1. A method for fabricating an integrated circuit die with a wirebonded wire, comprising:
providing a semiconductor substrate, an active device in or over said semiconductor substrate, a first interconnect metal layer over said semiconductor substrate, an intermetal dielectric layer over said first interconnect metal layer, a second interconnect metal layer over said intermetal dielectric layer, and a passivation layer over said second interconnect metal layer, wherein a first opening in said passivation layer exposes a first pad of said second interconnect metal layer;
forming a second pad over said semiconductor substrate, wherein said second pad is connected to said first pad through said first opening in said passivation layer, and wherein said forming said second pad comprises forming a gluebarrier layer over said first pad and over said passivation layer, forming a seed layer on said gluebarrier layer, forming a photoresist layer on said seed layer, wherein a second opening in said photoresist layer exposes said seed layer, electroplating a copper layer on said seed layer exposed by said second opening in said photoresist layer, wherein said copper layer has a thickness greater than 1 micrometer, electroplating a nickel layer on said copper layer in said second opening, wherein said nickel layer has a thickness greater than 0.5 micrometer, electroless plating a gold layer on said nickel layer in said second opening, wherein said gold layer has a thickness greater than 0.1 micrometer, after said electroless plating said gold layer, removing said photoresist layer, etching said seed layer not under said gold layer, and etching said gluebarrier layer not under said gold layer; and
wirebonding said wirebonded wire to said second pad, wherein a contact area between said second pad and said wirebonded wire is directly over said active device.
2. The method of claim 1, after said providing said semiconductor substrate, further comprising forming a polymer layer on said passivation layer, followed by said forming said second pad on said polymer layer.
3. The method of claim 1, wherein said forming said gluebarrier layer comprises sputtering a titanium-containing layer over said first pad and over said passivation layer.
4. The method of claim 1, wherein said forming said gluebarrier layer comprises sputtering a chromium-containing layer over said first pad and over said passivation layer.
5. The method of claim 1, wherein said first opening has a width between 40 \u03bcm and 100 \u03bcm.
6. The method of claim 1, wherein said forming said gluebarrier layer comprises a sputtering process.
7. The method of claim 1, wherein said forming said seed layer comprises a sputtering process.
8. The method of claim 1, wherein said passivation layer comprises a nitride layer and an oxide layer.
9. The method of claim 1, wherein said seed layer comprises copper.
10. A method for fabricating an integrated circuit die with a wirebonded wire, comprising:
providing a semiconductor substrate, an active device in or over said semiconductor substrate, a first interconnect metal layer over said semiconductor substrate, an intermetal dielectric layer over said first interconnect metal layer, a second interconnect metal layer over said intermetal dielectric layer, and a passivation layer over said second interconnect metal layer, wherein a first opening in said passivation layer exposes a first pad of said second interconnect metal layer;
forming a polymer layer on said passivation layer, wherein said forming said polymer layer comprises depositing a photosensitive polymer on said passivation layer;
forming a second opening in said polymer layer, wherein said second opening exposes said first pad;
forming a second pad over said polymer layer, wherein said second pad is connected to said first pad through said second opening and said first opening, and wherein said forming said second pad comprises forming a gluebarrier layer over said first pad and over said polymer layer, forming a seed layer on said gluebarrier layer, forming a photoresist layer on said seed layer, wherein a third opening in said photoresist layer exposes said seed layer, electroplating a copper layer on said seed layer exposed by said third opening, wherein said copper layer has a thickness greater than 1 micrometer, electroplating a nickel layer on said copper layer in said third opening, wherein said nickel layer has a thickness greater than 0.5 micrometer, electroless a gold layer on said nickel layer in said third opening, wherein said gold layer has a thickness greater than 0.1 micrometer, after said electroless plating said gold layer, removing said photoresist layer, etching said seed layer not under said gold layer, and etching said gluebarrier layer not under said gold layer; and
wirebonding said wirebonded wire to said second pad, wherein a contact area between said second pad and said wirebonded wire is directly over said active device.
11. The method of claim 10, wherein said passivation layer comprises a nitride layer and an oxide layer.
12. The method of claim 10, wherein said forming said polymer layer comprises forming a polyimide layer on said passivation layer.
13. The method of claim 10, wherein said forming said polymer layer comprises forming a benzocyclobutene (BCB) layer on said passivation layer.
14. The method of claim 10, wherein said forming said gluebarrier layer comprises a sputtering process.
15. The method of claim 10, wherein said forming said seed layer comprises a sputtering process.
16. The method of claim 10, wherein said forming said polymer layer comprises a spin-coating process.
17. The method of claim 10, wherein said forming said gluebarrier layer comprises sputtering a titanium-containing layer over said first pad and over said polymer layer.
18. The method of claim 10, wherein said forming said gluebarrier layer comprises sputtering a chromium-containing layer over said first pad and over said polymer layer.
