1. An optical information recording medium comprising a substrate having provided thereon a recording layer in which information can be recorded by laser light irradiation,
wherein the recording layer contains a dye represented by the following formula (I):
wherein Dye represents a dye residue having a molar extinction of 10000 (cm\u22121\xb7mol\u22121) or more for light having a wavelength of 450 nm to 900 nm; L represents a divalent connecting group or a single bond; UV represents a dye residue having a molar extinction of 10000 (cm\u22121\xb7mol\u22121) or more as a molar extinction coefficient for light having a wavelength of 280 nm to 450 nm; and m denotes an integer from 1 to 8,
wherein in the dye represented by formula (I), Dye has a structure represented by the following formula (II) and UV represents a monovalent group derived from a structure represented by any one of the following formulae (A) to (G):
formula (II): A-N\u2550N\u2014B,
wherein A and B respectively represent an aromatic ring or a hetero ring;
wherein in formula (A), R1, R2, R3 and R4 respectively represent a substituent; and n denotes an integer from 0 to 5, and when n is 2 or more, multiple R1s may be the same or different;
wherein the bond on the left side of L is bound with A or B in formula (II) and the bond on the right side of L is bound with the benzene ring or any one of R1, R2, R3 and R4 in formula (A); and when L is bound with A, B, R1, R2, R3 and R4, then A, B, R1, R2, R3 or R4 with which L is bound represents a divalent group;
wherein in formula (B), R5 and R6 are respectively a hydrogen atom or a substituent; and p\u2032 and o\u2032 respectively denote an integer from 0 to 4:
wherein in formula (C), R7 and R8 respectively represent a hydrogen atom or a substituent; and r\u2032 and q\u2032 respectively denote an integer from 0 to 4;
wherein in formula (D), R305 and R306 respectively represent a cyano group, a substituted or unsubstituted alkoxycarbonyl group, a substituted or unsubstituted carbamoyl group or a substituted or unsubstituted acyl group; R307 represents a substituent; and s\u2032 denotes an integer from 0 to 4
wherein in formula (E), R308, R309 and R310 respectively represent a hydrogen atom, a cyano group, a substituted or unsubstituted alkoxycarbonyl group, a substituted or unsubstituted carbamoyl group or a substituted or unsubstituted acyl group; Ar represents a substituted or unsubstituted heterocyclic group or a substituted or unsubstituted aryl group; t\u2032 denotes an integer from 0 to 4; X1 represents an oxygen atom, a sulfur atom or \u2014N(R321)\u2014; and R321 represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group;
wherein in formula (F), R311 and R312 respectively represent a hydrogen atom or a substituent; X2 represents a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group or a substituted or unsubstituted amino group including an anilino group; R313 is a hydrogen atom or a substituent; and u\u2032 is an integer from 0 to 4;
wherein in formula (G), R314 and R315 are respectively a substituent; v\u2032 denotes an integer from 0 to 4; and x\u2032 denotes an integer from 0 to 2.
2. The optical information recording medium of claim 1, wherein the maximum absorption wavelength of Dye in the dye represented by formula (I) is 450 nm to 900 nm.
3. The optical information recording medium of claim 1, wherein the maximum absorption wavelength of UV in the dye represented by formula (I) is 280 nm or more and less than 450 nm.
4. The optical information recording medium of claim 1, wherein the medium is produced by applying with a spin-coating method a coating solution containing the dye represented by formula (I) and an organic solvent.
5. The optical information recording medium of claim 1, wherein UV represents a monovalent group derived from formula (A):
6. The optical information recording medium of claim 5, wherein A in formula (II) is represented by any one of the following formulae:
wherein R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, R26, R27 and R28 respectively represent a hydrogen atom or a substituent.
7. The optical information recording medium of claim 5, wherein B in formula (II) is represented by any one of the following structures:
wherein R61, R62, R63, R64, R65, R66, R71, R72, R201, R202, R203, R204 and R205 respectively represent a hydrogen atom or a substituent.
