1. Radio frequency (RF) circuitry comprising:
non-volatile memory having fusible links wherein the non-volatile memory is programmable by the fusible links and the fusible links are configured in accordance with design for testability (DFT) configuration data that is provided during manufacturing;
DFT circuitry adapted to provide at least one DFT control signal based on the DFT configuration data; and
RF transmitter circuitry adapted to:
select at least one transmitter parameter of the RF transmitter circuitry based on the at least one DFT control signal;
receive an RF transmit input signal; and
provide an RF transmit output signal based on amplifying the RF TX input signal and based on the at least one transmitter parameter.
2. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a power amplifier having a low power mode and a high power mode, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the low power mode and the high power mode during normal operation.
3. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a power amplifier having bias circuitry, which provides a plurality of output power ranges from the power amplifier, such that to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of output power ranges during normal operation.
4. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises impedance matching and load compensation circuitry, which provides a plurality of maximum delivered output power to minimum delivered output power ratios under a plurality of loading conditions, such that to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of ratios during normal operation.
5. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a power amplifier and a switching power supply adapted to provide one of a plurality of nominal supply voltages to the power amplifier, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of nominal supply voltages during normal operation.
6. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a power amplifier and a switching power supply adapted to provide a supply voltage, which has a plurality of supply voltage accuracies to the power amplifier, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of supply voltage accuracies during normal operation.
7. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a switching power supply adapted to operate at one of a plurality of nominal switching frequencies, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of nominal switching frequencies during normal operation.
8. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a switching power supply adapted to operate at a switching frequency having a plurality of switching frequency accuracies, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of switching frequency accuracies during normal operation.
9. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a switching power supply comprising a plurality of selectively enabled switching transistor segments, which are allowed to be disabled, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select at least one of the plurality of switching transistor segments during normal operation.
10. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a switching power supply comprising at least one diode element coupled in parallel with at least one switching transistor element, which is allowed to be disabled, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select at least one of the at least one switching transistor element during normal operation.
11. The RF circuitry of claim 1 wherein the RF transmitter circuitry comprises a switching power supply comprising frequency dithering circuitry having a plurality of frequency dithering configurations, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of frequency dithering configurations during normal operation.
12. The RF circuitry of claim 1 wherein to select the at least one transmitter parameter compensates for manufacturing variations in the RF transmitter circuitry.
13. The RF circuitry of claim 1 wherein to select the at least one transmitter parameter configures the RF transmitter circuitry for a specific application.
14. The RF circuitry of claim 1 wherein the DFT circuitry is further adapted to:
receive a DFT communications input signal from manufacturing test equipment during manufacturing; and
program the fusible links of the non-volatile memory during manufacturing with the DFT configuration data, which is provided by the DFT communications input signal.
15. The RF circuitry of claim 14 wherein the DFT communications input signal is a serial communications signal.
16. The RF circuitry of claim 14 wherein the DFT circuitry comprises at least one node, which is adapted to share the DFT communications input signal with at least one other signal.
17. The RF circuitry of claim 14 wherein:
the DFT circuitry further comprises at least one DFT register, which is programmed with the DFT configuration data during manufacturing based on the DFT communications input signal;
the at the least one DFT control signal is further based on the DFT configuration data stored in the at least one DFT register; and
to select the at least one transmitter parameter of the RF transmitter circuitry is further based on the at least one DFT control signal, which is based on the DFT configuration data stored in the at least one DFT register.
18. The RF circuitry of claim 17 wherein the DFT circuitry is further adapted to provide a DFT communications output signal to the manufacturing test equipment during manufacturing based on contents of at least one of the at least one DFT register and the non-volatile memory.
19. The RF circuitry of claim 17 wherein the DFT circuitry is further adapted to:
receive at least one measurement signal during manufacturing from the RF transmitter circuitry based on the at least one transmitter parameter; and
provide at least one of the at least one measurement signal during manufacturing to the manufacturing test equipment.
20. The RF circuitry of claim 17 wherein the DFT circuitry is further adapted to provide a DFT communications output signal to the manufacturing test equipment during manufacturing based on contents of at least one of the at least one DFT register and the non-volatile memory.
21. The RF circuitry of claim 1 wherein the RF circuitry is provided by a single semiconductor die.
22. The RF circuitry of claim 1 wherein the RF circuitry is provided by at least one semiconductor die mounted to a common substrate.
