1. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof, with plural caps being attached to the first main surface of the matrix substrate correspondingly to the wiring substrates; and
(b) causing the dividing portion of the matrix substrate to pivot to the second main surface side to divide the remaining portion and the dividing portion from each other and tearing off the wiring pattern concerned along the associated dividing groove.
2. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof; and
(b) displacing a pivot center in both a direction perpendicular to the second main surface from a dividing position where any of the dividing grooves is formed and a direction of the dividing portion from the dividing position, the pivot center being a center of pivoting the dividing portion of the matrix substrate to the second main surface side, allowing the dividing portion to pivot in this state to divide the remaining portion and the dividing portion from each other, and tearing off the wiring pattern concerned along the associated dividing groove.
3. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof; and
(b) dividing the matrix substrate into the remaining portion and the dividing portion and thereafter tearing off the wiring pattern concerned along the associated dividing groove.
4. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof; and
(b) when dividing the matrix substrate into the remaining portion and the dividing portion along any of the dividing groove, beginning the dividing work with one end of the dividing groove.
5. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to the remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof, with plural caps being attached to the first main surface of the matrix substrate correspondingly to the wiring substrates; and
(b) displacing a pivot center in both a direction perpendicular to the second main surface from a dividing position where any of the dividing grooves is formed and a direction of the dividing portion from the dividing position, the pivot center being a center of pivoting the dividing portion of the matrix substrate to the second main surface side, allowing the dividing portion to pivot in this state to divide the remaining portion and the dividing portion from each other, and tearing off the wiring pattern concerned along the associated dividing groove.
6. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof, with plural caps being attached to the first main surface of the matrix substrate correspondingly to the wiring substrates; and
(b) pivoting the dividing portion of the matrix substrate to the second main surface side to divide the remaining portion and the dividing portion from each other and thereafter tearing off the wiring pattern concerned along the associated dividing groove.
7. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof, with plural caps being attached to the first main surface of the matrix substrate correspondingly to the wiring substrates; and
(b) when pivoting the dividing portion of the matrix substrate to the second main surface side to divide the remaining portion and the dividing portion from each other along any of the dividing grooves, beginning the dividing work with one end of the dividing groove and tearing off the wiring pattern concerned along the associated dividing groove.
8. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof, with plural caps being attached to the first main surface of the matrix substrate correspondingly to the wiring substrates; and
(b) displacing a pivot center in both a direction perpendicular to the second main surface from a dividing position where any of the dividing grooves is formed and a direction of the dividing portion from the dividing position, the pivot center being a center of pivoting the dividing portion of the matrix substrate to the second main surface side, allowing the dividing portion to pivot in this state to divide the remaining portion and the dividing portion from each other, beginning with one end of the dividing groove, and tearing off the wiring pattern concerned along the dividing groove.
9. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition the plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) disposing the matrix substrate onto a dividing support base in a substrate dividing apparatus;
(b) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the second main surface of the remaining portion by the dividing support base, with plural caps being attached to the first main surface correspondingly to the wiring substrates; and (c) pivoting the dividing portion of the matrix substrate to the second main surface side, applying a load to the first main surface of the dividing portion by a loading portion which is provided interlockably with a movable portion of the dividing support base correspondingly to the first main surface of the dividing portion to divide the matrix substrate into the remaining portion and the dividing portion, and tearing off the wiring pattern concerned along the associated dividing groove.
10. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) disposing the matrix substrate onto a dividing support base in a substrate dividing apparatus;
(b) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the second main surface of the remaining portion by the dividing support base; and
c) pivoting the dividing portion of the matrix substrate to the second main surface side, applying a load to one end of the first main surface of the dividing portion by a loading portion which is provided interlockably with a movable portion of the dividing support base correspondingly to the first main surface of the dividing portion to divide the matrix substrate. into the remaining portion and the dividing portion, beginning with one end of the associated dividing groove, and tearing off the wiring pattern concerned along the dividing groove.
11. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) mounting a surface-mounted type electronic part and a bare chip-mountable semiconductor pellet onto each of the wiring substrates;
(b) attaching a plurality of caps to the first main surface of the matrix substrate correspondingly to the wiring substrates;
(c) causing a dividing portion contiguous to a remaining portion of the matrix substrate with the plural caps attached to the first main surface to project and supporting the remaining portion by the second main surface thereof; and
(d) pivoting the dividing portion of the matrix substrate to the second main surface side to divide the matrix substrate into the remaining portion and the dividing portion and tearing off the wiring pattern concerned along the associated dividing groove.
12. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof; and
(b) displacing a pivot center in both a direction perpendicular to the second main surface from a dividing position where any of the dividing grooves is formed and a direction of the dividing portion from the dividing position, the pivot center being a center of pivoting the dividing portion of the matrix substrate to the second main surface side, allowing the dividing portion to pivot in this state to divide the remaining portion and the dividing portion from each other, and thereafter tearing off the wiring pattern concerned along the associated dividing groove.
13. A method of manufacturing a semiconductor device which is assembled by dividing a matrix substrate along dividing grooves, the matrix substrate having wiring patterns formed on a second main surface thereof in a manner spanning the dividing grooves, the second main surface being located on the side opposite to a first main surface of the matrix substrate on which the dividing grooves to partition plural wiring substrates of the matrix substrate are formed, the method comprising the steps of:
(a) causing a dividing portion contiguous to a remaining portion of the matrix substrate to project and supporting the remaining portion by the second main surface thereof; and
(b) displacing a pivot center in both a direction perpendicular to the second main surface from a dividing position where any of the dividing grooves is formed and a direction of the dividing portion from the dividing position, the pivot center being a center of pivoting the dividing portion of the matrix substrate to the second main surface side, allowing the dividing portion to pivot in this state to divide the remaining portion and the dividing portion from each other, beginning with one end of the associated dividing groove, and tearing off the wiring pattern concerned along the dividing groove.
14. A method of manufacturing a semiconductor device, comprising the steps of:
(a) supporting a matrix substrate with plural caps mounted on a first main surface thereof correspondingly to wiring substrates, the wiring substrates being formed on the matrix substrate and each having a semiconductor pellet mounted thereon; and
(b) bending the matrix substrate automatically to the side opposite to the first main surface and tearing of f a wiring pattern concerned out of wiring patterns formed on a second main surface of the matrix substrate located on the side opposite to the first main surface.
15. A method of manufacturing a semiconductor device, comprising the steps of:
(a) supporting a matrix substrate with plural caps mounted on a first main surface thereof correspondingly to wiring substrates, the wiring substrates being formed on the matrix substrate and each having an integrated circuit pellet mounted thereon;
(b) bending and dividing the matrix substrate automatically while displacing a center of the division from a dividing point, the matrix substrate having wiring patterns formed on a surface thereof located on the side smaller than 180 degrees in terms of a surface-to-surface angle, the wiring patterns spanning dividing grooves, and tearing off the wiring pattern concerned.
16. The method of claim 15, wherein the matrix substrate is divided along the dividing grooves while displacing the center of the division in both a direction perpendicular to the second main surface opposite to the first main surface from the dividing point and an outward direction from the dividing point.
17. A method of manufacturing a semiconductor device, comprising the steps of:
(a) supporting a matrix substrate with plural caps mounted on a first main surface thereof correspondingly to wiring substrates, the wiring substrates each having an integrated circuit pellet mounted thereon; and
(b) bending and dividing the matrix substrate automatically in accordance with a process comprising the following steps, the matrix substrate having wiring patterns formed on its bent side so as to span dividing grooves:
(i) dividing the matrix substrate; and
(ii) tearing off the wiring patterns.
