1. A manufacturing apparatus for processing substrates, comprising:
a process chamber;
a process fluid supply unit including a fluid supply line, and a showerhead disposed at an upper portion of the process chamber and to which the fluid supply line is connected whereby the showerhead injects fluid fed through the fluid supply line into the process chamber; and
a plasma supply unit including a remote plasma reactor disposed outside of the process chamber, and a plasma supply line connected to the remote plasma reactor and to the process chamber, the plasma supply line having an open end disposed at the upper portion of the process chamber such that plasma generated by the remote plasma reactor is injected downward into the process chamber from the upper portion of the process chamber.
2. The manufacturing apparatus according to claim 1, wherein the process fluid supply unit further includes a diffuser disposed in the showerhead to diffuse gas fed through the process fluid supply line throughout the showerhead before the gas is injected by the showerhead into the process chamber.
3. The manufacturing apparatus according to claim 2, wherein the diffuser consists of a plate having passageways extending straight therethrough.
4. The manufacturing apparatus according to claim 3, wherein the process chamber comprises a lid forming the top thereof, and the showerhead of the process supply unit is mounted to the lid of the process chamber.
5. The manufacturing apparatus according to claim 4, wherein the end of the plasma supply line of the plasma supply unit is attached to the lid of the process chamber along with the showerhead.
6. The manufacturing apparatus according to claim 5, wherein the plasma supply line is a waveguide.
7. A manufacturing apparatus for processing substrates, comprising:
a process chamber;
a process fluid supply unit including a process gas supply source having at least one source of gas used in the processing of a substrate within the process chamber, a fluid supply line, and a showerhead disposed at an upper portion of the process chamber and to which the fluid supply line is connected whereby the showerhead injects fluid fed through the fluid supply line from the process gas supply source into the process chamber; and
a plasma supply unit including a remote plasma reactor disposed outside of the process chamber, and a plasma supply line connected to the remote plasma reactor and to the process chamber, the plasma supply line having an open end disposed at the upper portion of the process chamber such that plasma generated by the remote plasma reactor is injected downward into the process chamber from the upper portion of the process chamber.
8. The manufacturing apparatus according to claim 7, wherein the process chamber comprises a lid forming the top thereof, and the showerhead of the process supply unit is mounted to the lid of the process chamber.
9. The manufacturing apparatus according to claim 8, wherein the end of the plasma supply line of the plasma supply unit is attached to the lid of the process chamber along with the showerhead.
10. The manufacturing apparatus according to claim 9, wherein the process fluid supply unit further includes a diffuser disposed in the showerhead to diffuse gas fed through the process fluid supply line throughout the showerhead before the gas is injected by the showerhead into the process chamber.
11. The manufacturing apparatus according to claim 10, wherein the diffuser consists of a plate having passageways extending straight therethrough.
12. The manufacturing apparatus according to claim 11, wherein the plasma supply line is a waveguide.
13. The manufacturing apparatus according to claim 7, further comprising:
an upper electrode disposed in the process chamber;
a lower electrode disposed below the upper electrode in the process chamber; and
RF power supplies connected to the electrodes, respectively.
14. The manufacturing apparatus according to claim 11, wherein the process gas supply source includes a source of TEOS.
15. A substrate processing method comprising:
supporting a substrate in a lower portion of a process chamber;
subsequently injecting a processing medium comprising gas into the process chamber from an upper portion of the process chamber, and processing the substrate using the processing medium;
subsequently cleaning the interior of the process chamber by generating a cleaning plasma outside the process chamber, and injecting the cleaning plasma into the process chamber from the upper portion of the process chamber.
16. The method according to claim 16, wherein the processing of the substrate using the processing medium comprises exciting the process gas within the process chamber to convert the process gas into a plasma within the process chamber.
17. The method according to claim 15, wherein the injecting of the processing medium into the process chamber comprises delivering the processing medium into a showerhead disposed at the upper portion of the process chamber, and the injecting of the cleaning plasma into the process chamber also comprises delivering the cleaning plasma into the showerhead, whereby the cleaning plasma cleans the showerhead in addition to the interior of the process chamber.
18. The method according to claim 17, further comprising diffusing the processing medium in the showerhead by delivering the processing medium onto a diffuser consisting of a plate disposed within the showerhead, the plate having passageways extending straight therethrough, and wherein the cleaning plasma is also delivered to the diffuser, whereby the cleaning plasma cleans the diffuser in addition to the showerhead and the interior of the process chamber.
19. The method according to claim 16, wherein the injecting of the processing medium into the process chamber comprises delivering the processing medium into a showerhead disposed at the upper portion of the process chamber, and the injecting of the cleaning plasma into the process chamber also comprises delivering the cleaning plasma into the showerhead, whereby the cleaning plasma cleans the showerhead in addition to the interior of the process chamber.
20. The method according to claim 15, wherein the injecting of the processing medium into the process chamber comprises delivering TEOS to the showerhead.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor integrated circuit comprising:
a phase-locked loop (PLL) circuit configured to generate an oscillation output signal synchronized with a reference clock, the PLL circuit including:
a phase-frequency detector;
a charge pump;
a loop filter;
an oscillator; and
a voltage-to-current converter configured to convert a control voltage output from the loop filter and to control an oscillation frequency of the oscillator into a current;
a plurality of clock and data recovery (CDR) circuits configured to adjust a phase of the oscillation output signal with respect to a phase of serial data; and
a path for distributing the converted current to the plurality of CDR circuits.
2. The semiconductor integrated circuit according to claim 1, wherein each one of the plurality of CDR circuits includes an oscillator having an oscillation frequency that is controlled on the basis of the distributed current.
3. The semiconductor integrated circuit according to claim 1, wherein each one of the plurality of CDR circuits includes a current-to-voltage converter configured to convert the distributed current into a voltage and a voltage-controlled oscillator having an oscillation frequency that is controlled on the basis of the converted voltage.
4. The semiconductor integrated circuit according to claim 1, wherein the PLL circuit includes a current-controlled oscillator whose oscillation frequency is controlled on the basis of the current converted by the voltage-to-current converter.
5. The semiconductor integrated circuit according to claim 1, wherein the PLL circuit includes a voltage-controlled oscillator having an oscillation frequency that is controlled on the basis of the control voltage output from the loop filter.
6. The semiconductor integrated circuit according to claim 1, wherein the voltage-to-current converter includes a comparator configured to compare the control voltage with a predetermined voltage, and a plurality of constant-current power supplies configured to supply currents to the plurality of CDR circuits on the basis of comparison performed by the comparator.
7. The semiconductor integrated circuit according to claim 2, wherein each one of the plurality of CDR circuits includes a phase control block configured to perform adjustment on the basis of the distributed current such that a phase of a clock generated in the oscillator in the CDR circuit is coincident with a phase of the serial data, and a phase detector configured to compare the phases of the adjusted clock and the serial data and control the phase control block.
8. The semiconductor integrated circuit according to claim 7, further comprising:
a deserializer configured to convert the serial data into parallel data by using the adjusted clock output from the CDR circuit.
9. The semiconductor integrated circuit according to claim 2, wherein each one of the plurality of CDR circuits constitutes a fine loop including a phase detector, a charge pump, a loop filter, a voltage-to-current converter, and the oscillator, and the fine loop is configured to perform an adjustment on the basis of the distributed current and a current converted by the voltage-to-current converter in the fine loop such that a phase of a clock generated in the oscillator is coincident with a phase of the serial data.
10. The semiconductor integrated circuit according to claim 9, further comprising:
a deserializer configured to convert the serial data into parallel data by using the adjusted clock output from the CDR circuit.