1. A method of manufacturing a semiconductor light emitting device having a protrusion and recess structure, the method comprising:
forming a lower clad layer on a substrate;
forming an active layer and an upper clad layer on the lower clad layer;
forming a protrusion and recess structural pattern on a portion of the top surface of the upper clad layer by etching a portion of the lower clad layer; and
forming a first electrode on the upper clad layer and forming a second electrode on the protrusion and recess structural pattern of the lower clad layer.
2. The method of claim 1, wherein the forming of the protrusion and recess structural pattern comprises:
exposing the portion of the lower clad layer using a first etching process; and
forming the protrusion and recess structural using a second etching process.
3. The method of claim 2, wherein the second etching process is one of a dry etching process and a wet etching process.
4. The method of claim 3, wherein the wet etching process is performed using one of an aqueous H3PO4 solution and an aqueous KOH solution.
5. The method of claim 3, wherein the wet etching process is performed in a range of 100 to 300\xb0 C.
6. The method of claim 1, wherein forming of the protrusion and recess structural pattern comprises forming of the protrusion and recess structural pattern all the way around a portion of the lower clad layer occupied by the active layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of making a ceramic composition for use in producing a sintered ceramic body, the method comprising contacting a zircon powder with a sintering aid, wherein:
(a) the sintering aid comprises a sol comprising a plurality of suspended TiO2 nanoparticles, and
(b) the zircon powder has an average particle size of from about 3 \u03bcm to about 10 \u03bcm.
2. The method of claim 1, wherein the suspended TiO2 nanoparticles have an average particle size of from about 10 nm to about 200 nm.
3. The method of claim 1, wherein the suspended TiO2 nanoparticles have an average particle size of from about 20 nm to about 80 nm.
4. The method of claim 1, wherein the sintering aid comprises at least one oxide of iron.
5. The method of claim 1, wherein the sintering aid comprises from about 0.01 wt. % to about 2 wt. %.
6. The method of claim 1, wherein the sintering aid comprises from about 0.01 wt. % to about 0.5 wt. %.
7. The method of claim 1, wherein the contacting comprises a spray drying technique.
8. The method of claim 1, wherein, after contacting, the zircon powder is substantially uniformly coated with the sintering aid.
9. The method of claim 1, further comprising, after contacting, forming the contacted zircon powder and sintering aid into a desired shape.
10. The method of claim 9, further comprising firing the desired shape at a time and temperature sufficient to form a ceramic body.
11. The method of claim 10 wherein the ceramic body has a creep rate of less than 1\xd710\u22126hr at 1,180\xb0 C. and 1000 psi.
12. A method of making a ceramic composition for use in producing a sintered ceramic body, the method comprising contacting a zircon powder with a sintering aid, wherein:
(a) the sintering aid comprises titanium isopropoxide in isopropyl alcohol, and
(b) the zircon powder has an average particle size of from about 3 \u03bcm to about 10 \u03bcm.
13. The method of claim 12, wherein the sintering aid comprises at least one oxide of iron.
14. The method of claim 12, wherein the sintering aid comprises from about 0.01 wt. % to about 2 wt. %.
15. The method of claim 12, wherein the sintering aid comprises from about 0.01 wt. % to about 0.5 wt. %.
16. The method of claim 12, wherein the contacting comprises a spray drying technique.
17. The method of claim 12, wherein, after contacting, the zircon powder is substantially uniformly coated with the sintering aid.
18. The method of claim 12, further comprising, after contacting, forming the contacted zircon powder and sintering aid into a desired shape.
19. The method of claim 18, further comprising firing the desired shape at a time and temperature sufficient to form a ceramic body.
20. The method of claim 19 wherein the ceramic body has a creep rate of less than 1\xd710\u22126hr at 1,180\xb0 C. and 1000 psi.
21. A method for making a ceramic body comprising:
(a) forming a ceramic composition into a desired shape, and
(b) firing the desired shape at a time and temperature sufficient to form a ceramic body, wherein:
(i) the ceramic composition comprises a zircon powder which has an average particle size of from about 3 \u03bcm to about 10 \u03bcm,
(ii) the zircon powder is coated with a sintering aid which at the time of the coating comprises a sol comprising a plurality of suspended TiO2 nanoparticles, and
(iii) the ceramic body has a creep rate of less than 1\xd710\u22126hr at 1,180\xb0 C. and 1000 psi.
22. The method of claim 21, wherein the forming comprises at least one of an extrusion process, an iso-press process, a slip casting process, or a combination thereof.
23. The method of claim 21, wherein the forming comprises an iso-press process.
24. The method of claim 21, wherein the desired shape comprises an isopipe.
25. The method of claim 21, wherein the firing comprises heating the desired shape at a temperature of from about 1,400\xb0 C. to about 1,650\xb0 C. for a period of from about 1 to about 48 hours.
26. A method for making a ceramic body comprising:
(a) forming a ceramic composition into a desired shape, and
(b) firing the desired shape at a time and temperature sufficient to form a ceramic body, wherein:
(i) the ceramic composition comprises a zircon powder which has an average particle size of from about 3 \u03bcm to about 10 \u03bcm,
(ii) the zircon powder is coated with a sintering aid which at the time of the coating comprises titanium isopropoxide in isopropyl alcohol, and
(iii) the ceramic body has a creep rate of less than 1\xd710\u22126hr at 1,180\xb0 C. and 1000 psi.
27. The method of claim 26, wherein the forming comprises at least one of an extrusion process, an iso-press process, a slip casting process, or a combination thereof.
28. The method of claim 26, wherein the forming comprises an iso-press process.
29. The method of claim 26, wherein the desired shape comprises an isopipe.
30. The method of claim 26, wherein the firing comprises heating the desired shape at a temperature of from about 1,400\xb0 C. to about 1,650\xb0 C. for a period of from about 1 to about 48 hours.