1461171142-86f89ff2-ff19-404f-98db-fb1682dd10fe

1. A control apparatus configured to control a plasma processing apparatus,
the plasma processing apparatus comprising an electrode on which a substrate to be processed is disposed, in a process room, a first power supply circuit configured to supply first power to the electrode, a plasma generation unit configured to generate plasma in a space isolated from the electrode in the process room, a second power supply circuit configured to supply second power to the plasma generation unit, comprising:
a detection unit configured to detect parameters output from the first power supply circuit; and
a control unit configured to control the first power and the second power supplied from the first power supply circuit and the second power supply circuit, respectively, such that each of the parameters detected by the detection unit corresponds to each of target values.
2. The control apparatus of claim 1, wherein
the parameters detected from the detection unit include voltage and current.
3. The control apparatus of claim 2, wherein
the control unit decreases the first power supplied from the first power supply circuit when the voltage detected by the detection unit is larger than the target value and increases the first power supplied from the first power supply circuit when the voltage detected by the detection unit smaller than the target value, and
the control unit decreases the second power supplied from the second power supply circuit when the current detected by the detection unit is larger than the target value and increases the second power supplied from the second power supply circuit when the current detected by the detection unit smaller than the target value.
4. The control apparatus of claim 1, wherein
the parameters detected from the detection unit include voltage and a value of product of voltage, current and cos\u03c6 where \u03c6 is phase difference between voltage and current.
5. The control apparatus of claim 4, wherein
the control unit decreases the first power supplied from the first power supply circuit when the voltage detected by the detection unit is larger than the target value and increases the first power supplied from the first power supply circuit when the voltage detected by the detection unit smaller than the target value, and
the control unit decreases the second power supplied from the second power supply circuit when the value of product of voltage, the current and cos\u03c6 detected by the detection unit is larger than the target value and increases the second power supplied from the second power supply circuit when the value of product of voltage, current and cos\u03c6 detected by the detection unit smaller than the target value.
6. A plasma processing apparatus, comprising:
an electrode on which a substrate to be processed is disposed in a process room;
a first power supply circuit configured to supply first power to the electrode;
a plasma generation unit configured to generate plasma in a space isolated from the electrode in the process room, a second power supply circuit configured to supply second power to the plasma generation unit;
a detection unit configured to detect parameters output from the first power supply circuit; and
a control unit configured to control the first power and the second power supplied from the first power supply circuit and second power supply circuit, respectively, such that each of the parameters detected by the detection unit corresponds to each of target values, respectively.
7. A method for controlling a control apparatus configured to control a plasma processing apparatus,
the plasma processing apparatus comprising an electrode on which a substrate to be processed is disposed, in a process room, a first power supply circuit configured to supply first power to the electrode, a plasma generation unit configured to generate a space isolated from the electrode in the process room, and a second power supply circuit configured to supply a second power to the plasma generation unit, comprising:
detecting parameters output from the first power supply circuit; and
controlling the first power and the second power supplied from the first power supply circuit and the second power supply circuit, respectively, such that each of the parameters detected by the detection unit corresponds to each of the target values, respectively.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A solar cell having at least one photovoltaic layer made of an organic material, in particular a polymer material, which absorbs light and in which electron-hole pairs can be produced, said solar cell having two opposite layer surfaces of which one is connected with at least one hole-receiving layer produced inside said photovoltaic layer and the other is connected with at least one electron-receiving layer produced inside said photovoltaic layer, as well as having electrode areas En and Ep, of which one said electrode area is electrically contacted to said hole-receiving layer and the other said electrode area is electrically connected to said electron receiving layer, wherein
said electron-receiving layer is connected via its electrode area to a flat substrate having a front side and a rear side,
said flat substrate is provided with opening structures projecting laterally through from said front side to said rear side,
said hole-receiving layer, said photovoltaic layer, said electron-receiving layer and said electrode area connected to said layer are applied on said front side of said flat substrate in such a manner that at least single said opening structures project laterally through said flat substrate and through said layer system comprising said layers En, n, A, and p,
an electrically conducting p++ layer is applied onto said hole-receiving layer or said hole-receiving layer is designed as a p++ layer which at least partially fills said opening structures projecting laterally through said flat substrate to said rear side of said flat substrate, and
said electrode area for receiving said hole-receiving layer is provided on said rear side of said flat substrate, said electrode area being electrically contacted to said p++ layer reaching through said opening structures.
