1. A method for producing electricity, and hydrogen or syngas, using a molten carbonate fuel cell comprising an anode and a cathode, the method comprising:
introducing an anode fuel stream comprising a reformable fuel into the anode of the molten carbonate fuel cell, an internal reforming element associated with the anode of the molten carbonate fuel cell, or a combination thereof;
introducing a cathode inlet stream comprising CO2 and O2 into the cathode of the molten carbonate fuel cell;
generating electricity within the molten carbonate fuel cell;
generating an anode exhaust from an anode outlet of the molten carbonate fuel cell;
separating from the anode exhaust a H2-containing stream, a syngas-containing stream, or a combination thereof,
wherein a fuel utilization of the anode of the molten carbonate fuel cell is about 50% or less and a CO2 utilization of the cathode of the molten carbonate fuel cell is at least about 60%.
2. The method of claim 1, wherein a reformable hydrogen content of the reformable fuel introduced into the anode of the molten carbonate fuel cell, the internal reforming element associated with the anode of the molten carbonate fuel cell, or the combination thereof, is at least about 75% greater than an amount of H2 oxidized in the anode of the molten carbonate fuel cell to generate electricity.
3. The method of claim 1, wherein the cathode inlet stream comprises about 20 vol % CO2 or less.
4. The method of claim 1, wherein the fuel utilization of the anode of the molten carbonate fuel cell is about 40% or less.
5. The method of claim 1, wherein the CO2 utilization of the cathode of the molten carbonate fuel cell is at least about 65%.
6. The method of claim 1, wherein the anode fuel stream comprises at least about 10 vol % inert compounds, at least about 10 vol % CO2, or a combination thereof.
7. The method of claim 1, wherein the syngas-containing stream has a molar ratio of H2 to CO from about 3.0:1 to about 1.0:1.
8. The method of claim 7, wherein the syngas-containing stream has a molar ratio of H2 to CO from about 2.5:1 to about 1.5:1, or a combination thereof.
9. The method of claim 1, wherein the anode exhaust has a molar ratio of H2 to CO of about 1.5:1 to about 10:1.
10. The method of claim 9, wherein the anode exhaust has a molar ratio of H2 to CO of at least about 3.0:1.
11. The method of claim 1, wherein less than 10 vol % of H2 produced in the anode of the molten carbonate fuel cell in a single pass is directly or indirectly recycled to the anode of the molten carbonate fuel cell or the cathode of the molten carbonate fuel cell.
12. The method of claim 1, wherein less than 10 vol % of the syngas-containing stream is directly or indirectly recycled to the anode of the molten carbonate fuel cell or the cathode of the molten carbonate fuel cell.
13. The method of claim 1, wherein less than 10 vol % of the anode exhaust is directly or indirectly recycled to the anode of the molten carbonate fuel cell or the cathode of the molten carbonate fuel cell.
14. The method of claim 1, wherein no portion of the anode exhaust is directly or indirectly recycled to the anode of the molten carbonate fuel cell, directly or indirectly recycled to the cathode of the molten carbonate fuel cell, or a combination thereof.
15. The method of claim 1, further comprising separating at least one of CO2 and H2O from one or a combination of i) the anode exhaust, ii) the H2-containing stream, and iii) the syngas-containing stream.
16. The method of claim 1, wherein the H2-containing stream contains at least about 90 vol % H2.
17. The method of claim 1, wherein the cathode inlet stream comprises a combustion exhaust stream from a combustion-powered generator.
18. The method of claim 1, wherein the molten carbonate fuel cell is operated at a voltage VA of about 0.67 Volts or less.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A manufacturing process of a thin film transistor comprising the steps of:
forming a control electrode on a substrate;
forming an insulating film, a semiconductor film, and a contact film continuously on said control electrode;
giving a hydrophilic property to a surface of said contact film by nitriding or oxidizing the surface of said contact film after forming said contact film;
forming a semiconductor layer and a contact layer by forming a resist and patterning said semiconductor film and said contact film;
forming a pair of electrodes which form a semiconductor device with said semiconductor layer; and
etching the contact layer using said pair of electrodes as a mask.
2. A manufacturing process of a thin film transistor according to claim 1, wherein the nitriding treatment of the surface of the contact film is a treatment by a N2 gas plasma.
3. A manufacturing process of a thin film transistor according to claim 1, wherein the nitriding treatment of the surface of the contact film is a treatment by a mixed gas plasma of N2 and He .
4. A manufacturing process of a thin film transistor according to claim 1, wherein the nitriding treatment of the surface of the contact film is a treatment by an O2 gas plasma
5. A manufacturing process of a thin film transistor according to claim 1, wherein a thin film formed by the treatment of giving a hydrophilic property to the contact film is removed after forming the semiconductor layer and the contact layer.
6. A liquid crystal display comprising:
an insulating substrate;
a control electrode formed on said insulating substrate;
an insulating film formed on said control electrode;
a semiconductor layer formed on said control electrode through said insulating film;
a contact layer having a thin film nitride or oxide on a surface layer formed on said semiconductor layer;
a pair of electrodes forming a semiconductor device with said semiconductor layer;
a picture element electrode connected electrically to either of said pair of electrodes; and
a counter substrate having a counter electrode, etc. for holding a liquid crystal material between itself and said insulating substrate.