23. The RF circuitry of claim 1 wherein the RF circuitry is used to form an RF transmitter module.
24. A method comprising:
providing design for testability (DFT) configuration data to non-volatile memory having fusible links during manufacturing by configuring the fusible links;
providing at least one DFT control signal based on the DFT configuration data;
selecting transmitter parameters of radio frequency (RF) transmitter circuitry based on the at least one DFT control signal;
receiving an RF transmit (TX) input signal; and
providing an RF TX output signal based on amplifying the RF TX input signal and based on the transmitter parameters.
25. Radio frequency (RF) circuitry comprising:
non-volatile memory having design for testability (DFT) configuration data that is provided during manufacturing;
DFT circuitry adapted to provide at least one DFT control signal based on the DFT configuration data; and
RF transmitter circuitry adapted to:
select at least one transmitter parameter of the RF transmitter circuitry based on the at least one DFT control signal;
receive an RF transmit input signal;
provide an RF transmit output signal based on amplifying the RF TX input signal and based on the at least one transmitter parameter; and
wherein the RF transmitter circuitry comprises impedance matching and load compensation circuitry, which provides a plurality of maximum delivered output power to minimum delivered output power ratios under a plurality of loading conditions, such that to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of ratios during normal operation.
26. Radio frequency (RF) circuitry comprising:
non-volatile memory having design for testability (DFT) configuration data that is provided during manufacturing;
DFT circuitry adapted to provide at least one DFT control signal based on the DFT configuration data; and
RF transmitter circuitry adapted to:
select at least one transmitter parameter of the RF transmitter circuitry based on the at least one DFT control signal;
receive an RF transmit input signal;
provide an RF transmit output signal based on amplifying the RF TX input signal and based on the at least one transmitter parameter; and
wherein the RF transmitter circuitry comprises a switching power supply comprising at least one diode element coupled in parallel with at least one switching transistor element, which is allowed to be disabled, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select at least one of the at least one switching transistor element during normal operation.
27. Radio frequency (RF) circuitry comprising:
non-volatile memory having design for testability (DFT) configuration data that is provided during manufacturing;
DFT circuitry adapted to provide at least one DFT control signal based on the DFT configuration data wherein the DFT circuitry further comprises:
at least one DFT register, which is programmed with the DFT configuration data during manufacturing based on the DFT communications input signal;
the at the least one DFT control signal is further based on the DFT configuration data stored in the at least one DFT register;
RF transmitter circuitry adapted to:
receive a DFT communications input signal from manufacturing test equipment during manufacturing;
program the non-volatile memory during manufacturing with the DFT configuration data, which is provided by the DFT communications input signal;
select at least one transmitter parameter of the RF transmitter circuitry based on the at least one DFT control signal;
receive an RF transmit input signal; and
provide an RF transmit output signal based on amplifying the RF TX input signal and based on the at least one transmitter parameter.
28. Radio frequency (RF) circuitry comprising:
non-volatile memory having design for testability (DFT) configuration data that is provided during manufacturing;
DFT circuitry adapted to provide at least one DFT control signal based on the DFT configuration data; and
RF transmitter circuitry adapted to:
select at least one transmitter parameter of the RF transmitter circuitry based on the at least one DFT control signal;
receive an RF transmit input signal;
provide an RF transmit output signal based on amplifying the RF TX input signal and based on the at least one transmitter parameter; and
wherein the RF transmitter circuitry comprises a power amplifier and a switching power supply adapted to provide one of a plurality of nominal supply voltages to the power amplifier, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of nominal supply voltages during normal operation.
