1. A method, comprising:
determining whether a first network element with which a second network element is attempting to establish an adjacency is a client type element;
if the first network element is determined to be a client type element, determining whether the first and second network elements are in a same network area;
if the first network element is a client type element and the first and second network elements are determined to be in the same network area, establishing the adjacency; and
determining whether the first network element comprises an inter-area forwarder (IAF).
2. The method of claim 1, wherein if the first network element comprises the IAF, the method further comprises processing a message from the IAF and sending inter-area routes and intra-area routes to the IAF.
3. The method of claim 1, wherein if the first network element does not comprise the IAF, the method further comprises processing host routes from the first network element and sending routes pointing to a particular IAF.
4. The method of claim 3, wherein the routes pointing to the particular IAF comprise default routes.
5. The method of claim 3, wherein the routes pointing to the particular IAF comprise subnet routes.
6. The method of claim 1, wherein if the first network element is a client type element and the first and second network elements are determined to be in different network areas, the method further comprises prohibiting the adjacency from being established.
7. The method of claim 1, further comprising:
determining whether the first and second network elements are in different network areas; and
establishing an adjacency between the first and second network elements.
8. The method of claim 7, further comprising:
exchanging inter-area routes and replacing original nexthops in routing tables of the first and second network elements with IAFs.
9. Logic encoded in one or more non-transitory tangible media that includes code for execution and when executed by a processor is operable to perform operations comprising:
determining whether a first network element with which a second network element is attempting to establish an adjacency is a client type element;
if the first network element is determined to be a client type element, determining whether the first and second network elements are in a same network area;
if the first network element is a client type element and the first and second network elements are determined to be in the same network area, establishing the adjacency; and
determining whether the first network element comprises an inter-area forwarder (IAF).
10. The logic of claim 9, the operations further comprising, wherein if the first network element comprises the IAF, processing a message from the IAF and sending inter-area routes and intra-area routes to the IAF.
11. The logic of claim 9, the operations further comprising, wherein if the first network element does not comprise the IAF, processing host routes from the first network element and sending to subnet routes or default routes pointing to a particular IAF.
12. The logic of claim 9, the operations further comprising, wherein if the first network element is a client type element and the first and second network elements are determined to be in different network areas, prohibiting the adjacency from being established.
13. The logic of claim 9 further comprising, the operations further comprising determining whether the first and second network elements are in different network areas and if so, establishing an adjacency between the first and second network elements.
14. The logic of claim 13, the operations further comprising:
exchanging inter-area routes and replacing original nexthops in routing tables of the first and second network elements with IAFs.
15. An apparatus comprising:
a memory element configured to store data;
a processor operable to execute instructions associated with the data; and
an area awareness module operable to interface with the memory element and the processor such that the apparatus is configured to:
determine whether a first network element with which a second network element is attempting to establish an adjacency is a client type element;
determine whether the first and second network elements are in a same network area, if the first network element is determined to be a client type element;
establish the adjacency, if the first network element is a client type element and the first and second network elements are determined to be in the same network area; and
determine whether the first network element comprises an inter-area forwarder (IAF).
16. The apparatus of claim 15, wherein the apparatus is further configured to:
process a message from the IAF and send inter-area routes and intra-area routes to the IAF if the first network element comprises the IAF.
17. The apparatus of claim 15, wherein the apparatus is further configured to:
process host routes from the first network element and send routes pointing to a particular IAF if the first network element does not comprise the IAF.
18. The apparatus of claim 15, wherein the apparatus is further configured to:
determine whether the first and second network elements are in different network areas, and if so, establish an adjacency between the first and second network elements.
19. The apparatus of claim 18, wherein the apparatus is further configured to:
exchange inter-area routes and replace original nexthops in routing tables of the first and second network elements with IAFs.
