1. A rotary drill bit comprising:
a bit body having a connecting portion for connection to a conveyance and a drilling portion;
the drilling portion including a drilling surface having a plurality of cutting elements, each cutting element having
at least a first cutting surface and a second cutting surface, the drilling portion being operable in at least two different drilling orientations; and
the drilling surface being rotatable in two opposing directions comprising a first direction and a second direction opposite from the first direction.
2. A rotary drill bit as claimed in claim 1, wherein the first cutting surface is used for drilling when the drilling portion is rotated in a first direction.
3. A rotary drill bit as claimed in claim 1, wherein the second cutting surface is used when the drilling portion is rotated in a second direction.
4. A rotary drill bit as claimed in claim 1, wherein an adjustment means is located on each cutting element for adjusting the configuration of the cutting element while in use.
5. A rotary drill bit as claimed in claim 4, wherein the positional orientation of the cutting elements in relation to the surface of the drilling portion is adjustable.
6. A rotary drill bit as claimed in claim 4, wherein the height of the cutting surface above the surface of the drilling portion is adjustable.
7. A rotary drill bit as claimed in claim 4, wherein the angular displacement between a cutting surface and the surface of the drilling portion is adjustable.
8. A rotary drill bit as claimed in claim 4, wherein the adjustment means is remotely controlled.
9. A rotary drill bit as claimed in claim 1, wherein the rotary drill bit is used with electronically controlled drilling equipment, and the cutting elements are electronically adjustable.
10. A rotary drill bit as claimed in claim 1, wherein at least a portion of the cutting surfaces on the cutting elements are of the PDC type.
11. A rotary drill bit as claimed in claim 1, wherein the drill bit is used with conventional drill pipes.
12. A rotary drill bit as claimed in claim 1, wherein the drill bit is configurable downhole in response to changing conditions in the downhole environment.
13. A method, comprising:
rotating a rotary drill bit in a first rotational direction within a well to extend the well, wherein the rotary drill bit comprises a plurality of cutting elements,
wherein:
at least one of the plurality of cutting elements comprises first and second cutting surfaces; and
rotating the rotary drill bit in the first rotational direction extends the well by removing material with the first cutting surface of the at least one of the plurality of cutting elements; and
rotating the rotary drill bit in a second rotational direction within the well to further extend the well, wherein the first and second rotational directions are substantially opposite, and wherein
rotating the rotary drill bit in the second rotational direction extends the well by removing material with the second cutting surface of the at least one of the plurality of cutting elements.
14. The method of claim 13 further comprising conveying the rotary drill bit within the well via one of:
a wireline; and
a drill string.
15. The method of claim 13 further comprising modifying at least one of the plurality of cutting elements after rotating the rotary drill bit in the first rotational direction but before rotating the rotary drill bit in the second rotational direction.
16. The method of claim 15 wherein modifying at least one of the plurality of cutting elements comprises changing an angle of at least one of the plurality of cutting elements.
17. The method of claim 15 wherein modifying at least one of the plurality of cutting elements comprises changing a height of at least one of the plurality of cutting elements.
18. The method of claim 15 wherein modifying at least one of the plurality of cutting elements comprises retracting at least one of the plurality of cutting elements into the rotary drill bit.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of making a transient electronic device comprising the steps of:
fabricating one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components supported by a mother substrate; wherein the one or more inorganic semiconductor components or one or more metallic conductor components independently comprise a selectively transformable material and have a preselected transience profile;
providing a handle substrate having a receiving surface; wherein the receiving surface supports a release layer;
transfer printing the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the mother substrate to the release layer supported by the handle substrate;
removing the release layer on said handle substrate;
providing a substrate layer on top of the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components;
releasing the substrate layer and the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the handle substrate;
flipping the substrate layer and the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components to access an exposed surface of said one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components supported by the substrate layer; and
processing the exposed surface, thereby making said transient electronic device.
