1. An electronic device comprising: a blade comprising: a faceplate; and a handle out locked position ejector configured to secure the blade to a chassis, the handle out locked position ejector extending outwardly from the faceplate when the handle out locked position ejector is in a closed position, the handle out locked position ejector comprising: two ejectors; and a mechanical attachment bar binding the two ejectors together; wherein the handle out locked position elector extends perpendicularly from the faceplate when the handle out locked position elector is in the closed position; and wherein the blade is locked to the chassis when the handle out locked position elector is in the closed position.
2. The electronic device of claim 1 wherein each ejector comprises:
an ejector handle; and
an ejector cam and tooth.
3. The electronic device of claim 2 wherein the ejector cam and tooth comprises an ejector tooth configured to engage a locking feature of the chassis.
4. The electronic device of claim 2 wherein the ejector handle is coupled to the ejector cam and tooth such that motion of the ejector handle causes motion of the ejector cam and tooth.
5. The electronic device of claim 4 wherein pivoting of the ejector handle in a first direction causes pivoting of the ejector cam and tooth in a second direction opposite the first direction.
6. The electronic device of claim 2 wherein the ejector cam and tooth comprises a locking mechanism for locking the handle out locked position ejector in place, the electronic device further comprising a sensor to sense a position of the locking mechanism.
7. An electronic device comprising: a blade comprising two handle out locked position ejectors comprising mechanical attachment bars; and a cable management system removably attached to the mechanical attachment bars; wherein each of the handle out locked position electors comprises: two electors; and one of the mechanical attachment bars binding the two electors together; and wherein the cable management system has snapping features configured to snap on and off the mechanical attachment bars.
8. The electronic device of claim 7 wherein the cable management system comprises a captive end and a snapping end.
9. The electronic device of claim 8 wherein the captive end comprises a slot like feature.
10. The electronic device of claim 8 wherein the snapping end comprises a C shaped opening.
11. The electronic device of claim 7 further comprising:
cabling coupled to ports of the blade, the cabling being supported by the cable management system.
12. The electronic device of claim 7 wherein the cable management system comprises apertures configured to secure cables.
13. The electronic device of claim 7 wherein the mechanical attachment bars comprise at least one protruding feature.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An electron beam exposure apparatus, comprising:
a first shaping aperture having a plurality of rectangular openings, each having sizes different from each other and shaping a beam shape of an electron beam;
a rectangular opening selection deflector which controls a path of the electron beam to irradiate the electron beam on one of the plurality of rectangular openings;
a second shaping aperture having a plurality of character openings, each having sizes different from each other and shaping a beam shape of the electron beam passing through the first shaping aperture; and
a character beam deflector which controls the path of the electron beam to irradiate the electron beam on character openings corresponding to the rectangular openings in the first shaping aperture.
2. The electron beam exposure apparatus according to claim 1,
wherein the second shaping aperture includes a character opening of a first size which is suitable for drawing of repetitive structure, a character opening of a second size smaller than the first size which is suitable for drawing of random structure, and a character opening for shaping a variable shaped beam (VSB).
3. The electron beam exposure apparatus according to claim 2,
wherein the character beam deflector uses the character opening of the second size when a combination logic circuit and a sequential circuit are drawn, and uses the character opening of the first size when a memory cell circuit is drawn.
4. The electron beam exposure apparatus according to claim 1, further comprising a deflection controller which controls the rectangular opening selection deflector and the character beam deflector in accordance with a circuit type to be drawn.
5. The electron beam exposure apparatus according to claim 1, further comprising:
an aperture information storage which stores drawing information showing a correspondence relationship between first information indicative of sizes and types of the rectangular openings in the first shaping aperture and second information relating to positions and types of the character openings in the second shaping aperture; and
a drawing controller which controls the rectangular opening selection deflector and the character beam deflector based on drawing information stored in the aperture information storage.
6. The electron beam exposure apparatus according to claim 5,
wherein the aperture information storage stores the drawing information including character ID information indicative of character shape to be drawn; and
the drawing controller reads out the drawing information corresponding to the character ID information and controls the rectangular opening selection deflector and the character beam deflector.