20. The method of claim 15, wherein the apparatus comprises one of a leaf switch, a spine switch, and a route reflector (RR), and wherein the second network element comprises an RR.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, comprising:
providing a gallium-containing nitride crystal, wafer, or device, wherein the crystal, wafer, or device comprises gallium and nitrogen, has a wurtzite crystal structure, and comprises a first surface having a crystallographic orientation that is miscut from a {10-10} m-plane by between about 0.01 degrees and about 60 degrees toward a 000-1 \u2212c-direction and by up to about 10 degrees toward an orthogonal <1-210> a-direction;
preparing an etchant composition;
processing the gallium-containing nitride crystal, wafer, or device in the etchant composition at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours, wherein the processing temperature and time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers;
removing the gallium-containing nitride crystal, wafer, or device from the etchant composition; and
quantifying a concentration of at least one of etch pits and etch grooves,
wherein quantifying the concentration of etch pits is performed by counting a number of the etch pits within a field of view; and quantifying the concentration of etch grooves is performed by calculating a total length of the etch grooves within a field of view.
2. The method of claim 1, wherein the etchant composition comprises one or more of NaOH and KOH.
3. The method of claim 1, wherein the etchant composition comprises a solution of one or more of H3PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4.
4. The method of claim 3, wherein the etchant composition is prepared by conditioning of reagent-grade phosphoric acid to form polyphosphoric acid.
5. The method of claim 1, wherein the first surface has been prepared by chemical-mechanical polishing prior to performing the etch treatment.
6. The method of claim 1, further comprising protecting one or more surfaces of the gallium-containing nitride crystal using one or more of an etch-resistant tape, clamping an end or face of a crystal against an etch-resistant material, and coating with a paint comprising an etch-resistant material.
7. The method of claim 1, further comprising preparing a second surface that is substantially parallel to the first surface, wherein both the first surface and the second surface are chemical-mechanically polished, and processing both the first surface and the second surface in the etchant composition simultaneously.
8. The method of claim 1, wherein the gallium-containing nitride crystal, wafer, or device has been grown in an m-direction, the first surface is miscut from a {10-10} m-plane by between about 1 degree and about 5 degrees toward a 000-1 \u2212c-direction and by up to about 5 degrees toward an orthogonal <1-210> a-direction, and the concentration of at least one of threading dislocations and stacking faults is determined as a function of distance from the m-plane growth surface.
9. The method of claim 1, wherein the first surface has a crystallographic orientation that is miscut from a {10-10} m-plane by between about 0.05 degree and about 60 degrees toward a 000-1 \u2212c-direction and by up to about 10 degrees toward an orthogonal <1-210> a-direction.
10. A method for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, comprising:
providing a gallium-containing nitride crystal, wafer, or device, wherein the crystal, wafer, or device comprises gallium and nitrogen, has a wurtzite crystal structure, and comprises a surface having a crystallographic orientation within 5 degrees of a (0001) +c-plane;
preparing a first etchant composition;
processing the gallium-containing nitride crystal, wafer, or device in the first etchant composition at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 30 seconds and about 5 hours, wherein the processing temperature and time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers;
removing the gallium-containing nitride crystal, wafer, or device from the first etchant composition;
quantifying a concentration of at least one of etch pits and etch grooves on a (0001) +c-plane surface;
preparing a vicinal m-plane surface on the gallium-containing nitride crystal, wafer, or device, the vicinal m-plane surface having a crystallographic orientation that is miscut from a {10-10} m-plane by between about 0.01 degree and about 5 degrees toward a 000-1 \u2212c-direction and by up to about 10 degrees toward an orthogonal <1-210> a-direction;
preparing a second etchant composition;
processing the gallium-containing nitride crystal gallium-containing nitride crystal, wafer, or device in the second etchant composition at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours, wherein the processing temperature and time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers on the vicinal m-plane surface;
removing the gallium-containing nitride crystal gallium-containing nitride crystal, wafer, or device from the second etchant composition; and
quantifying a concentration of at least one of etch pits and etch grooves on the vicinal m-plane surface,
wherein quantifying the concentration of etch pits is performed by counting a number of the etch pits within a field of view; and quantifying the concentration of etch grooves is performed by calculating a total length of the etch grooves within the field of view.
11. The method of claim 10, wherein the first etchant composition comprises one or more of NaOH and KOH and the gallium-containing nitride crystal, wafer, or device is processed in the first etchant composition at a temperature between about 170 degrees Celsius and about 500 degrees Celsius for a time between about five minutes and about five hours.