2. The solar cell according to claim 1, wherein a hole-conducting material, which has better electrical conductivity than the layer material of which said p++ layer is made, is contained inside at least single opening structures.
3. The solar cell according to claim 1, wherein the electrical conductivity of said hole-conducting material inside said opening structures is selected so low that possible short circuits inside said opening structures between said electron-receiving electrode area and said p++ layer do not significantly impair the short circuit current andor the efficiency of said solar cell.
4. The solar cell according to claim 1, wherein the electrical conductivity of said hole-conducting material outside said opening structures is selected so low that possible short circuits outside said opening structures between said electron-receiving electrode area and said p++ layer do not significantly impair the short circuit current andor the efficiency of said solar cell.
5. The solar cell according to claim 1, wherein said electrode areas are designed as metal layers.
6. The solar cell according to claim 1, wherein said p++ layer has a maximum electrical resistance of 106 \u03a9, preferably between 105 and 102 \u03a9, particularly preferably between 103 and 104 \u03a9.
7. The solar cell according to claim 1, wherein said p++ layer has a light transmission for photovoltaic useable sunlight of at least 50%, preferably 70%, particularly preferably 80%.
8. The solar cell according to claim 1, wherein said doped p++ layer contains polythiophenes or polythiophene derivatives.
9. The solar cell according to claim 1, wherein the hole-conducting p++ layer material introduced inside said opening structures contains graphite, metals or doped zinc oxides or doped tin oxides, such as antimony-doped tin oxide or aluminum-doped zinc oxide.
10. The solar cell according to claim 1, wherein said flat substrate is made of a porous material having pores which form said opening structures projecting laterally through said flat substrate.
11. The solar cell according to claim 1, wherein
said opening structures provide opening diameters in the range from 1 to 10 \u03bcm and adjacent said opening structures are spaced between 10 and 100 \u03bcm apart, or
said opening structures provide openings diameters in the range from 0.1 to 1 \u03bcm and adjacent said opening structures are spaced between 1 and 10 \u03bcm apart, or said opening structures provide opening diameters in the range from 10 to 100 \u03bcm and adjacent said opening structures are spaced between 100 and 500 \u03bcm apart, or
said opening structures have opening diameters in the range from 5 to 25 \u03bcm and adjacent said opening structures are spaced between 25 and 100 \u03bcm apart.
12. The solar cell according to claim 1, wherein the present sequence of layers on said front side of said flat substrate comprising said electrode area, said electron-receiving layer, said photovoltaic layer have an overall thickness which is less than half of the opening diameter of said opening structures or in case a p++ layer is provided in addition to said hole-receiving layer, the thickness of said hole-receiving layer must be taken into account in said overall layer thickness.
13. The solar cell according to claim 1, wherein said flat substrate is made of a porous plastic, textile or cellulose material, such as paper, or a surface-treated metal foil.
14. The solar cell according to claim 1, wherein said surface substrate material is elastic.
15. The solar cell according to claim 1, wherein said photovoltaic layer contains polymer material or polymer material compounds.
16. The solar cell according to claim 1, wherein said photovoltaic layer contains a mixture of a fullerene derivative and a PPV polymer.
17. The solar cell according to claim 1, wherein said electron-receiving layer is a LiF layer or an Al-doped or Cs-doped bathophenanthroline layer.
18. The solar cell according to claim 1, wherein said electrode areas are made of aluminum.
19. The solar cell according to of claim 1, wherein
said hole-receiving layer is connected via its electrode area to a flat substrate having a front side and a rear side,
said flat substrate has opening structures projecting laterally through from said front side to said rear side,
said electron-receiving layer, said photovoltaic layer, said hole-receiving layer and said electrode area connected to said layer are applied onto said front side of said flat substrate in such a manner that at least single opening structures project laterally through said flat substrate and through the layer system made of said layers Ep, p, A, and n,
an electrically conducting n++ layer is applied onto said electron-receiving layer or said electron-receiving layer is designed as a n++ layer which at least partially fills said opening structures projecting laterally through said flat substrate to said rear side of said flat substrate, and
said electrode area for said electron-receiving layer is provided on said rear side of said flat surface, said electrode area being electrically contacted to said n++ layer reaching through said opening structures.