8. The optical information recording medium of claim 1, wherein Dye in formula (I) is represented by the following formula (\u03b1):
wherein in formula (\u03b1), D represents, together with a carbon atom to which D bonds, an atomic group necessary to form a hydrocarbon aromatic ring or a hetero ring; R19 represents a substituted or unsubstituted alkyl group or a substituted or unsubstituted aryl group; R20 represents a cyano group, a hydrogen atom, a substituted or unsubstituted alkoxycarbonyl group or a substituted or unsubstituted carbamoyl group; and R21a, R21b, R22a and R22b respectively represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group.
9. The optical information recording medium of claim 1, wherein the dye represented by formula (I) is selected from the following dyes 1 to 25:
Dye
\u2014R1
\u2014R2
\u2014R3
\u2014R4
\u20021.
\u20022.
\u20023.
\u20024.
\u20025.
Dye
\u2014R1
\u2014R2
\u2014R3
\u2014R4
\u20026.
\u20027.
\u20028.
\u20029.
10.
Dye
\u2014R1
\u2014R2
\u2014R3
\u2014R4
11.
12.
13.
14.
15.
Dye
\u2014R1
\u2014R2
\u2014R3
\u2014R4
16.
17.
18.
19.
20.
Dye
\u2014R1
\u2014R2
21.
22.
23.
24.
25.
10. The optical information recording medium of claim 1, wherein the dye represented by formula (I) is selected from the following dyes 26 to 30:
Dye
\u2014R1
\u2014R2
26.
27.
28.
29.
30.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A radio frequency (RF) transceiver front-end device adapted to receive, in a receiving mode, an external first RF signal so as to generate a reception signal, and to receive, in a transmitting mode, an external transmission signal so as to radiate a second RF signal, said RF transceiver front-end device comprising:
an antenna used to receive the first RF signal and to radiate the second RF signal;
a first transformer circuit coupled to said antenna, and operable to generate a first induction signal based at least on the first RF signal received by said antenna when said RF transceiver front-end device is in the receiving mode;
a low noise amplifier (LNA) circuit;
a first switch unit coupled between said first transformer circuit and said LNA circuit, and operable to transmit the first induction signal from said first transformer circuit to said LNA circuit when said RF transceiver front-end device is in the receiving mode, such that said LNA circuit amplifies the first induction signal to generate an amplified signal;
a demodulation circuit coupled to said LNA circuit for receiving the amplified signal therefrom, and demodulating the amplified signal to generate the reception signal;
a modulation circuit used to receive and modulate the transmission signal so as to generate a modulated signal;
a power amplifier circuit coupled to said modulation circuit for receiving the modulated signal therefrom, said power amplifier circuit being operable to amplify power of the modulated signal so as to generate an amplified output when said RF transceiver front-end device is in the transmitting mode; and
a second transformer circuit coupled between said power amplifier circuit and said first transformer circuit, and receiving the amplified output from said power amplifier circuit, said second transformer circuit being operable to generate a second induction signal based at least on the amplified output and outputting the second induction signal to said first transformer circuit when said RF transceiver front-end device is in the transmitting mode;
wherein, when said RF transceiver front-end device is in the transmitting mode, said first transformer circuit transmits the second induction signal from said second transformer circuit to said antenna such that the second induction signal is radiated by said antenna to serve as the second RF signal.
2. The RF transceiver front-end device of claim 1, wherein:
said first transformer circuit includes a first transformer that has a primary winding and a secondary winding, each of which has a dotted end and a non-dotted end opposite to said dotted end, said dotted end of said primary winding being coupled to said antenna for receiving the first RF signal therefrom, said non-dotted end of said secondary winding being used to receive an external variable first reference voltage;
said first switch unit includes a first transistor coupled between said dotted end of said secondary winding and ground, said first transistor having a control terminal used to receive an external first control signal and a substrate terminal, and being operable to be conducting or non-conducting in response to the first control signal;
when said RF transceiver front-end device is in the receiving mode,
said secondary winding of said first transformer generates the first induction signal at said dotted end thereof based further on the first reference voltage, which has a non-zero magnitude, and
said first transistor of said first switch unit is non-conducting such that the first induction signal is transmitted to said LNA circuit from said dotted end of said secondary winding of said first transformer; and
when said RF transceiver front-end device is in the transmitting mode, said non-dotted end of said secondary winding of said first transformer is grounded because the magnitude of the first reference voltage becomes zero, and said first transistor of said first switch unit conducts.