12. The method of claim 10, wherein the second etchant composition is a solution comprising one or more of H3PO4, H3PO4 that has been conditioned by prolonged heat treatment to form polyphosphoric acid, and H2SO4.
13. The method of claim 12, wherein the second etchant composition is prepared by conditioning of reagent-grade phosphoric acid to form polyphosphoric acid, increasing its boiling point.
14. The method of claim 10, wherein the vicinal m-plane surface has been prepared by chemical-mechanical polishing prior to performing the etch treatment.
15. The method of claim 10, further comprising protecting one or more surfaces of the gallium-containing nitride crystal using one or more of an etch-resistant tape, clamping an end or face of a crystal against an etch-resistant material, and coating with a paint comprising an etch-resistant material.
16. A method for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, comprising:
providing a gallium-containing nitride crystal, wafer, or device, wherein the crystal, wafer, or device comprises gallium and nitrogen, has a wurtzite crystal structure, and comprises a surface having a crystallographic orientation that is miscut from a {10-10} m-plane by between about \u22121 degree and about +60 degrees toward a 000-1 \u2212c-direction and by up to about 10 degrees toward an orthogonal <1-210> a-direction;
preparing an etchant composition; the etchant composition comprising a solution prepared by conditioning of reagent-grade phosphoric acid to form polyphosphoric acid, increasing its boiling point;
processing the gallium-containing nitride crystal, wafer, or device in the etchant composition at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours, wherein the processing temperature and time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers;
removing the gallium-containing nitride crystal, wafer, or device from the etchant composition; and
quantifying a concentration of at least one of etch pits and etch grooves,
wherein quantifying the concentration of etch pits is performed by counting a number of the etch pits within a field of view; and quantifying the concentration of etch grooves is performed by calculating a total length of the etch grooves within the field of view.
17. The method of claim 16, further comprising protecting one or more surfaces of the gallium-containing nitride crystal using one or more of an etch-resistant tape, clamping an end or face of a crystal against an etch-resistant material, and coating with a paint comprising an etch-resistant material.
18. The method of claim 16, wherein the surface having a crystallographic orientation that is miscut from a {10-10} m-plane by between about \u22121 degree and about +60 degrees toward a 000-1 \u2212c-direction and by up to about 10 degrees toward an orthogonal <1-210> a-direction has been prepared by chemical-mechanical polishing prior to performing etch treatment.
19. A method for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, comprising:
providing a gallium-containing nitride crystal, wafer, or device, wherein the crystal, wafer, or device comprises gallium and nitrogen, has a wurtzite crystal structure, and comprises a surface having a crystallographic orientation within 5 degrees of a (0001) +c-plane;
preparing a first etchant composition;
processing the gallium-containing nitride crystal, wafer, or device in the first etchant composition at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours, wherein the processing temperature and time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers;
removing the gallium-containing nitride crystal, wafer, or device from the first etchant composition;
quantifying a concentration of at least one of etch pits and etch grooves on a (0001) +c-plane surface;
preparing a vicinal m-plane surface on the gallium-containing nitride crystal, wafer, or device, the vicinal m-plane surface having a crystallographic orientation that is miscut from a {10-10} m-plane by between about 0.05 degree and about 5 degrees toward a 000-1 \u2212c-direction and by up to about 5 degrees toward an orthogonal <1-210> a-direction;
preparing a second etchant composition;
processing the gallium-containing nitride crystal gallium-containing nitride crystal, wafer, or device in the second etchant composition at a temperature between about 100 degrees Celsius and about 500 degrees Celsius for a time between about 5 minutes and about 5 hours, wherein the processing temperature and time are selected so as to cause formation of etch pits with diameters between about 1 micrometer and about 25 micrometers on the vicinal m-plane surface;
removing the gallium-containing nitride crystal gallium-containing nitride crystal, wafer, or device from the second etchant composition; and
quantifying the concentrations of at least one of etch pits and etch grooves on the vicinal m-plane surface,
wherein quantifying the concentration of etch pits is performed by counting a number of the etch pits within a field of view; and quantifying the concentration of etch grooves is performed by calculating a total length of the etch grooves within the field of view.
20. The method of claim 19, wherein the vicinal m-plane surface has been prepared by chemical-mechanical polishing prior to performing the etch treatment.