18. A method of manufacturing a semiconductor device, comprising the steps of:
(a) supporting a matrix substrate with plural caps mounted on a first main surface thereof correspondingly to wiring substrates, the wiring substrates each having an integrated circuit pellet mounted thereon; and
(b) bending and dividing the matrix substrate automatically with use of a dividing tool and in accordance with a process comprising the following steps, the matrix substrate having wiring patterns formed on its bent side so as to span dividing grooves:
(i) forming a crack in one end of each of the dividing grooves of the matrix substrate; and
(ii) allowing the crack to be propagated to an opposite end of the dividing groove.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fracturing an earth formation, comprising:
isolating a section of a borehole in the earth formation;
introducing a fluid into the isolated section;
increasing fluid pressure in the isolated section, and maintaining the isolated section at a substantially constant first pressure, the first pressure being of at least a magnitude sufficient to cause a fracture to form in the earth formation;
pressurizing the isolated section from the first pressure to a second pressure, the second pressure being a fracture pressure that is greater than the first pressure;
introducing a stress concentration to a borehole wall at at least one location in the isolated section when the fluid is at the second pressure or during the pressurization upon at least one of the fluid pressure reaching the second pressure and a selected flow rate or pressurization rate, wherein introducing the stress concentration to the borehole wall includes perforating the borehole wall at the at least one location; and
initiating a hydraulic fracture in the earth formation at the at least one location.
2. The method of claim 1, wherein the first pressure is a mini-frac pressure.
3. The method of claim 2, wherein the first pressure is a leak-off pressure.
4. The method of claim 1, wherein the second pressure is at least sufficient to initiate the hydraulic fracture, and introducing the stress concentration includes perforating the borehole wall substantially concurrently with the fluid pressure reaching the second pressure.
5. The method of claim 1, wherein increasing the fluid pressure includes increasing the fluid pressure to at least the fracture pressure at a selected rate, and introducing the stress concentration includes perforating the borehole wall when the pressure increase is at the selected rate.
6. The method of claim 1, wherein the at least one location is at least one of an axial location along a longitudinal axis of the borehole and a circumferential location about the longitudinal axis.
7. The method of claim 1, wherein perforating the borehole wall include perforating the borehole wall at a plurality of locations arranged circumferentially about a longitudinal axis of the borehole.
8. The method of claim 1, wherein perforating the borehole well includes detonating a shaped charge.
9. The method of claim 1, wherein isolating includes actuating one or more packers.
10. An apparatus for fracturing an earth formation, comprising:
an isolation assembly configured to isolate a section of a borehole in the earth formation;
a fracturing assembly configured to be disposed at the isolated section, the fracturing assembly in fluid communication with a fluid source and including at least one passage to introduce fluid into the isolated section, the fracturing assembly configured to introduce a fluid into the isolated section and pressurize the isolated section to a substantially constant first pressure, the first pressure being of at least a magnitude sufficient to cause a fracture to form in the formation, and increase fluid pressure in the isolated section from the first pressure to a second pressure to initiate a hydraulic fracture in the earth formation; and
at least one perforation device disposable at a selected location within the isolated section and configured to introduce a stress concentration to a borehole wall at at least one location in the isolated section when the fluid is at the selected pressure or during the increasing of the fluid pressure, in response to at least one of the fluid pressure reaching at least the fracture pressure and a selected flow rate or pressurization rate.
11. The apparatus of claim 10, wherein the at least one perforation device is configured to actuate in response to a trigger, and the trigger is selected from at least one of a pressure magnitude and a rate or pressure increase.
12. The apparatus of claim 10, wherein the at least one perforation device includes a plurality of perforation devices circumferentially arranged about a longitudinal axis of the borehole and directly substantially radially outwardly from the longitudinal axis.
13. The apparatus of claim 10, wherein the at least one perforation device includes at least one shaped explosive charge.
14. The apparatus of claim 10, further comprising at least one control unit configured to control at least one of the fracturing assembly and the at least one perforation device.
15. The apparatus of claim 14, wherein the control unit is configured to actuate the at least one perforation device substantially concurrently with the fluid pressure reaching at least the second pressure.
16. The apparatus of claim 14, wherein the control unit is configured to increase the fluid pressure to at least the second pressure, and actuate the at least one perforation device when the fluid pressure is at least the second pressure.
17. The apparatus of claim 14, wherein the control unit is configured to increase the fluid pressure to at least the second pressure at a selected rate, and actuate the at least one perforation device when the pressure increase is at the selected rate.
18. The apparatus of claim 10, wherein the isolation assembly includes at least one packer.