3. The RF transceiver front-end device of claim 2, wherein said first switch unit further includes:
a first resistor having opposite terminals, one of which is coupled to said control terminal of said first transistor, and the other one of which is used to receive the first control signal; and
a second resistor coupled between said substrate terminal of said first transistor and ground.
4. The RF transceiver front-end device of claim 2, wherein:
said second transformer circuit includes a second transformer that has a primary winding and a secondary winding, said primary winding of said second transformer having a dotted end, a non-dotted end and an intermediate tap, said secondary winding of said second transformer having a dotted end that is electrically connected to said non-dotted end of said primary winding of said first transformer of said first transformer circuit, and a grounded non-dotted end;
said power amplifier circuit includes
a second transistor having a first terminal that is used to receive an external bias voltage, a second terminal that is coupled to said intermediate tap of said primary winding of said second transformer of said second transformer circuit, and a control terminal that is used to receive an external second control signal such that said second transistor is operable to be conducting or non-conducting in response to the second control signal,
a third transformer having a primary winding and a secondary winding, said primary winding of said third transformer having a dotted end that is coupled to said modulation circuit for receiving the modulated signal therefrom, and a grounded non-dotted end, said secondary winding of said third transformer having a dotted end, a non-dotted end, and an intermediate tap that is used to receive an external second reference voltage, said third transformer being operable to generate, based on the modulated signal and further on the second reference voltage, a positive phase induction signal and a negative phase induction signal respectively at said dotted and non-dotted ends of said secondary winding thereof, and
a second switch unit having a first input end and a second input end that are coupled respectively to said dotted and non-dotted ends of said secondary winding of said third transformer for receiving the positive and negative phase induction signals respectively therefrom, and a first output end and a second output end that are coupled respectively to said dotted and non-dotted ends of said primary winding of said second transformer;
when said RF transceiver front-end device is in the receiving mode,
said second transistor of said power amplifier circuit is non-conducting such that said intermediate tap of said primary winding of said second transformer of said second transformer circuit is floating, and
said second switch unit of said power amplifier circuit is operable, based at least on the second reference voltage, in a low impedance state such that no current flows through said primary winding of said second transformer of said second transformer circuit; and
when said RF transceiver front-end device is in the transmitting mode,
said second transistor of said power amplifier circuit conducts such that the bias voltage is applied to said intermediate tap of said primary winding of said second transformer of said second transformer circuit, and
said second switch unit of said power amplifier circuit is operable, based at least on the positive and negative phase induction signals, in a high impedance state such that a positive phase output signal and a negative phase output signal are outputted respectively at said second and first output ends, the positive and negative phase output signals cooperatively constituting the amplified output, and
said second transformer of said second transformer circuit generates, based on the positive and negative phase output signals and the bias voltage, the second induction signal at said dotted end of said secondary winding thereof.
5. The RF transceiver front-end device of claim 4, wherein said first transformer circuit further includes a capacitor that is coupled between said non-dotted end of said primary winding of said first transformer of said first transformer circuit and said dotted end of said secondary winding of said second transformer of said second transformer circuit.
6. The RF transceiver front-end device of claim 4, wherein said second switch unit includes:
a series connection of a first resistor and a first capacitor coupled between said first input end and said first output end;
a series connection of a second resistor and a second capacitor coupled between said second input end and said second output end;
a third transistor electrically connected between said first output end and ground, said third transistor having a control terminal that is coupled to said first input end; and
a fourth transistor electrically connected between said second output end and ground, said fourth transistor having a control terminal that is coupled to said second input end;
wherein, when said second switch unit is in the low impedance state, said third and fourth transistors are each driven by the second reference voltage to operate in a linear region such that said first and second output ends are grounded; and
wherein, when said second switch unit is in the high impedance state, said third and fourth transistors are driven respectively by the positive and negative phase induction signals to each operate in a saturation region such that the positive and negative phase output signals are outputted respectively at said second and first output ends.