7. The electron beam exposure apparatus according to claim 5,
wherein the aperture information storage has a character table indicative of a correspondence relationship of the character ID information, the first information and the second information.
8. An electron beam exposure method, comprising:
irradiating an electron beam on a first shaping aperture having a plurality of rectangular openings, each having sizes different from each other and shaping a beam shape of the electron beam;
controlling a path of the electron beam to irradiate the electron beam on one of the plurality of rectangular openings;
irradiating the electron beam passing through the first shaping aperture on a second shaping aperture having a plurality of character openings, each having sizes different from each other and shaping a beam shape of the electron beam; and
controlling the path of the electron beam by a character deflector to irradiate the electron beam on character openings corresponding to the rectangular openings in the first shaping aperture.
9. The electron beam exposure method according to claim 8,
wherein the second shaping aperture includes a character opening of a first size which is suitable for drawing of repetitive structure, a character opening of a second size smaller than the first size which is suitable for drawing of random structure, and a character opening for shaping a variable shaped beam (VSB).
10. The electron beam exposure method according to claim 9,
wherein the character beam deflector uses the character opening of the second size when a combination logic circuit and a sequential circuit are drawn, and uses the character opening of the first size when a memory cell circuit is drawn.
11. The electron beam exposure method according to claim 8,
wherein the rectangular opening selection deflector and the character beam deflector are controlled in accordance with the types of the circuit to be drawn.
12. The electron beam exposure method according to claim 8, further comprising:
controlling the rectangular opening selection deflector and the character beam deflector based on drawing information stored in an aperture information storage which stores the drawing information indicative of a correspondence relationship between first information indicative of sizes or types of the rectangular openings in the first shaping aperture and second information relating to positions and types of the character openings in the second shaping aperture.
13. The electron beam exposure method according to claim 12,
wherein the aperture information storage stores the drawing information including character ID information indicative of character shapes to be drawn; and
when controlling the character beam deflector, the drawing information corresponding to the character ID information is read out from the aperture information storage and controls the rectangular opening selection deflector and the character beam deflector.
14. The electron beam exposure method according to claim 12,
wherein the aperture information storage has a character table indicative of a correspondence relationship of the character ID information, the first information and the second information.
15. A method of manufacturing semiconductor device, comprising:
irradiating an electron beam on a first shaping aperture having a plurality of rectangular openings, each having sizes different from each other and shaping a beam shape of the electron beam;
controlling a path of the electron beam to irradiate the electron beam on one of the plurality of rectangular openings;
irradiating the electron beam passing through the first shaping aperture on a second shaping aperture having a plurality of character openings, each having sizes different from each other and shaping a beam shape of the electron beam;
controlling the path of the electron beam by a character deflector to irradiate the electron beam on character openings corresponding to the rectangular openings in the first shaping aperture; and
irradiating the electron beam passing through the character opening on a wafer to fabricate a semiconductor device.
16. The method of manufacturing semiconductor device according to claim 15,
wherein the second shaping aperture includes a character opening of a first size which is suitable for drawing of repetitive structure, a character opening of a second size smaller than the first size which is suitable for drawing of random structure, and a character opening for shaping a variable shaped beam (VSB).
17. The method of manufacturing semiconductor device according to claim 16,
wherein the character beam deflector uses the character opening of the second size when a combination logic circuit and a sequential circuit are drawn, and uses the character opening of the first size when a memory cell circuit is drawn.
18. The method of manufacturing semiconductor device according to claim 15,
wherein the rectangular opening selection deflector and the character beam deflector are controlled in accordance with the types of the circuit to be drawn.
19. The method of manufacturing semiconductor device according to claim 15, further comprising:
controlling the rectangular opening selection deflector and the character beam deflector based on drawing information stored in an aperture information storage which stores the drawing information indicative of a correspondence relationship between first information indicative of sizes or types of the rectangular openings in the first shaping aperture and second information relating to positions and types of the character openings in the second shaping aperture.
20. The method of manufacturing semiconductor device according to claim 19,
wherein the aperture information storage stores the drawing information including character ID information indicative of character shapes to be drawn; and
when controlling the character beam deflector, the drawing information corresponding to the character ID information is read out from the aperture information storage and controls the rectangular opening selection deflector and the character beam deflector.