1. A method for programming a memory array of a NROM nonvolatile memory having a plurality of memory cells organized in rows and columns and provided with first conductive regions formed in a semiconductor body and connected to first bitlines, second conductive regions formed in said semiconductor body and connected to second bitlines, charge storage regions of insulating material, formed on top of said semiconductor body, and gate regions arranged on top of said charge storage regions and connected to respective wordlines,
the method comprising the steps of:
applying a first voltage to a selected one of said wordlines, said first voltage having a first value with respect to said semiconductor body; and
applying a second voltage having a second non-zero value, lower than said first value, to a plurality of said wordlines excluding said selected wordline.
2. The method according to claim 1 wherein said first and second voltages have a positive value.
3. The method according to claim 1 wherein said second voltage is between 0.75 and 1.25 V.
4. The method according to claim 1, further comprising the steps of applying a third voltage having a third value to a selected one of said first or second bitlines and applying a fourth voltage having a fourth value, lower than the said third value, to a plurality of said bitlines, excluding said selected bitline.
5. The method according to claim 4 wherein said third voltage has a positive value and said fourth voltage is a ground voltage.
6. An NROM device comprising:
a memory array, formed by a plurality of memory cells organized in rows and columns and provided with first conductive regions formed in a semiconductor body and connected to first bitlines, second conductive regions formed in said semiconductor body and connected to second bitlines, charge storage regions of insulating material, formed on top of said semiconductor body, and gate regions arranged on top of said charge storage regions and connected to respective wordlines; and
a programming circuit for a selected cell connected to a selected one of the wordlines, wherein the programming circuit comprises a plurality of drivers, including a first driver and second drivers, said first driver supplying a first voltage of a first value with respect to said semiconductor body to the selected one of said wordlines, and said second drivers configured to supply a second voltage having a second non-zero value, lower than said first value, to a plurality of said wordlines, excluding said selected wordline.
7. The device according to claim 6 wherein each of said drivers of said plurality of drivers comprises a signal input receiving a control signal, an output connected to a respective one of the wordlines, a first supply input connected to a first supply line, set at said first voltage, and a second supply input connected to a controllable biasing circuit.
8. The device according to claim 7 wherein said controllable biasing circuit comprises:
a changeover switch having a first input connected to a reference potential point;
a second input connected to a voltage generator, which supplies said second voltage;
an output connected to said second supply input of said drivers of said plurality of drivers; and
a control input configured to receive a switching signal.
9. The device according to claim 8 wherein said controllable biasing circuit comprises:
a load element connected between a second supply line and said output of said controllable biasing circuit, said load element being activated by said switching signal;
a switch connected between said output of said controllable biasing circuit and said reference potential point, said switch being driven by said switching signal in phase opposition with respect to said load element; and
a diode, connected between said output of said controllable biasing circuit and said reference potential point.
10. A method of programming a first cell while protecting a second cell sharing a common bitline with the first cell, comprising:
applying a first voltage to the common bitline;
applying a second voltage, greater than zero and lower than the first voltage, to a wordline of the second cell; and
applying a programming voltage, higher than the second voltage, to a wordline of the first cell.
11. The method of claim 10, further comprising verifying a threshold voltage of the first cell.
12. The method of claim 11, further comprising repeating the applying steps if the threshold voltage of the first cell does not exceed a selected value.
13. The method of claim 10, further comprising applying a circuit ground to a non-common bitline of each of the first and second cells.
14. The method of claim 10 wherein the first voltage is in a range of about 4-6.5 volts.
15. The method of claim 10 wherein the second voltage is in a range of about 0.5-1.5 volts.
16. The method of claim 10 wherein a difference in voltage between the first voltage and the second voltage is less than about 6 volts.
17. A method of protecting a program charge in a cell having first and second conductive regions formed in a semiconductor body, a charge storage region formed on top of the semiconductor body, and a gate region formed on top of the charge storage region, comprising:
applying a first voltage to a conductive line coupled to the first conductive region; and
applying a second voltage, lower than the first voltage and greater than zero, with respect to the semiconductor body, to the gate region while the first voltage is present at the conductive line.
18. The method of claim 17 wherein a difference between the first voltage and the second voltage is less than about 6 volts.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An apparatus for treating a sweat gland of a patient comprising:
a microwave generator;
a grasping mechanism configured to grasp an area of skin tissue to form a skin fold having a first side and a second side;
a cooling element configured to apply protective cooling to at least a portion of the area of skin tissue; and
first and second microwave antennas coupled to the microwave generator and associated with the grasping mechanism such that, when the skin fold is formed, the first microwave antenna is positioned on the first side of the skin fold and the second microwave antenna is positioned on the second side of the skin fold, wherein the first and second microwave antennas are configured to deliver microwave energy through the cooling element to the area of skin tissue to at least partially destroy or disable at least one sweat gland within the area of skin tissue.
2. The apparatus of claim 1, wherein the cooling element adapted to be positioned proximate to the skin fold when skin tissue is positioned in the grasping mechanism.
3. The apparatus of claim 1, wherein the cooling element comprises a first cooling element adapted to be positioned proximate the first side of the skin fold and a second cooling element adapted to be positioned proximate to the second side of the skin fold when skin tissue is positioned in the grasping mechanism.
4. The apparatus of claim 1, wherein the grasping mechanism comprises a suction mechanism configured to provide suction to the skin tissue when the skin tissue is positioned in the grasping mechanism.
5. The apparatus of claim 4, wherein the suction mechanism is configured to provide suction to the skin tissue to position the skin tissue in the grasping mechanism.
6. The method of claim 4, wherein the area of skin tissue comprises at least a portion of the axilla.
7. A method of treating a patient comprising:
identifying an area of skin tissue comprising a layer of sweat glands, wherein the area of skin tissue produces sweat;
grasping the area of skin tissue to form a skin fold, the skin fold comprising a first side and a second side, wherein, when folded the layer of sweat glands corresponding to the first side is proximally adjacent to the layer of sweat glands corresponding to the second side such that the layers comprise a treatment zone;
applying protective cooling with a cooling element to at least a portion of the area of skin tissue; and
positioning microwave antennas on the first and second sides of the skin fold and delivering microwave energy with the microwave antennas through the cooling element to the treatment zone to yield a treatment effect, said treatment effect reducing the amount of sweating from the area of skin tissue.
8. The method of claim 7, wherein applying protective cooling to at least a portion of the area of skin tissue further comprises positioning the cooling element proximate the skin fold.
9. The method of claim 8, wherein positioning the cooling element proximate the skin fold further comprises positioning a first cooling element proximate the first side of the skin fold and a second cooling element proximate the second side of the skin fold.
10. The method of claim 7, wherein grasping the area of skin tissue to form the skin fold further comprises providing suction to the area of skin tissue.
11. The method of claim 10, wherein providing suction to the area of skin tissue further comprises maintaining suction to the area of skin tissue during the treatment.
12. The method of claim 11, wherein the skin area of skin tissue is an area of the axilla.