2. A method of making a transient electronic device comprising the steps of:
fabricating one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components supported by a mother substrate; wherein the one or more inorganic semiconductor components or one or more metallic conductor components independently comprise a selectively transformable material and have a preselected transience profile;
providing a patterned substrate comprising one or more components of an electronic device on a receiving surface of the patterned substrate;
transfer printing the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the mother substrate to the receiving surface of the patterned substrate; and
integrating the one or more inorganic semiconductor components, one or more metallic components or one or more inorganic semiconductor components and one or more metallic conductor components with the one or more electronic device components on the receiving surface of the patterned substrate, thereby making said transient electronic device.
3. The method of claim 1 or 2, wherein said step of fabricating one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components supported by a mother substrate is carried out at a semiconductor foundry.
4. The method of any of the preceding claims, wherein said steps other than said step of fabricating one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components supported by a mother substrate are not carried out in a semiconductor foundry.
5. The method of claim 1, wherein the processing step comprises adding a transient device component.
6. The method of claim 5, wherein the transient device component comprises an electrode, an electrical interconnect, a semiconductor, an encapsulating layer, or any combination thereof.
7. The method of claim 1, wherein the processing step comprises replacing:
an inorganic semiconductor component with a transient inorganic semiconductor component; or
a metallic conductor component with a transient metallic conductor.
8. The method of claim 7, wherein the replacing comprises modifying a physical parameter of the inorganic semiconductor or metallic conductor to make a corresponding transient inorganic semiconductor or transient metal conductor.
9. The method of claim 8, wherein the physical parameter is one or more of:
porosity, thickness, effective density, defect density, dopant concentration, composition, or morphology.
10. The method of claim 1, wherein the processing step comprises providing a transient substrate.
11. The method of claim 1 or 10, wherein the processing step comprises encapsulating at least a portion of the exposed surface with an encapsulating layer.
12. The method of claim 11, wherein the encapsulating layer comprises a selectively removable material that is at least partially removed in response to an external or internal stimulus.
13. The method of claim 12, wherein the selectively removable material of the encapsulating layer comprises a material selected from the group consisting of a polymer, a metal, a metal oxide, a glass and a ceramic.
14. The method of claim 11, 12 or 13, wherein the encapsulating layer, the substrate and at least a portion of the one or more inorganic semiconductor components or the one or more metallic conductor components, each independently comprise a selectively transformable material.
15. The method of claim 1 or 3-14, wherein processing the exposed surface comprises providing one or more interconnect structures for electrically interconnecting the one or more semiconductor components, wherein the interconnect structures independently comprise a selectively transformable material and have a preselected transience profile.
16. The method of claim 15, wherein the electrically interconnecting comprises patterning a transient metal that is W or Mo.
17. The method of claim 15, wherein the one or more interconnect structures are provided via physical vapor deposition, chemical vapor deposition, sputtering, atomic layer deposition, electrochemical deposition, spin casting, ink jet printing, electrohydrodynamic jet printing, screen printing or any combination thereof.
18. The method of claim 1 or 3-17, further comprising the step of integrating a transient passive component, a transient active component, or both, with the one or more inorganic semiconductor components.
19. The method of claim 18, wherein the integrating step is carried out after the step of flipping the substrate layer.
20. The method of claim 18, wherein the integrating step is part of the fabricating step.
21. The method of claim 1 further comprising providing a protective layer between said release layer and said one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components.
22. The method of claim 21, wherein said protective layer allows for said removal of said release layer without substantial degradation of said one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components.
23. The method of claim 21 or 22 wherein said protective layer is a polymer layer in contact with said one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components.
24. The method of any of the preceding claims, wherein the fabricating step comprises forming a plurality of semiconductor components on the mother substrate.
25. The method of claim 24, wherein the fabricating step further comprises undercutting the semiconductor components.
26. The method of claim 25, wherein the plurality of semiconductor components are freestanding on the mother substrate and connected to the mother substrate by one or more anchors.