19. The method of claim 10, wherein said seed layer comprises copper.
20. A method for fabricating an integrated circuit die with a wirebonded wire, comprising:
providing a semiconductor substrate, an active device in or over said semiconductor substrate, a first interconnect metal layer over said semiconductor substrate, an intermetal dielectric layer over said first interconnect metal layer, a second interconnect metal layer over said intermetal dielectric layer, and a passivation layer over said second interconnect metal layer, wherein a first opening in said passivation layer exposes a first pad of said second interconnect metal layer, and wherein said passivation layer comprises an oxide layer and a nitride layer wherein said nitride layer is over said oxide layer;
forming a polymer layer on said passivation layer, wherein said forming said polymer layer comprises depositing a photosensitive polymer on said passivation layer;
forming a second opening in said polymer layer, wherein said second opening exposes said first pad;
forming a second pad over said polymer layer, wherein said second pad is connected to said first pad through said second opening and said first opening, and wherein said forming said second pad comprises forming a gluebarrier layer over said first pad and over said polymer layer, forming a first copper layer on said gluebarrier layer, electroplating a second copper layer on said first copper layer, wherein said second copper layer has a thickness greater than 1 micrometer, electroplating a nickel layer on said second copper layer, wherein said nickel layer has a thickness greater than 0.5 micrometer, forming a gold layer on said nickel layer, wherein said gold layer has a thickness greater than 0.1 micrometer, etching said first copper layer not under said gold layer, and etching said gluebarrier layer not under said gold layer; and
wirebonding said wirebonded wire to said second pad, wherein a contact area between said second pad and said wirebonded wire is directly over said active device, wherein the position of said contact area from a top view is different from that of said first pad.
21. The method of claim 20, wherein said forming said polymer layer comprises forming a polyimide layer on said passivation layer.
22. The method of claim 20, wherein said forming said polymer layer comprises forming a benzocyclobutene (BCB) layer on said passivation layer.
23. The method of claim 20, wherein said forming said polymer layer comprises a spin-coating process.
24. The method of claim 20, wherein said forming said gluebarrier layer comprises a sputtering process.
25. The method of claim 20, wherein said forming said first copper layer comprises a sputtering process.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A valve in which a valve disc and a valve seat are brought into close contact via an annular sealing member composed of an elastic material and provided at said valve disc or said valve seat, wherein
the valve is substantially circular in structure about the central axis;
said valve disc comprises a first surface that is orthogonal to the central axis facing said valve seat and a first peripheral surface connected to said first surface,
said valve seat comprises a second surface that is orthogonal to the central axis facing said first surface and an annular protrusion protruding from said second surface toward said first peripheral surface in a position facing said first peripheral surface,
the annular protrusion has a second peripheral surface that is connected to the second surface and is configured to face the first peripheral surface,
the first peripheral surface is composed of a tapered peripheral surface,
the second peripheral surface is composed of an inversely tapered peripheral surface,
said sealing member is provided at one of said first surface and said second surface and configured so that said sealing member can be brought into close contact with the other of said first surface and said second surface,
the sealing member is positioned radially inward of the tapered peripheral surface and the inversely tapered peripheral surface in the direction of the central axis of the valve and is wholly integrated into the first or second surface,
the sealing member is positioned at a downstream side from the tapered peripheral surface and inversely tapered peripheral surface in a flow direction of fluid, and
a flow passage between said first peripheral surface and said annular protrusion comprises a flow passage that is set to have a cross section area that is preferentially reduced with respect to that of a flow passage between said first surface and said second surface during the closing of the valve.
2. The valve according to claim 1, wherein in said flow passage that is set to have a reduced cross section area, the ratio of reduction of the cross section area that follows the closing operation of said valve disc is larger than that in the flow passage between said first surface and said second surface.
3. The valve according to claim 1, wherein
said annular protrusion has a second peripheral surface that is connected to said second surface and can face said first peripheral surface; and
said flow passage that is set to have a reduced cross section area is at least part of the flow passage between said first peripheral surface and said second peripheral surface.
4. The valve according to claim 3, wherein said
first peripheral surface is composed of the tapered peripheral surface,
and said second peripheral surface is composed of the inversely tapered peripheral surface inclined toward said valve disc.
5. The valve according to claim 4, wherein the relationship R1<R2 is satisfied, where R1 stands for a distance to the crossing section of said first surface and said tapered peripheral surface and R2 stands for a distance to the crossing section of said second surface and said inversely tapered peripheral surface.
6. The valve according to claim 4, wherein the relationship \u03b81>\u03b82 is satisfied, where \u03b81 stands for an inclination angle of said tapered peripheral surface with respect to the axis center of said valve disc and \u03b82 stands for an inclination angle of said inversely tapered peripheral surface with respect to the axis center of said valve disc.
7. The valve according to claim 1, wherein the relationship H3<H4 is satisfied, where H3 stands for a distance between said first peripheral surface and said annular protrusion and H4 stands for a distance between said first surface and said second surface.
8. The valve according to claim 7, wherein the reduction ratio of H3 is set to become higher than the reduction ratio of H4 during closing operation of said valve disc.
9. The valve according to claim 1, wherein
said annular protrusion has a second peripheral surface that is connected to said second surface and can face said first peripheral surface, and
an annular surface connected to said second peripheral surface and parallel to said second surface.
10. The valve according to claim 1, wherein said first surface and said second surface are parallel to each other.
11. The valve according to claim 1 wherein said sealing member protrudes from one of said first surface and said second surface toward the other.
12. The valve according to claim 1, wherein the flow direction of fluid that passes said throttle section is configured to comply with the closing direction of the valve disc.
13. The valve according to claim 1, wherein the tapered peripheral surface maintains a first substantially constant angle relative to a closing direction of the valve, and the inversely tapered peripheral surface maintains a second substantially constant angle relative to the closing direction.
14. The valve according to claim 1, wherein the sealing member protrudes from the valve disk or the valve seat.
15. The valve according to claim 1, wherein the valve is an electromagnetic valve.
16. The valve according to claim 1, wherein fluid flows from a position that is radially outward toward a position that is radially inward with respect to the central axis.