7. The RF transceiver front-end device of claim 6, wherein said second switch unit further includes:
a fifth transistor coupled between said first output end and said third transistor, said fifth transistor having a control terminal used to receive an external third control signal such that said fifth transistor is operable to be conducting or non-conducting in response to the third control signal; and
a sixth transistor coupled between said second output end and said fourth transistor, said sixth transistor having a control terminal used to receive the third control signal such that said sixth transistor is operable to be conducting or non-conducting in response to the third control signal;
wherein, when said second switch unit is in the low impedance state, said fifth and sixth transistors are each driven by the third control signal to operate in a linear region such that said first and second output ends are grounded; and
wherein, when said second switch unit is in the high impedance state, said fifth and sixth transistors are driven by the third control signal to each operate in a saturation region, such that the positive and negative phase output signals are outputted respectively at said second and first output ends.
8. The RF transceiver front-end device of claim 2, wherein:
said second transformer circuit includes a second transformer that has a primary winding and a secondary winding, said primary winding of said second transformer having a dotted end and a non-dotted end, said secondary winding of said second transformer having a dotted end that is electrically connected to said non-dotted end of said primary winding of said first transformer of said first transformer circuit, and a grounded non-dotted end;
said power amplifier circuit includes
a second transistor having a first terminal that is used to receive an external bias voltage, a second terminal, and a control terminal that is used to receive an external second control signal such that said second transistor is operable to be conducting or non-conducting in response to the second control signal,
a third transformer having a primary winding and a secondary winding, said primary winding of said third transformer having a dotted end that is coupled to said modulation circuit for receiving the modulated signal therefrom, and a grounded non-dotted end, said secondary winding of said third transformer having a dotted end, a non-dotted end, and an intermediate tap used to receive an external second reference voltage, said third transformer being operable to generate, based on the modulated signal and further on the second reference voltage, a positive phase induction signal at said dotted end of said secondary winding thereof, and a negative phase induction signal at said non-dotted end of said secondary winding thereof, and
a second switch unit having a first input end and a second input end that are coupled respectively to said dotted and non-dotted ends of said secondary winding of said third transformer for receiving the positive and negative phase induction signals respectively therefrom, a first output end and a second output end that are coupled respectively to said dotted and non-dotted ends of said primary winding of said second transformer, and a control end that is coupled to said second terminal of said second transistor of said power amplifier circuit;
when said RF transceiver front-end device is in the receiving mode, for said power amplifier circuit,
said second transistor is non-conducting such that said control end of said second switch unit is floating, and
said second switch unit is operable, base at least on the second reference voltage, in a low impedance state such that no current flows through said primary winding of said second transformer of said second transformer circuit; and
when said RF transceiver front-end device is in the transmitting mode, for said power amplifier circuit,
said second transistor conducts such that the bias voltage is applied to said control end of said second switch unit,
said second switch unit is operable, based at least on the positive and negative phase induction signals and the bias voltage, in a high impedance state such that a positive phase output signal and a negative phase output signal are outputted respectively at said second and first output ends, the positive and negative phase output signals cooperatively constituting the amplified output, and
said second transformer of said second transformer circuit generates, based on the positive and negative phase output signals, the second induction signal at said dotted end of said secondary winding thereof.
9. The RF transceiver front-end device of claim 8, wherein said first transformer circuit further includes a capacitor that is coupled between said non-dotted end of said primary winding of said first transformer of said first transformer circuit and said dotted end of said secondary winding of said second transformer of said second transformer circuit.