27. The method of any of the preceding claims, wherein the mother substrate comprises a silicon-on-insulator (SOI) wafer.
28. The method of claim 27, wherein the SOI wafer has a <111> orientation.
29. The method of claim 27, wherein the SOI wafer comprises:
a silicon handle wafer having a <111> orientation;
a buried insulator layer; and
a top layer of active Si having a <100> orientation from which the one or more semiconductor components are formed.
30. The method of claim 29, further comprising the step of: etching the Si <111> handle wafer to facilitate release of the one or more semiconductor device components that comprise Si <100> from the mother substrate.
31. The method of claim 29, wherein the SOI wafer comprises a commercial quality SOI wafer that is coated with the buried insulator layer that is an oxide layer, and the oxide layer is bonded to a bulk <111>-oriented silicon wafer.
32. The method of claim 31, wherein the oxide layer comprises silicon dioxide.
33. The method of any of the preceding claims, wherein the transfer printing comprises dry transfer contact printing.
34. The method of claim 33, wherein the dry transfer printing further comprises
contacting the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components with a transfer device;
removing the transfer device and the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the mother substrate;
contacting the transfer device and the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components to the handle substrate; and
removing the transfer device without the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components, thereby transferring the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components to the handle substrate.
35. The method of claim 33, wherein the transfer device comprises an elastomeric stamp.
36. The method of any of the preceding claims, wherein the transfer printing is high throughput and high fidelity.
37. The method of claim 1, wherein the handle substrate comprises a Si wafer.
38. The method of any of the preceding claims, wherein the step of providing said substrate layer comprises:
spin casting; or
laminating a polymer, metal, metal oxide, ceramic or glass to a surface of the one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components.
39. The method of claim 38, wherein the polymer is an organic polymer, poly(lactic-co-glycolic acid) (PLGA), or polydimethylsiloxane (PDMS).
40. The method of claim 30, wherein providing the substrate layer is before the etching step.
41. The method of claim 30, wherein providing the substrate layer is after the etching step.
42. The method of any of the preceding claims, wherein the substrate layer comprises a selectively transformable material.
43. The method of claim 42, wherein the substrate layer has a user-selected degradation characteristic in a defined environmental setting.
44. The method of claim 43, wherein the degradation characteristic is a degradation rate that is at least partially dependent on a physical parameter of the surrounding environment.
45. The method of any of the preceding claims, further comprising the step of transferring the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the substrate layer to a receiving substrate by contact printing.
46. The method of any of the preceding claims, the substrate layer having mechanical properties to facilitate handling and flipping without damage to the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components.
47. The method of any of the preceding claims, wherein the step of releasing the substrate layer and the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the handle substrate comprises applying a removal force to the substrate layer in a direction away from the handle substrate.
48. The method of any of the preceding claims, wherein the step of releasing the substrate layer and the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the handle substrate comprises peeling the substrate layer in a direction away from the handle substrate.
49. The method of claim 1, wherein the substrate layer functions as a handle for separating the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from handle substrate.
50. The method of claim 49, wherein the substrate layer functions as a handle for transferring the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components to a receiving substrate having a receiving surface.
51. The method of claim 1, wherein the release layer comprises a layer of poly(methyl methacrylate) (PMMA).
52. The method of claim 51, wherein the removing step comprises a two-step dry and wet process to facilitate removal of the substrate layer and the one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components from the handle wafer.
53. The method of any of the preceding claims, wherein the transience profile is selected by adjusting any one or more of:
a thickness of the semiconductor or the metallic conductor components;
a density of the semiconductor or the metallic conductor components;
a defect density of the semiconductor or the metallic conductor components;
a composition of the semiconductor or the metallic conductor components;
a porosity of the semiconductor or the metallic conductor components;
a crystallinity of the semiconductor or the metallic conductor components;
a dopant of the semiconductor or the metallic conductor components; or
a morphology of the semiconductor or the metallic conductor components.