29. Radio frequency (RF) circuitry comprising:
non-volatile memory having design for testability (DFT) configuration data that is provided during manufacturing;
DFT circuitry adapted to provide at least one DFT control signal based on the DFT configuration data; and
RF transmitter circuitry adapted to:
select at least one transmitter parameter of the RF transmitter circuitry based on the at least one DFT control signal;
receive an RF transmit input signal;
provide an RF transmit output signal based on amplifying the RF TX input signal and based on the at least one transmitter parameter; and
wherein the RF transmitter circuitry comprises a switching power supply comprising frequency dithering circuitry having a plurality of frequency dithering configurations, and to select the at least one transmitter parameter, the RF transmitter circuitry is further adapted to select one of the plurality of frequency dithering configurations during normal operation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An improved cable bypass assembly, comprising:
a first connector configured for mounting to a circuit board, the connector including a connector body supporting a plurality of conductive terminals, the terminals including contact portions held within the connector body for contacting a mating blade of an opposing, mating connector and tail portions extending out from said connector body;
an elongated cable, the cable including: a pair of signal conductors disposed within an insulative body portion of the cable, the signal conductors extending, in a spaced-apart relationship, lengthwise through the cable body portion, a conductive shield extending over an exterior of said cable body portion and an insulative outer covering extending over the cable conductive shield, said cable having opposing first and second free ends, the cable first end being terminated directly to selected terminal tails of the first connector in a manner so that said cable two signal conductors are in electrical communication with a pair of signal terminal tails, and said assembly further including a shield extension member that is configured to engage a first length of the cable conductive shield exposed at said cable first end and extending therefrom over said cable two signal conductors attached to the pair of signal terminal tails; and
a second connector, including: an insulative body that supports at least a pair of conductive signal terminals in a spaced-apart relationship, each of the second connector signal terminals including contact and tail portions, and a shielding collar that encloses the second connector body portion, the shielding collar including an extension portion that engages and receives said cable conductive shield exposed at said cable second end;
whereby, at data transmission frequencies of about 19 GHz and greater, said bypass cable assembly exhibits low losses of no greater than about 8 dB.
2. The cable bypass assembly of claim 1, wherein said shield extension includes at least two spaced apart mounting feet.
3. The cable bypass assembly of claim 2, wherein said shield extension includes a cup portion configured to receive the cable first free end therein.
4. The cable bypass assembly of claim 1, further including a second cable, the second cable including a pair of signal conductors disposed lengthwise therethrough in a spaced-apart relationship, said second cable pair of signal conductors being attached to corresponding signal terminal tails of said first connector alongside said first cable, and wherein said shield extension includes a pair of cup portions, each cup portion being configured to receive ends of the two cables therein.
5. The cable bypass assembly of claim 4, wherein said shield extensions include at least three mounting feet, two of the mounting feet being disposed on opposing side edges of said shield extensions and a third of the three mounting feet being disposed between the pair of cup portions.
6. The cable bypass assembly of claim 5, wherein said shield extension mounting feet and said two cable signal conductors are all aligned with each other.
7. The cable bypass assembly of claim 1, wherein said first connector terminal tail and contact portions extend uninterruptedly lengthwise in a general horizontal plane through said first connector body.
8. The cable bypass assembly of claim 1, wherein said cable includes a preselected length of flexible circuitry.
9. The cable bypass assembly of claim 1, wherein said second connector shielding collar includes at least one through hole terminal extending therefrom for engaging a through hole of a circuit board.
10. The cable bypass assembly of claim 1, wherein said shielding collar includes a cap portion with a cup portion formed therein that is configured to receive an exposed second end of said cable therein and contact a length of exposed cable shielding.
11. The cable bypass assembly of claim 1, wherein said second connector is configured to connect directly to a chip member.
12. A cable bypass assembly with low loss performance at high data frequencies, comprising:
a first connector configured for mounting to a circuit board, the connector including a connector body supporting a plurality of conductive terminals, the terminals including contact portions held within the connector body for contacting a mating blade of an opposing, mating connector and tail portions extending out from said connector body;
an elongated cable having first and second opposing ends, the cable including a pair of signal conductors disposed within the cable in a spaced-apart relationship and extending lengthwise through the cable, at least one conductive shield extending lengthwise through said cable and substantially enclosing the signal conductors, the signal conductors, at the cable first end, being terminated directly to selected ones of the first connector terminal tails in a manner so that said cable two signal conductors are in electrical communication with a pair of signal terminal tails along a horizontal extent thereof, and said assembly further including a shield that extends over said cable two signal conductors attached to the pair of signal terminal tails; and
a second connector, including: an insulative body that supports at least a pair of conductive signal terminals in a spaced-apart relationship, each of the second connector signal terminals including contact and tail portions, said cable signal conductors at said second end thereof being terminated to the second connector terminal contact portions, and the cable conductive shield being terminated to selected terminals of said second connector designated for ground purposes;
whereby, at data transmission frequencies of about 19 GHz and greater, said bypass cable assembly exhibits low losses of no greater than about 8 db.
13. The cable bypass assembly of claim 12, wherein said cable is an extent of flexible circuitry, the circuitry signal conductors including two conductive strips.
14. The cable bypass assembly of claim 13, wherein said shield includes a pair of ground strips disposed on opposite sides of said conductive strips.
15. The cable bypass assembly of claim 14, wherein said ground strips extend over termination ends of said conductive strips.