We claim:
1. A connecting structure comprising:
a driving transmission (11) and a roll (100) connected through it, which driving transmission (11) includes an input shaft (12) in the drive, whereby the drive is transmitted through the input shaft (12) to toothed gears and further to the roll jacket (100a) of the driven roll (100) to rotate this, and which roll (100) includes a central static shaft (100b) and a bearing (G) to support it, wherein in order to allow axial and radial motions of the roll’s (100) roll jacket when the driving transmission (11) is located in the fixed position, a seal (25) including a sliding ring (30) is fitted between the driving transmission (11) and the roll (100).
2. Connecting structure according to claim 1, wherein the drive is transferred through the teeth (13) of the input shaft (12) to a central toothed gear (16) by way of its teeth (16a), from which toothed gear (16) the drive is transferred further to a sleeve shaft (20), whereby the internal teeth (16b) of the toothed gear (16) are functionally connected with the circumferential teeth (21a) of the sleeve shaft (20), and the drive is transmitted further from the sleeve shaft (20) through second outer circumferential teeth (21b) to a flange plate (22), whereby the teeth (23) of the flange plate (22) are functionally connected with the teeth (21b) of the sleeve shaft (20), and in that the flange plate (22) is connected to the roll jacket (100a) of the driven roll (100) rotating it, that the sliding ring (30) is fitted into the body (27) of the seal case, which body is located in the end face of toothed gear (16), and that the sliding ring (30) is located in the seal cavity (28) of seal case (27), which cavity is preferably an annular groove and in its side surfaces includes grooves (U1, U2), in which lateral seals (29a1,29a2) are located and which will be situated against the side surfaces of the sliding ring (30).
3. Connecting structure according to claim 1, wherein a free space (D) remains between the sliding ring (30) and the bottom (t) of the seal cavity (28), in which space lubricantgrease may be placed, whereby when the seal case body (27) is rotating lubricant will be moved with the aid of centrifugal force towards the sliding ring (30) and the seals (29a1,29a2) in order to bring about lubrication between the sliding ring (30) and the structures connected with it.
4. Connecting structure according to claim 1, wherein the sliding ring (30) in a peripheral groove (U3) in its end face includes a seal (31), preferably a rubber seal, which is situated against the stop face (24c1), whereby the stop face (24c1) is located in a ring plate (24) of the flange plate (22) connected with the shaft (100), and the ring plate (24) includes a body part (24a) located at right angles against the central axis (X) of the shaft (100) and a body part (24b) in the direction of the central axis (X), whereby the stop face (24c1) is formed in the body part (24b) and it is chosen so that a sufficient travelling distance is made possible for the axial motion (L2) of the roll’s (100) roll jacket (100a).
5. Connecting structure according to claim 1, wherein the sliding ring (30) is an annular part and it is located in the roll (100) around the shaft (100b), whereby with the aid of the free space (D) in the seal cavity (28) the sliding ring (30) of seal (25) is allowed to move in the radial direction (L1) and radial and axial motions (L1 and L2) of the roll’s (100) roll jacket (100a) are allowed.
6. Connecting structure according to claim 1, wherein a leakage oil space (33) after the seal (25) includes a leakage oil channel (34), through which the leakage oil flow can be observed either visually or by using a measuring device, whereby when the leakage oil flow exceeds a certain predetermined limit value, an alarm indicating the said excess can be given to the machine operator.
7. Connecting structure according to claim 1, wherein the sliding ring (30) is of a plastic material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a light emitting diode chip, comprising:
providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof;
forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer totally covering the protrusions;
forming a plurality of semiconductor islands on an upper surface of the un-doped GaN layer by self-organized growth, gaps being formed between two adjacent semiconductor islands to expose a part of the upper surface of the un-doped GaN layer;
forming an n-type GaN layer on the exposed part of the upper surface of the un-doped GaN layer, the n-type GaN layer being laterally grown to totally cover the semiconductor islands;
forming an active layer on an upper surface of the n-type GaN layer; and
forming a p-type GaN layer on the active layer.
2. The method of claim 1, wherein the semiconductor islands formed by self-organized growth are made of SiNx.
3. The method of claim 2, wherein in the self-organized growth of the semiconductor islands, SiH4 gas and NH3 gas are introduced to the surface of the un-doped GaN layer, and the SiH4 gas reacts with the NH3 gas to form the semiconductor islands made of SiNx.
4. The method of claim 1, wherein the semiconductor islands formed by self-organized growth are made of MgNx.
5. The method of claim 4, wherein in the self-organized growth of the semiconductor islands, Cp2Mg gas and NH3 gas are introduced to the surface of the un-doped GaN layer, and the Cp2Mg gas reacts with the NH3 gas to form the semiconductor islands made of MgNx.
6. The method of claim 1, wherein the semiconductor islands each have a height in a range from 50 nm to 300 nm.
7. The method of claim 6, wherein the semiconductor islands each have a height about 100 nm.
8. The method of claim 1, wherein the semiconductor islands each have a width less than 50 nm.
9. The method of claim 8, wherein the semiconductor islands each have a width about 10 nm.
10. The method of claim 1, wherein the active layer is a multiple quantum well (MQW) layer.
11. A method for manufacturing a light emitting diode chip, comprising:
providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof;
forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer totally covering the protrusions;
forming a plurality of semiconductor islands on an upper surface of the un-doped GaN layer by self-organized growth, gaps being formed between two adjacent semiconductor islands to expose a part of the upper surface of the un-doped GaN layer;
forming an n-type GaN layer on the exposed part of the upper surface of the un-doped GaN layer, the n-type GaN layer filled in the gaps between two adjacent semiconductor islands and totally covering the semiconductor islands;
forming an active layer on an upper surface of the n-type GaN layer; and
forming a p-type GaN layer on the active layer.
12. The method of claim 11, wherein the semiconductor islands formed by self-organized growth are made of SiNx.
13. The method of claim 12, wherein in the self-organized growth of the semiconductor islands, SiH4 gas and NH3 gas are introduced to the surface of the un-doped GaN layer, and the SiH4 gas reacts with the NH3 gas to form the semiconductor islands made of SiNx.
14. The method of claim 11, wherein the semiconductor islands formed by self-organized growth are made of MgNx.
15. The method of claim 14, wherein in the self-organized growth of the semiconductor islands, Cp2Mg gas and NH3 gas are introduced to the surface of the un-doped GaN layer, and the Cp2Mg gas reacts with the NH3 gas to form the semiconductor islands made of MgNx.
16. The method of claim 11, wherein the semiconductor islands each have a height in a range from 50 nm to 300 nm.
17. The method of claim 16, wherein the semiconductor islands each have a height about 100 nm.
18. The method of claim 11, wherein the semiconductor islands each have a width less than 50 nm.
19. The method of claim 18, wherein the semiconductor islands each have a width about 10 nm.
20. The method of claim 11, wherein the active layer is a multiple quantum well (MQW) layer.