54. The method of any of the preceding claims, wherein the one or more metallic conductor components are independently selected from the group consisting of Mg, Mo, W, Fe, Zn and alloys thereof.
55. The method of any of the preceding claims comprising fabricating a plurality of inorganic semiconductor components.
56. The method of claim 55, wherein the processing step comprises providing one or more metallic components.
57. The method of any of the preceding claims, wherein the one or more metallic components comprise interconnects that electrically interconnect one or more semiconductor components.
58. The method of any of the preceding claims, wherein the metallic components comprise electrodes in electrical communication with the one or more semiconductor components.
59. The method of any of the preceding claims, wherein the metallic components are provided by a deposition technique.
60. The method of claim 59, wherein the deposition technique is selected from the group consisting of physical vapor deposition, chemical vapor deposition, sputtering, epitaxial growth, atomic layer deposition, electrochemical deposition, electrohydrodynamic jet printing, and molecular beam epitaxy.
61. The method of any of the preceding claims, wherein the one or more inorganic semiconductor components or one or more metallic conductor components is microsized, having a lateral dimension that is greater than or equal to 5 \u03bcm and less than or equal to 500 \u03bcm.
62. The method of any of the preceding claims, wherein the transient electronic device comprises a metal-oxide semiconductor field-effect transistor (MOSFET);
a complementary metal-oxide-semiconductor (CMOS), a transistor, a capacitive sensor, a diode, a photodector, or a capacitor.
63. The method of any of the preceding claims, wherein the transient electronic device is a communication system, a photonic device, a sensor, an optoelectronic device, a biomedical device, a temperature sensor, a photodetector, a photovoltaic device, a strain gauge, an imaging system, a wireless transmitter, an antenna, a battery, a nanoelectromechanical system or a microelectromechanical system.
64. The method of claim 1, comprising a plurality of semiconductor components or a plurality of metallic conductor components that are simultaneously transferred to the handle wafer, wherein the plurality is selected from a range that is greater than or equal to 2 components and less than or equal to 100,000,000 components.
65. The method of any of the preceding claims, wherein the one or more inorganic semiconductor components or the one or more metallic conductor components independently comprise one or more thin film structures.
66. The method of claim 65, wherein the one or more thin film structures each independently have a thickness selected over a range that is greater than or equal to 10 nm and less than or equal to 100 \u03bcm.
67. The method of any of the preceding claims, wherein the transient electronic device degrades in response to an environmental signal.
68. The method of any of the preceding claims, wherein the transient electronic device degrades in response to a user-initiated signal.
69. The method of any of the preceding claims, wherein the selectively transformable material has an electrical dissolution rate selected from the range of 0.01 nmday to 100 \u03bcms.
70. The method of any of the preceding claims, wherein the preselected transience profile is characterized by one or more of:
a transformation of 0.01% to 100% of said one or more inorganic semiconductor components or said one or more metallic conductor components over a time interval selected from the range of 1 ms to 5 years;
a decrease in average thickness of said one or more inorganic semiconductor components or said one or more metallic conductor components at a rate selected over the range of 0.01 nmday to 100 microns s\u22121;
a decrease in electrical conductivity of said one or more inorganic semiconductor components or said one or more metallic conductor components at a rate selected over the range of 1010 S\xb7m\u22121 s\u22121 to 1 S\xb7m\u22121 s\u22121;
a change in morphology of said one or more inorganic semiconductor components or said one or more metallic conductor components, said change in morphology selected from the group consisting of pitting, flaking, cracking and uniform degradation;
a percentage decrease in density of said one or more inorganic semiconductor components or said one or more metallic conductor components selected over the range of 0.01% to 99.9%; or
a percentage increase in porosity of said one or more inorganic semiconductor components or said one or more metallic conductor components selected over the range of 0.01% to 99.9%.