20. The solar cell according to claim 19, wherein the features are singly or in combination useable in such a manner that the nature of the conductivity of said electrically conducting materials cited in said claims must be inverted.
21. A method for producing a solar cell having at least one photovoltaic layer made of an organic material, in particular a polymer material, comprised by the process steps:
provision of a flat substrate having a front side and a rear side, which is provided with opening structures projecting laterally through said flat substrate from said front side to said rear side,
application of an electrode area onto said front side of said flat substrate,
two-dimensional application of an electron-receiving layer onto said electrode area on said front side of said flat substrate,
two-dimensional application of said photovoltaic layer onto said electron-receiving layer,
two-dimensional application of a hole-receiving layer or application of a p++ layer onto said photovoltaic layer, respectively two-dimensional application of a p++ layer in the case of the provision of a hole-receiving layer on the latter, in such a manner that said opening structures projecting laterally through said flat substrate to said rear side of said flat surface are filled with said p++ layer material, and
application of an additional electrode area onto said rear side of said flat substrate in such a manner that said p++ layer is contacted to said additional electrode area through said opening structures.
22. The method according to claim 21, wherein in addition to said p++ layer material, an electrically conducting material, is introduced into said opening structures in such a manner that said electrically conducting material contacts said p++ layer as well as said electrode area on said rear side of said flat substrate.
23. The method according to claim 21, wherein said electrode area, said electron-receiving layer, said photovoltaic layer, said hole-receiving layer, said p++ layer andor said electrode are are applied by means of vapor deposition, sputtering or wet chemical processes.
24. The method according to claim 21, wherein a foil is applied onto said rear side of said flat substrate before said flat substrate is coated, and
said foil is removed from said rear side of said flat substrate before applying said additional electrode area onto said rear side of said flat substrate.
25. The method according to claim 21, wherein said contacting of said p++ layer contained in said opening structures projecting laterally through said flat substrate from said front side to said rear side to said electrode area on said rear side of said flat substrate is supported by pastes, varnishes or solutions.
26. The method according to claim 25, wherein said pastes, varnishes or solutions are electrically conducting and at least partially penetrate said opening structures and produce an electrically conducting connection to said p++ layer.
27. The method according to claim 21, wherein on andor inside said p++ layer, at least one thin ITO layer (doped indium tin oxide) andor an inorganic transparent electrically conducting layer is provided.
28. The method according to claim 27, wherein said ITO layer andor said inorganic transparent electrically conducting layer are vapor deposited or sputtered on.
29. The method according to claim 21, wherein said application of said electrode area onto said rear side of said flat substrate occurs by means of vapor deposition or gluing on a metal foil.
30. The method according to claim 29, wherein an electrically conductive adhesive is utilized for gluing on said metal foil.
31. The method according to claim 30, wherein said electrically conductive adhesive at least partially penetrates said opening structures and produces a conducting connection to said p++ layer.
32. The method according to claim 21, wherein said flat substrate is provided by being unrolled from a first roll and after execution of all said process steps, the yielded solar cell is rolled onto a second roll.
33. A method according to the generic part of claim 21, comprised by the method steps:
provision of a flat substrate having a front side and a rear side, which is provided with opening structures projecting laterally through said flat substrate from said front side to said rear side,
application of an electrode area onto said front side of said flat substrate,
two-dimensional application of a hole-receiving layer onto said electrode area on said front side of said flat substrate,
two-dimensional application of said photovoltaic layer onto said hole-receiving layer,
two-dimensional application of an electron-receiving layer or application of a n++ layer onto said photovoltaic layer, respectively two-dimensional application of a n++ layer in the case of the provision of an electron-receiving layer on the latter, in such a manner that said opening structures projecting laterally through said flat substrate to said rear side of said flat surface (are filled with said n++ layer material, and
application of an additional electrode area onto said rear side of said flat substrate in such a manner that said n++ layer is contacted to said additional electrode area through said opening structures.
34. The method according to claim 21, wherein the features can be applied in such a manner that the nature of the conductivity of said electrically conducting materials must be inverted.