10. The RF transceiver front-end device of claim 8, wherein said second switch unit includes:
a series connection of a first resistor and a first capacitor coupled between said first input end and said first output end;
a series connection of a second resistor and a second capacitor coupled between said second input end and said second output end;
a third transistor coupled between said first output end of said second switch unit and ground, said third transistor having a control terminal that is coupled to said first input end;
a fourth transistor coupled between said second output end of said second switch unit and ground, said fourth transistor having a control terminal that is coupled to said second input end;
a fifth transistor coupled between said first output end and said control end of said second switch unit, said fifth transistor having a control terminal;
a sixth transistor coupled between said second output end and said control end of said second switch unit, said sixth transistor having a control terminal;
a third resistor having opposite terminals, one of which is coupled to said control terminal of said fifth transistor, and the other of which is used to receive an external third control signal such that the third control signal is transmitted to said control terminal of said fifth transistor through said third resistor;
a fourth resistor having opposite terminals, one of which is coupled to said control terminal of said sixth transistor, and the other of which is used to receive the third control signal such that the third control signal is transmitted to said control terminal of said sixth transistor through said fourth resistor;
a third capacitor coupled between said control terminals of said third and fifth transistors; and
a fourth capacitor coupled between said control terminals of said fourth and sixth transistors;
wherein, when said second switch unit is in the low impedance state, said third and fourth transistors are driven by the second reference voltage to each operate in a linear region while said fifth and sixth transistors are driven by the third control signal to each operate in a linear region, such that said first and second output ends are grounded and no current flows through said secondary winding of said second transformer; and
wherein, when said second switch unit is in the high impedance state, said third and fourth transistors are driven respectively by the positive and negative phase induction signals to each operate in a saturation region while said fifth and sixth transistors are driven by the third control signal to each operate in a saturation region, such that the positive and negative phase output signals are outputted respectively at said second and first output ends.
11. The RF transceiver front-end device of claim 2, wherein:
said second transformer circuit includes a second transformer that has a primary winding and a secondary winding, said primary winding of said second transformer having a dotted end and a non-dotted end, said secondary winding of said second transformer having a dotted end that is electrically connected to said non-dotted end of said primary winding of said first transformer of said first transformer circuit, and a grounded non-dotted end;
said power amplifier circuit has an input end coupled to said modulation circuit for receiving the modulated signal therefrom, and a first output end and a second output end that are coupled respectively to said dotted and non-dotted ends of said primary winding of said second transformer, said power amplifier circuit including
a complementary metal-oxide-semiconductor (CMOS) circuit having an input node that is used to receive a second control signal, and an output node that is coupled to said first output end, said CMOS circuit being operable to generate an output voltage at said output node in response to the second control signal,
a series connection of a resistor and a capacitor coupled between said input end and said second output end, and
a second transistor and a third transistor coupled in series with each other and coupled respectively to said second output end and ground, said second transistor having a control terminal that is used to receive an external third control signal such that said second transistor is operable to be conducting or non-conducting in response to the third control signal, said third transistor having a control terminal that is coupled to said input end for receiving the modulated signal from said modulation circuit and that is used to further receive an external fourth control signal;
when said RF transceiver front-end device is in the receiving mode, said power amplifier circuit is operable, based on the second, third and fourth control signals, in a low impedance state, where the output voltage outputted at said output node of said CMOS circuit becomes zero in response to the second control signal while said second and third transistors are driven respectively by the third and fourth control signals to each operate in a linear region such that said first and second output ends are grounded, whereby no current flows through said primary winding of said second transformer of said second transformer circuit; and
when said RF transceiver front-end device is in the transmitting mode,
said power amplifier circuit is operable, based on the second and third control signals and the modulated signal, in a high impedance state, where the output voltage at said output node of said CMOS circuit becomes a bias voltage greater than zero in response to the second control signal such that the bias voltage is outputted at said first output end while said second and third transistors are driven respectively by the third control signal and the modulated signal to each operate in a saturation region, thereby the amplified output is outputted at said second output end, and
said second transformer of said second transformer circuit generates, based on the positive and negative phase output signals, the second induction signal at said dotted end of said secondary winding thereof.
12. The RF transceiver front-end device of claim 11, wherein said first transformer circuit further includes a capacitor that is coupled between said non-dotted end of said primary winding of said first transformer of said first transformer circuit and said dotted end of said secondary winding of said second transformer of said second transformer circuit.
13. The RF transceiver front-end device of claim 11, wherein said CMOS circuit includes:
a P-type metal-oxide-semiconductor field effect transistor (MOSFET) and an N-type MOSFET, each of which has a source, a drain and a gate, said gates of said P-type MOSFET and said N-type MOSFET being coupled to said input node, said drains of said P-type MOSFET and said N-type MOSFET being coupled to said output node, said source of said P-type MOSFET being used to receive the bias voltage, said source of said N-type MOSFET being grounded.
14. The RF transceiver front-end device of claim 1, wherein said first and second transformer circuits, said first switch unit, said LNA circuit, said demodulation and modulation circuits and said power amplifier circuit are integrated into a single chip.