of a low Tg polymer (B) wherein:
(i) the low Tg polymer (B) exhibits a Tg in the range of from about \u2212130\xb0 C. to about +40\xb0 C.;
(ii) the one or more segments of aromatic polymer (A) is soluble in uncured thermoset resin precursor(s) (P) of said thermoset resin (R),
(iii) the one or more segments of low Tg polymer (B) is insoluble in the uncured thermoset resin precursor(s) (P),
(iv) the aromatic polymer (A) is a polyarylsulphone comprising ether-linked repeating units, the units being selected from:
\u2014ArSO2Arn\u2014
and optionally from:
\u2014Ara\u2014
wherein:
Ar is phenylene;
n=1 to 2 and can be fractional;
a=1 to 3 and can be fractional and when a exceeds 1, said phenylene groups are linked linearly through a single chemical bond or a divalent group other than \u2014SO2\u2014, or are fused together,
provided that the repeating unit \u2014ArSO2Arn\u2014 is always present in the polyarylsulphone in such a proportion that on average at least two of said \u2014ArSO2Arn\u2014 units are in sequence in each polymer chain present,
and wherein the polyarylsulphone has one or more reactive pendant or end group(s),
(v) the low Tg polymer (B) is selected from saturated aliphatic polyesters derived from at least divalent linear, branched or cyclic aliphatic alcohols having from 2 to 60 carbon atoms, and at least divalent linear, branched or cyclic aliphatic carboxylic acids having from 3 to 60 carbon atoms, with the proviso that at least one of the alcohol or the acid components has at least 4 carbon atoms.
2. A block copolymer according to claim 1 wherein the aromatic polymer (A) has a Tg of at least 160\xb0 C.
3. A block copolymer according to claim 1, wherein at least one of the aliphatic alcohol component and the aliphatic acid component has from 20 to 60 carbon atoms.
4. A block copolymer according to claim 1, wherein the diacids are selected from dimer fatty acids having from 12 to 48 carbon atoms; andor the alcohols are selected from dihydric alcohols having from 2 to 6 carbon atoms.
5. A block copolymer according to claim 1, wherein the one or more reactive pendant or end group(s) of the polyarylsulphone isare amino group(s), and polymer (B) is functionalised with hydroxyl or amino groups.
6. A block copolymer according to claim 1, wherein the block copolymer (M) comprises:
(i) the aromatic polymer (A) in a mass fraction w(A) of from 5% to 99%, and correspondingly,
(ii) the low Tg polymer (B) in a mass fraction w(B) of from 95% to 1%,
wherein w(A) and w(B) are calculated as
w(A)=m(A)m(M)
w(B)=m(B)m(M)
wherein
m(A) is the mass of the aromatic polymer A;
m(B) is the mass of the low Tg polymer B; and
m(M) is the mass of the block copolymer M.
7. A block copolymer according to claim 6, wherein w(A)>w(B), and in one embodiment wherein w(A) is from 60 to 80% and w(B) is from 40 to 20%.
8. A block copolymer according to claim 1, wherein the number average molar mass Mn of the block copolymer is in the range of from 3,000 to 150,000 gmol.
9. A block copolymer according to claim 1, wherein the number average molar mass Mn of the aromatic polymer (A) is in the range from 2,000 to 60,000, and the number average molar mass Mn of the of the low Tg polymer (B) is in the range of from 1,000 to 30,000 gmol.
10. A curable polymer composition comprising the block copolymer (M) of claim 1, one or more uncured thermoset resin precursors (P), and a curing agent therefor.
11. The composition of claim 10, wherein the one or more precursors (P) are selected from one or more epoxy resin precursors.
12. The composition of claim 11, wherein the epoxy resin precursors are selected from:
(i) glycidyl ethers of bisphenol A, bisphenol F, dihydroxydiphenyl sulphone, dihydroxybenzophenone, and dihydroxy diphenyl;
(ii) epoxy resins based on Novolacs; and
(iii) glycidyl functional reaction products of m- or p-aminophenol, m- or p-phenylene diamine, 2,4-, 2,6- or 3,4-toluylene diamine, 3,3\u2032- or 4,4\u2032-diaminodiphenyl methane, and blends thereof.
13. The composition of claim 10, wherein the amount of block copolymer (M) is such that the mass fraction w(M) is from 0.5% to 40%, wherein:
w(M)=m(M)m,
where m(M) is the mass of the block copolymer present in a toughened thermoset resin composition having the mass m.
14. A composite material comprising the curable polymer composition of claim 10 and reinforcing fibres.